NTP125N60S5FZ [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 650 V, 22 A, 125 mΩ, TO-220;
| 型号： | NTP125N60S5FZ |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 650 V, 22 A, 125 mΩ, TO-220 |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FRFET), TO220
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
125 mW @ 10 V
22 A
D
600 V, 125 mW, 22 A
NTP125N60S5FZ
Description
G
The SUPERFET V MOSFET FRFET series, optimized reverse
recovery performance of body diode, can remove additional
component and improve system reliability for soft switching
applications such as PSFB and LLC.
S
Features
• 650 V @ T = 150°C
J
• Typ. R
= 100 mW
• 100% Avalanche Tested
DS(on)
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
G
Applications
D
S
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
TO−220−3LD
CASE 340AT
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
600
20
Unit
V
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
20
T125N
60S5FZ
AYWWZZ
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
22
A
C
D
T
C
13
Power Dissipation
T
C
T
C
T
C
P
156
81
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
81
A
SM
Operating Junction and Storage Temperature T , T
−55 to
°C
J
STG
Range
+150
T125N60S5FZ = Specific Device Code
= Assembly Plant Code
YWW = Date Code (Year & Week)
A
Source Current (Body Diode)
I
S
22
A
ZZ
= Lot
Single Pulse Avalanche
Energy
I = 4.5 A,
G
E
AS
184
mJ
L
R
= 25 W
Avalanche Current
I
4.5
1.56
120
70
A
AS
ORDERING INFORMATION
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
Device
Package
Shipping
dv/dt
V/ns
NTP125N60S5FZ
TO220
50 Units / Tube
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 11 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 1
NTP125N60S5FZ/D
NTP125N60S5FZ
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.8
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
GS DS
−
−
−
−
10
2
mA
mA
DSS
GSS
DS
J
I
V
= 20 V, V = 0 V
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 11 A, T = 25_C
−
3.2
−
100
−
125
4.8
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 2.2 mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 11 A
23
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2213
34
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
520
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
56
39
12
11
8
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 11 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 400 V,
−
−
−
−
31
14
86
7
−
−
−
−
ns
d(on)
DD
= 11 A, R = 7.5 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 11 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 11 A,
89
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
440
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTP125N60S5FZ
TYPICAL CHARACTERISTICS
40
30
20
100
10 V
V
GS
= 7.0 V
T = 25°C
C
V
DS
= 20 V
6.0 V
10
T = 25°C
J
10
0
5.0 V
4.5 V
T = 150°C
T = −55°C
J
J
1
0
0
0
5
10
15
20
3
0
0
4
5
6
7
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.25
0.20
100
10
V
GS
= 0 V
T
= 25°C
C
0.15
0.10
V
V
= 10 V
= 20 V
GS
T
C
= 25°C
GS
1
0.05
0
T
C
= 150°C
T = −55°C
C
0.1
10
20
I , DRAIN CURRENT (A)
30
40
0.2
0.4
, DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
10
10
8
V
= 0 V
GS
C
C
C
= C + C (C = shorted)
iss gs gd ds
I
D
= 11 A
f = 250 KHz
5
= C + C
= C
10
oss
rss
ds
gd
V
DS
= 130 V
gd
4
10
V
= 400 V
DS
6
C
C
3
ISS
10
2
10
4
OSS
RSS
1
10
C
2
0
0
10
−1
10
100
200
300
400
500
600
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTP125N60S5FZ
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
= 10 V
GS
= 11 A
GS
I
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
1000
100
10
25
20
15
10
Operation in this
Area is Limited
by R
DS(ON)
10 ms
100 ms
1 ms
10 ms
1
T
= 25°C
C
5
0
T = 150°C
J
Single Pulse
DC
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
8
6
4
2
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NTP125N60S5FZ
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Z
(t) = 0.8°C/W Max
q
JC
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.00001
T
= P
x Z (t) + T
q
DM JC C
JM
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impadance
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5
NTP125N60S5FZ
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTP125N60S5FZ
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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7
NTP125N60S5FZ
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
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8
NTP125N60S5FZ
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