NJVMJD44H11D3T4G [ONSEMI]
8 A，80 V，NPN 双极功率晶体管;
| 型号： | NJVMJD44H11D3T4G |
| 厂家： | 
ONSEMI |
| 描述： | 8 A，80 V，NPN 双极功率晶体管 开关 晶体管 |
| 文件： | 总8页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
8 AMPERES
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
80 VOLTS
20 WATTS
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
MARKING
DIAGRAMS
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
4
YWW
J4
xH11
DPAK
CASE 369C
STYLE 1
V
CE(sat)
= 1.0 Volt Max @ 8.0 Amperes
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
2
1
3
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
4
YWW
J4
xH11
DPAK−3
CASE 369D
STYLE 1
MAXIMUM RATINGS
1
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Max
80
5
Unit
Vdc
Vdc
Adc
2
3
V
CEO
V
EB
Y
= Year
WW
x
= Work Week
= 4 or 5
I
C
8
16
Collector Current − Continuous
Peak
P
20
0.16
W
W/°C
Total Power Dissipation @ T = 25°C
D
D
C
Derate above 25°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
P
1.75
0.014
Total Power Dissipation* @ T = 25°C
W
W/°C
A
Derate above 25°C
dimensions section on page 3 of this data sheet.
Operating and Storage Junction Temperature
Range
T , T
−55 to
+150
°C
J
stg
Preferred devices are recommended choices for future use
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
and best overall value.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering
R
6.25
71.4
260
°C/W
°C/W
°C
q
q
JC
JA
L
R
T
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 6
MJD44H11/D
MJD44H11 (NPN) MJD45H11 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
80
−
−
−
−
−
Vdc
mA
CEO(sus)
(I = 30 mA, I = 0)
C
B
Collector Cutoff Current
(V = Rated V , V = 0)
I
10
50
CES
CE
CEO BE
Emitter Cutoff Current
(V = 5 Vdc)
I
−
mA
EBO
EB
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
V
V
−
−
−
−
−
−
1
1.5
−
Vdc
Vdc
−
CE(sat)
(I = 8 Adc, I = 0.4 Adc)
C
B
Base−Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
BE(sat)
C
B
DC Current Gain
h
FE
60
40
(V = 1 Vdc, I = 2 Adc)
CE
C
DC Current Gain
−
(V = 1 Vdc, I = 4 Adc)
CE
C
DYNAMIC CHARACTERISTICS
Collector Capacitance
C
pF
cb
(V = 10 Vdc, f
CB
= 1 MHz)
MJD44H11
MJD45H11
test
−
−
130
230
−
−
Gain Bandwidth Product
(I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)
f
T
MHz
MJD44H11
MJD45H11
C
CE
−
−
50
40
−
−
SWITCHING TIMES
Delay and Rise Times
t + t
ns
ns
ns
d
r
(I = 5 Adc, I = 0.5 Adc)
MJD44H11
MJD45H11
C
B1
−
−
300
135
−
−
Storage Time
t
s
(I = 5 Adc, I = I = 0.5 Adc)
MJD44H11
MJD45H11
C
B1
B2
−
−
500
500
−
−
Fall Time
t
f
(I = 5 Adc, I = I = 0.5 Adc)
MJD44H11
MJD45H11
C
B1
B2
−
−
140
100
−
−
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2
MJD44H11 (NPN) MJD45H11 (PNP)
ORDERING INFORMATION
Device
†
Package Type
DPAK
Package
369C
Shipping
MJD44H11
75 Units / Rail
75 Units / Rail
75 Units / Rail
MJD44H11−001
MJD44H11G
DPAK−3
369D
DPAK
369C
(Pb−Free)
MJD44H11RL
MJD44H11T4
MJD44H11T4G
DPAK
DPAK
369C
369C
369C
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
DPAK
(Pb−Free)
MJD44H11T5
MJD45H11
DPAK
DPAK
369C
369C
369D
369C
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
75 Units / Rail
MJD45H11−001
MJD45H11G
DPAK−3
DPAK
(Pb−Free)
MJD45H11RL
MJD45H11T4
MJD45H11T4G
DPAK
DPAK
369C
369C
369C
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
MJD44H11 (NPN) MJD45H11 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
q
JC
q
JC(t)
= 6.25°C/W MAX
q
JC
0.1
0.07
0.05
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
0.01
T
− T = P q
C (pk) JC(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500
1 k
t, TIME (ms)
Figure 1. Thermal Response
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100ꢀms
10
5
500ꢀms
breakdown. Safe operating area curves indicate I − V
C
CE
1ꢀms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
3
2
5ꢀms
dc
1
The data of Figure 2 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
0.5
0.3
THERMAL LIMIT @ T = 25°C
WIRE BOND LIMIT
C
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C.
T
may be calculated from the data in
0.1
J(pk)
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.02
1
3
5
7
10
20 30
50 70 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Forward Bias
Safe Operating Area
T
A
T
C
2.5 25
2
20
T
C
1.5 15
T
1
0.5
0
10
5
A
SURFACE
MOUNT
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 3. Power Derating
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4
MJD44H11 (NPN) MJD45H11 (PNP)
1000
100
10
1000
V
CE
= 4 V
1 V
V
= 4 V
CE
100
V
CE
= 1 V
T = 25°C
J
T = 25°C
J
10
0.1
0.1
1
10
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
1000
100
10
T = 125°C
J
25°C
T = 125°C
J
−ꢁ40°C
25°C
100
−ꢁ40°C
V
CE
= 1 V
V
CE
= 1 V
10
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
1.2
1
1.2
1
V
V
BE(sat)
BE(sat)
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
I /I = 10
C B
I /I = 10
C B
T = 25°C
J
T = 25°C
J
V
CE(sat)
10
V
CE(sat)
0.1
1
10
0.1
1
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. MJD44H11 On−Voltages
Figure 9. MJD45H11 On−Voltages
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5
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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7
MJD44H11 (NPN) MJD45H11 (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MJD44H11/D
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