NFP36060L42T [ONSEMI]
SPM® 3 27 SeriesIntelligent Power Module (IPM) Bridgeless PFC, 600 V, 60 A;型号: | NFP36060L42T |
厂家: | ONSEMI |
描述: | SPM® 3 27 SeriesIntelligent Power Module (IPM) Bridgeless PFC, 600 V, 60 A 功率因数校正 |
文件: | 总11页 (文件大小:589K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NFP36060L42T
SPM) 3 27 Series Intelligent
Power Module (IPM)
Bridgeless PFC, 600 V, 60 A
The NFP36060L42T is an advanced PFC SPM 3 module providing
a fully−featured, high−performance Bridgeless PFC (Power Factor
Correction) input power stage for consumer, medical, and industrial
applications. These modules integrate optimized gate drive of the
built−in IGBTs to minimize EMI and losses, while also providing
multiple on−module protection features including under−voltage
lockout, short−circuit current protection, thermal monitoring, and
fault reporting. These modules also feature high−performance output
diodes and shunt resistor for additional space savings and mounting
convenience.
www.onsemi.com
Features
• UL Certified No. E209024 (UL1557)
• 600 V – 60 A 2−Phase Bridgeless PFC with Integral Gate Drivers
and Protection
• Very Low Thermal Resistance using AlN DBC Substrate
th
• Low−Loss Field Stop 4 Generation IGBT
• Optimized for 20 kHz Switching Frequency
• Built−in NTC Thermistor for Temperature Monitoring
• Built−in Shunt Resistor for Current Sensing
• Isolation Rating of 2500 Vrms / 1 min
3D Package Drawing
(Click to Activate 3D Content)
SPMHC−027
CASE MODFJ
• These Devices are RoHS Compliant
Typical Applications
MARKING DIAGRAM
• 2−Phase Bridgeless PFC Converter (AC 200V Class)
♦ HVAC (Commercial Air−conditioner)
Integrated Power Functions
• 600 V – 60 A 2−Phase Bridgeless PFC for Single−phase AC / DC
Power Conversion (refer to Figure 2)
Integrated Drive, Protection, and System Control Functions
• For IGBTs: Gate−drive Circuit, Short−Circuit Protection (SCP)
Control Circuit, Under−Voltage Lock−Out Protection (UVLO)
• Fault Signaling: Corresponding to UV and SC faults
• Built−in Thermistor: Temperature Monitoring
ON
= ON Semiconductor Logo
NFP36060L42T
XXX
Y
= Specific Device Code
= Lot Number
= Year
• Input Interface: Active−HIGH Interface, works with 3.3 V / 5 V
Logic, Schmitt−Trigger Input
WW
= Work Week
Related Resources
• AN−9041 * Bridgeless PFC SPM 3 Series Design Guide
• AN−9086 * SPM 3 Package Mounting Guidance
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
November, 2019 − Rev. 1
NFP36060L42T/D
NFP36060L42T
PIN CONFIGURATION
(1) VDD
(2) VSS
(3) N.C.
(4) IN(R)
(5) IN(S)
(6) VFO
(7) CFOD
(8) CIN
(21) VAC−
(22) NSENSE
(23) NC
(9) N.C.
(10) N.C.
(24) N
Case Temperature (TC)
(11) N.C.
(12) N.C.
Detecting Point
(25) R
(26) S
(27) PR
(13) N.C.
(14) N.C.
(15) N.C.
(16) N.C.
(17) N.C.
(18) N.C.
