NTD78N031 [ONSEMI]
Power MOSFET 25 V, 78 A, Single NâChannel, DPAK; 功率MOSFET的25 V ， 78 A单娜????通道， DPAK
| 型号： | NTD78N031 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 25 V, 78 A, Single NâChannel, DPAK |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD78N03
Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
• Low R
DS(on)
• Optimized Gate Charge
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• Pb−Free Packages are Available
V
R
DS(on)
TYP
I MAX
D
(BR)DSS
Applications
4.6 @ 10 V
6.5 @ 4.5 V
25 V
78 A
• Desktop VCORE
• DC−DC Converters
• Low Side Switch
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
25
Unit
V
N−Channel
G
V
DSS
V
"20
14.8
11.5
2.3
V
GS
S
Continuous Drain
Current (Note 1)
T
T
T
= 25°C
= 85°C
= 25°C
I
A
C
C
C
D
4
4
Power Dissipation
(Note 1)
P
W
A
D
D
D
4
Continuous Drain
Current (Note 2)
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
I
11.4
8.8
D
2
Steady
State
1
1
2
3
1
2
3
3
Power Dissipation
(Note 2)
P
1.4
W
A
CASE 369AD
IPAK
(Straight Lead)
CASE 369AA
DPAK
(Bend Lead) (Straight Lead)
CASE 369D
DPAK
Continuous Drain
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
I
78
56
64
D
Current (R
)
q
JC
STYLE 2
STYLE 2
Power Dissipation
(R
P
W
)
q
JC
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Pulsed Drain Current
t = 10 ms
I
210
45
A
A
p
DM
Current Limited by Package
Drain to Source dV/dt
T = 25°C
A
I
DmaxPkg
4
dV/dt
8.0
V/ns
°C
A
Drain
4
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T , T
J
−55 to 175
78
Drain
stg
I
S
Single Pulse Drain−to−Source Avalanche
E
722.5
mJ
AS
Energy (V = 24 V, V = 10 V,
DD
GS
L = 5.0 mH, I (pk) = 17 A, R = 25 W)
L
G
Lead Temperature for Soldering Purposes
T
260
°C
2
L
1
2
3
(1/8″ from case for 10 seconds)
Drain
1
3
Gate Drain Source
Gate Source
1
2
3
THERMAL RESISTANCE
Gate Drain Source
Junction−to−Case (Drain)
R
q
JC
R
q
JA
R
q
JA
1.95
65
°C/W
Y
= Year
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
WW
= Work Week
110
78N03 = Device Code
= Pb−Free Package
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
September, 2006 − Rev. 6
NTD78N03/D
NTD78N03
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
25
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
24
mV/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.5
10
mA
DSS
J
V
V
= 0 V,
= 20 V
GS
DS
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.0
1.6
−5.0
4.6
6.5
22
3.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
mV/°C
mW
GS(TH)
J
R
DS(on)
V
= 10 V, I = 78 A
6.0
7.8
GS
D
V
= 4.5 V, I = 36 A
D
GS
Forward Transconductance
gFS
V
= 10 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
1920
960
420
25.5
2.4
2250
35
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
pF
V
= 12 V
DS
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
G(TH)
V
= 4.5 V, V = 20 V,
DS
GS
nC
I
= 20 A
D
Q
5.3
GS
GD
Q
18.2
t
11
68
23
42
d(on)
Rise Time
t
r
V
V
= 4.5 V, V = 20 V,
DS
GS
I
ns
V
= 20 A, R = 3.0 W
D
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
J
0.83
0.7
39
1.0
SD
= 0 V,
GS
I
= 20 A
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
ta
17.8
21
ns
V
= 0 V, dIs/d = 100 A/ms,
t
GS
I
= 20 A
S
Discharge Time
tb
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
33
nC
RR
L
2.49
0.02
3.46
1.0
S
D
G
L
nH
Ta = 25C
Gate Inductance
L
Gate Resistance
R
W
G
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD78N03
100
90
160
150
V
= 4 V
GS
V
≥ 10 V
DS
3.8 V
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
4.5 V
5 V
80
70
3.6 V
3.4 V
9 V
60
50
3.2 V
3 V
40
30
20
10
0
T = 125°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
2.6 V
1
2
3
4
5
6
