NSR02301MX4T5G [ONSEMI]
200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005);
| 型号： | NSR02301MX4T5G |
| 厂家： | 
ONSEMI |
| 描述： | 200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005) 二极管 |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Trench-based Schottky
Diode, 200 mA, 30 V
NSR02301MX4
These Trench Schottky diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in space saving
micro−packaging ideal for space constrained applications.
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Features
1
2
• Small Body Outline Dimensions
♦ 01005 Size: 0.445 mm x 0.24 mm
• 200 mA Continuous Forward Current
CATHODE
ANODE
• Low Forward Voltage Drop − 350 mV (Typical) @ I = 100 mA
F
MARKING
DIAGRAM
• Low Reverse Current − 25 mA (Typical) @ V = 30 V
R
• Very Low t − 11 ns Maximum
rr
X4DFN2
CASE 718AA
EM
• Low Capacitance − 19 pF Typical
Typical Applications
E = Specific Device Code
M = Date Code
• Mobile and Wearable Devices
• Camera Photo Flash
• Buck and Boost DC−DC Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
ORDERING INFORMATION
Device
Package
Shipping†
NSR02301MX4T5G X4DFN2
10000 /
(Pb−Free)
Tape & Reel
MAXIMUM RATINGS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Rating
Forward Current (DC)
Symbol
Value
200
30
Unit
mA
V
I
F
Reverse Voltage
V
R
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
1.0
A
FRM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
October, 2020 − Rev. 1
NSR02301/D
NSR02301MX4
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
614.9
203
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Thermal Resistance
Junction−to−Ambient (Note 2)
R
239.4
522
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Junction Temperature Range
T
−55 to +125
−55 to +150
260
°C
°C
°C
J
Storage Temperature Range
T
STG
Lead Solder Temperature − Maximum (10 seconds)
T
L
2
2
2
1. Mounted onto a 4 in FR−4 board 10 mm 1 oz. Cu 0.06’ thick single−sided. Operating to steady state.
2
2. Mounted onto a 4 in FR−4 board 2 cm 1 oz. Cu 0.06’ thick single−sided. Operating to steady state.
1000
D = 0.5
0.2
100
0.1
0.05
0.02
0.01
10
1
Single Pulse
0.1
0.01
0.00000001 0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
0.2
100
0.1
0.05
0.02
0.01
10
1
Single Pulse
0.1
0.01
0.00000001 0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 2. Thermal Response (Note 2)
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2
NSR02301MX4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 10 V)
15
25
50
100
R
(V = 30 V)
R
Forward Voltage
V
F
mV
(I = 50 mA)
300
350
420
440
480
540
F
(I = 100 mA)
F
(I = 200 mA)
F
Total Capacitance
C
19
pF
ns
T
(V = 5.0 V, f = 1 MHz)
R
Reverse Recovery Time
t
rr
9.4
11
(I = I = 10 mA, I = 1.0 mA)
F
R
R(REC)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
200
100
125°C
125°C
85°C
85°C
25°C
25°C
0°C
0°C
10
1
−55°C
−55°C
0.3
0.0
0.1
0.2
0.4
0.5
0.6
0
5
10
15
20
25
30
35
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 3. Forward Voltage
Figure 4. Leakage Current
60
50
40
30
20
T = 25°C
A
f = 1 MHz
10
0
0
5
10
15
20
25
30
35
V , REVERSE VOLTAGE (V)
R
Figure 5. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X4DFN2, 0.445x0.24, 0.27P
CASE 718AA
ISSUE A
DATE 21 MAR 2017
SCALE 10:1
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
MILLIMETERS
PIN 1
REFERENCE
DIM MIN
NOM MAX
E
A
A1
b
D
E
e
0.15
−−−
0.18
0.21
0.03
TOP VIEW
−−−
0.170 0.185 0.200
0.415 0.445 0.475
0.210 0.240 0.270
0.270 BSC
A
0.03
0.03
C
C
L
0.105 0.120 0.135
A1
SEATING
PLANE
GENERIC
MARKING DIAGRAMS*
C
SIDE VIEW
X
X
e
e/2
2X b
2
X
= Specific Device Code
PIN 1
2X L
*This information is generic. Please refer to
device data sheet for actual part marking.
Some products may not follow the Generic
Marking.
0.10 C A B
NOTE 3
0.05 C
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
2X
0.21
0.27
PITCH
1
2X
0.13
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON29067G
X4DFN2, 0.445X0.24, 0.27P
PAGE 1 OF 1
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