NLAS9431MTR2G [ONSEMI]

Low Voltage Single Supply Dual DPDT Analog Switch; 低电压单电源双DPDT模拟开关
NLAS9431MTR2G
型号: NLAS9431MTR2G
厂家: ONSEMI    ONSEMI
描述:

Low Voltage Single Supply Dual DPDT Analog Switch
低电压单电源双DPDT模拟开关

复用器 开关 复用器或开关 信号电路 光电二极管 输出元件
文件: 总11页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLAS9431  
Low Voltage Single Supply  
Dual DPDT Analog Switch  
The NLAS9431 is an advanced dual−independent CMOS double  
pole−double throw (DPDT) analog switch fabricated with silicon  
gate CMOS technology. It achieves high speed propagation delays  
and low ON resistances while maintaining CMOS low power  
dissipation. This DPDT controls analog and digital voltages that may  
http://onsemi.com  
vary across the full power−supply range (from V to GND).  
MARKING  
CC  
The device has been designed so the ON resistance (R ) is much  
DIAGRAMS  
ON  
lower and more linear over input voltage than R of typical CMOS  
ON  
16  
analog switches.  
1
The channel select input is compatible with standard CMOS outputs.  
The channel select input structure provides protection when  
voltages between 0 V and 5.5 V are applied, regardless of the supply  
voltage. This input structure helps prevent device destruction caused  
by supply voltage − input/output voltage mismatch, battery backup,  
hot insertion, etc.  
BA M  
G
WQFN16  
CASE 488AP  
The NLAS9431 can also be used as a quad 2−to−1 multiplexer−  
demultiplexer analog switch with two Select pins that each controls  
two multiplexer−demultiplexers.  
BA  
M
G
= Specific Device Code  
= Date Code & Assembly Location  
= Pb−Free Device  
Direct Battery Connection  
Channel Select Input Over−Voltage Tolerant to 5.5 V  
Fast Switching and Propagation Speeds  
Break−Before−Make Circuitry  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
Low Power Dissipation: I = 2 A (Max) at T = 25°C  
CC  
A
Diode Protection Provided on Channel Select Input  
Improved Linearity and Lower ON Resistance over Input Voltage  
Latch−up Performance Exceeds 300 mA  
Chip Complexity: 158 FETs  
16−Lead WQFN Package, 1.8 mm x 2.6 mm  
This is a Pb−Free Device  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 0  
NLAS9431/D  
NLAS9431  
FUNCTION TABLE  
Select AB or CD  
On Channel  
L
H
NC to COM  
NO to COM  
U
U
U
U
U
SELECT AB  
COM A  
X1  
0
NO A  
0
U
U
1
2
NC A  
NO B  
1
0/1  
0
3
0
COM B  
2/3  
X1  
NC B  
1
SELECT CD  
NO C  
0
U
U
U
U
1
2
3
NC C  
NO D  
1
COM C  
COM D  
0/1  
2/3  
0
U
NC D  
1
Figure 1. Logic Diagram  
Figure 2. IEC Logic Symbol  
http://onsemi.com  
2
NLAS9431  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
V
Positive DC Supply Voltage  
*0.5 to )7.0  
V
CC  
IS  
Analog Input Voltage (V or V  
)
*0.5 v V v V )0.5  
IS CC  
NO  
COM  
Digital Select Input Voltage  
*0.5 v V v)7.0  
V
mA  
mW  
°C  
IN  
I
I
IK  
DC Current, Into or Out of Any Pin  
Power Dissipation in Still Air  
Storage Temperature Range  
$50  
P
T
800  
*65 to )150  
260  
D
STG  
T
L
T
J
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
Moisture Sensitivity  
°C  
+150  
°C  
MSL  
Level 1  
F
I
Flammability Rating  
Oxygen Index: 30% − 35%  
Above V and Below GND at 125°C (Note 1)  
UL 94−V0 (0.125 in)  
$300  
R
Latch−Up Performance  
Thermal Resistance  
mA  
Latch−Up  
CC  
80  
°C/W  
JA  
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those  
indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional  
operationshould be restricted to the Recommended Operating Conditions.  
1. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
Max  
5.5  
Unit  
V
V
DC Supply Voltage  
CC  
IN  
V
V
T
Digital Select Input Voltage  
Analog Input Voltage (NC, NO, COM)  
Operating Temperature Range  
Input Rise or Fall Time, SELECT  
GND  
GND  
*55  
5.5  
V
V
CC  
V
IS  
)125  
°C  
ns/V  
A
t , t  
V
CC  
V
CC  
= 3.3 V $ 0.3 V  
= 5.0 V $ 0.5 V  
0
0
100  
20  
r
f
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature 5C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
80  
117.8  
47.9  
20.4  
9.4  
90  
1
100  
110  
120  
130  
140  
1
10  
100  
1000  
37,000  
4.2  
TIME, YEARS  
17,800  
2.0  
Figure 3. Failure Rate vs. Time Junction Temperature  
8,900  
1.0  
http://onsemi.com  
3
 
