NTPF450N80S3Z [ONSEMI]
MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 11 A, 450 mΩ, TO-220F;
| 型号： | NTPF450N80S3Z |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 11 A, 450 mΩ, TO-220F |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power,
N-Channel, SUPERFET) III
800 V, 450 mW, 11 A
NTPF450N80S3Z
Description
800 V SUPERFET III MOSFET is ON Semiconductor’s high
performance MOSFET family offering 800 V breakdown voltage.
New 800 V SUPERFET III MOSFET which is optimized for
primary switch of flyback converter, enables lower switching losses
and case temperature without sacrificing EMI performance thanks to
its optimized design. In addition, internal Zener Diode significantly
improves ESD capability.
www.onsemi.com
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
800 V
450 mW @ V = 10 V
11 A
GS
This new family of 800 V SUPERFET III MOSFET enables to
make more efficient, compact, cooler and more robust applications
because of its remarkable performance in switching power
applications such as Laptop adapter, Audio, Lighting, ATX power and
industrial power supplies.
N−CHANNEL MOSFET
D
Features
G
• Typ. R
= 380 mW
DS(on)
• Ultra Low Gate Charge (Typ. Qg = 19.3 nC)
• Low Stored Energy in Output Capacitance (Eoss = 2.2 mJ @ 400 V)
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant
S
Applications
G
D
S
• Adapters / Chargers
• LED Lighting
• AUX Power
• Audio
TO−220
CASE 221D
MARKING DIAGRAM
• Industrial Power
&Z&3&K
NTPF450
N80S3Z
&Z
= Assembly Plant Code
&3
&K
= Data Code (Year & Week)
= Lot
NTPF450N80S3Z = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August, 2020 − Rev. 0
NTPF450N80S3Z/D
NTPF450N80S3Z
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
V
Parameter
Value
800
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
DSS
V
GS
DC
20
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
11*
A
C
Continuous (T = 100°C)
7*
A
C
I
Drain Current
Pulsed (Note 1)
25*
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
32
mJ
A
AS
I
AS
1.55
0.295
100
E
AR
mJ
V/ns
V/ns
W
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
10
P
T
= 25°C
29.5
0.236
−55 to +150
260
D
C
Derate above 25°C
W/°C
°C
°C
T , T
J
Operating Junction and Storage Temperature Range
stg
T
Lead Temperature for Soldering Purposes
(1/8″ from Case for 10 seconds)
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 1.55 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 2.75 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
4.23
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
°C/W
R
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NTPF450N80S3Z
NTPF450N80S3Z
TO−220F
Tube
N/A
50 Units
www.onsemi.com
2
NTPF450N80S3Z
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
800
900
−
−
−
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
DBV
/DT
Drain−to−Source Breakdown Voltage
Temperature Coefficient
I
= 1 mA, Reference to 25°C
1.1
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 800 V, V = 0 V
−
−
−
−
0.8
−
1
−
1
mA
DSS
GS
= 640 V, T = 125°C
C
I
Gate−to−Source Leakage Current
= 20 V, V = 0 V
DS
mA
GSS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.24 mA
2.2
−
−
3.8
450
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain−to−Source On Resistance
Forward Transconductance
= 10 V, I = 5.5 A
380
11.8
D
g
FS
= 20 V, I = 5.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V,
−
−
−
−
−
−
−
−
885
15
−
−
−
−
−
−
−
−
pF
iss
D
GS
f = 250 kHz
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
V
DS
= 0 V to 400 V, V = 0 V
188
27
oss(eff.)
GS
C
oss(er.)
Q
V
DS
= 400 V, I = 5.5 A, V = 10 V
19.3
4.2
6.6
4.0
nC
g(tot)
D
GS
(Note 4)
Q
gs
Q
gd
ESR
f = 1 MHz
W
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 5.5 A,
−
−
−
−
13.3
6.7
−
−
−
−
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
G
t
r
(Note 4)
t
44.3
4.6
d(off)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source−to−Drain Diode Forward Current
Maximum Pulsed Source−to−Drain Diode Forward Current
−
−
−
−
−
−
11
25
A
A
V
S
I
SM
V
SD
Source−to−Drain Diode Forward Volt-
V
GS
= 0 V, I = 5.5 A
1.2
SD
age
t
Reverse Recovery Time
V
= 0 V, I = 2.75 A, di /
−
−
170
1.5
−
−
ns
rr
GS
SD
F
dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
3
NTPF450N80S3Z
TYPICAL CHARACTERISTICS
30
25
20
15
10
100
V
DS
= 20 V
T = 25°C
J
V
GS
= 20 V
7.0 V
10 V
5.5 V
10
5.0 V
T = 25°C
J
4.5 V
5
0
T = 150°C
T = −55°C
J
J
1
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.50
1.25
1.00
0.75
0.50
V
= 0 V
GS
10
1
V
GS
= 10 V
0.1
V
GS
= 20 V
0.01
0.25
0
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.001
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 3. On Resistance vs. Drain Current
Figure 4. Diode Forward Voltage vs. Current
100K
10K
1K
10
8
V
DD
= 130 V
I
D
= 5.5 A
C
iss
V
DD
= 400 V
6
4
100
10
C
oss
f = 250 kHz
V
= 0 V
= C
GS
C
C
C
C
rss
oss
iss
gd
rss
2
0
1
= C + C
= C + C (C = shorted)
ds
gd
gs
gd
ds
0.1
0.1
1
10
100
1000
5
10
15
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTPF450N80S3Z
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
I
D
= 10 mA
I
V
= 5.5 A
D
= 10 V
2.5
2.0
1.5
1.0
GS
0.9
0.8
0.5
0
−75 −50 −25
0
25
50 75 100 125 150 175
−75 −50 −25
0
25
50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Normalized BVDSS vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
6
5
100
10
100 ms
1 ms
10 ms
10 ms
1s
4
3
2
DC
1
R
Limit
DS(on)
0.1
1
0
Single Pulse
= 25°C
T
C
0.01
1
10
100
1000
0
100
200 300 400
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
500
600 700 800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
Figure 9. Safe Operating Area
Figure 10. Eoss vs. Drain−to−Source Voltage
2
1
50% Duty Cycle
20%
10%
5%
0.1
P
DM
2%
t
1
t
2
1%
0.01
Z
q
(t) = r(t) x R
q
JC
JC
R
= 4.23°C/W
q
JC
Single Pulse
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , RECTANGULAR PULSE DURATION (sec)
1
Figure 11. Transient Thermal Impedance
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5
NTPF450N80S3Z
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTPF450N80S3Z
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
NTPF450N80S3Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
M
M
0.25 (0.010)
B
Y
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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