NSVT1601CLTWG [ONSEMI]

Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single;
NSVT1601CLTWG
型号: NSVT1601CLTWG
厂家: ONSEMI    ONSEMI
描述:

Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single

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DATA SHEET  
www.onsemi.com  
Bipolar Transistor  
-160 V, -1.5 A, Low VCE(sat) PNP  
Single LFPAK  
LFPAK8 3.3x3.3, 0.65P  
CASE 760AD  
NST1601CL  
ELECTRICAL CONNECTION  
This device is bipolar junction transistor featuring high current, low  
saturation voltage, and high speed switching.  
C 5, 6, 7, 8  
Suitable for automotive applications. AEC−Q101 qualified and  
PPAP capable. (NSVT1601CLTWG)  
Features  
Complement to NST1602CL  
Large Current Capacitance  
B 4 E 1, 2, 3  
Low Collector to Emitter Saturation Voltage  
Thin Profile LFPAK8 3.3 x 3.3 mm Package  
High−Speed Switching  
MARKING DIAGRAM  
NST  
1601G  
AWLYW  
High Allowable Power Dissipation  
AEC−Q101 Qualified and PPAP Capable (NSVT1601CLTWG)  
NST1601  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
A
WL  
Y
W
G
Compliant  
= Year  
= Work Week  
= Pb−Free Package  
Typical Applications  
Load Switch  
Gate Driver Buffer  
DC−DC Converters  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Specifications  
ABSOLUTE MAXIMUM RATING at Ta = 25°C  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Value  
−180  
−160  
−6  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
V
V
I
C
−1.5  
A
Collector Current (Pulse)  
Collector Dissipation  
I
−2.5  
A
CP  
P
P
(Note 1)  
(Note 2)  
Tj  
0.8  
W
C
2.2  
C
Junction Temperature  
Storage Temperature  
175  
°C  
°C  
Tstg  
55 to +175  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Mounted on FRB with minimum pad of Copper 2 oz  
2. Mounted on FRB with 1 in/sq pad of Copper 2 oz  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
February, 2022 − Rev. 4  
NST1601CL/D  
 
NST1601CL  
ELECTRICAL CHARACTERISTICS at Ta = 25°C  
Value  
Typ  
Min  
Max  
Parameter  
Symbol  
Conditions  
Unit  
Collector Cutoff Current  
ICBO  
VCB = −180 V  
IE = 0 A  
−0.1  
mA  
Emitter Cutoff Current  
DC Current Gain  
IEBO  
hFE1  
VEB = −6 V  
IC = 0 A  
140  
130  
−0.1  
280  
mA  
VCE = −5 V  
IC = −100 mA  
hFE2  
VCE = −5 V  
IC = −500 mA  
GainBandwidth Product  
Output Capacitance  
fT  
VCE = −10 V  
IC = −100 mA  
87  
MHz  
pF  
V
Cob  
VCB = −10 V  
f = 1 MHz  
19  
Collector to Emitter Saturation Voltage  
VCE(sat)1  
VCE(sat)2  
VCE(sat)3  
VBE(sat)  
IC = −250 mA  
IB = −25 mA  
−0.08  
−0.06  
−0.1  
−0.8  
−0.16  
−0.12  
−0.2  
−1.2  
IC = −250 mA  
IB = −50 mA  
V
IC = −500 mA  
IB = −50 mA  
V
Base to Emitter Saturation Voltage  
IC = −250 mA  
IB = −25 mA  
V
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Turn−On Time  
V(BR)CBO IC = −10 mA, IE = 0 A  
V(BR)CEO IC = −1 mA, RBE = ∞  
V(BR)EBO IE = −10 mA, IC = 0 A  
−180  
−160  
−6  
V
V
V
t
on  
See Figure 1  
50  
1150  
40  
ns  
ns  
ns  
Storage Time  
t
stg  
Fall Time  
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
100m  
F
100V  
IC=10|B1=−10|B2=−500mA  
Figure 1. Switching Time Test Circuit  
ESD RATING  
Parameter  
Symbol  
HBM  
Value  
>2000, <4000  
>400  
Unit  
V
Class  
Class 2  
Class M4  
Electrostatic Discharge −Human Body Model  
Electrostatic Discharge −Machine Model  
MM  
V
www.onsemi.com  
2
 