NLAS9431  
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)  
Guaranteed Limit  
*555C to 255C t855C t1255C  
Symbol  
Parameter  
Condition  
V
Unit  
CC  
V
IH  
Minimum High−Level Input  
Voltage, Select Inputs  
2.0  
2.5  
3.0  
4.5  
5.5  
1.5  
1.9  
1.5  
1.9  
1.5  
1.9  
V
2.1  
2.1  
2.1  
3.15  
3.85  
3.15  
3.85  
3.15  
3.85  
V
IL  
Maximum Low−Level Input  
Voltage, Select Inputs  
2.0  
2.5  
3.0  
4.5  
5.5  
0.5  
0.6  
0.5  
0.6  
0.5  
0.6  
V
0.9  
0.9  
0.9  
1.35  
1.65  
1.35  
1.65  
1.35  
1.65  
I
I
I
Maximum Input Leakage  
Current  
V
= 5.5 V or GND  
= 5.5 V or GND  
5.5  
$0.2  
$10  
4.0  
$2.0  
$10  
4.0  
$2.0  
$10  
8.0  
A  
A  
A  
IN  
IN  
Power Off Leakage Current,  
Select Inputs  
V
IN  
0
OFF  
CC  
Maximum Quiescent Supply  
Current  
Select and V = V or GND  
5.5  
IS  
CC  
DC ELECTRICAL CHARACTERISTICS − Analog Section  
Guaranteed Limit  
*555C to 255C t855C t1255C  
Symbol  
Parameter  
Condition  
V
Unit  
CC  
R
ON  
Maximum “ON” Resistance  
(Figures 17 23)  
V
V
= V or V  
2.5  
3.0  
4.5  
5.5  
85  
45  
30  
25  
95  
50  
35  
30  
105  
55  
IN  
IL  
IH  
= GND to V  
IS  
CC  
I
IN  
I v 10.0 mA  
40  
35  
R
ON Resistance Flatness  
(Figures 17 23)  
V
= V or V  
IH  
4.5  
4
4
5
FLAT (ON)  
IN  
IL  
I
IN  
I v 10.0 mA  
V
IS  
= 1 V, 2 V, 3.5 V  
I
I
NO or NC Off Leakage  
Current (Figure 9)  
V
V
= V or V  
IH  
5.5  
5.5  
1
1
10  
10  
100  
100  
nA  
nA  
NC(OFF)  
IN  
IL  
or V = 1.0 V 4.5 V  
COM  
NO(OFF)  
NO  
NC  
I
COM ON Leakage Current  
(Figure 9)  
V
V
V
V
= V or V  
IL IH  
COM(ON)  
IN  
1.0 V or 4.5 V with V floating or  
NO  
NO  
COM  
NC  
1.0 V or 4.5 V with V floating  
NO  
= 1.0 V or 4.5 V  
http://onsemi.com  
4
NLAS9431  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
Guaranteed Maximum Limit  
*555C to 255C  
t855C  
t1255C  
V
(V)  
V
IS  
CC  
(V) Min Typ* Max Min Max Min Max  
Symbol  
Parameter  
Turn−On Time  
Test Conditions  
R = 300 ꢂ ꢃ C = 35 pF  
Unit  
t
t
t
2.5  
3.0  
4.5  
5.5  
2.0  
2.0  
3.0  
3.0  
5
5
2
2
23  
16  
11  
9
35  
24  
16  
14  
5
5
2
2
38  
27  
19  
17  
5
5
2
2
41  
30  
22  
20  
ns  
ON  
L
L
(Figures 12 and 13)  
(Figures 5 and 6)  
Turn−Off Time  
R = 300 ꢂ ꢃ C = 35 pF  
2.5  
3.0  
4.5  
5.5  
2.0  
2.0  
3.0  
3.0  
1
1
1
1
7
5
4
3
12  
10  
6
1
1
1
1
15  
13  
9
1
1
1
1
18  
16  
12  
11  
ns  
ns  
OFF  
BBM  
L
L
(Figures 12 and 13)  
(Figures 5 and 6)  
5
8
Minimum Break−Before−Make  
Time  
R = 300 ꢂ ꢃ C = 35 pF  
2.5  
3.0  
4.5  
5.5  
2.0  
2.0  
