NTMFD001N03P9 [ONSEMI]
功率 Mosfet 30V POWERTRENCH® Power Clip;
| 型号： | NTMFD001N03P9 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 Mosfet 30V POWERTRENCH® Power Clip |
| 文件： | 总12页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Dual,
N-Channel, Power Clip,
Trench, Asymmetric
30ꢀV
NTMFD001N03P9
www.onsemi.com
Features
• Small Footprint (5x6 mm) for Compact Design
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• Low R
to Minimize Conduction Losses
DS(on)
5.0 mW @ 10 V
6.5 mW @ 4.5 V
1.0 mW @ 10 V
1.2 mW @ 4.5 V
• Low Q and Capacitance to Minimize Driver Losses
G
Q1
30 V
57 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Q2
30 V
165 A
Typical Applications
• DC−DC Converters
• System Voltage Rails
PIN1
PQFN8
POWER CLIP
CASE 483AR
Bottom
MARKING DIAGRAM
$Y&Z&3&K
39HN
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
39HN = Specific Device Code
ELECTRICAL CONNECTION
HSG
GR
V+
V+
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2021 − Rev. 4
NTMFD001N03P9/D
NTMFD001N03P9
Table 1. MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Q1
30
Q2
30
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
V
DSS
V
20
+16 V −12 V
165
119
V
GS
(Note 3)
Steady State
Steady State
Steady State
T
T
T
= 25°C
= 85°C
= 25°C
I
57
A
q
D
JC
C
C
C
41
Power Dissipation R
(Note 3)
P
25
41
W
A
q
D
D
D
JC
Continuous Drain Current R
(Note 1, 3)
T = 25°C
A
I
16
38
q
D
JA
T = 85°C
A
12
27
Power Dissipation R
(Note 1, 3)
T = 25°C
A
P
2.1
11
2.3
W
A
q
JA
Continuous Drain Current R
(Note 2, 3)
T = 25°C
A
I
25
q
D
JA
T = 85°C
A
8
18
Power Dissipation R
(Note 2, 3)
T = 25°C
A
P
0.96
300
42
1.04
500
104
W
A
q
JA
Pulsed Drain Current
Single Pulse Drain−to−Source Avalanche Energy
T = 25°C, t = 10 ms
A
I
DM
p
E
mJ
AS
Q1: I = 5.3 A , L = 3 mH (Note 4)
L
pk
Q2: I = 8.35 A , L = 3 mH (Note 4)
L
pk
Operating Junction and Storage Temperature
T , T
−55 to 150
260
°C
°C
J
stg
Lead Temperature Soldering Reflow for Soldering Purposes
(1/8″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 2, 3)
Symbol
RqJC
Q1 Max
5.0
Q2 Max
3.0
Units
°C/W
RqJA
60
55
RqJA
130
120
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular
conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R
is determined
Q
CA
by the user’s board design.
4. Q1 100% UIS tested at L = 0.1 mH, I = 20 A.
AS
Q2 100% UIS tested at L = 0.1 mH, I = 47 A.
AS
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2
NTMFD001N03P9
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
V
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
V
= 0 V, I = 250 mA
(BR)DSS
GS
D
V
= 0 V, I = 1 mA
D
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
15
16
mV/°C
mA
I
= 250 mA, ref to 25°C
= 50 mA, ref to 25°C
(BR)DSS
T
J
D
I
D
Zero Gate Voltage Drain Current
I
1
DSS
V
V
= 0 V,
= 24 V
GS
DS
T = 25°C
J
500
100
100
Gate−to−Source Leakage Current
I
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
= 0 V, V = 16 V
DS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
3.0
3.0
V
V
= V , I = 250 mA
1.0
1.0
GS(TH)
GS
DS
D
V
= V , I = 1 mA
DS D
GS
Threshold Temperature Coefficient
V
R
−5
−3
mV/°C
mW
I
D
= 250 mA, ref to 25°C
= 50 mA, ref to 25°C
GS(TH)
/ T
J
I
D
Drain−to−Source On Resistance
V
= 10 V, I = 17 A
4.5
5.4
0.75
0.9
93
5.0
6.5
1.0
1.2
DS(on)
GS
D
V
= 4.5 V, I = 14 A
D
GS
V
= 10 V, I = 40 A
Q2
GS
GS
D
V
= 4.5 V, I = 37 A
D
Forward Transconductance
Gate Resistance
g
FS
V
= 5 V, I = 14 A
Q1
Q2
Q1
Q2
S
DS
DS
D
V
= 5 V, I = 37 A
248
1
D
R
W
G
T = 25°C
A
1
CHARGES & CAPACITANCES
Input Capacitance
C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1224
6575
397
2086
42
pF
pF
pF
nC
nC
nC
nC
ISS
Output Capacitance
Reverse Capacitance
Total Gate Charge
C
OSS
V
= 0 V, V = 15 V,
GS
DS
f = 1 MHz
C
RSS
138
7.9
Q
G(TOT)
43
Q1: V = 4.5 V,
GS
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
2.0
GD
GS
V
= 15 V, I = 14 A
DS
D
Q2: V = 4.5 V,
GS
9.5
V
= 15 V, I = 37 A
DS
D
3.1
15.8
17
Q
V
= 10 V, V = 15 V, I = 14 A
GS DS D
G(TOT)
V
GS
= 10 V, V = 15 V, I = 37 A
93
DS
D
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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3
NTMFD001N03P9
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Symbol
Test Condition
FET
Min
Typ
Max
Unit
ns
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
36
d(ON)
12.6
30.7
21.5
64.7
17.5
23.5
7.3
Rise Time
t
ns
r(ON)
V
GS
= 4.5 V
Q1: I = 14 A, V = 15 V,
D
DD
= 6 W
R
G
Turn−Off Delay Time
Fall Time
t
ns
d(OFF)
Q2: I = 37 A, V = 15 V,
D
DD
= 6 W
R
G
t
f
ns
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8.0
8.6
ns
ns
ns
ns
d(ON)
Rise Time
t
