NSBC114EPDXV6T5 [ONSEMI]
Dual Bias Resistor Transistors; 双偏置电阻晶体管
| 型号： | NSBC114EPDXV6T5 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Bias Resistor Transistors |
| 文件： | 总14页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSBC114EPDXV6T1,
NSBC114EPDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
(3)
(2)
(1)
R
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
4
5
6
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free Solder Plating
3
2
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q
A
1
and Q , − minus sign for Q (PNP) omitted)
2
1
Rating
Symbol
Value
50
Unit
xx D
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
CBO
V
CEO
Vdc
Vdc
50
xx = Specific Device Code
(see table on page 2)
I
C
100
mAdc
THERMAL CHARACTERISTICS
D
= Date Code
Characteristic
(One Junction Heated)
Symbol
Max
Unit
ORDERING INFORMATION
Total Device Dissipation
T = 25°C
P
D
357
(Note 1)
2.9
mW
A
Device
Package
Shipping
Derate above 25°C
mW/°C
°C/W
(Note 1)
NSBC114EPDXV6T1 SOT−563
4 mm pitch
4000/Tape & Reel
Thermal Resistance Junction-to-Ambient
R
350
q
JA
(Note 1)
NSBC114EPDXV6T5 SOT−563
2 mm pitch
8000/Tape & Reel
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
P
500
(Note 1)
4.0
mW
A
D
DEVICE MARKING INFORMATION
Derate above 25°C
mW/°C
°C/W
°C
See specific marking information in the device marking table
on page 2 of this data sheet.
(Note 1)
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
R
250
(Note 1)
q
JA
Preferred devices are recommended choices for future use
and best overall value.
T , T
J
−55 to
+150
stg
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. 3
NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDXV6T1
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
11
R1 (kW)
10
R2 (kW)
10
NSBC124EPDXV6T1
12
22
22
NSBC144EPDXV6T1
13
47
47
NSBC114YPDXV6T1
14
10
47
NSBC114TPDXV6T1 (Note 2)
NSBC143TPDXV6T1 (Note 2)
NSBC113EPDXV6T1 (Note 2)
NSBC123EPDXV6T1 (Note 2)
NSBC143EPDXV6T1 (Note 2)
NSBC143ZPDXV6T1 (Note 2)
NSBC124XPDXV6T1 (Note 2)
NSBC123JPDXV6T1 (Note 2)
15
10
∞
16
4.7
1.0
2.2
4.7
4.7
22
∞
30
1.0
2.2
4.7
47
31
32
33
34
47
35
2.2
47
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q (PNP) omitted)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3) (I = 2.0 mA, I = 0)
C
B
(BR)CEO
ON CHARACTERISTICS (Note 3)
DC Current Gain
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
15
CE
C
80
160
160
3.0
8.0
15
80
80
30
200
150
140
80
Collector-Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
−
−
0.25
Vdc
CE(sat)
C
B
(I = 10 mA, I = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1
C
B
(I = 10 mA, I = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1
C
B
NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
2
NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q (PNP) omitted)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
V
OL
Vdc
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
NSBC144EPDXV6T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
Output Voltage (off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
NSBC113EPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC143ZPDXV6T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
CC
B
L
Input Resistor
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k W
15.4
1.54
28.6
2.86
2.2
Resistor Ratio
R1/R2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1
NSBC143ZPDXV6T1
0.8
1.0
0.1
0.47
0.047
1.2
0.055
0.38
0.038
0.185
0.56
0.056
NSBC124XPDXV6T1
NSBC123JPDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
NSBC114EPDXV6T1, NSBC114EPDXV6T5
300
250
200
150
100
R
= 490°C/W
50
0
q
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
4
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
1
1000
I /I = 10
C B
V
CE
= 10 V
T ꢀ=ꢀ−25°C
A
25°C
T ꢀ=ꢀ75°C
A
25°C
0.1
−25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ−25°C
A
T = 25°C
A
1
0.1
2
1
0.01
0.001
V
O
= 5 V
9
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
T ꢀ=ꢀ−25°C
A
25°C
