NSR0115CQP6T5G [ONSEMI]
100 mA, 15 V, Schottky Diode, Dual Common Cathode;
| 型号： | NSR0115CQP6T5G |
| 厂家： | 
ONSEMI |
| 描述： | 100 mA, 15 V, Schottky Diode, Dual Common Cathode |
| 文件： | 总5页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSR0115CQP6T5G
Two Dual 15 V, 0.1 A
Common Cathode Schottky
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Industry leading smallest
surface mount package is excellent for hand−held and portable
applications where space is limited.
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MARKING
DIAGRAM
Features
• Extremely Fast Switching Speed
SOT−963
CASE 527AD
XM M
1
• Low Forward Voltage − 0.4 V (Max) @ I = 10 mA
F
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
XM
M
= Specific Device Code
= Month Code
Compliant
Typical Applications
• Portable Devices (Digital Cameras, MP3 Players … etc)
• Mobile Phones
PIN CONFIGURATION
• Keyboards
• Low Voltage Motor Control (Disc Drives)
Pin 4
Pin 3
Pin 2
Pin 1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Pin 5
Pin 6
Rating
Reverse Voltage
Symbol
Value
15
Unit
V
V
R
Forward Current (DC)
I
100
0.3
mA
A
F
Repetitive Peak Forward Current
I
FRM
Non−Repetitive Peak Forward
Current (t < 1.0 s)
I
2.0
A
FSM
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
Package
Shipping
NSR0115CQP6T5G SOT−963
(Pb−Free)
8000 / Tape &
Reel
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Rating
Symbol
Max
Unit
Total Device Dissipation
P
D
260
mW
T
A
= 25°C
(Note 1)
Derate above 25°C
2.1
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
R
480
q
JA
(Note 1)
Total Device Dissipation
P
360
mW
D
T
= 25°C
(Note 2)
A
Derate above 25°C
2.9
mW/°C
°C/W
Thermal Resistance, Junction to
Ambient
R
347
q
JA
(Note 2)
Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
2
1. FR−4 @ 10 mm , 1 oz. copper trace, still air.
2
2. FR−4 @ 100 mm , 1 oz. copper trace, still air.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 0
NSR0115CQP6/D
NSR0115CQP6T5G
ELECTRICAL CHARACTERISTICS (T = 25°C, Single Diode)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I = 20 mA)
V
15
−
−
Vdc
pF
uA
V
R
(BR)R
Total Capacitance (V = 1.0 V, f = 1.0 MHz)
C
8.0
15
R
T
Reverse Leakage (V = 10 V)
I
R
−
R
Forward Voltage (I = 10 mA)
V
V
0.18
0.4
5.0
F
F
Forward Voltage (I = 10 mA)
−
−
V
F
F
Reverse Recovery Time
t
rr
ns
(I = I = 10 mA, I = 1.0 mA, Figure 1)
F
R
R(REC)
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR0115CQP6T5G
100
10
10k
1k
125°C
150°C
100
10
85°C
150°C
125°C
85°C
1
1
25°C
0.1
−40°C
0.1
0.01
25°C
0.01
0.001
0.0001
−40°C
−55°C
0.4
−55°C
0
0.1
0.2
0.3
0.5
0.6
0
2
4
6
8
10
12
14
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
15
14
13
12
11
10
9
T
A
= 25°C
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
V , REVERSE VOLTAGE (V)
R
Figure 4. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE E
DATE 09 FEB 2010
SCALE 4:1
NOTES:
D
X
Y
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
6
5
4
3
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
HE
0.95
0.05
1.05
0.15
L
L2
GENERIC
MARKING DIAGRAM*
6X
b
6X
L2
0.08
X Y
XM
1
BOTTOM VIEW
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
STYLE 2:
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
X
M
= Specific Device Code
= Month Code
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
*This information is generic. Please refer
to device data sheet for actual part
marking.
6. COLLECTOR 1
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. CATHODE
2. ANODE
Pb−Free indicator, “G” or microdot “ G”,
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
PIN 1. CATHODE
2. CATHODE
3. ANODE
may or may not be present.
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
RECOMMENDED
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. ANODE
5. CATHODE
6. CATHODE
MOUNTING FOOTPRINT
6X
0.35
6X
0.20
STYLE 7:
PIN 1. CATHODE
2. ANODE
STYLE 8:
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
PIN 1. DRAIN
2. DRAIN
3. GATE
3. CATHODE
4. CATHODE
5. ANODE
3. DRAIN 2
4. SOURCE 2
5. GATE 2
PACKAGE
OUTLINE
4. SOURCE
5. DRAIN
6. DRAIN
1.20
6. CATHODE
6. DRAIN 1
STYLE 10:
PIN 1. CATHODE 1
2. N/C
0.35
PITCH
3. CATHODE 2
4. ANODE 2
5. N/C
DIMENSIONS: MILLIMETERS
6. ANODE 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26456D
SOT−963, 1X1, 0.35P
PAGE 1 OF 1
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