NTDS015N15MC [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 15 mΩ;
| 型号： | NTDS015N15MC |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 15 mΩ 栅 |
| 文件： | 总7页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 15 mW, 50 A
NTDS015N15MC
Features
• Shielded Gate MOSFET Technology
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• Max R
• Low R
= 15 mW at V = 10 V, I = 29 A
GS D
DS(on)
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
15 mW @ 10 V
50 A
D
Typical Applications
• Primary Side for 48 V Isolated Bus
• SR for MV Secondary Applications
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
S
V
DSS
N−CHANNEL MOSFET
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
I
50
A
D
MARKING
DIAGRAM
q
JC
Steady
State
(Note 2)
T
= 25°C
C
Power Dissipation
P
83
11
W
A
D
4
R
(Note 2)
q
JC
Drain
4
Continuous Drain
Current R
I
D
q
JA
AYWW
015
N15MCG
2
1
Steady
State
(Notes 1, 2)
T = 25°C
A
3
Power Dissipation
P
3.8
W
D
DPAK
CASE 369C
R
(Notes 1, 2)
q
JA
1
3
Gate
Source
Pulsed Drain Current
T
C
= 25°C, t = 100 ms
I
DM
246
A
2
p
Drain
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
015N15MCG = Specific Device Code
A
Y
WW
= Assembly Location
= Year
= Work Week
Single Pulse Drain−to−Source Avalanche
E
AS
150
mJ
Energy (I = 10 A , L = 3 mH)
L
pk
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
NTDS015N15MCT4G
Package
Shipping
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
DPAK
2500 / Tube
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2020 − Rev. 2
NTDS015N15MC/D
NTDS015N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.8
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
°C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
83
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1.0
DSS
GSS
GS
J
mA
V
= 120 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
= V , I = 162 mA
2.5
4.5
V
mV/°C
mW
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
V
/T
I = 162 mA, ref to 25°C
D
−8.2
11.8
12.6
58
GS(TH)
J
R
R
V
= 10 V, I = 29 A
15
DS(on)
DS(on)
GS
D
V
= 8 V, I = 15 A
16.8
GS
D
g
FS
V
= 10 V, I = 29 A
D
DS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2120
595
10.5
0.6
27
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 75 V
pF
DS
Reverse Transfer Capacitance
Gate−Resistance
R
1.2
W
G
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
7
G(TH)
nC
Q
11
V
GS
= 10 V, V = 75 V; I = 29 A
GS
GD
GP
DS
D
Q
V
4
5.5
66
V
Output Charge
Q
V
DD
= 75 V, V = 0 V
nC
OSS
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
16
5
d(ON)
t
r
V
= 10 V, V = 75 V,
DD
GS
D
ns
I
= 29 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
21
4
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0 V,
T = 25°C
J
0.89
1.2
GS
V
I
= 29 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
49
197
34
ns
RR
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 300 A/ms, I = 29 A
S
Q
nC
ns
RR
RR
t
RR
V
GS
= 0 V, V = 75 V
DD
dI /dt = 1000 A/ms, I = 29 A
S
S
Q
345
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTDS015N15MC
TYPICAL CHARACTERISTICS
5
120
90
10 V
V
GS
= 5.5 V
7.0 V
8.0 V
6 V
4
3
2
6.0 V
60
8 V
V
GS
= 5.5 V
7 V
30
0
1
0
10 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
0
1
2
3
4
5
6
7
8
9
10
0
4
0
30
60
90
120
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
60
45
30
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 29 A
I
= 29 A
D
V
GS
= 10 V
T = 150°C
J
15
0
T = 25°C
J
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
120
90
200
100
V
DS
= 10 V
V
GS
= 0 V
10
1
60
T = 25°C
J
0.1
30
0
T = 175°C
J
0.01
T = 175°C
T = −55°C
J
T = 25°C
J
T = −55°C
J
J
0.001
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
NTDS015N15MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 25 V
I
D
= 29 A
C
ISS
V
DD
= 75 V
V
DD
= 50 V
1K
C
OSS
6
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
6
12
18
24
30
0.1
1
10
100 150
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
60
45
30
100K
10K
1K
V
= 10 V
GS
V
= 8 V
GS
100
10
15
0
R
= 1.8°C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1000
100
10
10 ms
100 ms
T
= 25°C
J(initial)
10
1 ms
10 ms
T
= 150°C
T
= 25°C
T
= 100°C
J(initial)
C
J(initial)
1
0.1
Single Pulse
R
= 1.8°C/W
q
JC
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.01
0.001
0.01
0.1
1
10
100
0.1
1
10
t , TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
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4
NTDS015N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
P
DM
0.01
Notes:
= 1.8°C/W
0.01
R
q
JC
Single Pulse
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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