NTP5D0N15MC [ONSEMI]
MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A;
| 型号： | NTP5D0N15MC |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A 栅 |
| 文件： | 总7页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 5.0 mW, 139 A
NTP5D0N15MC
Features
www.onsemi.com
• Shielded Gate MOSFET Technology
• Max R
= 5.0 mW at V = 10 V, I = 97 A
GS D
DS(on)
• 50% Lower Qrr than other MOSFET Suppliers
• Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
5.0 mW @ 10 V
139 A
• 100% UIL Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D
Typical Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
N−CHANNEL MOSFET
V
DSS
Gate−to−Source Voltage
V
GS
V
MARKING
DIAGRAM
Continuous Drain
Current R
I
D
139
A
4
q
JC
4
Steady
State
(Note 2)
T
= 25°C
C
Drain
Power Dissipation
P
D
214
15
W
A
R
(Note 2)
q
JC
Continuous Drain
Current R
I
D
q
JA
AYWWZZ
NTP
5D0N15MC
Steady
State
(Notes 1, 2)
T = 25°C
A
TO−220
CASE 221A
Power Dissipation
P
D
2.4
W
1
R
(Notes 1, 2)
q
JA
2
1
Gate
3
3
Pulsed Drain Current
T = 25°C, t = 100 ms
A
I
DM
818
A
Source
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
2
Drain
Single Pulse Drain−to−Source Avalanche
E
1014
260
mJ
AS
NTP5D0N15MC = Specific Device Code
Energy (I = 26 A , L = 3 mH)
L
pk
A
Y
= Assembly Location
= Year
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
WW
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
ORDERING INFORMATION
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
†
Device
NTP5D0N15MC
Package
Shipping
TO−220
800 / Tube
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2020 − Rev. 1
NTP5D0N15MC/D
NTP5D0N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.7
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
76
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1.0
DSS
GSS
GS
J
mA
V
= 120 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
= V , I = 532 mA
2.5
4.5
5
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
I = 532 mA, ref to 25°C
D
−8.5
4.2
GS(TH)
J
R
V
= 10 V, I = 97 A
D
DS(on)
GS
DS
g
FS
V
= 10 V, I = 97 A
146
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6300
1900
13
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 75 V
pF
DS
Reverse Transfer Capacitance
Gate−Resistance
R
1.1
75
2.2
W
G
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
18
G(TH)
nC
Q
31
V
GS
= 10 V, V = 75 V; I = 97 A
GS
GD
GP
DS
D
Q
V
10
5.4
227
V
Output Charge
Q
V
DD
= 75 V, V = 0 V
nC
OSS
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
32
14
45
9.0
d(ON)
t
r
V
= 10 V, V = 75 V,
DD
GS
D
ns
V
I
= 97 A, R = 4.7 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
= 0 V,
= 97 A
T = 25°C
J
0.96
1.2
GS
I
S
Reverse Recovery Time
t
92
ns
RR
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 100 A/ms, I = 97 A
S
Reverse Recovery Charge
Q
189
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTP5D0N15MC
TYPICAL CHARACTERISTICS
6
300
225
150
10 V
V
= 5 V
7.0 V
8.0 V
6 V
GS
6.0 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
3
8 V
7 V
V
= 5.0 V
GS
75
0
10 V
0
0
1
2
3
4
5
6
7
8
9
10
0
4
0
60
120
180
240
300
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
40
32
24
16
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 97 A
I
V
= 97 A
D
= 10 V
GS
T = 125°C
J
8
0
T = 25°C
J
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
240
180
120
300
100
V
DS
= 10 V
V
GS
= 0 V
10
1
T = 25°C
J
0.1
60
0
T = 150°C
J
0.01
T = 150°C
J
T = −55°C
J
T = 25°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
NTP5D0N15MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 25 V
I
D
= 97 A
C
ISS
1K
V
DD
= 50 V
C
V
DD
= 75 V
OSS
6
100
4
10
1
2
0
f = 1 MHz
= 0 V
C
RSS
V
GS
0
16
32
48
64
80
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
150
100
1M
100K
10K
1K
V
= 10 V
GS
V
GS
= 8 V
50
0
100
10
R
= 0.7°C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1000
10 ms
100
10
T = 25°C
J
100 ms
T = 100°C
J
T = 150°C
J
10
1 ms
T
= 25°C
C
Single Pulse
R
10 ms
= 0.7°C/W
q
JC
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.1
0.001 0.01
0.1
1
10
100
1000
0.1
1
10
t , TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
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4
NTP5D0N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
P
0.02
DM
Notes:
= 0.7°C/W
0.01
R
q
JC
0.01
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
Single Pulse
0.00001
2
1
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
STYLE 3:
PIN 1. CATHODE
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. ANODE
3. GATE
2. MAIN TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN TERMINAL 2
STYLE 5:
PIN 1. GATE
STYLE 6:
PIN 1. ANODE
STYLE 7:
STYLE 8:
PIN 1. CATHODE
2. ANODE
PIN 1. CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1. GATE
STYLE 10:
PIN 1. GATE
STYLE 11:
STYLE 12:
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT CONNECTED
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DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
PAGE 1 OF 1
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