NRVHP820LFST1G [ONSEMI]

8 A, 200 V Planar Ultrafast Rectifier in LFPAK package;
NRVHP820LFST1G
型号: NRVHP820LFST1G
厂家: ONSEMI    ONSEMI
描述:

8 A, 200 V Planar Ultrafast Rectifier in LFPAK package

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Switch-mode  
Power Rectifiers  
NHP820LFS, NRVHP820LFS  
This LFPAK ultrafast rectifier provides fast switching performance  
with soft recovery in a compact thermally efficient package. The  
LFPAK package provides an excellent alternative to the DPAK,  
offering thermal performance nearly as good in a package occupying  
less than half the board space. Its low profile makes it a good option  
for flat panel display and other applications with limited vertical  
clearance. The device offers low leakage over temperature making it a  
good match for applications requiring low quiescent current.  
www.onsemi.com  
ULTRAFAST RECTIFIERS  
8 AMPERES  
200 VOLTS  
Features  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
Excellent Ability to Absorb Stresses Associated with Power  
Temperature Cycling  
5
1,2,3,4  
MARKING  
DIAGRAM  
C
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
HP820L  
AWLYW  
LFPAK4  
CASE 760AB  
1
A
A
A
A
Mechanical Characteristics:  
HP820L  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
Case: Epoxy, Molded  
A
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.  
WL  
Y
= Year  
Lead Finish: 100% Matte Sn (Tin)  
W
= Work Week  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
Applications  
Device  
Package  
Shipping†  
Excellent Alternative to DPAK in SpaceConstrained Automotive  
Applications  
NHP820LFST1G  
LFPAK4  
(PbFree) Tape & Reel  
3000 /  
Very Low Leakage for Higher Temperature Operation  
Output Rectification in Compact Portable Consumer Applications  
Freewheeling Diode used with Inductive Loads  
NRVHP820LFST1G  
LFPAK4 3000 /  
(PbFree) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2019 Rev. 1  
NHP820LFS/D  
NHP820LFS, NRVHP820LFS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
R
V
V
200  
8.0  
Average Rectified Forward Current  
I
A
A
A
F(AV)  
(Rated V , T = 168°C)  
R
C
Peak Repetitive Forward Current,  
I
16  
FRM  
(Rated V , Square Wave, 20 kHz, T = 158°C)  
R
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
I
175  
FSM  
Storage Temperature Range  
T
65 to +175  
°C  
°C  
stg  
Operating Junction Temperature  
T
55 to +175  
J
ESD Rating (Human Body Model)  
3B  
C5  
50  
ESD Rating (Machine Model)  
Controlled Avalanche Energy (See Test Circuit in Figures 9 & 10)  
W
AVAL  
mJ  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoAmbient, Steady State  
(Assumes 645 mm 2 oz. copper bond pad, on a FR4 board)  
R
44  
°C/W  
θ
JA  
2
Thermal Resistance, JunctiontoCase, Steady State  
(Assumes 645 mm 2 oz. copper bond pad, on a FR4 board)  
R
1.07  
°C/W  
θ
JC  
2
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Instantaneous Forward Voltage (Note 1)  
v
V
F
(i = 8 A, T = 125°C)  
0.88  
1.00  
F
J
(i = 8 A, T = 25°C)  
F
J
Instantaneous Reverse Current (Note 1)  
i
R
mA  
(Rated dc Voltage, T = 125°C)  
100  
1.0  
J
(Rated dc Voltage, T = 25°C)  
J
Maximum Reverse Recovery Time  
T
rr  
35  
ns  
(I = 1.0 A, di/dt = 50 A/ms, V = 30 V)  
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NHP820LFS, NRVHP820LFS  
TYPICAL CHARACTERISTICS  
100  
10  
1
100  
10  
1
T = 175°C  
A
T = 175°C  
A
T = 150°C  
T = 150°C  
A
A
T = 125°C  
A
T = 125°C  
A
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = 55°C  
T = 55°C  
A
A
0.1  
0.0  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Figure 1. Typical Instantaneous Forward  
Characteristics  
Figure 2. Maximum Instantaneous Forward  
Characteristics  
1.E03  
1.E04  
1.E05  
