NGTB15N120FL2WG [ONSEMI]
IGBT 1200V 15A 太阳能/UPS;型号: | NGTB15N120FL2WG |
厂家: | ONSEMI |
描述: | IGBT 1200V 15A 太阳能/UPS 栅 双极性晶体管 |
文件: | 总11页 (文件大小:330K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Field Stop II
NGTB15N120FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
15 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.37 mJ
C
G
Features
• Extremely Efficient Trench with Field Stop Technology
E
• T
= 175°C
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
G
C
Typical Applications
E
TO−247
CASE 340AM
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter Voltage
V
1200
V
A
CES
Collector Current
I
C
15N120FL2
AYWWG
@ T = 25°C
30
15
C
@ T = 100°C
C
Pulsed Collector Current, T
I
60
A
A
pulse
CM
Limited by T
Jmax
Diode Forward Current
@ T = 25°C
I
F
30
15
C
@ T = 100°C
C
15N120FL2 = Specific Device Code
Diode Pulsed Current, T
Limited
I
60
A
V
pulse
FM
A
Y
= Assembly Location
= Year
by T
Jmax
WW
G
= Work Week
= Pb−Free Package
Gate−emitter Voltage
Transient Gate−emitter Voltage
(T = 5 ms, D < 0.10)
V
20
30
GE
pulse
Power Dissipation
P
D
W
@ T = 25°C
294
147
C
ORDERING INFORMATION
@ T = 100°C
C
Device
NGTB15N120FL2WG
Package
Shipping
30 Units / Rail
Short Circuit Withstand Time
T
10
ms
°C
SC
V
= 15 V, V = 500 V, T ≤ 150°C
GE
CE J
TO−247
(Pb−Free)
Operating Junction Temperature
Range
T
−55 to +175
J
Storage Temperature Range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2021 − Rev. 4
NGTB15N120FL2W/D
NGTB15N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.51
0.81
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 15 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 15 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.65
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.4
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
2640
88
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
50
res
nC
ns
Q
109
23
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 15 A, V = 15 V
ge
gc
C
GE
51
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
64
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
104
132
173
1.20
0.37
1.57
62
Turn−off delay time
t
T = 25°C
d(off)
J
V
= 600 V, I = 15 A
CC
C
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15 V
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
on
off
E
ts
t
t
d(on)
t
r
126
138
300
1.45
0.76
2.21
Turn−off delay time
T = 150°C
d(off)
J
V
= 600 V, I = 15 A
C
CC
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15 V
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 15 A
V
t
−
−
2.00
2.30
2.60
V
GE
F
F
V
GE
= 0 V, I = 50 A, T = 175°C
−
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
110
0.69
11
−
−
−
ns
mc
A
J
rr
I = 15 A, V = 200 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
45
45
T = 150°C
J
T = 25°C
J
V
GE
= 13 V
40
35
30
25
20
15
10
40
35
30
25
20
15
10
to 20 V
V
= 13 V
to 20 V
GE
11 V
11 V
10 V
9 V
10 V
9 V
8 V
7 V
8 V
7 V
5
0
5
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
, COLLECTOR−EMITTER VOLTAGE (V)
CE
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
T = −55°C
V
= 20 V
to 13 V
J
GE
T = 25°C
J
11 V
10 V
T = 150°C
J
9 V
8 V
5
0
5
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11 12 13 14
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
CE
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10,000
3.0
2.5
2.0
C
ies
I
C
= 15 A
1000
100
10
1.5
1.0
C
oes
C
res
0.5
0
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
10 20 30
40 50
60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
16
14
12
10
T = 25°C
J
T = 150°C
J
8
6
4
V
V
= 600 V
= 15 V
CE
GE
5
0
2
0
I
C
= 15 A
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
20
40
60
80
100
120
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
200
160
V
V
I
= 600 V
= 15 V
= 15 A
V
V
I
= 600 V
= 15 V
= 15 A
CE
CE
GE
GE
C
C
Rg = 10 W
Rg = 10 W
t
d(off)
E
on
120
80
40
0
t
f
E
off
t
d(on)
0.2
0
t
r
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
150
120
90
60
30
0
V
V
= 600 V
= 15 V
CE
E
on
GE
T = 150°C
J
Rg = 10 W
t
d(off)
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
t
E
off
J
f
Rg = 10 W
t
d(on)
0.5
0
t
r
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
2.4
2.0
1.6
1.2
700
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
E
t
d(off)
on
600
500
400
300
200
100
0
GE
GE
T = 150°C
T = 150°C
J
J
I
C
= 15 A
I
C
= 15 A
E
off
t
f
0.8
0.4
t
d(on)
t
r
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
1.8
1.5
1.2
0.9
200
160
120
80
V
= 15 V
GE
V
= 15 V
GE
T = 150°C
E
on
J
T = 150°C
J
I
C
= 15 A
I
C
= 15 A
Rg = 10 W
Rg = 10 W
t
d(off)
t
f
E
off
0.6
0.3
40
0
t
t
d(on)
r
350 400 450 500 550 600 650 700 750 800
350 400 450 500 550 600 650 700 750 800
V , COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
dc operation
50 ms
100 ms
Single Nonrepetitive
10
1
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
1 ms
V
GE
= 15 V, T = 125°C
C
0.1
1
10
100
1000
10k
1
10
100
1000
10k
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.51
q
JC
20%
10%
5%
R
C
R
C
R
Junction
Case
1
1
2
2
n
n
R (°C/W) C (J/°C)
0.091186 0.003468
0.066118 0.015124
0.083897
0.201027
i
i
2%
0.01
0.037692
0.049745
C
0.438100
0.072182
0.001
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
1
R
= 0.81
q
JC
50% Duty Cycle
R (°C/W) C (J/°C)
i
i
20%
0.017316 0.000058
0.022798 0.000439
0.025844 0.001224
0.064579 0.001548
0.117833 0.002684
R
C
R
C
R
n
Junction
Case
1
1
2
10%
5%
0.1
0.013060
0.053003
0.064733
0.136953
2.335824
0.076569
0.059662
0.154481
0.230902
0.042811
2%
C
2
n
Duty Factor = t /t
1
2
Single Pulse
0.000001
Peak T = P
x Z
+ T
JC C
q
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response
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6
NGTB15N120FL2WG
Figure 21. Test Circuit for Switching Characteristics
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7
NGTB15N120FL2WG
Figure 22. Definition of Turn On Waveform
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8
NGTB15N120FL2WG
Figure 23. Definition of Turn Off Waveform
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
PAGE 1 OF 1
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