DBC Substrate
(19) RTH
(20) VTH
Figure 1. Pin Configuration − Top View
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
(20) VTH
(19) RTH
NTC
Thermistor
(27) PR
D1
D2
(26) S
(25) R
(8) CIN
CIN
CFOD
(7) CFOD
(6) VFO
VFO
Q1
D3
Q2
D4
OUT(S)
OUT(R)
(5) IN(S)
(4) IN(R)
IN(S)
IN(R)
(24) N
(22) NSENSE
(21) VAC−
(2) VSS
(1) VDD
VSS
VDD
Shunt
Resistor
Figure 2. Internal Block Diagram
www.onsemi.com
2
NFP36060L42T
Table 1. PIN DESCRIPTION
Pin Number
Pin Name
VDD
VSS
IN(R)
IN(S)
VFO
CFOD
CIN
Pin Description
1
Common Supply Voltage of IC for IGBTs Driving
Common Supply Ground
2
4
Signal Input for Low−Side R−Phase IGBT
Signal Input for Low−Side S−Phase IGBT
Fault Output
5
6
7
Capacitor for Fault Output Duration Selection
Capacitor (Low−Pass Filter) for Short−Circuit Current Detection
Series Resistor for The Use of Thermistor
Thermistor Bias Voltage
8
19
RTH
VTH
VAC−
NSENSE
N
20
21
Current Sensing Terminal
22
Current Sensing Reference Terminal
Negative Rail of DC−Link
24
25
26
R
Output for R−Phase
S
Output for S−Phase
27
PR
Positive Rail of DC−Link
3, 9~18, 23
N.C.
No Connection
www.onsemi.com
3
NFP36060L42T
Table 2. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Rating
Unit
CONVERTER PART
Vi
Input Supply Voltage
Applied between R − S
264
500
450
500
600
600
60
Vrms
V
Vi
Input Supply Voltage (Surge)
Output Voltage
Applied between R − S
Applied between P − N
Applied between P − N
Breakdown Voltage
(Surge)
VPN
VPN
V
Output Supply Voltage (Surge)
Collector - Emitter Voltage
Repetitive Peak Reverse Voltage
Diode Forward Current
V
(Surge)
VCES
VRRM
IF
V
Breakdown Voltage
V
Tc = 25°C, Tj ≤ 150°C (Note 1)
A
IFSM
Peak Forward Surge Current
Non−Repetitive, 60 Hz Single Half−Sine Wave
(Note 1)
350
A
Ic
Each IGBT Collector Current
VDD = 15 V, Tc = 25°C, Tj ≤ 150°C (Note 1)
60
90
A
A
Icp
Each IGBT Collector Current (Peak)
Tc = 25°C, Tj ≤ 150°C, Under 1 ms Pulse Width
(Note 1)
Pc
PRSH
Tj
Collector Dissipation
Tc = 25°C per IGBT (Note 1)
Tc < 125°C
160
2
W
W
Power Rating of Shunt Resistor
Operating Junction Temperature
−40 ~ 150
_C
CONTROL PART
VDD
VIN
VFO
IFO
VCIN
Tj
Control Supply Voltage
Applied between VDD − VSS
Applied between IN(X), IN(Y) − VSS
Applied between VFO − VSS
Sink Current at VFO pin
20
V
V
Input Signal Voltage
~0.3 ~ VDD + 0.3
~0.3 ~ VDD + 0.3
2
Fault Output Supply Voltage
Fault Output Current
V
mA
V
Current Sensing Input Voltage
Operating Junction Temperature
Applied between CIN − VSS
~0.3 ~ VDD + 0.3
−40 ~ 150
_C
TOTAL SYSTEM
Tc
Module Case Operation Temperature
See Figure 1
−40 ~ 125
−40 ~ 125
2500
_C
_C
Tstg
Viso
Storage Temperature
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute, Connection Pins
to Heat Sink Plate
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These values had been made an acquisition by the calculation considered to design factor.
Table 3. THERMAL RESISTANCE
Symbol
Parameter
Conditions
Min
−
Typ
−
Max
0.78
1.50
0.85
Unit
_C/W
_C/W
_C/W
R
Each IGBT under Operating Condition
Each Boost Diode under Operating Condition
Each Rectifier under Operating Condition
th(j−c)Q
Junction−to−Case Thermal
Resistance (Note 2)
R
−
−
th(j−c)D
R
−
−
th(j−c)R
2. For the measurement point of case temperature (Tc), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please
®
refer to application note AN−9190 (Impact of DBC Oxidation on SPM Module Performance).
