NSVT5551MR6T1G [ONSEMI]

NPN General-Purpose Amplifier;


型号：	NSVT5551MR6T1G
厂家：	ONSEMI
描述：	NPN General-Purpose Amplifier
文件：	总5页 (文件大小：290K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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NPN General-Purpose

Amplifier

ELECTRICAL CONNECTION

Collector

4, 6

NSVT5551MR6

Base

1, 3

Features

• This Device Has Matched Dies

Emitter

2, 5

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS

Pin 1

(T = 25°C, unless otherwise noted)

TSOT23 6−Lead

CASE 419BL

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

160

Unit

CEO

CBO

EBO

180

MARKING DIAGRAM

Collector Current − Continuous

Junction Temperature

600

°C

3S2 M

150

Storage Temperature Range

−55 to 150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

3S2

= Specific Device Code

= Date Code

THERMAL CHARACTERISTICS (Notes 1, 2)

(T = 25°C, unless otherwise noted)

PIN ASSIGNMENT

Characteristic

Symbol

Max

0.7

Unit

Power Dissipation (T = 25°C)

Derate Above 25°C

5.6

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

180

ꢀ

1. P total, for both transistors. For each transistor, P = 350 mW.

2. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)

with minimum land pattern size.

ORDERING INFORMATION

†

Device

NSVT5551MR6T1G

Shipping

Package

3000 / Tape &

Reel

TSOT23−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

March, 2022 − Rev. 0

NSVT5551MR6/D

NSVT5551MR6

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Collector−Emitter Breakdown Voltage

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cut−Off Current

Symbol

Test Condition

= 1 mA, I = 0

Min

160

180

Max

−

Unit

CEO

CBO

EBO

= 100 ꢁ A, I = 0

−

= 10 ꢁ A, I = 0

−

= 120 V, I = 0

−

ꢁ A

−

CBO

= 120 V, I = 0, T = 100°C

−

Emitter Cut−Off Current

= 4 V, I = 0

−

EBO

DC Current Gain

FE1

= 5 V, I = 1 mA

0.9

FE1

Variation Ratio of h

DIVID1

(Die1) / h (Die2)

1.1

−

FE1

Between Die 1 and Die 2

DC Current Gain

= 5 V, I = 10 mA

250

−

FE2

Variation Ratio of h

Between Die 1 and Die 2

DIVID2

FE2

(Die1) / h (Die2)

0.95

1.05

FE2

DC Current Gain

= 5 V, I = 50 mA

−

FE3

Variation Ratio of h

Between Die 1 and Die 2

DIVID3

FE3

(Die1) / h (Die2)

0.9

1.1

FE3

Collector−Emitter Saturation Voltage

(sat)

= 10 mA, I = 1 mA

−

0.15

0.20

= 50 mA, I = 5 mA

Base−Emitter Saturation Voltage

(sat)

= 10 mA, I = 1 mA

−

= 50 mA, I = 5 mA

−

Base−Emitter On Voltage

(on)

= 5 V, I = 10 mA

−

Difference of V (on)

DEL

(on)(Die) − V (on)(Die2)

−8

Between Die1 and Die 2

Output Capacitance

= 10 V, I = 0, f = 1 MHz

−

Input Capacitance

= 0.5 V, I = 0, f = 1 MHz

Current Gain Bandwidth Product

= 10 V, I = 10 mA,

100

300

MHz

f = 100 MHz

Noise Figure

= 5 V, I = 200 ꢁ A,

−

f = 1 MHz, R = 20 kꢂ ꢃ

B = 200 Hz

Small Signal Current Gain

= 10 V, I = 1.0 mA,

250

−

f = 10 kHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com

NSVT5551MR6

TYPICAL PERFORMANCE CHARACTERISTICS

500

= 1.0 V

= 5.0 V

300

200

T = 125°C

25°C

−55°C

100

7.0

5.0

0.1

0.2

0.3

0.5

0.7 1.0

3.0

2.0

5.0 7.0

100

I , COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

1.10

0.30

0.25

0.20

0.15

0.10

I /I = 10

1.00

0.90

0.80

0.70

0.60

0.50

−55°C

25°C

150°C

25°C

−55°C

0.40

0.30

0.20

0.05

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 2. Collector−Emitter Saturation Voltage

Figure 3. Base−Emitter Saturation Voltage

vs. Collector Current

100

1.10

1.00

0.90

= 10 V

−55°C

25°C

0.80

0.70

0.60

150°C

ibo

7.0

5.0

0.50

0.40

0.30

0.20

3.0

2.0

obo

1.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

V , REVERSE VOLTAGE (V)

Figure 4. Base−Emitter On Voltage

Figure 5. Capacitances

vs. Collector Current

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TSOT23 6−Lead

CASE 419BL

ISSUE A

DATE 31 AUG 2020

SCALE 2:1

GENERIC

MARKING DIAGRAM*

XXX MG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON83292G

TSOT23 6−Lead

PAGE 1 OF 1

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