NFMECS640A0 [ONSEMI]
ecoSpinTM BLDC motor controller +MCU, 600V;
| 型号： | NFMECS640A0 |
| 厂家： | 
ONSEMI |
| 描述： | ecoSpinTM BLDC motor controller +MCU, 600V |
| 文件： | 总14页 (文件大小：2236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Sensorless BLDC ecoSpin
Motor Controller, with Gate
Drivers
)
)
Arm Cortex −M0+, 600 V, FAN73896
ECS640A
Overview
EcoSpin Motor Controller ECS640A is a 3−phase BLDC
configurable motor control system in package that integrates an
ultra−low−power optimized Arm Cortex−M0+ microcontroller
(Nebo−40−64), three sense amplifiers and a reference amplifier
(NCS20034), three bootstrap diodes, and a high−voltage gate−driver
designed for high−voltage, high−speed operation, with the ability to
drive MOSFETs and IGBTs operating up to 600 V (FAN73896). Six
gate driver outputs provide sink/source of 350 mA/650 mA (typ) gate
current to external power devices. The device includes Hall Sensor
inputs to support either sensored or sensorless operation. Three
independent low−side source pins allow for single or multiple shunt
measurement.
WQFN65
CASE 510CT
MARKING DIAGRAM
XXXXXXXX
AWLYWW
G
Protection functions include under−voltage lockout and inverter
over−current trip with an automatic fault−clear function. An
open−drain fault signal is provided to indicate that a fault condition
has occurred.
Direct Torque & Flux Control (DTFC) firmware is available and
allows optimal motor performance on the Arm Cortex−M0+ platform.
The small footprint and integration make this device a perfect fit
with discrete power devices to maximize scalability across platforms
and to minimize area requirements as power levels scale.
XXXXXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Logo(s)
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
Features
Arm Cortex−M0+ (Nebo−40−64)
40 MHz Clock Frequency
8 kB RAM Memory
64 kB Flash Memory
End Products
HVAC
Home Appliances: Refrigerators, Fabric
Care, Dishwashers
Pumps
600 V Gate Driver (FAN73896)
350 mA/650 mA Sourcing/Sinking Current Driving Capability
General Purpose Three−Phase Motor
Control
4 Sense Amps for Current Sensing (NCS20034)
Integrated Bootstrap Diodes
2
Communication: I C, UART and SPI
Safety Mechanisms Highlight
Over−Current Shutdown Turns Off All Six
Channels
Firmware Available, Sensorless Direct Torque and Flux Control
Max Power Dissipation: 1.8 W
Temperature Range: −40 to 105C
These are Pb−Free Devices
Typical Applications
Three−Phase Brushless DC (BLDC) Sensorless Motor Control
Three−Phase Brushless DC (BLDC) Sensor Based Motor Control
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2023 − Rev. 0
ECS640A/D
ECS640A
NC
GPIO16
HO2
VS2
GPIO8/UART1_TX
GPIO9/UART1_RX/I2C_D
I2C_C
Hall Sensor In
UART (2)
GPIO (5)
BOOTSTRAP DIODES
U PHASE
DRIVER
V PHASE
DRIVER
2
PWM_IN
I C
VB3
HO3
