NRVTS360ETFSWFTAG [ONSEMI]
沟槽肖特基整流器，极低漏，60V，3A;
| 型号： | NRVTS360ETFSWFTAG |
| 厂家： | 
ONSEMI |
| 描述： | 沟槽肖特基整流器，极低漏，60V，3A 超快软恢复二极管 快速软恢复二极管 测试 光电二极管 |
| 文件： | 总6页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NRVTS360ETFS
Trench Surface Mount
Schottky Rectifier
This m8FL flat lead ultrafast rectifier provides fast switching
performance with soft recovery in a compact thermally efficient
package. Its compact footprint makes it ideally suited to portable and
automotive applications where board space is at a premium. Its low
profile makes it a good option for flat panel display and other
applications with limited vertical clearance. The device offers low
leakage over temperature making it a good match for applications
requiring low quiescent current.
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TRENCH SCHOTTKY
RECTIFIER 3.0 AMPERE
60 VOLTS
Features
• Fast Soft Switching for Reduced EMI and Higher Efficiency
• Low Profile − Maximum Height of 1.1 mm
1
2
• Small Footprint − Footprint Area of 13.5 mm
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• WF in Suffix of Part Number Denotes Wettable Flanks Option for
Enhanced Automated Inspection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
1
A
A
A
C
C
C
C
T360
AYWWG
G
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
NC
• Weight: 95 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
T360
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
• MSL 1
Applications
(Note: Microdot may be in either location)
• Switching Power Supplies including Mini−adapters and Displays
• Instrumentation
• Engine Control Recirculation Diodes
• Freewheeling Diode Where Space is at a Premium
• Automotive LED Lighting
ORDERING INFORMATION
†
Device
Package
Shipping
NRVTS360ETFSTAG
1500 / Tape
& Reel
WDFN8
(Pb−Free)
NRVTS360ETFSWFTAG
1500 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
February, 2019 − Rev. 2
NRVTS360ETFS/D
NRVTS360ETFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
60
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
O
(T = 163°C)
3.0
6.0
L
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 166°C
R
L
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50
Storage Temperature Range
T
−65 to +175
−65 to +175
°C
°C
stg
Operating Junction Temperature
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Tab (Note 1)
Symbol
Value
2.7
Unit
°C/W
°C/W
Y
JCT
Thermal Resistance, Junction−to−Ambient (Note 1)
R
57.7
q
JA
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 3.0 Amps, T = 25°C)
0.60
0.75
0.70
0.90
F
J
(i = 6.0 Amps, T = 25°C)
F
J
(i = 3.0 Amps, T = 125°C)
0.57
0.69
0.65
0.77
F
J
(i = 6.0 Amps, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
1.0
0.8
12
4.0
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRVTS360ETFS
TYPICAL CHARACTERISTICS
100
10
100
10
T = 175°C
A
T = 150°C
A
T = 175°C
A
T = 125°C
A
T = 150°C
A
1
1
T = 85°C
A
T = 85°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
T = −55°C
A
A
0.1
0.0
0.1
0.2
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−01
1.E−02
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 125°C
A
T = 150°C
A
1.E−03
1.E−04
1.E−05
T = 125°C
A
T = 85°C
A
T = 85°C
A
1.E−05
T = 25°C
A
1.E−06
1.E−07
1.E−06
1.E−07
T = 25°C
A
5
10 15 20 25 30 35 40 45 50 55 60
5
10 15 20 25 30 35 40 45 50 55 60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
6
5
4
3
1000
T = 25°C
J
R
= 4.0°C/W
q
JC
DC
SQUARE WAVE
100
10
2
1
0
0.1
1
10
120
130
140
150
160
170
180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
NRVTS360ETFS
TYPICAL CHARACTERISTICS
14
12
10
8
I /I = 20
PK AV
I /I = 10
PK AV
6
SQUARE WAVE
DC
4
2
I
/I = 5
PK AV
0
0
1
2
3
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
10
50% (DUTY CYCLE)
20%
10%
1
5.0%
2.0%
1.0%
2
Assumes 25°C ambient and soldered to a 650 mm - 1 oz copper pad on PCB
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 8. Typical Thermal Characteristics
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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