NLVU1GT125AMUTCG [ONSEMI]

Single Non-Inverting Buffer, 3-State;
NLVU1GT125AMUTCG
型号: NLVU1GT125AMUTCG
厂家: ONSEMI    ONSEMI
描述:

Single Non-Inverting Buffer, 3-State

文件: 总6页 (文件大小:193K)
中文:  中文翻译
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NLU1GT125  
Non-Inverting 3-State  
Buffer, TTL Level  
LSTTLCompatible Inputs  
The NLU1GT125 MiniGatet is an advanced CMOS highspeed  
noninverting buffer in ultrasmall footprint.  
The NLU1GT125 requires the 3state control input OE to be set  
High to place the output in the high impedance state.  
The device input is compatible with TTLtype input thresholds and  
the output has a full 5.0 V CMOS level output swing.  
www.onsemi.com  
MARKING  
DIAGRAMS  
The NLU1GT125 input and output structures provide protection  
when voltages up to 7.0 V are applied, regardless of the supply voltage.  
UDFN6  
1.2 x 1.0  
CASE 517AA  
7M  
Features  
1
High Speed: t = 3.8 ns (Typ) @ V = 5.0 V  
PD  
CC  
Low Power Dissipation: I = 1 mA (Max) at T = 25°C  
CC  
A
UDFN6  
1.0 x 1.0  
CASE 517BX  
TTLCompatible Input: V = 0.8 V; V = 2.0 V  
IL  
IH  
L M  
CMOSCompatible Output:  
V
OH  
> 0.8 V ; V < 0.1 V @ Load  
CC OL CC  
1
Power Down Protection Provided on inputs  
Balanced Propagation Delays  
UltraSmall Packages  
UDFN6  
1.45 x 1.0  
CASE 517AQ  
D M  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
These are PbFree Devices  
1
7
M
= Device Marking  
= Date Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
OE  
IN A  
GND  
1
2
3
6
5
V
CC  
NC  
4
OUT Y  
Figure 1. Pinout (Top View)  
OE  
IN A  
OUT Y  
Figure 2. Logic Symbol  
FUNCTION TABLE  
PIN ASSIGNMENT  
1
2
3
4
5
6
OE  
IN A  
Input  
Output  
Y
GND  
OUT Y  
NC  
A
OE  
L
H
X
L
L
H
L
H
Z
V
CC  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2019 Rev. 7  
NLU1GT125/D  
NLU1GT125  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
0.5 to +7.0  
V
IN  
DC Input Voltage  
0.5 to +7.0  
V
V
OUT  
DC Output Voltage  
0.5 to +7.0  
V
I
DC Input Diode Current  
V
< GND  
< GND  
OUT  
20  
mA  
mA  
mA  
mA  
mA  
°C  
IK  
IN  
I
DC Output Diode Current  
V
20  
OK  
I
DC Output Source/Sink Current  
DC Supply Current Per Supply Pin  
DC Ground Current per Ground Pin  
Storage Temperature Range  
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
Moisture Sensitivity  
12.5  
O
I
25  
CC  
I
25  
GND  
T
65 to +150  
STG  
T
260  
°C  
L
T
150  
Level 1  
°C  
J
MSL  
F
Flammability Rating  
Oxygen Index: 28 to 34  
UL 94 V0 @ 0.125 in  
500  
R
I
Latchup Performance Above V and Below GND at 125°C (Note 2)  
mA  
LATCHUP  
CC  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.  
2. Tested to EIA / JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
0
Max  
5.5  
Unit  
V
V
CC  
Positive DC Supply Voltage  
Digital Input Voltage  
V
IN  
5.5  
V
V
OUT  
Output Voltage  
0
5.5  
V
T
Operating FreeAir Temperature  
Input Transition Rise or Fall Rate  
55  
+125  
°C  
ns/V  
A
Dt/DV  
V
CC  
V
CC  
= 3.3 V 0.3 V  
= 5.0 V 0.5 V  
0
0
100  
20  
www.onsemi.com  
2
 