VS3
UART0_TX
UART0_RX
SWDIO
W PHASE
DRIVER
SWCLK
SWDIO
PWM (6)
3−PHASE GATE DRIVER
Arm Cortex−M0+
SWCLK
DEDUG EN
RESET
PROTECTION
CIRCUIT
DBG_EN
RESETN
-
+
DVSS
PWM In
ADC
TEMP
-
+
VLS
-
+
AVDD
SENSE
AMPS
GD_SUPPLY/VDD
MTR
NEUTRAL
BACK EMF
SENSE
CURRENT
SENSE
-
+
TEMP_IN
Mtr_Neutral
NC
LO1
LO2
LO3
CURRENT
SENSE OUT
Figure 1. Block Diagram
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2
ECS640A
N C
V B 2
NC
GD_COM
VSS
GD_RC_IN
GD_CS
GD_FO
SENSE_1_OUT
SENSE_1-
SENSE_1+
DVSS
V S 1
H O 1
V B 1
SENSE_2+
SENSE_2-
SENSE_2_OUT
SENSE_4_OUT/VREF
SENSE_4-
SENSE_4+
VLS
G D _ S U P P L Y / V D D
G P I O 2 1
G P I O 2 0
D V S S
V L S
SENSE_3+
SENSE_3-
SENSE_3_OUT
U_SENSE
H A L L _ U
H A L L _ V
H A L L _ W
V_SENSE
W_SENSE
NC
N C
Figure 2. Application Schematic
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3
ECS640A
NC
GPIO16
1
2
3
4
5
6
7
8
9
51 HO2
50 VS2
GPIO8/UART1_TX
GPIO9/UART1_RX/I2C_D
I2C_C
PWM_IN
49 VB3
48 HO3
47 VS3
UART0_TX
UART0_RX
SWDIO
SWCLK 10
DBG_EN 11
RESETN 12
DVSS 13
VLS 14
AVDD 15
46 GD_SUPPLY/VDD
45 LO1
TEMP_IN 16
Mtr_Neutral 17
NC 18
44 LO2
43 LO3
Figure 3. Pin Connections
PIN FUNCTION DESCRIPTION
Pin #
1
Pin Name
NC
Description
−
2
GPIO16
General Purpose IO (Nebo40−64 PC0 I/O)
3
GPIO8 / UART1_TX
GPIO9 / UART1_RX / I2C_D
I2C_C
General Purpose IO / UART Transmit (Nebo40−64 PB0 I/O)
2
4
General Purpose IO / UART Receive / I C (Nebo40−64 PB1 I/O)
5
I2C (Nebo40−64 PB2 I/O)
6
PWM_IN
PWM Input Signal (Nebo40−64 PB3 I/O)
UART Transmit (Nebo40−64 PB4 I/O)
UART Receive (Nebo40−64 PB5 I/O)
Single Wire Interface Data (Nebo40−64 PB6 I/O)
Single Wire Interface Clock (Nebo40−64 PB7 I/O)
Debug Enable (Nebo40−64 DBG_EN)
mC Reset (Nebo40−64 RESETN)
Ground
7
UART0_TX
UART0_RX
SWDIO
8
9
10
11
12
13
14
SWCLK
DBG_EN
RESETN
DVSS
VLS
3.3 V Supply for Micro−Controller
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4
ECS640A
PIN FUNCTION DESCRIPTION (continued)
Pin #
15
Pin Name
AVDD
Description
Analog Reference Voltage Out
16
TEMP_IN / GP_A_1
Mtr_Neutral / GP_A_0
NC
General Analog Input or Temperature Sensor Input (Nebo40−64 PA0 I/O)
17
Motor Center Tap Input or Bus Voltage Input (Nebo40−64 PA1 I/O)
18
−
−
19
NC
20
W_SENSE
Back EMF Sense Pin − Phase W (requires reduction and filtering)
(Nebo40−64 PA2 I/O)
21
22
V_SENSE
U_SENSE
Back EMF Sense Pin − Phase V (requires reduction and filtering)
(Nebo40−64 PA3 I/O)
Back EMF Sense Pin − Phase U (requires reduction and filtering)
(Nebo40−64 PA4 I/O)
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
SENSE_3_OUT
SENSE_3−
SENSE_3+
VLS
Amplifier 3 Output (Nebo40−64 PA5 I/O)
Amplifier 3−
Amplifier 3+
3.3 V Supply for Amplifier
Amplifier 4+
SENSE_4+
SENSE_4−
SENSE_4_OUT / VREF
SENSE_2_OUT
SENSE_2−
SENSE_2+
DVSS
Amplifier 4−
Sense Amplifier can be used for voltage reference
