NTMS4503NR2G [ONSEMI]

功率 MOSFET，28V，14A，7mΩ，单 N 沟道，SO-8;


型号：	NTMS4503NR2G
厂家：	ONSEMI
描述：	功率 MOSFET，28V，14A，7mΩ，单 N 沟道，SO-8 开关光电二极管晶体管
文件：	总7页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NTMS4503N

Power MOSFET

28 V, 14 A, N−Channel, SOIC−8

Features

• Low R

DS(on)

http://onsemi.com

• High Power and Current Handling Capability

• Low Gate Charge

Max

• Pb−Free Package is Available

DS(on)

Typ

(BR)DSS

(Note 1)

Applications

7.0 mW @ 10 V

8.8 mW @ 4.5 V

28 V

14 A

• DC/DC Converters

• Motor Drives

• Synchronous Rectifier − POL

• Buck Low−Side

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage − Continuous

Drain Current

$20

Continuous @ T = 25°C (Note 1)

9.0

MARKING DIAGRAM &

PIN ASSIGNMENT

Continuous @ T = 25°C (Note 2)

Continuous @ T = 25°C (Note 3)

Single Pulse (tp = 10 ms)

Total Power Dissipation

T = 25°C (Note 1)

T = 25°C (Note 3)

2.5

1.66

0.93

4503N

AYWW G

T = 25°C (Note 2)

SOIC−8

CASE 751

STYLE 12

Operating and Storage Temperature

T , T

−55 to

150

°C

stg

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

4503N = Specific Device Code

(V = 30 V, V = 10 V, I = 12.2 A,

= Assembly Location

= Year

L = 1.0 mH, R = 25 W)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

= Work Week

= Pb−Free Package

THERMAL RESISTANCE RATINGS

Rating

(Note: Microdot may be in either location)

Symbol Value Unit

ORDERING INFORMATION

Thermal Resistance

°C/W

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Junction−to−Ambient (Note 3)

135

Device

NTMS4503NR2

Package

Shipping†

SOIC−8

2500/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using minimum recommended pad size

(Cu area 0.412 in sq), t < 10 s.

NTMS4503NR2G SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2. Surface−mounted on FR4 board using 1″ pad size

(Cu area 1.127 in sq) steady state.

3. Surface−mounted on FR4 board using minimum recommended pad size

(Cu area 0.412 in sq), steady state.

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

March, 2007 − Rev. 2

NTMS4503N/D

NTMS4503N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

−

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

−

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

T = 25°C

−

1.0

DSS

= 0 V, V = 24 V

T = 100°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

= 0 V, V = $20 V

$100

GSS

= V , I = 250 mA

1.0

−

2.0

−

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

−

−5.0

7.0

8.8

mV/°C

GS(TH)

DS(on)

= 10 V, I = 14 A

−

8.0

9.8

−

= 4.5 V, I = 10 A

−

Forward Transconductance

= 10 V, I = 14 A

−

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

−

2400

1000

375

−

ISS

Output Capacitance

OSS

RSS

= 0 V, f = 1.0 MHz, V = 16 V

Reverse Transfer Capacitance

Total Gate Charge

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

2.0

G(TH)

= 4.5 V, V = 16 V, I = 10 A

DS D

5.0

SWITCHING CHARACTERISTICS, V = V (Note 5)

Turn−On Delay Time

Rise Time

−

18.5

−

d(ON)

= 4.5 V, V = 16 V, I = 10 A,

= 2.0 W

Turn−Off Delay Time

Fall Time

d(OFF)

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

−

0.82

0.65

1.2

−

= 0 V, I = 10 A

T = 125°C

Reverse Recovery Time

Charge Time

−

= 0 V,

−

ISD

/d = 100 A/ms,

Discharge Time

−

= 14 A

Reverse Recovery Charge

−

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NTMS4503N

TYPICAL PERFORMANCE CURVES

= 10, 3.6, 3.2 V

T = 25°C

≥ 10 V

3 V

2.8 V

2.6 V

T = 25°C

2.4 V

2.2 V

T = −55°C

T = 100°C

1.5

2.5

3.5

, GATE−TO−SOURCE VOLTAGE (VOLTS)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.012

