NSR07540SLT1G [ONSEMI]
肖特基势垒二极管/整流器 40V 0.75A，采用 SOT-23 封装;
| 型号： | NSR07540SLT1G |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒二极管/整流器 40V 0.75A，采用 SOT-23 封装 二极管 |
| 文件： | 总7页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes
NSR07540SL
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
40 VOLTS SCHOTTKY
BARRIER DIODES
• High Frequency Propoerties and Switching Speed
• Very Low Forward Voltage
• Guard Ring for Overvoltage Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
3
CATHODE
1
ANODE
Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
3
A
Rating
Symbol
Value
1.5
Unit
A
1
Forward Current
I
F
2
SOT−23 (TO−236)
CASE 318
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
I
8.0
A
FSM
STYLE 8
Reverse Voltage
V
R
40
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
LAMG
G
1
LA Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
NSR07540SLT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020 − Rev. 0
NSR07540SL/D
NSR07540SL
THERMAL CHARACTERISTICS
Characteristic
Symbol
PD
Min
Typ
Max
Unit
Forward Power Dissipation
@ T = 25°C
350
3.5
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
R
286
°C/W
°C
q
JA
T
−55 to +125
−65 to +150
J
T
°C
stg
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.000001 0.00001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR07540SL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
40
−
Typ
−
Max
−
Unit
Reverse Breakdown Voltage
V
(BR)R
V
(I = 0.25 mA)
R
Total Capacitance
(V = 0 V, f = 1.0 MHz)
C
pF
T
170
−
R
Reverse Leakage
I
R
mA
(V = 40 V)
(V = 40 V @ 125°C)
R
−
−
0.02
10
0.1
−
R
Forward Voltage
V
F
mV
(I = 50 mA)
−
−
−
−
−
−
−
300
330
400
430
460
535
375
−
−
−
480
−
−
F
(I = 100 mA)
F
(I = 500 mA)
F
(I = 750 mA)
F
(I = 1.0 A)
F
(I = 1.5 A)
F
(I = 750 mA @ 125°C)
F
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 3. Recovery Time Equivalent Test Circuit
I
F
V
F
t
r
V
FRM
V
F
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR07540SL
TYPICAL CHARACTERISTICS
10
1
T = 125°C
J
1000
75°C
25°C
0.1
100
10
0.01
0.001
0.0001
T = 125°C
J
75°C
0.2
25°C
0
0.1
0.3
0.4
0.5
0
5
10
15
20
25
30
35
40
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Voltage
Figure 6. Leakage Current
1000
100
1
0.1
DC = 1.0
DC = 1.0
0.8
0.5
0.2
0.1
0.01
10
1
0.2 0.5
0.8
0.1
0.001
0.0001
0.1
0
200
400
600
800 1000 1200 14001500
0
5
10
15
20
25
30
35
40
I , FORWARD CURRENT (mA)
F
V , REVERSE VOLTAGE (V)
R
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
180
160
140
f = 1.0 MHz
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
V , REVERSE VOLTAGE (V)
R
Figure 9. Total Capacitance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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