0
2
4
6
8
10
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.015
V
= 10 V
GS
T = 25°C
J
T = 125°C
J
0.01
V
= 4.5 V
= 10 V
GS
T = 25°C
J
V
GS
0.005
0
0.003
0.002
0.001
0
T = −55°C
J
10
20
30
40
50
60
70
80
55
60
65
70
75
80
I , DRAIN CURRENT (A)
D
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance versus
Drain Current and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
2.5
2
100000
10000
1000
100
V = 0 V
GS
I
V
= 78 A
D
= 4.5 V
DS
T = 150°C
J
T = 125°C
J
1.5
1
0.5
0
10
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD78N03
6000
5000
4000
3000
2000
8
20
15
Q
V
= 0 V
V
= 0 V
GS
T
DS
T = 25°C
J
V
DS
C
iss
6
4
2
0
C
V
rss
GS
10
5
Q
Q
2
1
C
iss
1000
0
C
oss
I
= 20 A
D
T = 25°C
J
C
rss
0
35
10
5
0
5
10
15
20
25
0
5
10
15
20
25
30
V
V
DS
GS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
80
70
60
50
40
30
20
1000
100
V
I
V
= 20 V
= 20 A
= 4.5 V
V
= 0 V
DS
GS
GS
T = 25°C
J
D
t
t
r
f
t
d(off)
t
d(on)
10
1
10
0
1
10
R , GATE RESISTANCE (OHMS)
100
0.5
0.6 0.7
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.8
0.9
1.0
1.1
1.2
V
G
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
800
700
600
500
400
300
200
1000
100
I
= 78 A
D
10 ms
100 ms
1 ms
10
V
= 20 V
GS
10 ms
dc
SINGLE PULSE
= 25°C
T
C
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100
0
0.1
25
50
75
100
125
150
175
0.1
1
10
100
T , STARTING JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD78N03
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 13. Diode Reverse Recovery Waveform
1000
100
10
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
R
(t) = r(t) R
q
JA
q
JA
P
(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.1
t
2
1
T
− T = P
A
R
(t)
q
JA
J(pk)
(pk)
SINGLE PULSE
1E−04
DUTY CYCLE, D = t /t
1 2
0.01
1E−05
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
t, TIME (seconds)
Figure 14. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
†
Order Number
NTD78N03
Package
Shipping
DPAK
75 Units/Rail
75 Units/Rail
NTD78N03G
DPAK
(Pb−Free)
NTD78N03T4
DPAK
2500 Tape & Reel
75 Units/Rail
NTD78N03T4G
DPAK
(Pb−Free)
NTD78N03−1
DPAK Straight Lead
NTD78N03−1G
DPAK Straight Lead
(Pb−Free)
NTD78N03−35
DPAK−3 Straight Lead
(3.5 " 0.15 mm)
75 Units/Rail
NTD78N03−35G
DPAK−3 Straight Lead
(3.5 " 0.15 mm)
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD78N03
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
9.80 10.40
U
0.46
0.58
L
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
F
J
0.020
0.035 0.050
0.155 −−−
−−−
L
D 2 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD78N03
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
C
B
R
2. CONTROLLING DIMENSION: INCH.
V
S
INCHES
DIM MIN MAX
MILLIMETERS
E
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
4
2
Z
A
K
1
3
2.29 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
−T−
SEATING
PLANE
K
R
S
V
Z
0.155
−−−
J
F
STYLE 2:
PIN 1. GATE
H
D 3 PL
2. DRAIN
3. SOURCE
4. DRAIN
G
M
T
0.13 (0.005)
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD−01
ISSUE O
NOTES:
E
A
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
E3
E2
A1
L2
L1
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
D2
D
L
MILLIMETERS
DIM MIN
MAX
2.38
0.60
1.10
0.89
1.10
6.22
−−−
A
A1
A2
b
b1
D
D2
E
E2
E3
e
2.19
0.46
0.87
0.69
0.77
5.97
4.80
6.35
4.70
4.45
T
SEATING
PLANE
b1
A1
e
2X
A2
E2
6.73
−−−
5.46
3X b
M
0.13
T
2.28 BSC
D2
L
L1
L2
3.40
−−−
0.89
3.60
2.10
1.27
OPTIONAL
CONSTRUCTION
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTD78N03/D
相关型号：
NTD78N03G
11.4A, 25V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3
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