NGTB40N65IHRWG [ONSEMI]
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A;
| 型号： | NGTB40N65IHRWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 双极性晶体管 |
| 文件： | 总9页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB40N65IHRWG
IGBT with Monolithic
Reverse Conducting Diode
This Insulated Gate Bipolar Transistor (IGBT) features robust and
cost effective Field Stop (FS2) trench construction with a monolithic
RC Diode. It provides a cost effective Solution for applications where
diode losses are minimal. The IGBT is optimized for low conduction
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losses (low V ) and is well suited for resonant or soft switching
CEsat
applications.
40 A, 650 V
Features
V
CEsat = 1.55 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Conduction Design for Soft Switching Application
• Reduced Power Dissipation in Inducting Heating Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device
Eoff = 0.42 mJ
C
Typical Applications
• Inductive Heating
• Air Conditioning PFC
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
Symbol
Value
Unit
V
V
CES
650
I
C
A
G
TO−247
CASE 340AL
@ T = 25°C
80
40
C
C
@ T = 100°C
C
E
Pulsed collector current, t
limited
I
160
A
A
pulse
CM
by T
, 10 ms pulse, V = 15 V
Jmax
GE
MARKING DIAGRAM
Diode forward current
I
F
@ T = 25°C
80
40
C
@ T = 100°C
C
Diode pulsed current, t
limited
I
160
A
V
pulse
FM
by T
, 10 ms pulse, V = 0 V
Jmax
GE
Gate−emitter voltage
Transient Gate−emitter voltage
V
20
25
GE
40N65IHR
AYWWG
(t
pulse
= 5 ms, D < 0.10)
Power Dissipation
P
D
W
@ T = 25°C
405
202
C
@ T = 100°C
C
Operating junction temperature range
Storage temperature range
T
−40 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
A
Y
= Assembly Location
= Year
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
WW
G
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB40N65IHRWG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2017 − Rev. 1
NGTB40N65IHR/D
NGTB40N65IHRWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.37
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
−
−
1.55
1.95
1.7
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 650 V
I
−
−
−
1.0
0.3
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
4628
148
126
190
38
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 400 V, I = 40 A, V = 15 V
ge
gc
C
GE
90
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
197
74
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 400 V, I = 40 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
0.42
210
106
0.7
mJ
ns
GE
t
d(off)
T = 175°C
J
V
CC
= 400 V, I = 40 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 40 A
V
F
−
−
1.50
1.70
1.80
−
GE
F
V
GE
= 0 V, I = 40 A, T = 175°C
F J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
140
140
120
100
80
T = 25°C
V
= 13 V
to 20 V
V
= 13 V
to 20 V
J
T = 150°C
GE
GE
J
11 V
120
100
80
11 V
10 V
9 V
10 V
9 V
60
60
40
40
8 V
7 V
20
0
20
0
8 V
7 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
120
100
80
140
120
100
80
T = −55°C
J
V
= 13 V
to 20 V
T = 175°C
GE
V
= 13 V
to 20 V
J
GE
11 V
11 V
10 V
9 V
10 V
60
60
40
40
9 V
8 V
7 V
20
0
20
0
7 V
8 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
140
2.6
2.4
120
100
80
I
I
= 60 A
= 40 A
C
2.2
2.0
1.8
1.6
1.4
C
60
I
C
= 20 A
40
T = 175°C
J
20
0
1.2
1.0
T = 25°C
J
0
2
4
6
8
10
12
14
−75
−25
25
75
125
175
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
10K
1K
100
90
C
ies
T = 25°C
J
80
T = 175°C
J
70
T = 25°C
J
60
50
40
30
20
10
0
C
oes
C
res
100
10
0
0
0
10 20
30 40 50
60 70 80
90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
20
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
V
V
I
= 400 V
= 15 V
= 40 A
CE
18
16
14
12
10
8
GE
E
(off)
C
V
V
= 400 V
= 15 V
= 40 A
CE
6
GE
4
I
C
Rg = 10 W
0.35
0.30
2
0
50
100
150
200
0
20 40 60 80 100 120 140 160 180 200
Q , GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
td
off
E
(off)
t
f
10
1
V
CE
= 400 V
= 15 V
T = 175°C
V
V
= 400 V
= 15 V
CE
V
GE
GE
J
I
C
= 40 A
Rg = 10 W
0.2
0
Rg = 10 W
25
50
75
100 125
150 175
200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
2.0
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
V
= 400 V
= 15 V
CE
t
E
off
GE
d(off)
I
C
= 40 A
t
f
T = 175°C
J
10
1
V
V
= 400 V
= 15 V
CE
GE
T = 175°C
J
Rg = 10 W
0.2
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. Rg
10K
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 40 A
V
V
= 400 V
= 15 V
= 40 A
GE
CE
C
GE
Rg = 10 W
T = 175°C
J
I
C
E
off
T = 175°C
J
t
d(off)
1K
100
10
t
f
0.2
0
0
10
20
30
40
50
60
70
150 200 250 300 350 400 450 500 550 600
R , GATE RESISTOR (W)
G
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. Rg
Figure 16. Switching Loss vs. VCE
1000
1000
100
10
100 ms
50 ms
t
1 ms
d(off)
dc operation
t
f
100
Single Nonrepetitive
V
= 15 V
= 40 A
GE
Pulse T = 25°C
C
1
I
C
Curves must be derated
linearly with increase
in temperature
Rg = 10 W
T = 175°C
J
10
0.1
200
300
400
500
600
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
2.75
1K
2.50
2.25
2.00
1.75
1.50
100
I
I
I
= 60 A
= 40 A
= 20 A
C
C
10
1
C
V
T
= 15 V
= 175°C
1.25
1.00
GE
C
1
10
100
1K
10K
−75
−25
25
75
125
175
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 19. Reverse Bias Safe Operating Area
Figure 20. Forward Voltage vs. Junction
Temperature
1
50% Duty Cycle
R
= 0.37
q
JC
20%
10%
5%
0.1
Duty Factor = t /t
1
2
2%
0.01
Peak T = P
x Z
+ T
JC
q
J
DM
C
R (°C/W)
i
t (sec)
i
0.0414
0.0388
0.0323
0.1006
0.1364
0.0233
0.0024
0.0082
0.0310
0.0314
0.0733
1.3573
R
C
R
R
n
Junction
C = t /R
Case
1
1
2
0.001
i
i
i
Single Pulse
C
C
n
2
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 21. IGBT Transient Thermal Impedance
Figure 22. Test Circuit for Switching Characteristics
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6
NGTB40N65IHRWG
Figure 23. Definition of Turn Off Waveform
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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