NLU1GT125  
DC ELECTRICAL CHARACTERISTICS  
T
= 555C  
A
to +1255C  
T
A
= 25 5C  
Typ  
T
= +855C  
A
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Conditions  
V
CC  
(V)  
Unit  
V
IH  
LowLevel Input  
Voltage  
3.0  
4.5 to 5.5  
1.4  
2.0  
1.4  
2.0  
1.4  
2.0  
V
V
LowLevel Input  
3.0  
0.53  
0.8  
0.53  
0.8  
0.53  
0.8  
V
V
IL  
Voltage  
4.5 to 5.5  
V
OH  
HighLevel Output  
Voltage  
V
OH  
= V or V  
3.0  
4.5  
2.9  
4.4  
3.0  
4.5  
2.9  
4.4  
2.9  
4.4  
IN  
IH  
IL  
I
= 50 mA  
V
I
I
= V or V  
= 4 mA  
= 8 mA  
IN  
OH  
OH  
IH  
IL  
3.0  
4.5  
2.58  
3.94  
2.48  
3.80  
2.34  
3.66  
V
OL  
LowLevel Output  
Voltage  
V
OL  
= V or V  
3.0  
4.5  
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN  
IH  
IL  
I
= 50 mA  
V
I
I
= V or V  
= 4 mA  
= 8 mA  
IN  
OL  
OL  
IH  
IL  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
I
Input Leakage  
Current  
0 v V v 5.5 V  
0 to 5.5  
0.1  
1.0  
1.0  
mA  
mA  
IN  
IN  
I
Quiescent Supply  
Current  
0 v V v V  
5.5  
1.0  
20  
40  
CC  
IN  
CC  
I
Quiescent Supply  
Current  
V
= 3.4 V  
5.5  
1.35  
1.50  
1.65  
mA  
CCT  
IN  
Other Input: V  
or GND  
CC  
I
Output Leakage  
Current  
V
= 5.5 V  
0.0  
0.0  
0.5  
5.0  
2.5  
10  
mA  
mA  
OPD  
OUT  
I
3State Leakage  
Current  
V
V
= V or V  
0.25  
2.5  
OZ  
IN  
OUT  
IH  
IL  
= V or  
CC  
GND  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
T
= 555C  
A
to +1255C  
T
A
= 25 5C  
Typ  
T
= +855C  
A
V
(V)  
Test  
Condition  
CC  
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Unit  
t
t
t
,
Propagation Delay, A to Y  
ns  
3.0 to 3.6  
4.5 to 5.5  
3.0 to 3.6  
4.5 to 5.5  
3.0 to 3.6  
4.5 to 5.5  
C = 15 pF  
L
5.6  
8.1  
8.0  
1.0  
1.0  
9.5  
12.0  
16.0  
PLH  
L
t
(Figures 3 and 5)  
C = 50 pF  
11.5  
13.0  
PHL  
C = 15 pF  
3.8  
5.3  
5.5  
7.5  
1.0  
1.0  
6.5  
8.5  
8.5  
10.5  
L
C = 50 pF  
L
,
Output Enable Time, OE to Y  
(Figures 4 and 6)  
ns  
ns  
C = 15 pF  
5.4  
7.9  
8.0  
11.5  
1.0  
1.0  
9.5  
13.0  
11.5  
15.0  
PZL  
t
L
C = 50 pF  
PZH  
L
C = 15 pF  
3.6  
5.1  
5.1  
7.1  
1.0  
1.0  
6.0  
8.0  
7.5  
9.5  
L
C = 50 pF  
L
,
Output Disable Time, OE to Y  
(Figures 4 and 6)  
C = 15 pF  
6.5  
8.0  
9.7  
13.2  
1.0  
1.0  
11.5  
15.0  
14.5  
18.5  
PLZ  
t
L
C = 50 pF  
PHZ  
L
C = 15 pF  
4.8  
7.0  
6.8  
8.8  
1.0  
1.0  
8.0  
10.0  
10.0  
12.0  
L
C = 50 pF  
L
C
Input Capacitance  
4
6
10  
10  
10.0  
pF  
pF  
IN  
C
3State Output Capacitance  
(Output in High Impedance  
State)  
OUT  
C
Power Dissipation  
Capacitance (Note 3)  
5.0  
14  
pF  
PD  
3. C is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without  
PD  
load. Average operating current can be obtained by the equation I  
= C V f + I . C is used to determine the noload  
CC(OPR)  
PD CC in CC PD  
2
dynamic power consumption: P = C V  
f + I V  
D
PD  
CC  
in CC CC.  
www.onsemi.com  
3
 
