NRVB1240MFST1G [ONSEMI]
12 A, 40 V Schottky Power Rectifier in SO-8FL;
| 型号： | NRVB1240MFST1G |
| 厂家： | 
ONSEMI |
| 描述： | 12 A, 40 V Schottky Power Rectifier in SO-8FL |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1240MFS,
NRVB1240MFS
Switch-mode
Power Rectifiers
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
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SCHOTTKY BARRIER
RECTIFIERS
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
12 AMPERES
40 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
MARKING
DIAGRAM
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
1
B1240
AYWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Lead and Mounting Surface Temperature for Soldering Purposes:
Not Used
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
B1240
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
40
12
R
Average Rectified Forward Current
I
A
A
F(AV)
ORDERING INFORMATION
(Rated V , T = 140°C)
R
C
Device
Package
Shipping†
1500 /
Peak Repetitive Forward Current,
I
20
FRM
(Rated V , Square Wave,
R
MBR1240MFST1G
SO−8 FL
20 kHz, T = 138°C)
C
(Pb−Free) Tape & Reel
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
FSM
MBR1240MFST3G
NRVB1240MFST1G
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Storage Temperature Range
T
−65 to +175
−55 to +150
150
°C
°C
mJ
stg
NRVB1240MFST3G
Operating Junction Temperature
T
J
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
MBR1240MFS/D
MBR1240MFS, NRVB1240MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
1.7
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 12 A, T = 125°C)
0.455
0.53
0.62
0.68
F
J
(i = 12 A, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
35
0.08
170
0.5
J
(Rated dc Voltage, T = 25°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR1240MFS, NRVB1240MFS
TYPICAL CHARACTERISTICS
100
10
1
100
T = 125°C
A
T = 125°C
A
10
1
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
0.1
0.1
0
0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
0
0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 150°C
T = 150°C
A
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
0
10
20
30
40
0
10
20
30
40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10000
1000
100
24
21
18
15
12
0
T = 25°C
A
R
= 1.7°C/W
q
JC
dc
SQUARE WAVE
9
6
3
0
10
0
20
40
60
80
100 120
140 160
0
10
20
30
40
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 6. Current Derating TO−220AB
Figure 5. Typical Junction Characteristics
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3
MBR1240MFS, NRVB1240MFS
TYPICAL CHARACTERISTICS
8
7
T = 150°C
J
I /I = 20
PK AV
I /I = 10
PK AV
6
5
4
3
2
I
/I = 5
PK AV
Square Wave
1
0
dc
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
50% Duty Cycle
20%
10%
5%
Assumes 25°C ambient and soldered to
2%
1%
2
a 600 mm − oz copper pad on PCB
1
0.1
Single Pulse
0.00001
0.01
0.001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 8. R(t) vs. Duty
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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