NTMFS6H800NLT1G [ONSEMI]
单 N 沟道功率 MOSFET 80V，224A，1.8mΩ;
| 型号： | NTMFS6H800NLT1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道功率 MOSFET 80V，224A，1.8mΩ |
| 文件： | 总7页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
N-Channel
80 V, 1.9 mW, 224 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.9 mW @ 10 V
2.4 mW @ 4.5 V
80 V
224 A
NTMFS6H800NL
D (5,6)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (4)
G
• These Devices are Pb−Free and are RoHS Compliant
S (1,2,3)
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
224
158
214
107
30
A
C
DFN5 (SO−8FL)
CASE 506EZ
S
S
S
G
D
D
q
JC
6H800L
AYWZZ
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
D
W
A
1
R
(Note 1)
q
JC
D
T
C
= 100°C
6H800L = Specific Device Code
Continuous Drain
Current R
T = 25°C
A
I
D
A
Y
W
ZZ
= Assembly Location
= Year
q
JA
T = 100°C
A
21
(Notes 1, 2, 3)
Steady
State
= Work Week
= Lot Traceability
Power Dissipation
T = 25°C
A
P
D
3.9
1.9
900
W
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
J
stg
+175
Source Current (Body Diode)
I
S
179
601
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 16.2 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.7
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
July, 2022 − Rev. 4
NTMFS6H800NL/D
NTMFS6H800NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
36
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 330 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.1
1.5
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
1.9
2.4
DS(on)
GS
D
mW
V
GS
= 4.5 V
1.9
D
Forward Transconductance
g
FS
V
DS
=8 V, I = 50 A
250
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6900
800
22
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 40 V
pF
nC
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 40 V; I = 50 A
112
10
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
19
GS
GD
GP
Q
V
17
V
GS
= 4.5 V, V = 40 V; I = 50 A
DS
D
3.0
53
V
Total Gate Charge
Q
nC
G(TOT)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
20
d(ON)
Rise Time
t
153
118
163
r
V
= 4.5 V, V = 64 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
77
1.2
SD
RR
J
V
S
= 0 V,
= 50 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
40
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
38
Reverse Recovery Charge
Q
110
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6H800NL
TYPICAL CHARACTERISTICS
220
200
180
160
140
120
100
80
2.8 V
220
V
DS
= 10 V
200
180
160
140
120
100
80
2.6 V
3.0 V to 10 V
V
GS
= 2.4 V
T = 25°C
J
60
60
40
40
20
0
20
T = 125°C
J
T = −55°C
J
0
0
1
2
3
4
5
6
7
8
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
6
5
4
3
2
T = 25°C
J
T = 25°C
D
J
2.5
2.0
1.5
I
= 50 A
V
= 4.5 V
= 10 V
GS
V
GS
1.0
1
0
0.5
0
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000
100
10
2.5
2.0
T = 175°C
J
V
= 10 V
= 50 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.5
1.0
0.5
1
T = 25°C
J
0.1
0.01
5
15
V
25
35
45
55
65
75
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS6H800NL
TYPICAL CHARACTERISTICS
10
10K
C
9
8
7
6
5
4
3
2
ISS
1K
100
10
C
OSS
Q
Q
GD
GS
V
= 40 V
V
= 0 V
DS
GS
T = 25°C
T = 25°C
C
J
J
RSS
1
0
I
D
= 50 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
100
t
d(off)
V
GS
= 0 V
t
f
t
r
10
100
t
d(on)
V
V
= 4.5 V
= 64 V
GS
DS
I
D
= 50 A
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
10
1K
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
T (initial) = 25°C
J
100
10
10 ms
10
T
V
= 25°C
≤ 10 V
C
T (initial) = 100°C
J
GS
Single Pulse
0.5 ms
1 ms
1
R
Limit
10 ms
DS(on)
Thermal Limit
Package Limit
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1K
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS6H800NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS6H800NLT1G
6H800L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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