www.onsemi.com
4
NFP36060L42T
Table 4. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified.)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
CONVERTER PART
VCE(sat) Collector − Emitter
Saturation Voltage
VDD = 15 V, VIN = 5 V, Ic = 50 A, Tj = 25°C
−
1.55
2.05
V
VFH
VFL
ton
High−Side Diode Forward Voltage IFH = 50 A, Tj = 25°C
Low−Side Diode Forward Voltage IFL = 50 A, Tj = 25°C
−
−
−
−
−
−
−
−
−
2.40
1.20
990
120
930
190
65
2.90
1.60
−
V
V
Switching Characteristics
VPN = 400 V, VDD = 15 V, Ic = 60 A
Tj = 25°C
ns
ns
ns
ns
ns
A
tc(on)
toff
−
VIN = 0 V ´ 5 V, Inductive Load
−
See Figure 3
(Note 3)
tc(off)
trr
−
−
Irr
5
−
ICES
Collector − Emitter Leakage
Current
VCE = VCES
VR = VRRM
−
1
mA
IR
Boost Diode Revers Leakage
Current
−
−
1
mA
RSENSE Collector Sensing Resistor
1.83
2.00
2.17
mW
CONTROL PART
IQDD
Quiescent VDD Supply Current
VDD = 15 V, IN(X), IN(Y) − VSS = 0 V,
Supply Current between VDD and VSS
−
−
−
−
5.00
mA
mA
IPDD
Operating VDD Supply Current
VDD = 15 V, FPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal Input per IGBT,
Supply Current between VDD and VSS
10.00
VFOH
VFOL
Fault Output Voltage
VDD = 15 V, VFO Circuit: 10 kW VCIN = 0 V
to 5 V Pull−up
4.50
−
−
V
VDD = 15 V, IFO = 1 mA
VDD = 15 V
VCIN = 1 V
CIN − VSS
−
0.45
9.8
10.3
−
−
0.50
−
0.50
0.55
13.3
13.8
2.6
−
V
V
VCIN(ref) Short Circuit Trip Level
UVDDD
UVDDR
Supply Circuit Under−Voltage
Protection
Detection Level
Reset Level
V
−
V
VIN(ON) ON Threshold Voltage
VIN(OFF) OFF Threshold Voltage
Applied between IN(X), IN(Y) − VSS
−
V
0.8
25
−
−
V
tFOD
RTH
Fault−Out Pulse Width
CFOD = 33 nF (Note 4)
−
−
ms
kW
kW
Resistance of Thermistor
at TTH = 25°C
at TTH = 85°C
See Figure 4
(Note 5)
50
5.76
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. ton and toff include the propagation delay of the internal drive IC. tc(on) and tc(off) are the switching times of IGBT under the given
gate−driving condition internally. For the detailed information, please see Figure 3.
4. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:
CFOD = 0.89 x 10−6 x tFOD [F]
5. TTH is the temperature of thermistor itself. To know case temperature (Tc), conduct experiments considering the application.
www.onsemi.com
5
NFP36060L42T
100% Ic 100% Ic
trr
Vce
Ic
Ic
Vce
VIN
VIN
ton
toff
tc(on)
tc(off)
10% Ic
VIN(ON)
VIN(OFF)
10% Vce
10% Ic
10% Vce
90% Ic
(a) turn−on
(b) turn−off
Figure 3. Switching Time Definition
Figure 4. R−T Curve of Built−in Thermistor
www.onsemi.com
6
NFP36060L42T
Table 5. RECOMMENDED OPERATIONG CONDITIONS
Value
Typ
−
Min
160
−
Max
264
400
16.5
+1
Symbol
Vi
Parameter
Input Supply Voltage
Supply Voltage
Conditions
Applied between R − S
Unit
Vrms
V
VPN
Applied between P − N
280
15.0
−
VDD
Control Supply Voltage
Control Supply Variation
PWM Input Signal
Applied between VDD − VSS
13.5
−1
V
dVDD / dt
FPWM
Tj
V / ms
kHz
°C
−40°C ≤ Tc ≤ 125°C, −40°C ≤ Tj ≤ 150°C
−
20
−
Junction Temperature
−40
−
150
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
PACKAGE MARKING AND ODERING INFORMATION
Device
Device Marking
Package
Shipping
NFP36060L42T
NFP36060L42T
SPMHC-027
10 Units / Tube
MECHANICAL CHARACTERISTICS AND RATINGS
Value
Min
0
Typ
−
Max
+120
0.72
Parameter
Device Flatness
Conditions
Unit
mm
See Figure 5
Mounting Torque
Mounting Screw: M3
Recommended 0.62 N • m
0.51
0.62
N • m
See Figure 6 (Note 6, 7)
Weight
−
15.00
−
g
6. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat−sink destruction.