3.0  
3.0  
1
1
1
1
12  
11  
6
1
1
1
1
1
1
1
1
L
L
(Figure 4)  
5
Typical @ 25, V = 5.0 V  
CC  
pF  
C
C
C
C
Maximum Input Capacitance, Select Input  
Analog I/O (switch off)  
8
IN  
or C  
10  
10  
20  
NO  
NC  
Common I/O (switch off)  
COM  
(ON)  
Feedthrough (switch on)  
*Typical Characteristics are at 25°C.  
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)  
Typical  
V
CC  
V
255C  
145  
170  
175  
Symbol  
Parameter  
Condition  
Unit  
BW  
Maximum On−Channel −3dB  
Bandwidth or Minimum Frequency  
Response (Figure 11)  
V
V
= 0 dBm  
3.0  
4.5  
5.5  
MHz  
IS  
centered between V and GND  
IS  
CC  
(Figure 7)  
V
V
Maximum Feedthrough On Loss  
V
V
= 0 dBm @ 100 kHz to 50 MHz  
3.0  
4.5  
5.5  
−3  
−3  
−3  
dB  
dB  
pC  
ONL  
IS  
centered between V and GND  
IS  
CC  
(Figure 7)  
Off−Channel Isolation (Figure 10)  
f = 100 kHz; V = 1 V RMS  
3.0  
4.5  
5.5  
−93  
−93  
−93  
ISO  
IS  
V
IS  
centered between V and GND  
CC  
(Figure 7)  
Q
Charge Injection Select Input to  
Common I/O (Figure 15)  
V
V
GND, F = 20 kHz  
IS = CC to IN  
t = t = 3 ns  
r
3.0  
5.5  
1.5  
3.0  
f
R
= 0 , C = 1000 pF  
L
IS  
Q = C * V  
L
OUT  
(Figure 8)  
THD  
VCT  
Total Harmonic Distortion THD +  
Noise (Figure 14)  
F
= 20 Hz to 100 kHz, R = Rgen = 600 , C = 50 pF  
%
IN  
L
L
V
= 5.0 V sine wave  
5.5  
0.1  
IS  
PP  
Channel−to−Channel Crosstalk  
f = 100 kHz; V = 1 V RMS  
dB  
IS  
V
centered between V and GND  
5.5  
3.0  
−90  
−90  
IS  
CC  
(Figure 7)  
http://onsemi.com  
5
NLAS9431  
V
IS  
DUT  
Input  
V
IS  
Output  
GND  
V
OUT  
0.1 F  
t
BMM  
300 ꢂ  
35 pF  
90%  
90% of V  
OH  
Output  
Switch Select Pin  
GND  
Figure 4. tBBM (Time Break−Before−Make)  
V
CC  
Input  
50%  
50%  
90%  
DUT  
0 V  
V
IS  
Output  
V
OUT  
V
0.1 F  
OH  
Open  
90%  
300 ꢂ  
35 pF  
Output  
V
OL  
Input  
t
t
OFF  
ON  
Figure 5. tON/tOFF  
V
CC  
V
IS  
Input  
50%  
50%  
DUT  
0 V  
300 ꢂ  
Output  
V
OUT  
V
OH  
Open  
35 pF  
Output  
10%  
10%  
V
OL  
Input  
t
t
ON  
OFF  
Figure 6. tON/tOFF  
http://onsemi.com  
6
NLAS9431  
50 ꢂ  
DUT  
Reference  
Input  
Transmitted  
Output  
V
IS  
50 Generator  
V
OUT  
50 ꢂ  
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is  
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.  
ISO  
ONL  
V
V
OUT  
IS  
ǒ Ǔfor V  
V
V
= Off Channel Isolation = 20 Log  
at 100 kHz  
IN  
ISO  
V
OUT  
= On Channel Loss = 20 Log ǒ Ǔfor V  
at 100 kHz to 50 MHz  
ONL  
IN  
V
IS  
Bandwidth (BW) = the frequency 3 dB below V  
ONL  
