NTMFS5C673NT1G [ONSEMI]
Single N−Channel Power MOSFET 60V, 50A, 10.7mΩ;型号: | NTMFS5C673NT1G |
厂家: | ONSEMI |
描述: | Single N−Channel Power MOSFET 60V, 50A, 10.7mΩ |
文件: | 总7页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET – Power, Single,
N-Channel
60 V, 10.7 mW, 50 A
NTMFS5C673N
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
60 V
10.7 mW @ 10 V
50 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
50
A
C
D
G (4)
q
JC
T
C
35
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
46
W
A
D
S (1,2,3)
N−CHANNEL MOSFET
R
(Note 1)
q
JC
T
C
= 100°C
23
Continuous Drain
Current R
T = 25°C
A
I
D
14
q
JA
MARKING
DIAGRAM
T = 100°C
A
10
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.6
1.8
290
W
D
D
R
(Notes 1 & 2)
q
JA
1
T = 100°C
A
S
S
S
G
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C673N
AYWZZ
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
D
Source Current (Body Diode)
I
52
81
A
S
5C673N = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
A
= Assembly Location
= Year
Energy (I
= 2 A)
L(pk)
Y
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.2
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
42
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 0
NTMFS5C673N/D
NTMFS5C673N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
29
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 35 mA
2.0
4.0
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
V
/T
J
−8.5
8.9
37
GS(TH)
R
V
GS
= 10 V
I = 7 A
D
10.7
DS(on)
g
FS
V
= 15 V, I = 25 A
DS D
R
T = 25°C
A
1.2
W
G
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
680
465
6.0
9.6
2.3
3.6
0.9
4.6
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 30 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
V
= 10 V, V = 30 V; I = 7 A
GS
GD
GP
GS
DS
D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
8.4
1.9
d(ON)
Rise Time
t
r
V
= 10 V, V = 30 V,
DS
GS
D
ns
V
I
= 7 A, R = 2.5 W
G
Turn−Off Delay Time
t
12.5
2.8
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.67
32
1.2
SD
J
V
= 0 V,
GS
S
I
= 7 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
16
ns
a
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 3 A
Discharge Time
t
16
b
Reverse Recovery Charge
Q
22
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C673N
TYPICAL CHARACTERISTICS
50
50
40
30
20
V
GS
= 10 V to 6.0 V
40
30
20
5.0 V
T = 25°C
J
4.5 V
4.0 V
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
11
10
16
15
T = 25°C
J
T = 25°C
D
J
I
= 7 A
14
13
12
11
10
V
GS
= 10 V
9
8
7
9
8
5
6
7
8
9
10
1
11
21
31
41
51
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1,000,000
100,000
V
= 10 V
= 7 A
GS
2.0
I
D
T = 175°C
J
10,000
1000
100
1.5
1.0
0.5
T = 125°C
J
T = 85°C
J
T = 25°C
J
10
1
−50 −25
0
25
50
75
100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS5C673N
TYPICAL CHARACTERISTICS
10000
10
9
8
C
ISS
1000
100
7
6
5
4
3
2
C
OSS
Q
GD
Q
GS
10
1
V
DS
= 30 V
C
V
= 0 V
RSS
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 7 A
f = 1 MHz
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
V
GS
= 0 V
100
t
t
d(off)
10
1
1
d(on)
V
V
= 10 V
= 30 V
= 7 A
GS
t
t
f
DS
I
D
T = 125°C
J
T = 25°C
J
T = −55°C
J
r
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
1 ms
500 ms
10 ms
T (initial)= 25°C
J
T
V
= 25°C
C
T (initial)= 100°C
J
≤ 10 V
GS
1
Single Pulse
1
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
0.1
0.01
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS5C673N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C673NT1G
5C673N
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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