1.E06  
1.E07  
1.E08  
1.E09  
1.E10  
1.E11  
1.E12  
1.E01  
1.E02  
1.E03  
1.E04  
1.E05  
1.E06  
1.E07  
1.E08  
1.E09  
T = 175°C  
A
T = 175°C  
A
T = 150°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = 55°C  
A
T = 55°C  
A
0
20 40 60  
80 100 120 140 160 180 200  
0
20 40 60  
80 100 120 140 160 180 200  
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 3. Typical Reverse Characteristics  
Figure 4. Maximum Reverse Characteristics  
1000  
100  
10  
100  
90  
80  
70  
60  
50  
40  
30  
20  
T = 25°C  
R
= 1.07°C/W  
TJ = 175°C  
J
q
JC  
DC  
Square Wave  
(Duty = 0.5)  
10  
0
0.1  
1
10  
100  
25 40 55 70 85 100 115 130 145 160 175  
V , REVERSE VOLTAGE (V)  
R
T , CASE TEMPERATURE (°C)  
C
Figure 5. Typical Junction Capacitance  
Figure 6. Current Derating per Device  
www.onsemi.com  
3
NHP820LFS, NRVHP820LFS  
TYPICAL CHARACTERISTICS  
10  
9
T = 175°C  
J
8
7
6
Square Wave  
(Duty = 0.5)  
5
4
DC  
3
2
1
0
0
1
2
3
4
5
6
7
8
I , AVERAGE FORWARD CURRENT (A)  
F(AV)  
Figure 7. Forward Power Dissipation  
100  
10  
50% Duty Cycle  
20%  
10%  
5%  
2%  
1
1%  
0.1  
0.01  
0.001  
Single Pulse  
0.0000001 0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 8. Typical Thermal Characteristics, JunctiontoAmbient  
www.onsemi.com  
4
NHP820LFS, NRVHP820LFS  
+V  
DD  
I
L
40 mH COIL  
BV  
DUT  
V
D
I
D
MERCURY  
SWITCH  
I
D
I
L
DUT  
S
1
V
DD  
t
0
t
1
t
2
t
Figure 9. Test Circuit  
Figure 10. CurrentVoltage Waveforms  
The unclamped inductive switching circuit shown in  
Figure 9 was used to demonstrate the controlled avalanche  
capability of the new “E’’ series Ultrafast rectifiers. A  
mercury switch was used instead of an electronic switch to  
simulate a noisy environment when the switch was being  
opened.  
component resistances. Assuming the component resistive  
elements are small Equation (1) approximates the total  
energy transferred to the diode. It can be seen from this  
equation that if the V  
voltage is low compared to the  
DD  
breakdown voltage of the device, the amount of energy  
contributed by the supply during breakdown is small and the  
total energy can be assumed to be nearly equal to the energy  
When S is closed at t the current in the inductor I ramps  
1
0
L
up linearly; and energy is stored in the coil. At t the switch  
stored in the coil during the time when S was closed,  
1
1
is opened and the voltage across the diode under test begins  
to rise rapidly, due to di/dt effects, when this induced voltage  
reaches the breakdown voltage of the diode, it is clamped at  
Equation (2).  
EQUATION (1):  
BV  
and the diode begins to conduct the full load current  
DUT  
BV  
DUT  
2
1
2
which now starts to decay linearly through the diode, and  
goes to zero at t .  
By solving the loop equation at the point in time when S  
W
[
LILPK ǒ Ǔ  
AVAL  
BV  
–V  
DUT DD  
2
1
is opened; and calculating the energy that is transferred to  
the diode it can be shown that the total energy transferred is  
equal to the energy stored in the inductor plus a finite amount  
EQUATION (2):  
2
1
2
of energy from the V power supply while the diode is in  
W
[
LI  
DD  
LPK  
AVAL  
breakdown (from t to t ) minus any losses due to finite  
1
2
www.onsemi.com  
5
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
LFPAK4 5x6  
CASE 760AB  
ISSUE C  
DATE 19 NOV 2019  
GENERIC  
MARKING DIAGRAM*  
XXXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
XXXXXX  
XXXXXX  
AWLYW  
W
= Work Week  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. Some products may not follow  
the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON82777G  
LFPAK4 5x6  
PAGE 1 OF 1  
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