NTC080N120SC1 [ONSEMI]
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die;
| 型号： | NTC080N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die |
| 文件： | 总8页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
80ꢀmohm, 1200ꢀV, M1, Die
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
110 mW @ 20 V
31 A
N−CHANNEL MOSFET
D
NTC080N120SC1
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
G
S
DIE DIAGRAM
Features
• 1200 V @ T = 175°C
J
G
• Typ R
= 80 mW at V = 20 V, I = 20 A
GS D
DS(on)
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
S1
S2
Applications
• Industrial Motor Drive
• UPS
• Boost Inverter
• PV Charger
Die Information
S Wafer Diameter
6 inch
S Die Size
2,900 x 2,900 mm
S Metallization
⋅ Top
Ti/TiN/Al
5 mm
⋅ Back
Ti/V/Ni/Ag
S Die Thickness
S Gate Pad Size
Typ. 200 mm
632 x 242.5 mm
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 2
NTC080N120SC1/D
NTC080N120SC1
Die Cross Section
Die Layout
2900
632
Source
2
Source
1
Source
3
Passivation
(Polyimide)
G
N- Epic
2496
2900
S1
S2
N+
Substrate
1184
1184
Passivation Information
− Passivation Material: Polymide (PSPI)
− Passivation Type: Local Passivation
− Passivation Thickness 10 mm
: Passivation Area
Die Layout
Figure 1. Bare Die Dimensions
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2
NTC080N120SC1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
1200
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
V
DSS
V
−15/+25
−5/+20
V
GS
Recommended Operation Values of Gate−
to−Source Voltage
T
C
< 175°C
V
GSop
V
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
31
A
q
JC
Power Dissipation R
P
178
22
W
A
q
D
JC
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
D
q
JC
Power Dissipation R
P
89
132
W
A
q
D
JC
Pulsed Drain Current (Note 2)
T
C
= 25°C
I
DM
Single Pulse Surge Drain Current Capability
T
C
= 25°C, t = 10 ms, R = 4.7 W
I
132
A
p
G
DSC
Operating Junction and Storage Temperature Range
Source Current (Body Diode)
T , T
−55 to +175
18
°C
A
J
stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
171
mJ
Energy (I
= 18.5 A, L = 1 mH) (Note 3)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
R
0.84
°C/W
q
JC
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
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3
NTC080N120SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
700
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
mA
mA
mA
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
GSS
Gate Threshold Voltage
V
R
V
= V , I = 5 mA
1.8
−5
−
2.7
−
4.3
+20
110
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 20 A, T = 25_C
80
114
13
mW
DS(on)
D
J
= 20 V, I = 20 A, T = 150_C
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 20 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
1112
80
−
−
−
−
−
−
−
pF
ISS
GS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
RSS
C
6.5
56
Q
V
= −5/20 V, V = 600 V, I = 20 A
nC
G(tot)
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
11
GS
Q
12
GD
R
f = 1 MHz
1.7
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
13
20
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 20 A, R = 4.7 W,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
22
d(off)
t
f
10
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
258
52
mJ
ON
OFF
TOT
E
E
311
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V
= −5 V
−
−
−
−
18
A
A
SD
GS
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
132
SDM
GS
Forward Diode Voltage
V
V
V
= −5 V, I = 10 A
−
−
−
−
−
4
16
62
5
−
−
−
−
−
V
ns
nC
mJ
A
SD
GS
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
t
= −5/20 V, I = 20 A,
SD
dI /dt = 1000 A/ms
RR
GS
S
Q
RR
E
REC
RRM
I
8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NTC080N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
70
56
42
28
14
0
8
V
GS = 20 V
V
GS = 8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 15 V
VGS = 16 V
GS = 17 V
VGS = 19 V
GS = 18 V
V
6
4
2
0
VGS = 10 V
V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 18 V
VGS = 17 V
VGS = 10 V
VGS = 8 V
VGS = 16 V
VGS = 15 V
VGS = 20 V
VGS = 19 V
0
4
8
12
16
20
0
10
20
30
40
50
60
70
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. On Region Characteristics
Figure 3. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
450
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 20 A
VGS = 20 V
360
270
180
90
ID = 20 A
TJ = 150oC
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150 175
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. Normalized On Resistance vs.
Junction Temperature
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
70
56
42
28
14
0
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
C
VDS = 20 V
TJ = 25oC
10
1
TJ = 175 o
C
TJ = −55 oC
TJ = 25 o
C
TJ = −55 oC
0.1
0
3
6
9
12
15
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 7. Source−to−Drain Diode Forward
Voltage vs. Source Current
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NTC080N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
20
15
10
5
10000
ID = 20 A
Ciss
VDD = 400 V
1000
VDD = 600 V
Coss
VDD = 800 V
100
Crss
10
f = 1 MHz
VGS = 0 V
1
0.1
0
0
10
20
30
40
50
60
1
10
100
800
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 8. Gate Charge Characteristics
Figure 9. Capacitance vs. Drain−to−Source
Voltage
30
10
40
30
20
10
0
R
qJC = 0.84 oC/W
Starting TJ = 25o C
VGS = 20 V
Starting TJ = 150 oC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 10. Unclamped Inductive Switching
Capability
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
1000
50000
SINGLE PULSE
qJC = 0.84oC/W
C = 25oC
R
100
10
T
10000
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1
1000
100
SINGLE PULSE
TJ = MAX RATED
qJC = 0.84oC/W
1 ms
10 ms
0.1
R
100 ms
T
C = 25 oC
0.01
0.1
1
10
100
1000 5000
0.00001
0.0001
0.001
0.01
0.1
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 12. Forward Bias Safe Operating Area
Figure 13. Single Pulse Maximum Power
Dissipation
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NTC080N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
P
0.2
0.1
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
0.01
Z
R
(t) = r(t) x R
o
qJC
qJC
= 0.84 C/W
SINGLE PULSE
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction−to−Case Transient Thermal Response Curve
ORDERING INFORMATION AND PACKAGE MARKING
Orderable Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTC080N120SC1
N/A
Die
Wafer
N/A
N/A
N/A
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7
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