Amplifier 2 Output (Nebo40−64 PA7 I/O)
Amplifier 2+
Amplifier 2−
Amplifier V
SS
SENSE_1+
SENSE_1−
SENSE_1_OUT
GD_FO
Amplifier 1+
Amplifier 1−
Amplifier 1 Output (Nebo40−64 PA6 I/O)
Fault output (Nebo40−64 PC6 I/O) (FAN73896 FO output)
Analog input for over−current shutdown (FAN73896 CS input)
External RC network input used to define the fault−clear delay
GD_CS
GD_RC_IN
VSS
Gate Driver V
SS
GD_COM
NC
Gate Driver Low Side Common
−
LO3
Low−Side Gate Driver 3 Output
Low−Side Gate Driver 2 Output
Low−Side Gate Driver 1 Output
15 V supply for Gate Driver
LO2
LO1
GD_Supply / VDD
VS3
High−Side Driver 3 Floating Supply Offset Voltage
High−Side Driver 3 Gate Driver Output
High−Side Supply 3 Floating Supply
High−Side Driver 2 Floating Supply Offset Voltage
High−Side Driver 2 Gate Driver Output
−
HO3
VB3
VS2
HO2
NC
VB2
High−Side Driver 2 Floating Supply
High−Side Driver 1 Floating Supply Offset Voltage
High−Side Driver 1 Gate Driver Output
High−Side Driver 1 Floating Supply
15 V Supply for Gate Driver
VS1
HO1
VB1
GD_Supply / VDD
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5
ECS640A
PIN FUNCTION DESCRIPTION (continued)
Pin #
58
Pin Name
GPIO21
Description
General Purpose IO (Nebo40−64 PC5 I/O)
General Purpose IO (Nebo40−64 PC4 I/O)
Ground
59
GPIO20
60
DVSS
61
VLS
3.3 V Supply for Micro−Controller
Hall Sensor Input U (Nebo40−64 PC3 I/O)
Hall Sensor Input V (Nebo40−64 PC2 I/O)
Hall Sensor Input W (Nebo40−64 PC1 I/O)
−
62
HALL_U
63
HALL_V
64
HALL_W
65
NC
Exposed Thermal Pads
See recommended mounting footprint.
MAXIMUM RATINGS
Rating
Symbol
Minimum
−0.3
Maximum
Unit
V
Primary Supply Voltage − MCU
Ground Voltage
V
LS
3.6
DV
−0.3
−
V
SS
Input Voltage Range (Note 1)
Input Pin Current – MCU
Power Dissipation
V
DV − 0.3
V + 0.3
DD
V
IN
SS
I
IN
−10
−
10
mA
W
P
1.8
105
150
D
Ambient Temperature
T
−40
−55
C
C
A
Storage Temperature Range
GATE DRIVER
T
STG
High−Side Floating Offset Voltage
High−Side Floating Supply Voltage
Low−Side and Logic−Fixed Supply Voltage
V
V
V
V
− 25
V + 0.3
B1,2,3
V
V
S
B1,2,3
−0.3
−0.3
− 25
625.0
25.0
+ 0.3
B
V
DD
V
HO
V
High−Side Floating Output Voltage V
V
V
HO1,2,3
LO1,2,3
S1,2,3
S1,2,3
Low−Side Floating Output Voltage V
Input Voltage
V
LO
−0.3
−0.3
−0.3
500
−
V
DD
+ 0.3
V
V
IN
5.5
V
Fault Output Voltage (FO)
High−Side Input Pulse Width
Allowable Offset Voltage Slew Rate
BOOTSTRAP DIODE
V
FO
V
DD
+ 0.3
V
PW
−
Ns
V/ns
HIN
dV /dt
s
50
Maximum Repetitive Reverse Voltage
Forward Current
V
−
−
−
600
0.50
1.50
V
A
A
RRM
I
F
Forward Current (Peak)
I
FP
CURRENT SENSOR AMPLIFIER
Supply Voltage (V – V
)
V (Pin33)
DD
−0.3
3.6
V
DD
SS
ESD Capability, Human Body Model (Note 2)
ESD Capability, Charged Device Model (Note 2)
V
V
−
−
2000
1000
V
V
HBM
CDM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating: 150 mA per JEDEC standard: JESD78