2.0
r(ON)
V
= 10 V
GS
Q1: I = 17 A, V = 15 V,
18.2
23.5
4.5
D
DD
= 6 W
R
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
Q2: I = 40 A, V = 15 V,
D
DD
= 6 W
R
G
t
f
2.0
4.5
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
Q1
Q2
0.79
0.66
0.77
0.63
23
1.2
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 14 A
T = 125°C
J
T = 25°C
J
V
S
= 0 V,
= 37 A
GS
I
T = 125°C
J
Reverse Recovery Time
t
Q1
Q2
Q1
Q2
ns
RR
V
GS
= 0 V
4.6
Q1: I = 14 A, dI/dt = 100 A/ms
Q2: I = 37 A, dI/dt = 240 A/ms
S
Reverse Recovery Charge
Q
8.0
nC
RR
S
68.3
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q1
60
50
40
30
20
60
V
GS
= 4.5 V to 10 V
V
DS
= 10 V
50
40
30
20
3.5 V
3.0 V
T = 25°C
J
10
0
10
0
2.5 V
T = 125°C
J
T = −55°C
J
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
I
= 17 A
V
= 4.5 V
= 10 V
GS
V
GS
6
4
3.0
2.5
2.0
2
0
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50 55 60
I , DRAIN CURRENT (A)
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.6
1E+06
V
= 10 V
= 17 A
GS
1E+05
1E+04
1E+03
1E+02
1.4
1.2
1.0
0.8
0.6
0.4
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1E+01
1E+00
1E−01
T = 25°C
J
0.2
0
1E−02
1E−03
−50 −25
0
25
50
75
100
125
150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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5
NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q1
10K
1K
10
9
Q
GTOT
C
ISS
8
7
6
5
C
OSS
RSS
100
C
4
3
2
1
0
Q
Q
GD
GS
10
1
V
= 0 V
GS
V
DS
= 15 V
T = 25°C
J
T = 25°C
J
f = 1 MHz
I
D
= 14 A
0
5
10
15
20
25
30
0
2
4
6
8
10 12
14 16
18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
V
GS
= 0 V
t
t
d(off)
10
d(on)
t
r
T = 150°C
J
1
t
f
V
V
= 4.5 V
= 15 V
GS
DS
I
D
= 14 A
T = 25°C
T = −55°C
J
J
0.1
10
1
10
R , GATE RESISTANCE (W)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
−V , SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
10
Single Pulse
= 5.0°C/W
R
q
JC
100 ms
T
= 100°C
J(initial)
T
C
= 25°C
1
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
T
= 125°C
J(initial)
0.1
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (S)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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6
NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q1
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
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NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q2
100
90
80
70
60
50
40
30
20
100
V
GS
= 2.8 V to 10 V
T = 125°C
J
DS
90
80
70
60
50
40
30
20
V
= 10 V
2.5 V
T = 25°C
J
10
0
10
0
T = 125°C
T = −55°C
J
J
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
2.00
1.75
1.50
1.25
1.00
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T = 25°C
D
T = 25°C
J
J
I
= 37 A
V
= 4.5 V
= 10 V
GS
0.75
0.50
V
GS
0.25
0
0.5
0
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.6
1E−01
1E−02
1E−03
1E−04
I
V
= 40 A
D
1.4
1.2
1.0
0.8
0.6
0.4
= 10 V
GS
T = 150°C
J
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E−05
1E−06
0.2
0
−50 −25
0
25
50
75
100 125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q2
100K
10K
1K
10
8
Q
GTOT
C
ISS
6
4
C
OSS
Q
Q
GD
GS
C
V
= 15 V
RSS
DS
100
10
V
= 0 V
GS
2
0
T = 25°C
J
T = 25°C
J
I
D
= 37 A
f = 1 MHz
0
5
10
15
20
25
30
0
10 20 30 40 50 60 70 80 90 100
Q , TOTAL GATE CHARGE (nC)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source Voltage vs. Total
Charge
1E−07
100
10
1
V
= 4.5 V
GS
T = 125°C
J
T = −55°C
J
T = 25°C
J
I
D
= 37 A
t
r
T = 25°C
J
t
t
d(off)
d(on)
1E−08
1E−09
0.1
t
f
0.01
V
GS
= 0 V
0.001
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (W)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10 ms
T
T
= 125°C
100 ms
J(initial)
10
Single Pulse
1 ms
R
T
= 3.0°C/W
= 25°C
q
JC
10 ms
= 100°C
C
J(initial)
1
R
Limit
100 ms/
DC
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME IN AVALANCHE (s)
AV
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
Figure 25. Maximum Drain Current vs. Time in
Avalanche
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NTMFD001N03P9
TYPICAL CHARACTERISTICS − Q2
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.01
0.02
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 26. Transient Thermal Impedance
ORDERING INFORMATION
Device
Package
Shipping
NTMFD001N03P9
DFN8
(Pb−Free)
3000 / Tape & Reel
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
PAGE 1 OF 1
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相关型号：
NTMFD1D1N02X
Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A, 0.87mΩ/178A, Asymmetric, Power Clip Dual 5x6
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