−25°C
ꢁ0.1
100
25°C
75°C
ꢁ0.01
10
ꢁ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢁ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢀ=ꢀ−25°C
A
T = 25°C
A
2
1
ꢁ0.1
ꢁ0.01
V
O
= 5 V
0
0
ꢁ0.001
10
20
30
40
50
0
1
ꢁ2
3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
10
25°C
75°C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
25°C
T ꢀ=ꢀ−25°C
A
0.1
−25°C
75°C
100
0.01
10
0.001
1
10
I , COLLECTOR CURRENT (mA)
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
3
2
1
100
10
1
75°C
25°C
f = 1 MHz
T ꢀ=ꢀ−25°C
A
I = 0 V
E
T = 25°C
A
0.1
0.01
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output
Current
http://onsemi.com
7
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
1
25°C
75°C
25°C
T ꢀ=ꢀ−25°C
A
−25°C
100
ꢁ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢁ20
I , COLLECTOR CURRENT (mA)
ꢁ40
ꢁ50
100
C
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢀ=ꢀ−25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢁ0.1
1
0
ꢁ0.01
V
O
= 5 V
ꢁ9
ꢁ0.001
0
1
ꢁ2
ꢁ3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
10
25°C
75°C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢀ=ꢀ−25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
75°C
I = 0 V
E
T ꢀ=ꢀ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
http://onsemi.com
9
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR
1
1000
I /I = 10
C B
T ꢀ=ꢀ75°C
A
T ꢀ=ꢀ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢁ0.1
ꢁ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
100
25°C
−25°C
T ꢀ=ꢀ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢁ0.1
ꢁ0.01
0.2
0
V
= 5 V
ꢁ5
O
ꢁ0.001
0
10
20
30
40
50
0
1
2
3
ꢁ4
ꢁ6
ꢁ7
ꢁ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
ꢀ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
http://onsemi.com
10
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR
1
300
T ꢀ=ꢀ75°C
A
V
CE
= 10
I /I = 10
C B
T ꢀ=ꢀ−25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
−25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
T ꢀ=ꢀ75°C
25°C
A
l = 0 V
E
T = 25°C
A
−25°C
2.5
2
1.5
1
V
O
= 5 V
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢀ=ꢀ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
http://onsemi.com
11
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR
1
180
T ꢀ=ꢀ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢀ=ꢀ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5
4
100
10
1
T ꢀ=ꢀ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
V
O
= 5 V
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
V
O
= 0.2 V
25°C
T ꢀ=ꢀ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
http://onsemi.com
12
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
1000
1000
T = 25°C
A
T = 25°C
A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 5.0 V
V
CE
= 5.0 V
100
100
1.0
10
100
1.0
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 42. DC Current Gain − PNP
Figure 43. DC Current Gain − NPN
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
1000
1000
T = 25°C
A
T = 25°C
A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 5.0 V
V
CE
= 5.0 V
100
100
1.0
10
I , COLLECTOR CURRENT (mA)
100
1.0
10
I , COLLECTOR CURRENT (mA)
100
C
C
Figure 44. DC Current Gain − PNP
Figure 45. DC Current Gain − NPN
http://onsemi.com
13
NSBC114EPDXV6T1, NSBC114EPDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
C
−X−
K
6
5
2
4
3
MILLIMETERS
DIM MIN MAX
INCHES
B
−Y−
MIN
MAX
0.067
0.051
0.024
0.011
S
A
B
C
D
G
J
1.50
1.10
0.50
0.17
1.70 0.059
1.30 0.043
0.60 0.020
0.27 0.007
1
0.50 BSC
0.020 BSC
D 56 PL
J
0.08
0.10
1.50
0.18 0.003
0.30 0.004
1.70 0.059
0.007
0.012
0.067
G
M
0.08 (0.003)
X Y
K
S
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
STYLE 2:
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
STYLE 4:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. COLLECTOR 1
6. ANODE/ANODE 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5 0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NSBC114EPDXV6/D
相关型号：
©2020 ICPDF网 联系我们和版权申明