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6
ECS640A
THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol
Value
24.6
4.9
Unit
C/W
C/W
Thermal Resistance – Junction to Ambient (Note 4)
Thermal Resistance – Junction to Case
Q
JA
Q
JC
3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2
2
4. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
3.0
Max
3.6
85
Unit
V
Input Supply Voltage
Ambient Temperature
GATE DRIVER
V
LS
T
A
−40
C
High−Side Floating Supply Voltage
High−Side Floating Supply Offset Voltage
Low−Side and Logic Fixed Supply Voltage
High−Side Output Voltage
V
V
+ 10
V + 20
s1,2,3
V
V
V
V
V
V
V
V
V
B1,2,3
s1,2,3
V
6 – V
12
600
20
s1,2,3
DD
V
DD
HO1,2,3
V
V
V
B1,2,3
s1,2,3
Low−Side Output Voltage
V
COM
V
V
LO1,2,3
DD
Fault Output Voltage (FO)
V
V
V
V
V
FO
SS
SS
SS
DD
Current−Sense Pin Input Voltage
Logic Input Voltage (HIN1,2,3 and LIN1,2,3)
Low−Side Driver Return
5
CS
V
IN
5
5
COM
−5
BOOTSTRAP DIODE
Forward Voltage
V
−
−
−
−
V
F
Reverse−Recovery Time
t
rr
ns
CURRENT SENSOR AMPLIFIER
Operating Supply Voltage (V – V
)
V
s
1.8
3.6
V
DD
SS
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
Parameter
= 3.3 V, T = 305C
Test Conditions
Symbol
Min
Typ
Max
Unit
MCUV
DDIO
A
Digital I/O
Logic Input Low Threshold
Logic Input High Threshold
Internal Pull−up Resistor
Internal Pull−down Resistor
Logic Output Low Level
Logic Output High Level
Pin Leakage
V
0.3
−
−
−
−
−
−
−
−
−
0.7
−
V
IL
DD
V
IH
V
DD
R
R
V
35
35
−
kW
kW
V
PU
PD
OL
OH
−
I
I
= 4 mA at V
= 1.8 V
0.5
−
LOAD
DDIO
= 4 mA at V
= 1.8 V
V
V
− 0.5
V
LOAD
DDIO
DD
I
−1
1
mA
LEAK
Flash Memory
Read Access Time
T
−
−
−
−
−
−
40
20
10
−
ns
ms
ACC
Program Time
T
PROG
Page/Mass Erase Time
Data Retention
T
−
ms
ERASE
T
10
Years
RET
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ECS640A
ELECTRICAL CHARACTERISTICS (continued)
Parameter Test Conditions
Flash Memory
Flash Endurance Erase Cycles
Symbol
Min
Typ
Max
Unit
at 25C
at 85C
100k
10k
−
−
−
−
Cycles
Power−On RESET and BROWN−OUT
Power−on Voltage Trip Point
Rising
V
1.540
1.455
1.525
1.5
−
−
−
−
1.635
1.635
1.71
V
V
POR_R
Falling
Rising
Falling
V
POR_F
Brownout Trip Point
V
BO_R
V
1.685
BO_F
High Speed RC Oscillator (HSOSC)
Oscillator Frequency
40 MHz
F
38.80
40.00
3%
2
41.20
MHz
HSOSC
Temperature Drift
Temp Co = +3% Cold and –3% Hot
DF
HSOSC
HSOSC_SU
−
−
−
−
−
−
Oscillator Start−up Time
T
ms
Current Consumption
I
350
mA
HSOSC
Low Power RC Oscillator (LPOSC)
Oscillator Frequency (Fast Mode)
Trimmed
F
F
−
10.24
640
−
−
−
−
kHz
Hz
LPOSC
Oscillator Frequency (Slow Mode) Trimmed
Temperature Drift
LPOSC
DF
−
−
6%
0.41
LPOSC
Oscillator Start−up Time
(Fast Mode)
T
ms
ms
LPOSC_SU
Oscillator Start−up Time
(Slow Mode)
T
−
1.4
−
LPOSC_SU
Current Consumption (Fast Mode)
I
I
−
−
420
95
−
−
nA
nA
LPOSC
Current Consumption
(Slow Mode)
LPOSC