7. Avoid one−sided tightening stress. Uneven mounting can cause the DBC substrate of package to be damaged. The pre−screwing torque
is set to 20 ~ 30% of maximum torque rating.
Pre−Screwing: 1 → 2
Final Screwing: 2 → 1
2
1
Figure 5. Flatness Measurement Position
Figure 6. Mounting Screws Torque Order
www.onsemi.com
7
NFP36060L42T
TIME CHARTS OF SPMs PROTECTIVE FUNCTION
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVDDR
a1
a6
UVDDD
Control
Supply Voltage
a3
a4
a2
a7
Output Current
a5
Fault Output Signal
a1: Control supply voltage rises: after the voltage rises UVDDR, the circuits start to operate when the next input is applied.
a2: Normal operation: IGBT ON and carrying current.
a3: Under−voltage detection (UVDDD).
a4: IGBT OFF in spite of control input condition.
a5: Fault output operation starts.
a6: Under−voltage reset (UVDDR).
a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 7. Under−Voltage Protection
Lower Arms
Control Input
b6
b7
Protection
Circuit state
SET
RESET
Internal IGBT
Gate−Emitter Voltage
b4
b3
b2
Internal delay
at protection circuit
SC current trip level
b8
b1
Output Current
SC reference voltage
Sensing Voltage
of Sense Resistor
RC filter circuit
time constant
delay
c5
Fault Output Signal
(With the external over current detection circuit)
b1: Normal operation: IGBT ON and carrying current.
b2: Short−Circuit current detection (SC trigger).
b3: All IGBTs gate are hard interrupted.
b4: All IGBTs turn OFF.
b5: Fault output operation starts with a fixed pulse width.
b6: Input HIGH − IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
b7: Fault output operation finishes, but IGBT doesn’t turn ON until triggering next signal from LOW to HIGH.
b8: Normal operation: IGBT ON and carrying current.
Figure 8. Short−Circuit Current Protection
www.onsemi.com
8
NFP36060L42T
Vac
PFCM
5V line
VTH
RTH
NTC
Thermistor
Temp .
Monitoring
15V line
R4
PR
VDD
VSS
VDD
VSS
C2
C4
S
R
IN(S)
IN(R)
M
C
U
IN(S)
IN(R)
3−Phase
Inverter
Gating S
Gating R
R1
R1
OUT(S)
OUT(R)
5V line
R1
C1
C1
R2
C1
VFO
N
Fault
VFO
C1
CFOD
NSENSE
VAC −
Shunt
Resistor
CFOD
C5
Current
Sensing
for
CIN
CIN
R3
Control
C3
Figure 9. Typical Application Circuit
8. To avoid malfunction, the wiring of each input should be as short as possible (Less than 2 − 3 cm).
9. VFO output is an open−drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor
that makes IFO up to 2 mA.
10.Input signal is active−HIGH type. There is a 5 kW resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits should
be adopted for the prevention of input signal oscillation. RC coupling at each input might change depending on the PWM control scheme
used in the application and the wiring impedance of the application’s printed circuit board. R1C1 time constant should be selected in the range
50 ~ 150 ns (Recommended R1 = 100 W, C1 = 1 nF).
11. To prevent error of the protection function, the wiring related with R3 and C3 should be as short as possible.
12.In the short−circuit current protection circuit, select the R3C3 time constant in the range 3.0 ~ 4.0 ms. Do enough evaluation on the real system
because over−current protection time may vary wiring pattern layout and value of the R3C3 time constant.
13.Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
14.Relays are used in most systems of electrical equipment in industrial application. In these cases, there should be sufficient distance between
the MCU and the relays.
15.The zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair
of control supply terminals (Recommended zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 W).
16.Please choose the electrolytic capacitor with good temperature characteristic in C2. Choose 0.1 ~ 0.2 mF R−category ceramic capacitors
with good temperature and frequency characteristics in C4.
SPM is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
CASE MODFJ
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13563G
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明