NDC7003P [ONSEMI]
双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω;
| 型号： | NDC7003P |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω PC 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Dual P-Channel,
POWERTRENCH)
D2
S1
D1
G2
S2
G1
NDC7003P
TSOT23 6−Lead
CASE 419BL
General Description
These dual P−Channel Enhancement Mode Power Field Effect
Transistors are produced using onsemi’s proprietary Trench
Technology. This very high density process has been designed to
minimize on−state resistance, provide rugged and reliable
performance and fast switching. This product is particularly suited to
low voltage applications requiring a low current high side switch.
MARKING DIAGRAM
XXX MG
G
1
Features
• −0.34 A, −60 V
R
R
= 5 W @ V = −10 V
GS
DS(ON)
XXX = Specific Device Code
= 7 W @ V = −4.5 V
DS(ON)
GS
M
= Date Code
• Low Gate Charge
G
= Pb−Free Package
(Note: Microdot may be in either location)
• Fast Switching Speed
• High Performance Trench Technology for Low R
DS(ON)
• SUPERSOTt−6 Package: Small Footprint (72% smaller than
standard SO−8); Low Profile (1 mm Thick)
• This is a Pb−Free Device
PINOUT
4
5
6
3
2
1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Drain Current
Ratings
−60
Unit
V
V
DSS
V
GSS
20
V
I
D
A
SOT−6 (SUPERSOTt−6)
− Continuous (Note 1a)
− Pulsed
−0.34
−1
P
D
Power Dissipation for Single
Operation
W
ORDERING INFORMATION
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
†
Shipping
Package
Device
3000 /
Tape & Reel
TSOT−23−6
(Pb−free)
NDC7003P
T , T
Operating and Storage
Temperature Range
−55 to +150
°C
J
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RθJA
Thermal Resistance,
Junction to Ambient (Note 1a)
130
°C/W
RθJC
Thermal Resistance,
Junction to Case (Note 1)
60
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
December, 2021 − Rev. 3
NDC7003P/D
NDC7003P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−60
V
V
DSS
D
GS
DBV
DT
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−57
DSS
D
J
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
V
V
= −48 V, V = 0 V
−1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = −250 mA
−1
−1
−1.9
3.2
−3.5
V
GS(th)
DS
GS
D
DV
Gate Threshold Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
mV/°C
GS(th)
D
DT
J
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −0.34 A
1.2
1.5
1.9
5
W
DS(ON)
D
= −4.5 V, I = −0.25 A
7.5
10
D
= −10 V, I = 0.34 A, T = 125°C
D
J
I
On−State Drain Current
= −10 V, V = −10 V
A
D(on)
DS
g
FS
Forward Transconductance
= −10 V, I = −0.34 A
700
mS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −25 V, V = 0 V, f = 1.0 MHz
66
13
pF
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
6
rss
R
V
V
= 15 mV, f = 1.0 MHz
11.2
W
G
GS
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
= −25 V, I = −1 A, V = −10 V,
3.2
10
8
6.4
20
16
2
ns
d(on)
DD
D
GS
R
= 6 W
GEN
t
r
t
d(off)
t
1
f
Q
V
DS
= −25 V, I = −0.34 A, V = −10 V
1.6
0.3
0.3
2.2
nC
g
D
GS
Q
gs
gd
Q
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.34 A (Note 2)
I
−0.34
−1.4
A
V
S
V
SD
V
GS
−0.8
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
1a
1b
1c
a) 130°C/W when
b) 140°C/W when
c) 180°C/W when
mounted on a minimum
pad.
2
2
mounted on a 0.125 in
mounted on a 0.005 in
pad of 2oz copper.
pad of 2oz copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
www.onsemi.com
2
NDC7003P
TYPICAL CHARACTERISTICS
2.2
1
0.8
0.6
0.4
0.2
0
V
GS
= −10V
V
GS
= −3.0V
−4.5V
−4.0V
2
1.8
1.6
1.4
1.2
1
−6.0V
−3.5V
−3.5V
−3.0V
−4.0V
−4.5V
−6.0V
−10V
0.8
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
I , Drain Current (A)
D
V
DS
, Drain−Source Voltage (V)
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
Figure 1. On−Region Characteristics
1.8
1.6
1.4
1.2
1
5
I
V
= −0.34 A
I = −0.17 A
D
D
= −10 V
GS
4
3
2
1
0
T
A
= 125°C
0.8
0.6
0.4
T
A
= 25°C
−50 −25
0
25
50
75
100 125 150
2
4
6
8
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Figure 3. On−Resistance Variation with Temperature
10
1
1
T
A
= −55°C
V
DS
= −5 V
V
GS
= 0 V
25°C
0.8
0.6
0.4
0.2
0
125°C
T
A
= 125°C
0.1
25°C
0.01
0.001
−55°C
0.0001
0.2
1
2
3
4
5
0.4
0.6
0.8
1
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 5. Transfer Characteristics
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3
NDC7003P
TYPICAL CHARACTERISTICS
10
8
100
f = 1 MHz
= 0 V
V
DS
= −25 V
I
= −0.34 A
D
−30V
V
GS
80
−48V
C
ISS
6
60
40
20
0
4
C
RSS
C
OSS
2
0
0
0.4
0.8
1.2
1.6
2
0
10
20
30
40
50
60
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
8
10
1
Single Pulse
R
T
= 180°C/W
q
JA
= 25°C
A
RDS(ON) LIMIT
10ms
6
1ms
10ms
100ms
4
0.1
1s
V
= −10 V
GS
DC
Single Pulse
2
R
T
A
= 180°C/W
q
JA
= 25°C
0.01
0
1
10
100
0.001
0.01
0.1
1
10
100
t , Time (s)
1
V
DS
, Drain to Source Voltage (V)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
R
R
(t) = r(t) * R
q
JA
= 180°C/W
q
q
JA
JA
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P(pk)
t1
t2
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t /t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t , Time (sec)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
(Note: Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.)
POWERTRENCH is a registered trademark and SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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