High Speed Crystal Oscillator
Crystal Frequency
F
8
32
40
MHz
HSXTAL
Low Power Crystal Oscillator
Crystal Frequency
F
−
−
32.768
285
−
−
kHz
nA
LPXTAL
I
LPXTAL
Current Consumption
Analog Comparators
Common Mode Input Range
V
CMIR
0.2
−
V
DDIO
0.5
−
V
Response Time
T
COMP
−
200
−
ns
Analog to Digital Converter (ADC)
Sample Clock Frequency
−0.5dBFS Power Bandwidth
F
0.01
50
−
−
−
2
20
−
MHz
kHz
pF
ADCCLK
F
BW
Input Capacitance
C
−
IN
(when 1:1 divider is selected
(single−ended)) (Note 5)
Gain Error (Note 6)
Offset Error (Note 6)
E
−
−
0.75
15
−
−
%
GAIN
E
LSB
OFFSET
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ECS640A
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Analog to Digital Converter (ADC)
Integral Non−Linearity (Note 7)
Differential, gain bypass,
1 V reference
INL
−2.5
−
2.5
LSB
Differential, 1X gain, 1 V reference
Differential, 10X gain, 1 V reference
Differential, 1/4 gain, 1 V reference
Single−ended, 1X gain,
−
−
−
−
2.5
3.5
2
−
−
−
−
2
1 V reference, 2X V Range
ref
(Note x6)
Differential Non−Linearity
(Note 7)
Differential, gain bypass,
1 V reference
DNL
−
−
1.5
LSB
Differential, 1X gain, 1 V reference
Differential, 10X gain, 1 V reference
Differential, 1/4 gain, 1 V reference
Single−ended, 1X gain,
−
−
−
−
1.5
2.0
1.5
1.5
−
−
−
−
1 V reference, 2X V Range
ref
(Note x6)
GATE DRIVER
Low−Side Power Supply Section
Quiescent V Supply Current
V
= 0 V or 5 V, EN = 0 V
I
QDD
−
−
250
550
400
750
mA
mA
DD
LIN1,2,3
Operating V Supply Current
C
Value
= 1 Nf, f
= 20 kHz, rms
I
PDD
DD
LOAD
LIN1,2,3
V
Supply Under−Voltage
V
DD
V
DD
V
DD
= Sweep
= Sweep
= Sweep
V
V
9.7
9.2
−
11.0
10.5
0.5
12.0
11.4
−
V
V
V
DD
DDUV+
DDUV−
DDHYS
Positive−Going Threshold
V
DD
Supply Under−Voltage
Negative−Going Threshold
V
DD
Supply Under−Voltage
V
Lockout Hysteresis
Bootstrapped Power Supply Section
V
Supply Under−Voltage
V
V
V
= Sweep
V
V
9.7
9.2
−
11.0
10.5
0.5
12.0
11.4
−
V
V
V
BS
BS1,2,3
BS1,2,3
BS1,2,3
BSUV+
BSUV−
BSHYS
Positive−Going Threshold
V
BS
Supply Under−Voltage
= Sweep
= Sweep
Negative−Going Threshold
V
BS
Supply Under−Voltage
V
Lockout Hysteresis
Offset Supply Leakage Current
V
V
= V
= 600 V
I
LK
−
−
10
80
mA
mA
mA
S1,2,3
S1,2,3
Quiescent V Supply Current
= 0 V or 5 V, EN = 0 V
I
QBS
10
50
BS
HIN1,2,3
Operating V Supply Current
C
= 1 nF, f
= 20 kHz,
I
PBS
200
320
480
BS
LOAD
HIN1,2,3
rms Value
Gate Driver Output Section
High−Level Output Voltage,
IO = 0 mA (No Load)
IO = 0 mA (No Load)
V
−
−
100
MV
OH
V
− V
BIAS
O
Low*Level Output Voltage, V
V
−
−
100
mV
mA
O
OL
Output HIGH Short−Circuit Pulse
V
O
= 15 V, V = 0 V with PW 10 ms
I
O+
250
350
−
IN
Current
Output LOW Short−Circuit Pulsed
V
O
= 0 V, V = 5 V with PW 10 ms
I
500
650
−
mA
V
IN
O−
Current
Allowable Negative V Pin
V
−
−9.8
−9.0
S
S
Voltage for HIN Signal
Propagation to HO