0.011

0.010

0.009

0.008

T = 25°C

= 14 A

0.011

0.010

0.009

0.008

0.007

0.006

T = 25°C

= 4.5 V

= 10 V

0.007

0.006

0.005

0.004

, GATE−TO−SOURCE VOLTAGE (VOLTS)

DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.6

10000

= 0 V

= 14 A

T = 150°C

= 4.5 V

1.4

1.2

1000

100

T = 100°C

0.8

0.6

−50 −25

100 125

150

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

T , JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTMS4503N

TYPICAL PERFORMANCE CURVES

4200

3600

3000

2400

1800

1200

T = 25°C

iss

rss

iss

oss

600

= 10 A

T = 25°C

= 0 V

rss

Q , TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To−Source Voltage vs. Total Charge

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

= 16 V

= 10 A

= 4.5 V

= 0 V

T = 25°C

d(off)

d(on)

100

0.4

100

0.5

0.6

0.7

0.8

0.9

1.0

R , GATE RESISTANCE (OHMS)

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AK

DATE 16 FEB 2011

SCALE 1:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

−X−

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDARD IS 751−07.

0.25 (0.010)

−Y−

MILLIMETERS

DIM MIN MAX

INCHES

MIN

MAX

0.197

0.157

0.069

0.020

4.80

3.80

1.35

0.33

5.00 0.189

4.00 0.150

1.75 0.053

0.51 0.013

N X 45

SEATING

PLANE

1.27 BSC

0.050 BSC

−Z−

0.10

0.19

0.40

0.25 0.004

0.25 0.007

1.27 0.016

0.010

0.050

0.020

0.244

0.10 (0.004)

0.25

5.80

0.50 0.010

6.20 0.228

0.25 (0.010)

GENERIC

MARKING DIAGRAM*

SOLDERING FOOTPRINT*

XXXXX

ALYWX

XXXXXX

AYWW

XXXXX

ALYWX

XXXXXX

AYWW

1.52

0.060

Discrete

(Pb−Free)

7.0

0.275

4.0

0.155

XXXXX = Specific Device Code

XXXXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Assembly Location

= Year

= Work Week

= Pb−Free Package

= Work Week

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

0.6

0.024

1.270

0.050

inches

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42564B

SOIC−8 NB

PAGE 1 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

SOIC−8 NB

CASE 751−07

ISSUE AK

DATE 16 FEB 2011

STYLE 1:

STYLE 2:

STYLE 3:

STYLE 4:

PIN 1. EMITTER

2. COLLECTOR

3. COLLECTOR

4. EMITTER

5. EMITTER

6. BASE

PIN 1. COLLECTOR, DIE, #1

2. COLLECTOR, #1

3. COLLECTOR, #2

4. COLLECTOR, #2

5. BASE, #2

PIN 1. DRAIN, DIE #1

2. DRAIN, #1

3. DRAIN, #2

4. DRAIN, #2

5. GATE, #2

PIN 1. ANODE

2. ANODE

3. ANODE

4. ANODE

5. ANODE

6. ANODE

7. ANODE

6. EMITTER, #2

7. BASE, #1

6. SOURCE, #2

7. GATE, #1

7. BASE

8. EMITTER

8. EMITTER, #1

8. SOURCE, #1

8. COMMON CATHODE

STYLE 5:

STYLE 6:

PIN 1. SOURCE

2. DRAIN

STYLE 7:

STYLE 8:

PIN 1. COLLECTOR, DIE #1

2. BASE, #1

PIN 1. DRAIN

2. DRAIN

3. DRAIN

4. DRAIN

5. GATE

PIN 1. INPUT

2. EXTERNAL BYPASS

3. THIRD STAGE SOURCE

4. GROUND

5. DRAIN

6. GATE 3

7. SECOND STAGE Vd

8. FIRST STAGE Vd

3. DRAIN

3. BASE, #2

4. SOURCE

5. SOURCE

6. GATE

7. GATE

8. SOURCE

4. COLLECTOR, #2

5. COLLECTOR, #2

6. EMITTER, #2

7. EMITTER, #1

8. COLLECTOR, #1

6. GATE

7. SOURCE

8. SOURCE

STYLE 9:

STYLE 10:

PIN 1. GROUND

2. BIAS 1

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

STYLE 12:

PIN 1. EMITTER, COMMON

2. COLLECTOR, DIE #1

3. COLLECTOR, DIE #2

4. EMITTER, COMMON

5. EMITTER, COMMON

6. BASE, DIE #2

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

3. OUTPUT

4. GROUND

5. GROUND

6. BIAS 2

7. INPUT

8. GROUND

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

7. BASE, DIE #1

8. EMITTER, COMMON

STYLE 13:

PIN 1. N.C.

