NGTG20N60L2TF1G [ONSEMI]
IGBT,N 沟道,600V,20A,饱和压=1.45V,单 TO-3PF-3L;型号: | NGTG20N60L2TF1G |
厂家: | ONSEMI |
描述: | IGBT,N 沟道,600V,20A,饱和压=1.45V,单 TO-3PF-3L 双极性晶体管 |
文件: | 总6页 (文件大小:472K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NGTG20N60L2TF1G
N-Channel IGBT
www.onsemi.cn
600V, 20A, V (sat);1.45V 单体TO-3PF-3L
CE
主要特长
IGBT V (sat)=1.45V typ. (I =20A, V =15V)
适用全绝缘型封装
最高结温 Tj=175C
CE
C
GE
IGBT t =67ns typ.
f
增强型 (Enhancement type)
应用
白物家电的功率因数校正
通用变频器 (General purpose inverter)
规格
绝对最大额定值 / Ta = 25C (除非特殊指定)
参数
记号
条件
额定值
600
单位
V
集电极-发射极电压(Collector to Emitter Voltage)
栅极-发射极电压(Gate to Emitter Voltage)
V
V
CES
20
40
V
GES
@ Tc=25C *2
@ Tc=100C *2
A
集电极电流 Collector Current (DC)
I
I
*1
Limited by Tjmax
C
20
A
集电极电流 Collector Current (脉冲)
允许功耗(Allowable Power Dissipation)
Pulse width Limited by Tjmax
105
A
CP
Tc=25C (Our ideal heat dissipation condition)
P
D
64
W
*2
结温(Junction Temperature)
Tj
175
C
C
储存温度(Storage Temperature)
Tstg
- 55 to +175
注 : *1 集电极电流由下式计算:
Tjmax - Tc
I (Tc)=
C
R
(j-c)×
V
CE
(sat)(Tj, I (Tc))
C
th
*2 我司的条件为背面散热。
方法为:器件的背面涂上硅脂, 然后将该器件贴在 铝制的水冷散热器上。
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
订单及封装情况
器件名称
出货包装
封装
注解
TO-3PF-3L
SC-94
30
不含铅
NGTG20N60L2TF1G
pcs. / tube
印刷图
电气连接
2
GTG20N
LOT No.
60L2
1
3
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 0
1
Publication Order Number :
NGTG20N60L2TF1GCN/D
NGTG20N60L2TF1G
电气特性 / Ta = 25C (除非特殊指定)
额定值
参数
记号
条件
单位
min
600
typ
max
集电极-发射极击穿电压
V(
)
I
=500A, V =0V
C GE
V
BR CES
(Collector to Emitter Breakdown Voltage)
Tc=25C
10
A
集电极-发射极截止电流
I
I
V
=600V, V =0V
GE
CES
CE
(Collector to Emitter Cutoff Current)
Tc=150C
1
mA
栅极-发射极漏电流
V
V
=20V, V
=0V
100
nA
V
GES
GE
CE
(Gate to Emitter Leakage Current)
栅极-发射极阈值电压
V
(th)
GE
=20V, I =250A
4.5
6.5
CE
C
(Gate to Emitter threshold voltage)
Tc=25C
1.45
1.8
1.65
V
V
集电极-发射极饱和电压
V
(
)
V =15V, I =20A
GE C
CE sat
(Collector to Emitter Saturated Voltage)
Tc=150C
输入电容(Input Capacitance)
输出电容(Output Capacitance)
Cies
2000
60
pF
pF
Coes
V
=20V,f=1MHz
CE
反向传输电容
Cres
50
pF
(Reverse Transfer Capacitance)
开启迟延时间(Turn-on delay time)
t (on)
d
60
37
ns
ns
ns
ns
ns
ns
nC
nC
V
CC
=300V,I =20A
C
=30,L=200H
上升时间(Rise Time)
t
r
R
G
开启时间(Turn-ON Time)
ton
t (off)
400
193
67
V
GE
=0V/15V
关断迟延时间(Turn-OFF Delay Time)
下降时间(Fall Time)
d
Vclamp=400V
t
f
参照图 1, 图 2
关断时间(Turn-OFF Time)
总栅极电荷(Total Gate Charge)
栅极-发射极电荷(Gate to Emitter charge)
toff
281
84
Qg
Qge
16
V
CE
=300V, V =15V, I =20A
GE
C
栅极-集电极米勒电荷
Qgc
37
nC
(Gate to Collector “Miller” Charge)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
热特性 / Ta = 25C (除非特殊指定)
参数
记号
条件
额定值
单位
热阻
Thermal Resistance (junction- Case)
热阻 结到环境
(结到外壳)
Rth(j-c)
Tc=25
C (我司的理想散热条件)*2
2.33
47.5
C /W
C /W
(
)
Rth(j-a)
Thermal Resistance (junction- atmosphere)
图 1 : 开关时间测试电路
图 2 : 时间图
Clamp Di
V
GE
90%
10%
0
200H
DUT
I
C
V
CC
90%
90%
R
G
10%
10%
10%
10%
V
CE
0
NGTG20N60L2TF1G
t
t
r
f
t (off)
d
t (on)
d
t
t
on
off
IT16383
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NGTG20N60L2TF1G
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3
NGTG20N60L2TF1G
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NGTG20N60L2TF1G
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5
NGTG20N60L2TF1G
封装尺寸
单位: mm
TO-3PF-3L
CASE 340AH
ISSUE A
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
P
A
E
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
A1
Q
H1
MILLIMETERS
DIM MIN
MAX
5.70
3.20
3.50
2.20
0.95
2.15
4.20
1.10
24.70
25.30
3.70
15.70
5.55
10.20
19.50
5.20
2.20
3.80
4.70
A
A1
A2
A3
b
b2
b3
c
5.30
2.80
3.10
1.80
0.65
1.90
3.80
0.80
24.30
D
D2
D
L2
D3
D2 24.70
L1
D3
E
e
H1
L
L1
L2
P
3.30
15.30
5.35
9.80
19.10
4.80
1.90
3.40
4.30
NOTE 3
L
Q
1
2
3
c
3X
b
3X b2
A3
A2
b3
e
1 : Gate
2 : Collector
3 : Emitter
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