NSVBC143JPDXV6T5G [ONSEMI]
PNP BRT with R1/R2 = 2.2/47kΩ and NPN BRT with R1/R2 = 47/47kΩ Complementary Bias Resistor Transistors;
| 型号： | NSVBC143JPDXV6T5G |
| 厂家： | 
ONSEMI |
| 描述： | PNP BRT with R1/R2 = 2.2/47kΩ and NPN BRT with R1/R2 = 47/47kΩ Complementary Bias Resistor Transistors |
| 文件： | 总8页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Complementary Bias
Resistor Transistors
R1 = 2.2/47 kW, R2 = 47 kW
PIN CONNECTIONS
(3)
(2)
(1)
R
1
R
2
Q
NPN and PNP Transistors with Monolithic
Bias Resistor Network
1
Q
2
R
2
R
1
NSVBC143JPDXV6
(4)
(5)
(6)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
MARKING DIAGRAM
SOT−563
CASE 463A
1
JKMG
Features
JK
M
G
=
=
=
Specific Device Code
Date Code*
Pb-Free Package
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable*
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)
A
1
2
Rating
Symbol
Max
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
V
CBO
V
CEO
50
Vdc
Collector Current − Continuous
Input Forward Voltage
I
100
12
mAdc
Vdc
C
V
IN(fwd)
Input Reverse Voltage
V
IN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
SOT−563
SOT−563
Shipping
NSVBC143JPDXV6T5G
NSVBC143JPDXV6T1G
8,000/Tape & Reel
4,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
DTC143JP/D
April, 2022 − Rev. 3
NSVBC143JPDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
NSVBC143JPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
P
D
T = 25°C
(Note 1)
357
2.9
mW
A
Derate above 25°C
(Note 1)
(Note 1)
mW/°C
Thermal Resistance,
Junction to Ambient
R
°C/W
q
JA
350
NSVBC143JPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 2)
Total Device Dissipation
P
D
T = 25°C
(Note 1)
500
4.0
mW
A
Derate above 25°C
(Note 1)
(Note 1)
mW/°C
Thermal Resistance,
Junction to Ambient
R
°C/W
q
JA
250
Junction and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
1. FR−4 @ Minimum Pad.
2. Both junction heated values assume total power is sum of two equally powered channels.
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2
NSVBC143JPDXV6
ELECTRICAL CHARACTERISTICS (T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.2
−
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector-Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector-Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 5.0 mA, V = 10 V)
80
140
−
C
CE
Collector-Emitter Saturation Voltage (Note 3)
(I = 10 mA, I = 0.3 mA)
V
V
CE(sat)
−
−
0.25
C
B
Input Voltage (Off)
(V = 5.0 V, I = 100 mA) (NPN)
V
Vdc
i(off)
i(on)
−
−
1.2
0.6
0.8
0.5
CE
C
(V = 5.0 V, I = 100 mA) (PNP)
CE
C
Input Voltage (On)
(V = 0.3 V, I = 2.0 mA) (NPN)
V
Vdc
Vdc
3.0
1.1
1.6
0.8
−
−
CE
C
(V = 0.3 V, I = 5.0 mA) (PNP)
CE
C
Output Voltage (On)
(V = 5.0 V, V = 3.5 V, R = 1.0 kW) (NPN)
V
OL
−
−
−
−
0.2
0.2
CC
B
L
(V = 5.0 V, V = 2.5 V, R = 1.0 kW) (PNP)
CC
B
L
Output Voltage (Off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
Vdc
4.9
−
−
CC
B
L
Input Resistor (NPN)
Input Resistor (PNP)
R1
R /R
32.9
1.5
47
61.1
2.9
kW
2.2
Resistor Ratio (NPN)
Resistor Ratio (PNP)
0.8
0.038
1.0
0.047
1.2
0.056
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
400
350
300
250
200
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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3
NSVBC143JPDXV6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
10
1
1000
I /I = 10
V
= 10 V
C
B
CE
T = 75°C
A
25°C
T = −25°C
A
−25°C
100
10
25°C
75°C
0.1
0.01
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
3.2
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
2.8
2.4
2.0
1.6
1.2
0.8
T = −25°C
A
I
E
75°C
25°C
0.1
0.01
0.4
0
V
O
= 5 V
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
O
= 0.2 V
25°C
75°C
T = −25°C
A
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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4
NSVBC143JPDXV6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
25°C
100
150°C
25°C
−55°C
150°C
0.1
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
7
6
5
4
3
2
1
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
150°C
−55°C
I
E
25°C
0.1
0.01
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
1
2
3
4
V , REVERSE BIAS VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
10
25°C
1
−55°C
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M
= Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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