2. SOURCE

3. SOURCE

4. GATE

STYLE 14:

PIN 1. N−SOURCE

2. N−GATE

STYLE 15:

PIN 1. ANODE 1

2. ANODE 1

STYLE 16:

PIN 1. EMITTER, DIE #1

2. BASE, DIE #1

3. P−SOURCE

4. P−GATE

5. P−DRAIN

6. P−DRAIN

7. N−DRAIN

8. N−DRAIN

3. ANODE 1

4. ANODE 1

5. CATHODE, COMMON

6. CATHODE, COMMON

7. CATHODE, COMMON

8. CATHODE, COMMON

3. EMITTER, DIE #2

4. BASE, DIE #2

5. COLLECTOR, DIE #2

6. COLLECTOR, DIE #2

7. COLLECTOR, DIE #1

8. COLLECTOR, DIE #1

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

STYLE 17:

PIN 1. VCC

2. V2OUT

3. V1OUT

4. TXE

STYLE 18:

STYLE 19:

PIN 1. SOURCE 1

2. GATE 1

STYLE 20:

PIN 1. ANODE

2. ANODE

3. SOURCE

4. GATE

PIN 1. SOURCE (N)

2. GATE (N)

3. SOURCE (P)

4. GATE (P)

5. DRAIN

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. MIRROR 2

7. DRAIN 1

8. MIRROR 1

5. RXE

6. VEE

7. GND

8. ACC

5. DRAIN

6. DRAIN

7. CATHODE

8. CATHODE

6. DRAIN

7. DRAIN

8. DRAIN

STYLE 21:

STYLE 22:

STYLE 23:

STYLE 24:

PIN 1. CATHODE 1

2. CATHODE 2

3. CATHODE 3

4. CATHODE 4

5. CATHODE 5

6. COMMON ANODE

7. COMMON ANODE

8. CATHODE 6

PIN 1. I/O LINE 1

PIN 1. LINE 1 IN

PIN 1. BASE

2. COMMON CATHODE/VCC

3. COMMON CATHODE/VCC

4. I/O LINE 3

5. COMMON ANODE/GND

6. I/O LINE 4

7. I/O LINE 5

8. COMMON ANODE/GND

2. COMMON ANODE/GND

3. COMMON ANODE/GND

4. LINE 2 IN

2. EMITTER

3. COLLECTOR/ANODE

4. COLLECTOR/ANODE

5. CATHODE

6. CATHODE

7. COLLECTOR/ANODE

8. COLLECTOR/ANODE

5. LINE 2 OUT

6. COMMON ANODE/GND

7. COMMON ANODE/GND

8. LINE 1 OUT

STYLE 25:

PIN 1. VIN

2. N/C

STYLE 26:

PIN 1. GND

2. dv/dt

STYLE 27:

PIN 1. ILIMIT

2. OVLO

STYLE 28:

PIN 1. SW_TO_GND

2. DASIC_OFF

3. DASIC_SW_DET

4. GND

3. REXT

4. GND

5. IOUT

6. IOUT

7. IOUT

8. IOUT

3. ENABLE

4. ILIMIT

5. SOURCE

6. SOURCE

7. SOURCE

8. VCC

3. UVLO

4. INPUT+

5. SOURCE

6. SOURCE

7. SOURCE

8. DRAIN

5. V_MON

6. VBULK

7. VBULK

8. VIN

STYLE 30:

PIN 1. DRAIN 1

2. DRAIN 1

STYLE 29:

PIN 1. BASE, DIE #1

2. EMITTER, #1

3. BASE, #2

3. GATE 2

4. SOURCE 2

5. SOURCE 1/DRAIN 2

6. SOURCE 1/DRAIN 2

7. SOURCE 1/DRAIN 2

8. GATE 1

4. EMITTER, #2

5. COLLECTOR, #2

6. COLLECTOR, #2

7. COLLECTOR, #1

8. COLLECTOR, #1

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42564B

SOIC−8 NB

PAGE 2 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

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ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

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

NTMS4503NR2G [ONSEMI]

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