NSVDAN222T1G [ONSEMI]
80 V 双共阴极开关二极管;![NSVDAN222T1G](http://pdffile.icpdf.com/pdf1/p00121/img/icpdf/DAN222_662922_icpdf.jpg)
型号: | NSVDAN222T1G |
厂家: | ![]() |
描述: | 80 V 双共阴极开关二极管 开关 光电二极管 整流二极管 |
文件: | 总1页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Transys
Electronics
L
I M I T E D
SOT-523 Plastic-Encapsulated Diode
SOT-523
DAN222
SWITCHING DIODE
FEATURES:
Power dissipation
PD:
150
mW (Tamb=25℃)
Collector current
IF:
100 mA
Collector-base voltage
VR: 80
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1
2
3
MARKING:
N
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)
IR
Test
conditions
IR= 100µA
MIN
MAX
UNIT
V
Reverse breakdown voltage
Reverse voltage leakage current
80
VR=70V
0.1
µA
Forward voltage
VF
V
IF=100mA
1.2
3.5
4
Diode capacitance
CD
trr
VR=6V, f=1MHz
VR=6V, IF=5mA
pF
ns
Reverse recovery time
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