V
CT  
= Use V  
setup and test to all other switch analog input/outputs terminated with 50 ꢂ  
ISO  
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk  
(On Channel to Off Channel)/VONL  
DUT  
V
CC  
V
IN  
Output  
Open  
GND  
C
L
Output  
Off  
V
OUT  
Off  
On  
V
IN  
Figure 8. Charge Injection: (Q)  
100  
10  
1
I
COM(ON)  
0.1  
0.01  
I
COM(OFF)  
V
CC  
= 5.0 V  
85  
I
NO(OFF)  
0.001  
−55  
−20  
25  
70  
125  
TEMPERATURE (°C)  
Figure 9. Switch Leakage vs. Temperature  
http://onsemi.com  
7
NLAS9431  
+15  
+10  
+5  
0
0
−20  
−40  
−60  
−80  
−100  
1.0  
Bandwidth  
(ON−RESPONSE)  
2.0  
3.0  
0
PHASE SHIFT  
4.0  
5.0  
6.0  
7.0  
8.0  
−5  
Off Isolation  
−10  
−15  
−20  
−25  
V
CC  
= 5.0 V  
T = 25°C  
A
V
= 5.0 V  
CC  
9.0  
−30  
−35  
100 300  
T = 25°C  
A
10.0  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
100 200  
FREQUENCY (MHz)  
FREQUENCY (MHz)  
Figure 10. Off−Channel Isolation  
Figure 11. Typical Bandwidth and Phase Shift  
30  
25  
20  
15  
10  
30  
V
CC  
= 4.5 V  
25  
20  
15  
10  
5
t
(ns)  
ON  
t
ON  
t
t
(ns)  
OFF  
5
0
OFF  
0
−55  
2.5  
3
3.5  
V
4
4.5  
5
−40  
25  
Temperature (°C)  
85  
125  
(VOLTS)  
CC  
Figure 12. tON and tOFF vs. VCC at 25°C  
Figure 13. tON and tOFF vs. Temp  
1
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
V
= 3.0 V  
= 3.6 V  
INpp  
CC  
V
CC  
= 5 V  
0.1  
V
INpp  
= 5.0 V  
= 5.5 V  
V
CC  
V
CC  
= 3 V  
0
−0.5  
0.01  
1
10  
FREQUENCY (kHz)  
100  
0
1
2
3
4
5
V
COM  
(V)  
Figure 14. Total Harmonic Distortion  
Plus Noise vs. Frequency  
Figure 15. Charge Injection vs. COM Voltage  
http://onsemi.com  
8
NLAS9431  
100  
80  
60  
40  
20  
0
100  
10  
V
= 2.0 V  
CC  
1
0.1  
V
CC  
= 2.5 V  
0.01  
V
= 3.0 V  
V
= 3.0 V  
CC  
CC  
V
= 4.0 V  
5.0  
0.001  
0.0001  
CC  
V
= 5.0 V  
V
CC  
= 5.5 V  
3.0  
CC  
0.00001  
0.0  
1.0  
2.0  
4.0  
6.0  
−40  
−20  
0
20  
60  
80  
100  
120  
Temperature(°C)  
V
IS  
(VDC)  
Figure 16. ICC vs. Temp, VCC = 3 V & 5 V  
Figure 17. RON vs. VCC, Temp = 255C  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
125°C  
25°C  
25°C  
−55°C  
−55°C  
85°C  
85°C  
0.5  
125°C  
0.0  
1.0  
1.5  
(VDC)  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
V (VDC)  
IS  
2.0  
2.5  
3.0  
V
IS  
Figure 18. RON vs Temp, VCC = 2.0 V  
Figure 19. RON vs. Temp, VCC = 2.5 V  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
125°C  
85°C  
125°C  
85°C  
25°C  
−55°C  
25°C  
−55°C  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
(VDC)  
