NTH4LN040N65S3H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 62 A, 40 mΩ, TO-247 narrow 4lead;
| 型号： | NTH4LN040N65S3H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 62 A, 40 mΩ, TO-247 narrow 4lead |
| 文件： | 总10页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power,
N-Channel, SUPERFET) III,
FAST
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
40 mW @ 10 V
62 A
D
650 V, 40 mW, 62 A
NTH4LN040N65S3H
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
G
S1: Driver Source
S2: Power Source
S1
S2
POWER MOSFET
Consequently, SUPERFET III MOSFET FAST series is very
suitable for the various power systems for miniaturization and higher
efficiency.
D
S2
S1
G
Features
TO−247−4LD
CASE 340CW
• 700 V @ T = 150°C
J
• Typ. R
= 32 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 132 nC)
g
MARKING DIAGRAM
• Low Effective Output Capacitance (Typ. C
= 1267 pF)
oss(eff.)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
AYWWZZ
T040N
65S3H
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
A
YWW
ZZ
= Assembly Site Code
= Data Code (Year & Week)
= Assembly Lot Code
T040N65S3H
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2021 − Rev. 2
NTH4LN040N65S3H/D
NTH4LN040N65S3H
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
62
A
C
− Continuous (T = 100°C)
39
C
I
Drain Current
− Pulsed (Note 1)
174
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
675
AS
AS
I
8.2
E
3.79
120
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
379
W
W/°C
°C
D
C
− Derate Above 25°C
3.03
−55 to +150
260
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 8.2 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 31 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.33
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NTH4LN040N65S3H
T040N65S3H
TO−247 L4
Narrow Lead
Tube
N/A
30 Units
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2
NTH4LN040N65S3H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25_C
0.63
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 650 V, V = 0 V
−
−
−
−
2.6
−
3
mA
DSS
DS
GS
V
DS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
V
GS
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 6.8 mA
2.4
−
−
4.0
40
−
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
= 10 V, I = 31 A
32
85
GS
DS
D
g
FS
V
= 20 V, I = 31 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
−
−
−
−
−
6513
97
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
V
= 400 V, V = 0 V, f = 250 kHz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
= 0 V to 400 V, V = 0 V
1267
170
132
36
oss(eff.)
DS
GS
C
V
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
= 400 V, I = 31 A, V = 10 V
DS
D
GS
Q
gs
(Note 4)
Q
34
gd
ESR
f = 1 MHz
0.7
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
−
−
−
−
39
9
−
−
−
−
ns
ns
ns
ns
d(on)
V
= 400 V, I = 31 A,
D
t
r
DD
GS
V
= 10 V, R = 2.2 W
g
t
95
2.8
d(off)
(Note 4)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
62
174
1.2
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 31 A
−
V
GS
SD
t
rr
503
11.4
ns
mC
V
GS
= 0 V, I = 31 A,
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTH4LN040N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
120
100
80
1000
10 V
6.0 V
7.0 V
250 ms Pulse Test
V = 20 V
250 ms Pulse Test
T
C
= 25°C
DS
100
60
5.0 V
40
20
0
10
1
T = 25°C
J
4.5 V
V
= 4.0 V
T = −55°C
T = 150°C
J
GS
J
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.10
0.08
0.06
0.04
1000
100
V
= 0 V
250 ms Pulse Test
GS
T
= 25°C
C
10
1
V
V
= 10 V
GS
= 20 V
GS
0.02
0
T = 150°C
T = 25°C
J
T = −55°C
J
J
0.1
0
20
40
60
80
100
120
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
V
, BODY DIODE FORWARD VOLTAGE (V)
D
SD
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Drain Current and Gate Voltage
6
10
10
8
C
C
C
= C + C (C = shorted)
V
DS
= 130 V
V
= 0 V
f = 250 KHz
iss
gs
gd
ds
GS
I
= 31 A
5
D
= C + C
10
oss
rss
ds
gd
= C
gd
V
DS
= 400 V
4
10
C
iss
3
6
10
C
oss
2
10
4
C
rss
1
10
2
0
0
10
−1
10
0
100
200
300
400
500
600
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTH4LN040N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1.2
1.1
1.0
3.0
V
= 0 V
= 10 mA
V
= 10 V
GS
GS
I
D
I = 31 A
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
10
80
60
40
10 ms
100 ms
Operation in this
Area is Limited
1 ms
by R
DS(on)
20
0
1
10 ms
T
= 25°C
C
DC
T = 150°C
J
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTH4LN040N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
R
= 0.33°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
t
J
DM
1
Duty Cycle, D = t /t
t
1
2
Single Pulse
0.00001
2
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impedance
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6
NTH4LN040N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTH4LN040N65S3H
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
NTH4LN040N65S3H
PACKAGE DIMENSIONS
TO−247 4−LEAD, THIN LEADS
CASE 340CW
ISSUE A
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9
NTH4LN040N65S3H
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