NTAT6H406NT4G [ONSEMI]
N 沟道，功率 MOSFET，80V，175A，2.9mΩ;
| 型号： | NTAT6H406NT4G |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，80V，175A，2.9mΩ |
| 文件： | 总6页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTAT6H406N
MOSFET – N-Channel
80 V, 2.9 mΩ, 175 A
Features
• Low On−Resistance
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• High Current Capability
• 100% Avalanche Tested
• ATPAK Package is Pin−compatible with DPAK (TO−252)
• Pb−Free, Halogen Free and RoHS Compliance
V
R
(on) Max
I Max
D
DSS
DS
80 V
2.9 mΩ @ 10V
175 A
Typical Applications
ELECTRICAL CONNECTION
• Multi Lib Protection
• Motor Control
N−Channel
2.4
Specifications
Table 1. ABSOLUTE MAXIMUM RATING at T = 25°C
A
Parameter
Drain to Source Voltage
Symbol
Value
80
Unit
V
1
1: Gate
2: Drain
3: Source
4: Drain
V
DSS
V
GSS
Gate to Source Voltage
Drain Current (DC)
20
V
3
I
D
175
600
A
Drain Current (Pulse)
I
A
DP
PW ≤ 10 ms, Duty Cycle ≤ 1%
Power Dissipation
P
90
−55 to +150
151
W
_C
mJ
_C
D
T
C
= 25°C
Operating Junction and
Storage Temperature
T , T
J STG
DPAK / ATPAK
CASE 369AM
Single Pulse Drain to Source Avalanche
Energy (L = 0.1 mH, I
E
AS
= 55 A)
L(pk)
Lead Temperature for Soldering
Purposes, 3 mm from Case for 10 seconds
T
260
L
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ATP406
LOT No.
Table 2. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
1.38
Unit
_C/W
_C/W
Junction to Case Steady State (T = 25_C)
Junction to Ambient (Note 1)
R
θ
C
JC
R
77.2
θ
JA
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
2
1. Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2019 − Rev. 0
NTAT6H406N/D
NTAT6H406N
Table 3. ELECTRICAL CHARACTERISTICS at T = 25°C
A
Value
typ
min
max
Parameter
Symbol
Conditions
Unit
V
Drain to Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
= 1 mA, V = 0 V
80
BR DSS
D
GS
I
V
= 80 V, V = 0 V
10
μA
nA
V
DSS
DS
GS
I
V
GS
=
20 V, V = 0 V
100
4.0
GSS
DS
V
GS
(th)
V
= 10 V, I = 1 mA
2.0
DS
D
Forward Transconductance
g
V
= 10 V, I = 50 A
185
2.2
S
FS
DS
D
Static Drain to Source On−State
R
(on)
I
D
= 50 A, V = 10 V
2.9
mΩ
DS
GS
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−ON Delay Time
Rise Time
C
V
= 40 V, f = 1 MHz
8040
1120
40
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ISS
DS
C
OSS
RSS
C
t (on)
d
V
GS
= 10 V, V = 48 V,
77
DS
I
D
= 50 A, R = 50 Ω,
G
t
r
420
310
155
110
32.4
31.8
0.9
Turn−OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Q
V
= 48 V, V = 10 V,
G
DS GS
I
D
= 50 A
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Q
Q
V
GS
GD
SD
RR
I = 100 A, V = 0 V
S
1.5
GS
t
I = 50 A, V = 0 V,
S
90
ns
nC
GS
d /dt = 100 A/μs
I
Q
126
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTAT6H406N
TYPICAL CHARACTERISTICS
250
350
300
250
200
150
100
50
V = 10 V
DS
T
= 25°C
C
8 V
Single Pulse
6 V
200
150
100
50
10 V
5.5 V
T
= 125°C
C
T
= 25°C
C
T
= −55°C
C
V
= 5 V
GS
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
8
Gate to Source Voltage, V − V
GS
Drain to Source Voltage, V − V
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
10
9
Single Pulse
Single Pulse
I
= 50 A
I
= 50 A
D
C
D
GS
T
= 25°C
V
= 10 V
8
7
6
5
4
3
2
1
0
−50
−25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
11
12
Gate to Source Voltage, VGS − V
Case Temperature, T − °C
C
Figure 3. On−Resistance vs. Gate to Source Voltage
Figure 4. On−Resistance vs. Case Temperature
10000
1 000
V
V
= 48 V
= 10 V
V
= 0 V
DS
GS
GS
Single Pulse
100
1000
100
10
t (off)
d
T
= 125°C
C
t
r
t
f
T
= −55°C
C
10
1
t (on)
d
T
= 25°C
C
0,1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Diode Voltage V −V
Drain Current, I − A
D
SD
Figure 5. Diode Forward Voltage vs. Current
Figure 6. Switching Time vs. Drain Current
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3
NTAT6H406N
TYPICAL CHARACTERISTICS (continued)
100000
10
9
8
7
6
5
4
3
2
1
0
=1Mz
V
D
= 48 V
f = 1 MHz
DS
I
= 50 A
C
ISS
10000
1000
C
OSS
C
RSS
100
10
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
Drain to Source Voltage, V − V
Total Gate Charge, Q − nC
DS
G
Figure 7. Capacitance Variation
Figure 8. Gate to Source Voltage vs. Total Charge
1000
100
10
I
= 600 A (PW ≤ 10 μs)
DP
100
90
I
=175 A
D
100 μs
80
70
60
50
40
30
20
10
1 ms
10 ms
Operation in this
area is limited by
R
on).
DS(
DC operation
1
T
= 25°C
C
Single pulse
0,1
0.1
0
1
10
100
0
25
50
75
100
125
150
175
Case Temperature, T − °C
C
Drain to Source Voltage,V − V
DS
Figure 9. Safe Operating Area
Figure 10. Power Dissipation vs. Case Temperature
10
1
R
= 1.38°C/W
θ
JC
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.0001
0.01
1E−05
0.001
0.01
0.1
1
10
PULSE TIME [sec]
Figure 11. Thermal Response
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
DATE 29 FEB 2012
４
２
３
１
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67243E
DPAK (SINGLE GAUGE) / ATPAK
PAGE 1 OF 1
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