2.5  
3.0  
3.5  
0.0 0.5 1.0 1.5 2.0  
2.5 3.0 3.5 4.0 4.5  
V
IS  
(VDC)  
V
IS  
Figure 21. RON vs. Temp, VCC = 4.5 V  
Figure 20. RON vs. Temp, VCC = 3.0 V  
http://onsemi.com  
9
NLAS9431  
25  
20  
15  
10  
5
25  
125°C  
20  
15  
10  
5
125°C  
25°C  
25°C  
−55°C  
−55°C  
85°C  
85°C  
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
V
IS  
(VDC)  
V
IS  
(VDC)  
Figure 22. RON vs. Temp, VCC = 5.0 V  
Figure 23. RON vs. Temp, VCC = 5.5 V  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Circuit  
Indicator  
Device  
Function  
Package Tape & Reel  
Suffix  
Suffix  
Technology  
Device  
Package Type  
Shipping  
NLAS9431MTR2G  
NL  
AS  
9431  
MT  
R2  
WQFN16  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
http://onsemi.com  
10  
NLAS9431  
PACKAGE DIMENSIONS  
WQFN16  
MN SUFFIX  
CASE 488AP−01  
ISSUE A  
D
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM  
FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED PAD  
AS WELL AS THE TERMINALS.  
PIN 1 REFERENCE  
E
5. EXPOSED PADS CONNECTED TO DIE FLAG.  
USED AS TEST CONTACTS.  
MILLIMETERS  
DIM MIN  
MAX  
0.80  
0.15  
0.15  
C
2X  
A
A1  
A3  
b
0.70  
0.00  
0.050  
0.20 REF  
0.15  
C
2X  
0.25  
B
D
1.80 BSC  
E
2.60 BSC  
0.40 BSC  
e
A
L
0.30  
0.40  
0.50  
0.60  
0.10  
0.08  
C
L1  
C
SEATING  
PLANE  
A1  
MOUNTING FOOTPRINT  
A3  
C
5
8
0.562  
0.0221  
0.400  
0.0157  
15 X L  
4
1
9
0.225  
0.0089  
1
e
12  
2.900  
0.1142  
16  
L1  
0.463  
0.0182  
16 X  
0.10 C A B  
0.05 C  
b
1.200  
0.0472  
NOTE 3  
2.100  
0.0827  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any  
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over  
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under  
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,  
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of  
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NLAS9431/D  

相关型号:

NLASB3157

2:1 Multiplexer
ONSEMI

NLASB3157/D

SPDT Analog Switch
ETC

NLASB3157DFT2

2:1 Multiplexer
ONSEMI

NLASB3157DFT2G

2:1 Multiplexer
ONSEMI

NLASB3157DFT2GH

Analog Switch, Singe SPDT, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
ONSEMI

NLASB3157MTR2G

SPDT, 3 ohm RON Switch
ONSEMI

NLASB3157_06

SPDT, 3 ohm RON Switch
ONSEMI

NLAST4051

Analog Multiplexer/ Demultiplexer
ONSEMI

NLAST4051/D

Analog Multiplexer/ Demultiplexer
ONSEMI

NLAST4051D

Analog Multiplexer/ Demultiplexer
ONSEMI

NLAST4051DR2

Analog Multiplexer/ Demultiplexer
ONSEMI

NLAST4051DT

Analog Multiplexer/ Demultiplexer
ONSEMI