NDT3055 [ONSEMI]
N 沟道增强型场效应晶体管 60V，4A，100mΩ;
| 型号： | NDT3055 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管 60V，4A，100mΩ 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
N-Channel Enhancement
D
Mode Field Effect Transistor
S
D
NDT3055
G
General Description
SOT−223
CASE 318H−01
These N−Channel enhancement mode power field effect transistors
are produced using onsemi’s proprietary, high cell density, DMOS
technology. This very high density process is especially tailored
to minimize on−state resistance and provide superior switching
performance. These devices are particularly suited for low voltage
applications such as DC motor control and DC/DC conversion where
fast switching, low in−line power loss, and resistance to transients are
needed.
MARKING DIAGRAM
AYW
3055G
G
Features
1
• 4 A, 60 V
A
Y
= Assembly Location
= Year
♦ R
= 0.100 W @ V = 10 V
GS
DS(ON)
• High Density Cell Design for Extremely Low R
W
3055
G
= Work Week
= Specific Device Code
= Pb−Free Package
DS(ON)
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• This is a Pb−Free Device
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
PINOUT DIAGRAM
A
Symbol
Parameter
Drain−Source Voltage
Value
60
Unit
V
D
V
DSS
GSS
V
Gate−Source Voltage
20
V
I
D
Drain Current
A
− Continuous (Note 1a)
4
− Pulsed
25
D
S
G
P
D
Maximum Power Dissipation
(Note 1a)
W
3
(Note 1b)
(Note 1c)
1.3
1.1
ORDERING INFORMATION
†
Device
NDT3055
Shipping
T ,
STG
Operating and Storage Temperature Range −65 to 150
°C
Package
J
T
4000 / Tape & Reel
SOT−223
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Max
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
42
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
12
°C/W
q
JC
© Semiconductor Components Industries, LLC, 1998
1
Publication Order Number:
September, 2022 − Rev. 2
NDT3055/D
NDT3055
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
60
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
63
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 48 V, V = 0 V
−
−
−
−
−
−
−
−
10
100
100
−100
mA
DSS
GS
= 48 V, V = 0 V, T = 125°C
GS
J
I
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
= 20 V, V = 0 V
nA
nA
GSSF
DS
I
= −20 V, V = 0 V
GSSR
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
2
1.5
−
3
2.4
0.084
0.14
−
4
3
V
V
DS
V
DS
V
GS
V
GS
V
GS
V
DS
= V , I = 250 mA
GS(th)
GS D
= V , I = 250 mA, T = 125°C
GS
D
J
R
DS(ON)
Static Drain−Source On−Resistance
= 10 V, I = 4 A
0.1
0.18
−
W
D
= 10 V, I = 4 A, T = 125°C
−
D
J
I
On−State Drain Current
= 10 V, V = 10 V
15
−
A
S
D(ON)
DS
g
FS
Forward Transconductance
= 15 V, I = 4 A
6
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 30 V, V = 0 V, f = 1.0 MHz
−
−
−
250
100
30
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
V
= 25 V, I = 1.2 A,
−
−
−
−
−
−
−
10
18
37
30
9
25
50
65
60
15
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 50 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
g
V
DS
= 40 V, I = 4 A, V = 10 V
nC
nC
nC
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
2.3
2.6
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = 2.5 A (Note 2)
I
−
−
−
2.5
1.2
A
V
S
V
SD
V
GS
0.85
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
Typical R
using the board layouts shown below on FR−4 PCB in a still air environment:
q
JA
c. 110°C/W when
a. 42°C/W when
b. 95°C/W when
mounted on a 0.066 in
pad of 2 oz copper.
2
2
mounted on a 0.00123
mounted on a 1 in
2
in pad of 2 oz Cu..
pad of 2 oz copper.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
NDT3055
TYPICAL ELECTRICAL CHARACTERISTICS
3
15
12
V
= 5.5 V
GS
V
GS
= 10 V
8.0 V
7.0 V
2.5
2
6.0 V
6.5 V
9
6
7.0 V
6.0 V
1.5
1
8.0 V
5.0 V
10.0 V
3
0
4.5 V
4
0.5
0
1
2
3
5
0
4
8
12
16
20
I , DRAIN CURRENT (A)
D
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2
0.4
0.3
0.2
I
D
= 2 A
I
V
= 4 A
D
= 10 V
GS
1.6
1.2
0.8
0.4
T = 125°C
A
0.1
0
T = 25°C
A
−50 −25
0
25
50
75
100 125
150
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
8
10
1
V
GS
= 0 V
V
DS
= 10 V
T = −55°C
A
25°C
T = 125°C
A
125°C
25°C
6
0.1
−55°C
4
0.01
0.001
0.0001
2
0
0
0.2
0.4
0.6
0.8
1
1.2
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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3
NDT3055
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
15
12
9
1000
I
D
= 4 A
V
DS
= 10 V
500
C
iss
20 V
40 V
200
100
Coss
6
3
Crss
50
f = 1 MHz
20
10
V
GS
= 0 V
0
0
3
6
9
12
15
1
4
0.1
0.3
V
10
30 60
Q , GATE CHARGE (nC)
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
10
80
60
40
20
SINGLE PULSE
R
LIMIT
R
= 110°C/W
DS(ON)
q
JA
100 ms
1 ms
10 ms
100 ms
1 s
10 s
DC
T = 25°C
A
3
1
0.3
0.1
V
GS
= 10 V
SINGLE PULSE
= 110°C/W
R
q
JA
0.03
0.01
T = 25°C
A
0
1
0.001
0.1 0.2
0.5
2
5
10
30 60 100
0.01
0.1
1
10
100 300
V
DS
, DRAIN−SOURCE VOLTAGE (V)
SINGLE PULSE TIME (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
0.5
0.2
0.1
0.1
R
R
(t) = r(t) x R
= 110°C/W
q
q
q
JA
JA
JA
0.05
0.05
0.02
0.01
0.02
0.01
P(pk)
t1
t2
0.005
Single Pulse
T − T = P x R (t)
q
JA
J
A
0.002
0.001
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
t , TIME (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
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