NST1601CL  
TYPICAL CHARACTERISTICS  
1
1,8  
1,6  
1,4  
1,2  
1
IB = 80 mA 60 mA 50 mA  
IB = 4.5 mA  
0,9  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0
4.0 mA  
3.5 mA  
3.0 mA  
40 mA  
20 mA  
2.5 mA  
2.0 mA  
1.5 mA  
10 mA  
5 mA  
0,8  
0,6  
0,4  
0,2  
0
1.0 mA  
0.5 mA  
2 mA  
1 mA  
0
1
1
1
2
3
4
5
0
1
2
3
4
5
VCE, Collector to Emitter Voltage (V)  
VCE, Collector to Emitter Voltage (V)  
Figure 2. IC − VCE  
Figure 3. IC − VCE  
1000  
100  
10  
1000  
800  
600  
400  
200  
0
TA = 175°C  
VCE = −5 V  
25°C  
TA = −55°C  
−55°C  
25°C  
175°C  
1
10  
100  
1000 3000  
1
10  
100  
1000 3000  
IC, Collector Current (mA)  
IC, Collector Current (mA)  
Figure 4. hFE − IC  
Figure 5. VBE − IC  
1
10  
1
IC / IB = 5  
IC / IB = 10  
0,1  
25°C  
25°C  
0,1  
0,01  
TA = 175°C  
TA = 175°C  
−55°C  
−55°C  
0,01  
10  
100  
1000 3000  
1
10  
100  
1000 3000  
IC, Collector Current (mA)  
IC, Collector Current (mA)  
Figure 6. VCE(sat) − IC  
Figure 7. VCE(sat) − IC  
www.onsemi.com  
3
NST1601CL  
TYPICAL CHARACTERISTICS  
10  
10  
IC / IB = 10  
TA = 25°C  
IC / IB = 10  
1
0,1  
−55°C  
25°C  
1
IC / IB = 5  
TA = 175°C  
0,01  
0,1  
1
10  
100  
1000 3000  
1
10  
100  
1000 3000  
IC, Collector Current, (mA)  
IC, Collector Current, (mA)  
Figure 8. VBE(sat) − IC  
Figure 9. VCE(sat) − IC  
100  
10  
1
100  
10  
1
VCE = −10 V  
TA = 25°C  
f = 1 MHz  
TA = 25°C  
1
10  
100  
1000  
10000  
1
10  
100  
IC, Collector Current (mA)  
VCB, Collector−to−Base Voltage (V)  
Figure 10. fT − IC  
Figure 11. Cob − VCB  
10  
1
Mounted on FRB with 1 in/sq  
pad of Copper 2 oz  
2
1
0
PT = 1 ms  
DC Operation  
10 ms  
100 ms  
PC = 2.2 W  
PC = 0.8 W  
0.1  
0.01  
Ta = 25°C  
Single Pulse  
mounted on FRB  
Mounted on FRB with  
minimum pad of Copper 2 oz  
0.001  
0
50 100  
150  
200  
0.01  
0.1  
1
10  
100  
1000  
VCE, Collector−to−Emitter Voltage (V)  
Ta, Ambient Temperature (°C)  
Figure 12. Safe Operating Area  
Figure 13. Power Derating  
www.onsemi.com  
4
NST1601CL  
ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping (Qty / Packing)  
NSVT1601CLTWG  
NST1601G  
LFPAK8  
(Pb−Free / Halogen Free)  
3,000 / Tape & Reel  
NST1601CLTWG  
NST1601G  
LFPAK8  
(Pb−Free / Halogen Free)  
3,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
LFPAK8 3.3x3.3, 0.65P  
CASE 760AD  
ISSUE E  
DATE 16 NOV 2020  
GENERIC  
MARKING DIAGRAM*  
XXXXX  
XXXXX  
AWLYW  
XXXX = Specific Device Code  
A
= Assembly Location  
WL = Wafer Lot  
Y
= Year  
W
= Work Week  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON05544H  
LFPAK8 3.3x3.3, 0.65P  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2018  
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TECHNICAL PUBLICATIONS:  
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