NTNUS3171PZT5G [ONSEMI]
单 P 沟道小信号 MOSFET -20V，-200mA，3.5Ω;
| 型号： | NTNUS3171PZT5G |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道小信号 MOSFET -20V，-200mA，3.5Ω 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTNUS3171PZ
MOSFET – Single
P-Channel, Small Signal,
SOT-1123, 1.0 x 0.6 mm
-20 V, -200 mA
http://onsemi.com
Features
• Single P−Channel MOSFET
V
R
MAX
I Max
D
(BR)DSS
DS(ON)
• Offers a Low R
Solution in the Ultra Small 1.0 x 0.6 mm
3.5 W @ −4.5 V
4.0 W @ −2.5 V
5.5 W @ −1.8 V
7.0 W @ −1.5 V
DS(on)
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
−20 V
−0.20 A
MARKING
DIAGRAM
3
Applications
2
• High Side Switch
1
5 M
• High Speed Interfacing
SOT−1123
CASE 524AA
• Optimized for Power Management in Ultra Portable Equipment
5
= Specific Device Code
(Rotated 90° Clockwise)
= Date Code
MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
M
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
DSS
−20
8
V
V
P−Channel
Gate−to−Source Voltage
V
GS
MOSFET
Continuous Drain
Current (Note 1)
T = 25°C
−150
−110
−200
−125
A
Steady
State
D
3
T = 85°C
A
I
mA
D
t v 5 s
Steady
State
T = 25°C
A
Power Dissipation
(Note 1)
G
1
T = 25°C
A
P
mW
D
t v 5 s
−200
−600
Pulsed Drain Current
t = 10 ms
p
I
mA
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
S
2
J
T
Source Current (Body Diode) (Note 2)
I
S
−200
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
ORDERING INFORMATION
T
L
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTNUS3171PZT5G SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2
or 2 mm , 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2019 − Rev. 1
NTNUS3171PZ/D
NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Symbol
Max
1000
600
Unit
R
°C/W
q
JA
R
q
JA
2
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = −250 mA
−20
V
(BR)DSS
GS
D
I
V
V
= 0 V, V = −5.0 V
T = 25°C
J
−50
−100
−200
100
DSS
GS
DS
= 0 V, V = −5.0 V
T = 85°C
J
nA
nA
V
GS
DS
V
= 0 V, V = −16 V
T = 25°C
J
GS
DS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
= 5.0 V
GSS
DS
GS
V
R
V
= V , I = −250 mA
−0.4
−0.7
2.0
−1.0
3.5
4.0
5.5
7.0
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
V
= −4.5 V, I = −100 mA
DS(ON)
GS D
V
= −2.5 V, I = −50 mA
2.6
GS
GS
GS
GS
DS
D
V
V
= −1.8 V, I = −20 mA
3.4
W
D
= −1.5 V, I = −10 mA
4.0
D
V
= −1.2 V, I = −1.0 mA
6.0
D
Forward Transconductance
g
FS
V
= −5.0 V, I = −125 mA
0.26
S
V
D
Source−Drain Diode Voltage
V
SD
V
= 0 V, I = −200 mA
−0.5
−1.4
GS
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
13
3.4
1.6
ISS
f = 1 MHz, V = 0 V
GS
Output Capacitance
C
OSS
C
RSS
pF
ns
V
= −15 V
DS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
30
56
d(ON)
t
r
V
= −4.5 V, V = −15 V,
DD
GS
D
I
= −200 mA, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
196
145
d(OFF)
t
f
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
NTNUS3171PZ
TYPICAL CHARACTERISTICS
0.36
0.32
0.36
4.5 V
T = 25°C
V
≥ 5 V
2.0 V
J
DS
0.32
0.28
0.24
0.20
0.16
0.12
0.08
1.8 V
1.6 V
1.4 V
V
= 2.2 thru 2.5 V
GS
0.28
0.24
0.20
0.16
0.12
0.08
1.2 V
1.0 V
T = 125°C
J
0.04
0
0.04
0
T = 25°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
9.0
8.0
7.0
6.0
5.0
3.5
3
T = 25°C
J
T = 25°C
J
I
= 200 mA
D
V
= 2.5 V
= 4.5 V
GS
2.5
4.0
3.0
2.0
1.0
V
GS
2
I
D
= 20 mA
2
1.5
0.10
1
3
4
5
0.15
0.20
0.25
0.30
0.35
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.75
1.50
1.25
1.00
10,000
1000
V
GS
= 0 V
I
V
= 200 mA
D
= 4.5 V
GS
T = 150°C
J
100
10
T = 125°C
J
0.75
0.50
−50 −25
0
25
50
75
100
125 150
0
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
http://onsemi.com
3
NTNUS3171PZ
TYPICAL CHARACTERISTICS
18
16
14
12
10
1000
T = 25°C
J
V
GS
= 0 V
t
t
d(off)
C
f
iss
100
t
r
t
d(on)
8
6
4
C
oss
10
1
V
= 15 V
= 200 mA
= 4.5 V
DD
I
D
2
0
V
GS
C
rss
0
2
4
6
8
10
12 14 16
18 20
1
10
R , GATE RESISTANCE (W)
100
DRAIN−TO−SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
V
= 0 V
0.12
0.10
GS
T = 25°C
J
0.08
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
http://onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
DATE 29 NOV 2011
SCALE 8:1
NOTES:
−X−
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
c
E
H
E
SIDE VIEW
L
0.185 REF
L2 0.05 0.15
b
3X
L2
GENERIC
MARKING DIAGRAM*
0.08 X
Y
e
X M
3X
L
2X
b1
X
M
= Specific Device Code
= Date Code
BOTTOM VIEW
*This information is generic. Please refer
to device data sheet for actual part
marking.
SOLDERING FOOTPRINT*
1.20
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3X 0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1. BASE
PIN 1. ANODE
2. N/C
PIN 1. ANODE
2. ANODE
PIN 1. CATHODE
2. CATHODE
3. ANODE
PIN 1. GATE
2. EMITTER
3. COLLECTOR
2. SOURCE
3. DRAIN
3. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23134D
SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P
PAGE 1 OF 1
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