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ECS640A
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Logic Input Section
Logic “1” Input Voltage HIN1,2,3,
LIN1,2,3
V
2.5
−
−
−
−
0.8
143
2
V
V
IH
Logic “0” Input Voltage HIN1,2,3,
LIN1,2,3
V
IL
Logic Input Bias Current
(HO = LO = HIGH)
V
V
= 5 V
= 0 V
I
I
77
−
100
−
mA
mA
kW
IN
IN+
Logic Input Bias Current
(HO = LO = LOW)
IN
IN−
Logic Input Pull−Up Resistance
R
35
50
65
IN
Enable Control Section (EN)
Enable Positive−Going Threshold
V
V
2.5
−
−
−
−
0.8
50
2
V
V
EN+
EN−
EN+
Voltage
Enable Negative−Going
Threshold Voltage
Logic Enable “1” Input Bias
Current
V
V
= 5 V (Pull−Down = 150 kW)
I
15
−
33
−
mA
mA
kW
EN
Logic Enable “0” Input Bias
Current
= 0 V
I
EN−
EN
Logic Input Pull−Down Resistance
Over−Current Protection Section
R
100
150
333
EN
Over−Current Detect Positive
V
V
450
500
440
550
MV
mV
CSTH+
CSTH−
CSHYS
Threshold
Over−Current Detect Negative
Threshold
−
−
Over−Current Detect Hysteresis
Short−Circuit Input Current
Soft Turn−Off Sink Current
Fault Output Section
V
−
5
60
10
40
−
mV
mA
V
CSIN
= 1 V
I
15
55
CSIN
I
25
mA
SOFT
RCIN Positive−Going Threshold
V
V
2.7
3.3
2.6
3.9
V
V
RCINTH+
RCINTH−
RCINHYS
Voltage
RCIN Negative−Going Threshold
Voltage
−
−
RCIN Hysteresis Voltage
RCIN Internal Current Source
Fault Output Low Level Voltage
RCIN On Resistance
V
−
3
0.7
5
−
V
mA
V
C
= 2 nF
I
7
RCIN
RCIN
V
CS
= 1 V, I = 1.5 mA
V
FOL
−
0.2
75
0.5
100
170
650
FO
I
I
= 1.5 mA
R
50
90
350
W
RCIN
DSRCIN
Fault Output On Resistance
Turn−On Propagation Delay
= 1.5 mA
R
130
500
W
FO
DSFO
V
V
= V
= 5 V,
= 0 V,
t
ON
ns
LIN1,2,3
S1,2,3
HIN1,2,3
= 0 V
Turn−Off Propagation Delay
V
V
= V
t
350
500
650
ns
LIN1,2,3
S1,2,3
HIN1,2,3
OFF
= 0 V
Turn−On Rise Time
Turn−Off Fall Time
V
V
= V
= V
= 5 V
= 0 V
t
R
20
10
50
30
100
80
ns
ns
ns
LIN1,2,3
LIN1,2,3
HIN1,2,3
HIN1,2,3
t
F
Enable LOW to Output Shutdown
Delay
t
400
500
600
EN
CS Pin Leading−Edge Blanking
t
400
650
850
850
ns
ns
CSBLT
Time
Time from CS Triggering to FO
From V
= 1 V to FO Turn−Off
t
−
1300
CSC
CSFO
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10
ECS640A
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Fault Output Section
Time from CS Triggering to
From V
= 1 V to Starting Gate
t
−
850
250
1300
330
ns
ns
CSC
CSOFF
Low−Side Gate Outputs Turn−Off
Turn−Off
Input Filtering Time (Note 7)
(HINx, LINx, EN)
t
170
FLTIN
Fault−Clear Time
t
−
230
−
1.3
320
−
2.35
400
50
ns
ns
ns
FLTCLR
Dead Time
DT
Dead−Time Matching
(All Six Channels) (Note 8)
MDT
Delay Matching (All Six Channels)
(Note 9)
MT
−
−
−
50
ns
ns
Output Pulse−Width Matching
(Note 10)
PW > 1 ms
PM
50
100
IN
BOOTSTRAP DIODES
Forward Voltage
I
I
= 0.1 A, T = 25C
V
F
−
−
2.5
80
−
−
V
F
A
Reverse−Recovery Time
= 0.1 A, T = 25C
t
rr
ns
F
A
CURRENT SENSOR AMPLIFIER (V = 1.8 V, T = +25C)
