NTSV20120CTG [ONSEMI]
Schottky Power Rectifier, Dual, 20 A, 120 V;
| 型号： | NTSV20120CTG |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Power Rectifier, Dual, 20 A, 120 V |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTSV20120CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.557 V at IF = 5 A
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PIN CONNECTIONS
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
1
3
2, 4
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
4
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Typical Applications
1
• Switching Power Supplies including Notebook/Netbook Adapters,
ATX and Flat Panel Display
2
3
TO−220
CASE 221A
STYLE 6
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing Diodes
• Reverse Battery Protection
• Instrumentation
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AY WW
TSV20120Cx
AKA
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
= Assembly Location
= Year
WW
AKA
x
= Work Week
= Polarity Designator
= G or H
G
H
= Pb−Free Package
= Halide−Free Package
ORDERING INFORMATION
Device
NTSV20120CTG
Package
Shipping
50 Units / Rail
TO−220
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. 1
NTSV20120CT/D
NTSV20120CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
120
V
RRM
V
RWM
V
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 115°C)
R
C
Per Device
Per Diode
20
10
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz, T = 110°C)
R
C
Per Device
Per Diode
40
20
Non-repetitive Peak Surge Current
I
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
100
Operating Junction Temperature
T
−40 to +150
−40 to +150
10,000
°C
°C
J
Storage Temperature
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
°C/W
R
R
2.0
70
q
q
JC
JA
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(I = 5 A, T = 25°C)
0.654
0.874
−
1.12
F
J
(I = 10 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.557
0.650
−
0.86
F
J
(I = 10 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
I
R
(V = 90 V, T = 25°C)
5.8
4.9
mA
mA
R
J
(V = 90 V, T = 125°C)
R
J
(Rated dc Voltage, T = 25°C)
16.1
8.9
700
100
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
NTSV20120CT
TYPICAL CHARACTERISTICS
100
10
100
T = 150°C
A
T = 150°C
A
T = 25°C
A
10
1
T = 125°C
A
T = 125°C
A
0.1
1
0.01
T = 25°C
A
0.1
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
20
15
10
10,000
1000
R
= 1.3°C/W
T = 25°C
J
q
JC
dc
Square Wave
100
10
5
0
0.1
1
10
100
0
20
40
60
80
100
120
140
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
40
35
30
25
20
30
25
20
15
10
I /I = 20
PK AV
I
/I = 10
PK AV
R
= 1.3°C/W
q
JC
dc
I
/I = 5
PK AV
Square Wave
Square Wave
dc
15
10
5
0
5
0
T = 150°C
J
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
NTSV20120CT
TYPICAL CHARACTERISTICS
10
1
50%
20%
10%
5%
P
(pk)
0.1
t
1
2%
t
2
DUTY CYCLE, D = t /t
1 2
1%
Single Pulse
0.0001
0.01
0.000001 0.00001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 7. Typical Transient Thermal Response
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4
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