NRVHPM260T3G [ONSEMI]

Rectifier, Ultrafast 2 A 600 V;
NRVHPM260T3G
型号: NRVHPM260T3G
厂家: ONSEMI    ONSEMI
描述:

Rectifier, Ultrafast 2 A 600 V

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NHPM260T3G,  
NRVHPM260T3G  
Surface Mount  
Ultra Fast Power Rectifier  
POWERMITE®  
Power Surface Mount Package  
www.onsemi.com  
®
The ultrafast Powermite provides soft recovery fast switching  
ULTRA FAST  
RECTIFIER  
2.0 AMPERES, 600 VOLTS  
performance in a compact thermally efficient package. The advanced  
packaging techniques provide for a very efficient micro−miniature  
space−saving surface mount rectifier. With its unique heatsink design,  
®
the Powermite offers thermal performance similar to the SMA while  
being 50% smaller in footprint area.  
CATHODE  
Features  
Fast Soft Switching for Reduced EMI and Higher Efficiency  
Low Profile − Maximum Height of 1.1 mm  
ANODE  
2
POWERMITE  
CASE 457  
Small Footprint − Footprint Area of 8.45 mm  
Supplied in 12 mm Tape and Reel  
Low Thermal Resistance with Direct Thermal Path of Die on  
Exposed Cathode Heat Sink  
MARKING DIAGRAM  
These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
M
P26G  
Mechanical Characteristics:  
1
2
®
Powermite is JEDEC Registered as D0−216AA  
Case: Molded Epoxy  
M
= Date Code  
P26 = Device Code  
Epoxy Meets UL 94 V−0 @ 0.125 in  
Weight: 16.3 mg (Approximately)  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Maximum for 10 Seconds  
G
= Pb−Free Package  
MSL 1  
ORDERING INFORMATION  
Device  
NHPM260T3G  
Package  
Shipping  
Applications  
Powermite 12000/Tape & Reel  
(Pb−Free)  
Automotive HID Lighting  
Diesel Piezo Injection  
Power Factor Correction in Mini Adapters  
Freewheeling Diode Where Space is at a Premium  
NRVHPM260T3G Powermite 12000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2015 − Rev. 2  
NHPM260/D  
NHPM260T3G, NRVHPM260T3G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
V
RWM  
V
R
Average Rectified Forward Current  
(T = 145°C)  
L
I
2.0  
4.0  
A
A
O
Peak Repetitive Forward Current  
I
FRM  
(Square Wave, 20 kHz, T = 125°C)  
L
Non−Repetitive Peak Surge Current  
I
15  
A
FSM  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
Storage and Operating Junction Temperature Range (Note 1)  
T
stg  
, T  
J
−65 to +175  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R  
.
q
D
J
JA  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
8.5  
Unit  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Lead (Note 2)  
Thermal Resistance, Junction−to−Ambient (Note 2)  
Thermal Resistance, Junction−to−Ambient (Note 3)  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Y
JCL  
R
82.9  
260  
q
q
JA  
JA  
R
Test Conditions  
Symbol  
Typ  
Max  
Unit  
(I = 2 A, T = 125°C)  
V
F
2.1  
3.0  
2.6  
3.8  
V
Instantaneous Forward Voltage (Note 4)  
F
C
(I = 2 A, T = 25°C)  
F
C
Instantaneous Reverse Current (Note 4)  
(Rated DC Voltage, T = 125°C)  
I
R
5.0  
0.002  
50  
0.5  
mA  
C
(Rated DC Voltage, T = 25°C)  
C
Reverse Recovery Time  
Peak Reverse Recovery Current  
Total Reverse Recovery Charge  
Softness Factor  
(I = 2 A, d /d = −200 A/ms, T = 25°C)  
t
15  
0.5  
2.1  
0.8  
30  
3.0  
10  
ns  
A
nC  
F
IF  
t
C
rr  
I
RM  
Q
S
rr  
