NTHL099N60S5 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247;![NTHL099N60S5](http://pdffile.icpdf.com/pdf2/p00359/img/icpdf/NTHL099N60S5_2203460_icpdf.jpg)
型号: | NTHL099N60S5 |
厂家: | ![]() |
描述: | Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247 |
文件: | 总9页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, SUPERFET) V,
Easy Drive, TO247-3L
600 V, 99 mW, 33 A
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
99 mW @ 10 V
33 A
D
NTHL099N60S5
Description
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies.
Features
G
S
• 650 V @ T = 150°C
J
• Typ. R
= 79.2 mW
• 100% Avalanche Tested
DS(on)
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
D
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
S
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
MARKING DIAGRAM
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
33*
20*
184
95*
95*
A
C
D
T099N
60S5
AYWWZZ
T
C
Power Dissipation
T
C
T
C
T
C
P
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
T099N60S5 = Specific Device Code
Operating Junction and Storage Temperature T , T
Range
−55 to
+150
°C
J
STG
A
YWW
ZZ
= Assembly Location
= Data Code (Year & Week)
= Assembly Lot
Source Current (Body Diode)
I
33*
A
S
Single Pulse Avalanche
Energy
I = 5.1 A,
G
E
AS
232
mJ
L
R
= 25 W
ORDERING INFORMATION
Avalanche Current
I
5.1
1.84
120
50
A
AS
Device
NTHL099N60S5
Package
Shipping
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
TO−247
30 Units / Tube
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 13.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 2
NTHL099N60S5/D
NTHL099N60S5
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.68
40
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 13.5 A, T = 25_C
−
2.4
−
79.2
−
99
4.0
−
mW
V
DS(on)
GS
D
J
V
= V , I = 2.8 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 13.5 A
26
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2500
41
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
642
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
70
48
12
14
6.9
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 13.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
26
17
92
4.2
−
−
−
−
ns
d(on)
GS
D
DD
I
= 13.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 13.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 13.5 A,
310
4627
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL099N60S5
TYPICAL CHARACTERISTICS
60
50
40
100
7.0 V
V
GS
= 10 V
6.0 V
V
DS
= 20 V
T
C
= 25°C
30
20
10
0
10
5.0 V
T
= 25°C
C
4.5 V
4.0 V
T
= 150°C
T = −55°C
C
C
1
0
5
10
15
20
2
0
0
3
4
5
6
1.2
50
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.15
0.10
100
T
= 25°C
C
V
= 0 V
GS
10
1
T
C
= 25°C
V
= 10 V
GS
V
= 20 V
GS
0.05
0
T
C
= 150°C
T
C
= −55°C
0.1
0
10
20
30
40
50
60
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
V
, DIODE FORWARD VOLTAGE (V)
D
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
5
4
3
2
1
0
10
10
10
10
10
10
10
10
V
= 0 V
C
C
C
= C + C (C = shorted)
GS GD DS
GS
ISS
I
= 13.5 A
f = 250 kHz
= C + C
= C
D
OSS
RSS
DS
GD
GD
V
= 130 V
8
6
4
DS
C
V
= 400 V
ISS
DS
C
C
OSS
RSS
2
0
−1
10
0
100
200
300
400
500
600
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTHL099N60S5
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
= 0 V
= 10 mA
GS
V
I
= 10 V
= 13.5 A
GS
I
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
35
30
25
20
15
10
1000
100
10
10 ms
100 ms
1 ms
Operation in this Area is
Limited by R
DS(on)
10 ms
1
T
C
= 25°C
5
0
T = 150°C
J
DC
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
10
8
6
4
2
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NTHL099N60S5
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
Notes:
(t) = 0.68°C/W Max
Z
q
JC
D = 0.02
Duty Cycle, D = t /t
1
2
D = 0.01
T
JM
= P
x Z (t) + T
q
DM JC C
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
NTHL099N60S5
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTHL099N60S5
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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7
NTHL099N60S5
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
NTHL099N60S5
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