NST489AMT1-D [ONSEMI]
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications; 高电流表面贴装NPN硅低VCE （ sat）的开关晶体管，用于便携式应用负荷管理
| 型号： | NST489AMT1-D |
| 厂家： | 
ONSEMI |
| 描述： | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST489AMT1,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low VCE(sat)
Switching Transistor for
Load Management in
http://onsemi.com
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
Portable Applications
Features
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages are Available*
TSOP−6
CASE 318G
STYLE 6
COLLECTOR
1, 2, 5, 6
MAXIMUM RATINGS (T = 25C)
A
Rating
Symbol
Max
30
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
3
BASE
50
V
5.0
2.0
3.0
V
4
Collector Current − Continuous
Collector Current − Peak
I
C
A
EMITTER
I
A
CM
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
(Note 1)
N2 M G
T = 25C
535
4.3
mW
mW/C
G
A
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
R
(Note 1)
C/W
q
JA
234
N2 = Specific Device Code
Total Device Dissipation
P
D
(Note 2)
M
= Date Code*
T = 25C
1.180
9.4
W
mW/C
A
G
= Pb−Free Package
Derate above 25C
(Note: Microdot may be in either location)
Thermal Resistance,
Junction−to−Ambient
R
(Note 2)
C/W
q
JA
*Date Code orientation may vary depending upon
manufacturing location.
106
Thermal Resistance,
Junction−to−Lead #1
R
R
(Note 1)
(Note 2)
110
50
C/W
C/W
q
JL
JL
q
ORDERING INFORMATION
Total Device Dissipation
(Single Pulse < 10 s)
P
W
Dsingle
†
Device
Package
Shipping
(Notes 2 and 3)
1.75
NST489AMT1
TSSOP−6
3,000 /
Tape & Reel
Junction and Storage
Temperature Range
T , T
−55 to +150
C
J
stg
NST489AMT1G
TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NSVT489AMT1G TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
2
1. FR−4 with 1 oz and 3.9 mm of copper area.
2
2. FR−4 with 1 oz and 645 mm of copper area.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3. Refer to Figure 8.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 8
NST489AMT1/D
NST489AMT1, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mA, I = 0)
V
30
50
5.0
−
−
−
−
−
−
−
−
−
V
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 0.1 mA, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage (I = 0.1 mA, I = 0)
−
V
E
C
Collector Cutoff Current (V = 30 V, I = 0)
I
CBO
0.1
0.1
0.1
mA
mA
mA
CB
E
Collector−Emitter Cutoff Current (V
= 30 V)
I
−
CES
CES
EBO
Emitter Cutoff Current (V = 4.0 V)
I
−
EB
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I = 1.0 mA, V = 5.0 V)
h
FE
300
300
200
−
500
−
−
900
−
C
CE
(I = 0.5 A, V = 5.0 V)
C
CE
(I = 1.0 A, V = 5.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 4)
(I = 1.0 A, I = 100 mA)
V
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
C
B
CE(sat)
(I = 0.5 A, I = 50 mA)
C
B
(I = 0.1 A, I = 1.0 mA)
C
B
Base−Emitter Saturation Voltage (Note 4) (I = 1.0 A, I = 0.1 A)
V
−
−
−
−
1.1
1.1
−
V
V
C
B
BE(sat)
Base−Emitter Turn−on Voltage (Note 4) (I = 1.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency (I = 100 mA, V = 5.0 V, f = 100 MHz
f
T
200
−
300
−
MHz
pF
C
CE
Output Capacitance (f = 1.0 MHz)
C
15
obo
4. Pulsed Condition: Pulse Width 300 msec, Duty Cycle 2%.
1.0
0.9
1.0
0.9
I
C
= 2 A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
= 1 A
C
I /I = 100
c
b
I /I = 10
c
b
I
C
= 500 mA
0.1
0
0.1
0
I
= 100 mA
C
0.001
0.01
I (A)
0.1
0.2
0.001
0.01
0.1
1
2
I (A)
c
b
Figure 1. VCE (sat) versus Ib
Figure 2. VCE (sat) versus Ic
800
700
1.2
1.0
V
CE
= 5 V
V
CE
= 5 V
+125C
600
500
400
300
200
+25C
−55C
+25C
0.8
0.6
0.4
−55C
+125C
0.2
0
100
0
0.001
0.01
0.1
1
2
0.001
0.01
0.1
1
2
I (A)
c
I (A)
c
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
http://onsemi.com
2
NST489AMT1, NSVT489AMT1G
1.2
1.0
10.00
3.0
I /I = 10
c
b
1.00
0.10
0.01
0.8
0.6
0.4
I /I = 100
c
b
1 ms
10 ms
100 ms
1 s
0.2
0
SINGLE PULSE T
= 25C
amb
dc
1
0.001
0.01
0.1
2
0.10
1.00
10.00
100.00
I (A)
c
V
(V)
CE(sat)
Figure 5. VBE(sat) versus Ic
Figure 6. Safe Operating Area
1000
100
10
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (sec)
Figure 8. Normalized Thermal Response
http://onsemi.com
3
NST489AMT1, NSVT489AMT1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE U
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
H
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
6
1
5
4
L2
GAUGE
PLANE
E1
E
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
2
3
L
MILLIMETERS
SEATING
M
C
NOTE 5
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
NOM
1.00
MAX
1.10
0.10
0.50
0.26
3.10
3.00
1.70
1.05
0.60
PLANE
b
DETAIL Z
e
0.06
0.38
0.18
3.00
c
2.75
A
0.05
1.50
0.95
L
0.40
A1
L2
M
0.25 BSC
−
DETAIL Z
0
10
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
0.95
3.20
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NST489AMT1/D
相关型号：
NST489AMT1G
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications
ONSEMI
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