NST3904MX2T5G [ONSEMI]
200 mA, 40 V, NPN Bipolar Transistor in SOT-883;
| 型号： | NST3904MX2T5G |
| 厂家： | 
ONSEMI |
| 描述： | 200 mA, 40 V, NPN Bipolar Transistor in SOT-883 |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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COLLECTOR
General Purpose Transistor
NPN Silicon
3
1
BASE
NST3904MX2
2
EMITTER
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
3
Compliant
1
2
MAXIMUM RATINGS
X2DFN3 (1.0 x 0.6 mm)
CASE 714AC
Rating
Symbol
Value
40
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
V
CEO
V
CBO
V
EBO
60
Vdc
Emitter−Base Voltage
6.0
Vdc
MARKING DIAGRAM
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
I
200
900
mAdc
mAdc
C
AH M
I
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AH = Specific Device Code
M
= Date Code
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Characteristic
Symbol
Max
Unit
†
Total Power Dissipation (Note 2)
P
Device
NST3904MX2T5G
Package
Shipping
D
@ T = 25°C
165
mW
A
X2DFN3
(Pb−Free)
8000 / Tape &
Reel
Derate above 25°C
1.39
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
720
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Total Power Dissipation (Note 3)
P
D
@ T = 25°C
590
4.93
mW
mW/°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 3)
R
203
°C/W
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
1. Reference SOA Curve
2
2
2. Surface−mounted on FR4 board using a 0.6 mm , 2 oz. Cu pad
3. Surface−mounted on FR4 board using a 100 mm , 2 oz. Cu pad
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2022 − Rev. 1
NST3904MX/D
NST3904MX2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)
I
BL
50
50
nAdc
nAdc
CE
EB
Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)
I
CEX
−
CE
EB
ON CHARACTERISTICS (Note 4)
DC Current Gain
H
−
FE
(I = 0.1 mAdc, V = 1.0 Vdc)
40
70
100
60
30
−
−
300
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
CE
CE
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
(I = 50 mAdc, V = 1.0 Vdc)
C
(I = 100 mAdc, V = 1.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
obo
4.0
8.0
10
CB
E
Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz)
C
ibo
−
pF
EB
C
Input Impedance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
1.0
0.5
100
1.0
−
kW
CE
C
ie
re
fe
−4
Voltage Feedback Ratio (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
8.0
400
40
X 10
−
CE
C
Small−Signal Current Gain (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
oe
mmhos
dB
CE
C
Noise Figure (V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k ohms, f = 1.0 kHz)
NF
5.0
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V = 3.0 Vdc, V = −0.5 Vdc,
CC
BE
ns
ns
I
= 10 mAdc, I = 1.0 mAdc)
C
B1
Rise Time
t
r
Storage Time
210
50
s
(V = 3.0 Vdc,
CC
I
= 10 mAdc, I = I = 1.0 mAdc)
C
B1 B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
NST3904MX2
TYPICAL CHARACTERISTICS
Turn−on
Turn−off
+3V
+3V
PW = 20us
Duty Cycle=<2%
PW = 300ns
Duty Cycle=<2%
RC = 275Ohms
RC = 275Ohms
+10.9V
0V
+10.9 V
RB = 10K Ohms
RB = 10KOhms
0V
−0.5 V
Cs<15pF*
Cs<15pF*
1N916or
equivalent
−9.1V
VCC = 3V, IC = 10mA, IB = 1mA
Forced HFE= 10
VCC = 3V, IC = 10mA
IB1 = 1mA, IB2 = −1mA
Forced HFE = 10
* Total shunt capacitance of test jig and conne. ctors
* Total shunt capacitance of test jig and conne. ctors
Figure 1. Delay and Rise Time Equivalent Test
Circuit
Figure 2. Storage and Fall Time Equivalent
Test Circuit
10
1000
I /I = 10
C
B
V
CC
= 40 V
C
ibo
V
CC
= 20 V
V
CC
= 5 V
C
100
10
1
obo
0.1
0.1
1
10
60
1
10
100
REVERSE BIAS VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Turn−On Time
1000
1000
I /I = 10
t′ = t − 1/8 x t
C
B
s
s
= I
f
I
B1
B2
V
CC
= 40 V
I /I = 10
C
B
V
CC
= 40 V
V
CC
= 5 V
V
CC
= 20 V
100
10
100
10
V
CC
= 20 V
V
CC
= 5 V
1
10
100
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Rise Time
Figure 6. Storage Time
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3
NST3904MX2
TYPICAL CHARACTERISTICS
1000
1000
I
B1
= I
B2
V
CC
= 1 V
V
CC
= 40 V
T = 150°C
A
T = 25°C
A
V
CC
= 20 V
T = −55°C
A
100
10
100
10
V
CC
= 5 V
1
10
100
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Fall Time
Figure 8. DC Current Gain
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
= 100 mA
I
C
= 200 mA
C
V
CC
= 10 V
T = 150°C
A
T = 25°C
A
T = −55°C
A
100
10
I
C
= 10 mA
0.2
0.1
0
I
= 1 mA
C
0.1
1
10
100
0.001
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region
0.35
1.2
1.0
0.8
0.6
0.4
I /I = 10
I /I = 10
T = 25°C
A
C
B
C
B
0.30
0.25
0.20
0.15
0.10
T = 25°C
A
0.2
0
0.05
0
0.001
0.01
I , COLLECTOR CURRENT (A)
0.1
0.001
0.01
I , COLLECTOR CURRENT (A)
0.1
C
C
Figure 11. Collector−Emitter Saturation
Figure 12. Base−Emitter Saturation Voltage vs.
Voltage vs. Collector Current
Collector Current
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4
NST3904MX2
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
1000
I
B
= 5.0 mA
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
100
1.0 mA
0.5 mA
10
1
60
40
V
CE
= 2 V
T = 25°C
A
20
0
0
0.5
1.0
1.5
2.0
2.5
1
10
I , COLLECTOR CURRENT (mA)
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
C
Figure 13. Collector Current vs.
Figure 14. Current Gain Bandwidth vs.
Collector Current
Collector−Emitter Voltage
1
1 ms
Thermal Limit
10 ms
100 ms
1 s
0.1
0.01
0.001
0.01
0.1
1
10
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Safe Operating Area
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5
NST3904MX2
PACKAGE DIMENSIONS
X2DFN3 1.0x0.6, 0.35P
CASE 714AC
ISSUE A
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