3.0  
Reverse Recovery Time  
Peak Reverse Recovery Current  
Total Reverse Recovery Charge  
Softness Factor  
(I = 2 A, d /d = −200 A/ms, T = 125°C)  
t
rr  
RM  
30  
0.7  
12  
ns  
A
nC  
F
IF  
t
C
I
Q
rr  
S
2.4  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2
2
2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board.  
2
3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board.  
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NHPM260T3G, NRVHPM260T3G  
TYPICAL CHARACTERISTICS  
100  
10  
100  
T = 175°C  
A
T = 175°C  
A
T = 150°C  
A
10  
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
1
1
T = 25°C  
A
T = 25°C  
A
T = −40°C  
T = −40°C  
A
A
0.1  
0.1  
0
0.5  
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
0
0
0
0.5  
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
F
Figure 1. Typical Instantaneous Forward  
Characteristics  
Figure 2. Maximum Instantaneous Forward  
Characteristics  
1E−03  
1E−04  
1E−05  
1E−06  
1E−07  
1E−03  
1E−04  
1E−05  
1E−06  
1E−07  
1E−08  
1E−09  
T = 175°C  
A
T = 175°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
T = 150°C  
A
T = 25°C  
A
T = 25°C  
A
T = −40°C  
A
T = −40°C  
A
1E−08  
1E−09  
1E−10  
1E−11  
0
100  
200  
300  
400  
500  
600  
100  
200  
300  
400  
500  
600  
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 3. Typical Reverse Characteristics  
Figure 4. Maximum Reverse Characteristics  
1000  
100  
5
T = 25°C  
J
4
3
2
DC  
Square  
Wave  
10  
1
1
0
R
= 8.5°C/W  
q
JC  
0
20 40 60 80 100 120 140 160 180 200  
20  
40  
60  
80 100 120 140 160 180  
V , REVERSE VOLTAGE (V)  
R
T , CASE TEMPERATURE (°C)  
C
Figure 5. Typical Junction Capacitance  
Figure 6. Current Derating  
www.onsemi.com  
3
NHPM260T3G, NRVHPM260T3G  
TYPICAL CHARACTERISTICS  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
I /I = 20  
PK AV  
I
/I = 10  
PK AV  
I
/I = 5  
PK AV  
Square  
Wave  
DC  
0.5  
0
T = 175°C  
J
0
0.5  
1.0  
1.5  
2.0  
I , AVERAGE FORWARD CURRENT (A)  
F(AV)  
Figure 7. Forward Power Dissipation  
1000  
100  
50% (DUTY CYCLE)  
25%  
10%  
5.0%  
2.0%  
10  
1.0%  
1.0  
0.1  
SINGLE PULSE  
0.01  
0.000001 0.00001  
0.0001  
0.001  
0.01  
PULSE TIME (s)  
0.1  
1.0  
10  
100  
1000  
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)  
100  
10  
50% (DUTY CYCLE)  
25%  
10%  
5.0%  
2.0%  
1.0%  
1.0  
0.1  
SINGLE PULSE  
0.01  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
PULSE TIME (s)  
0.1  
1.0  
10  
100  
1000  
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)  
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
POWERMITE  
CASE 457  
ISSUE G  
DATE 12 JAN 2022  
SCALE 4:1  
GENERIC  
MARKING DIAGRAMS*  
M
XXXG  
M
XXXG  
1
2
1
2
STYLE 1:  
STYLE 2:  
STYLE 3:  
PIN 1. ANODE  
2. CATHODE  
PIN 1. CATHODE  
PIN 1. ANODE OR CATHODE  
2. CATHODE OR ANODE  
(BIDIRECTIONAL)  
STYLE 1  
STYLE 2  
2. ANODE  
M
XXXG  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
1
2
XXX = Specific Device Code  
M
= Date Code  
STYLE 3  
G
= PbFree Package  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB14853C  
POWERMITE  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
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