NLU1GT125  
SWITCHING WAVEFORMS  
V
CC  
50%  
OE  
GND  
V
CC  
t
t
PLZ  
PZL  
50%  
HIGH  
IMPEDANCE  
A
Y
GND  
50% V  
Y
Y
CC  
t
PHL  
t
PLH  
V
V
+ 0.3V  
OL  
t
t
PZH PHZ  
50% V  
CC  
0.3V  
OH  
50% V  
CC  
HIGH  
IMPEDANCE  
Figure 3. Switching Waveforms  
Figure 4.  
MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC).  
TEST POINT  
TEST POINT  
CONNECT TO V WHEN  
CC  
1 kW  
TESTING t  
AND t  
OUTPUT  
OUTPUT  
PLZ  
PZL.  
DEVICE  
UNDER  
TEST  
CONNECT TO GND  
WHEN  
DEVICE  
UNDER  
TEST  
C *  
L
C *  
L
TESTING t  
AND t  
PHZ  
PZH.  
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 5. Test Circuit  
Figure 6. Test Circuit  
INPUT  
Figure 7. Input Equivalent Circuit  
Package  
ORDERING INFORMATION  
Device  
Shipping  
NLU1GT125MUTCG  
UDFN6, 1.2 x 1.0, 0.4P  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
(PbFree)  
NLU1GT125AMUTCG,  
NLVU1GT125AMUTCG*  
UDFN6, 1.45 x 1.0, 0.5P  
(PbFree)  
NLU1GT125CMUTCG  
UDFN6, 1.0 x 1.0, 0.35P  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP  
Capable.  
MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC).  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
UDFN6, 1.45x1.0, 0.5P  
CASE 517AQ  
ISSUE O  
1
SCALE 4:1  
DATE 15 MAY 2008  
A
B
D
L
L
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.15 AND  
0.30 mm FROM THE TERMINAL TIP.  
L1  
DETAIL A  
PIN ONE  
REFERENCE  
OPTIONAL  
E
MILLIMETERS  
CONSTRUCTIONS  
DIM MIN  
0.45  
A1 0.00  
MAX  
0.55  
0.05  
A
0.10  
C
EXPOSED Cu  
MOLD CMPD  
A2  
b
0.07 REF  
0.20  
1.45 BSC  
TOP VIEW  
0.30  
0.10  
C
D
E
e
1.00 BSC  
0.50 BSC  
DETAIL B  
L
L1  
0.30  
−−−  
0.40  
0.15  
DETAIL B  
OPTIONAL  
0.05  
0.05  
C
C
CONSTRUCTIONS  
A
MOUNTING FOOTPRINT  
6X  
A1  
6X  
SEATING  
PLANE  
A2  
C
SIDE VIEW  
e
0.30  
PACKAGE  
OUTLINE  
6X L  
1.24  
3
1
DETAIL A  
6X  
0.53  
1
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
6
4
6X b  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
0.10  
C A B  
NOTE 3  
0.05  
C
BOTTOM VIEW  
GENERIC  
MARKING DIAGRAM*  
XM  
X
M
= Specific Device Code  
= Date Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON30313E  
UDFN6, 1.45x1.0, 0.5P  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2018  
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