S
A
Input Characteristics
Input Offset Voltage
Offset Voltage Drift
Input Bias Current
V
−
−
−
2.0
1
5.0
6.0
−
mV
mV/C
pA
OS
DV /DT
OS
I
−
IB
Input Offset Current
Channel Separation
Input Resistance
I
−
1
−
pA
OS
XTLK
−
100
1
−
dB
R
C
−
−
TW
pF
IN
IN
Input Capacitance
−
1.2
80
−
−
Common Mode Rejection Ratio
V
= V to V – 0.6 V
CMRR
70
65
−
dB
IN
SS
DD
V
IN
= V + 0.2 V to V – 0.6 V
−
SS
DD
Output Characteristics
Open Loop Voltage Gain
A
75
70
5
92
92
−
−
dB
mA
V
R = 10 kW
VOL
L
R = 2 kW
L
Output Current Capability
Output Voltage High
Output Voltage Low
Sourcing
Sinking
I
8
−
SC
10
1.75
1.7
−
14
−
V
1.798
1.78
7
−
R = 10 kW
L
OH
R = 2 kW
L
−
V
100
100
mV
R = 10 kW
L
OL
R = 2 kW
L
−
20
Noise Performance
Voltage Noise Density
Current Noise Density
Dynamic Performance
Gain Bandwidth Product
Slew Rate at Unity Gain
f = 1 kHz
f = 1 kHz
e
−
−
20
−
−
nV/
pA/
N
i
N
0.1
GBWP
SR
−
−
−
−
−
−
5
6
−
−
−
−
−
−
MHz
Rising Edge, R = 2 kW, A = +1
V/ms
L
V
Falling Edge, R = 2 kW, A = +1
9
L
V
Phase Margin
Gain Margin
Settling Time
R = 10 kW, C = 5 pF
L
Y
53
8
L
m
m
s
R = 10 kW, C = 5 pF
L
A
dB
ms
L
V
= 1 V , Gain = 1, C = 20 pF,
t
1.8
O
pp
L
Settling time to 0.1%
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11
ECS640A
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Dynamic Performance
Total Harmonics Distortion +
Noise
THD+N
−
−
0.005
0.025
−
−
%
V
= 1 V , R = 2 kW, A = +1,
pp L V
O
f = 1 kHz
V
O
= 1 V , R = 2 kW, A = +1,
pp
L
V
f = 10 kHz
Power Supply
Power Supply Rejection Ratio
Quiescent Current
PSRR
80
100
275
−
dB
No load, per channel
I
−
575
mA
DD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2
2
6. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate.
7. The minimum width of the input pulse should exceed 500 ns to ensure the filtering time of the input filter is exceeded.
8. MDT is defined as |DT1−DT2| referenced to 0.
9. MT is defined as an absolute value of matching delay time between High−side and Low−side.
10.PM is defined as an absolute value of matching pulse−width between Input and Output.
ORDERING INFORMATION
†
Device
Package
Shipping
NFMECS640A0
WQFN65 13 10, 0.5P
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Arm, Cortex, and the Arm logo are registered trademarks of Arm Limited (or its subsidiaries) in the EU and/or elsewhere.
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12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
GAQFN65 13x10, 0.5P
CASE 510CT
ISSUE C
DATE 14 DEC 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
= Assembly Location
WL = Wafer Lot
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXXXXXXX
XXXXXXXXX
AWLYWW
A
Y
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON25842H
GAQFN65 13x10, 0.5P
PAGE 1 OF 1
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