NCV8401 [ONSEMI]
Self-Protected Low Side Driver with Temperature and Current Limit; 与温度和电流限制自保护低端驱动器
| 型号： | NCV8401 |
| 厂家： | 
ONSEMI |
| 描述： | Self-Protected Low Side Driver with Temperature and Current Limit |
| 文件： | 总10页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV8401
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401 is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
http://onsemi.com
V
I MAX
D
(Limited)
DSS
(Clamped)
R
TYP
DS(ON)
42 V
23 mW @ 10 V
33 A*
Features
*Max current may be limited below this value
depending on input conditions.
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
Drain
Overvoltage
Protection
Gate
Input
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• RoHs Compliant
• AEC-Q101 Qualified
• NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
• This is a Pb−Free Device
Source
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
MARKING
DIAGRAM
1
2
3
YWW
xxx
xxxxxG
DPAK
CASE 369C
STYLE 2
Y
= Year
= Work Week
= Device Code
= Pb−Free Package
1
2
3
= Gate
= Drain
= Source
WW
xxx
G
ORDERING INFORMATION
†
Device
Package
Shipping
NCV8401DTRKG
DPAK
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 7
NCV8401/D
NCV8401
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Symbol
Value
42
Unit
V
V
DSS
DGR
V
42
V
(R = 1.0 MW)
GS
Gate−to−Source Voltage
Drain Current − Continuous
Total Power Dissipation
V
"14
V
GS
I
Internally Limited
D
P
W
D
@ T = 25°C (Note 1)
1.1
2.0
A
@ T = 25°C (Note 2)
A
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
R
R
1.6
110
60
°C/W
q
JC
JA
JA
q
q
Single Pulse Drain−to−Source Avalanche Energy
(V = 25 Vdc, V = 5.0 Vdc, I = 3.65 Apk, L = 120 mH, R = 25 W, T = 150°C) (Note 3)
Jstart
E
AS
800
mJ
DD
GS
L
G
Load Dump Voltage (V = 0 and 10 V, R = 2.0 W, R = 3.0 W, t = 400 ms)
V
LD
65
V
GS
I
L
d
Operating Junction Temperature
T
−40 to 150
−55 to 150
°C
°C
J
Storage Temperature
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″ square FR4 board
(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
3. Not subject to production testing.
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8401
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V = 0 Vdc, I = 250 mAdc)
V
(BR)DSS
42
42
46
44
50
50
Vdc
GS
D
(V = 0 Vdc, I = 250 mAdc, T = 150°C) (Note 4)
GS
D
J
Zero Gate Voltage Drain Current
(V = 32 Vdc, V = 0 Vdc)
I
mAdc
DSS
1.5
6.5
5.0
DS
GS
(V = 32 Vdc, V = 0 Vdc, T = 150°C) (Note 4)
DS
GS
J
Gate Input Current
I
50
100
mAdc
GSSF
(V = 5.0 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
DS(on)
DS(on)
(V = V , I = 1.2 mAdc)
1.0
1.8
5.0
2.0
Vdc
DS
GS
D
Threshold Temperature Coefficient
−mV/°C
Static Drain−to−Source On−Resistance (Note 5)
R
R
mW
mW
V
(V = 10 Vdc, I = 5.0 Adc, T @ 25°C)
23
43
29
55
GS
D
D
J
J
(V = 10 Vdc, I = 5.0 Adc, T @ 150°C) (Note 4)
GS
Static Drain−to−Source On−Resistance (Note 5)
(V = 5.0 Vdc, I = 5.0 Adc, T @ 25°C)
28
50
34
60
GS
D
D
J
J
(V = 5.0 Vdc, I = 5.0 Adc, T @ 150°C) (Note 4)
GS
Source−Drain Forward On Voltage
(I = 5 A, V = 0 V)
V
0.80
1.1
SD
S
GS
SWITCHING CHARACTERISTICS (Note 4)
Turn−ON Time (10% V to 90% I )
ms
t
41
129
16
50
150
25
IN
D
ON
V
= 0 V to 5 V, V = 25 V
DD
IN
D
I
= 1.0 A, Ext R = 2.5 W
G
Turn−OFF Time (90% V to 10% I )
t
OFF
IN
D
Turn−ON Time (10% V to 90% I )
t
ON
IN
D
V
IN
I
= 0 V to 10 V, V = 25 V
DD ,
= 1.0 A, Ext R = 2.5 W
D
G
Turn−OFF Time (90% V to 10% I )
t
164
1.27
0.36
180
IN
D
OFF
V/ms
Slew−Rate ON (20% V to 50% V
)
−dV /dt
DS ON
DS
DS
V
= 0 to 10 V, V = 12 V,
DD
in
R = 4.7 W
L
Slew−Rate OFF (80% V to 50% V
)
dV /dt
DS OFF
DS
DS
SELF PROTECTION CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Current Limit
I
Adc
V
= 5.0 V, V = 10 V
25
11
30
16
35
21
LIM
GS
DS
V
GS
= 5.0 V, T = 150°C (Note 4)
J
V
= 10 V, V = 10 V
30
18
35
25
40
28
GS
DS
V
GS
= 10 V, T = 150°C (Note 4)
J
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 5.0 V (Note 4)
T
150
175
15
200
°C
°C
°C
°C
GS
LIM(off)
V
GS
= 5.0 V
DT
LIM(on)
LIM(off)
Temperature Limit (Turn−off)
Thermal Hysteresis
V
= 10 V (Note 4)
T
150
165
15
185
GS
V
GS
= 10 V
DT
LIM(on)
GATE INPUT CHARACTERISTICS (Note 4)
Device ON Gate Input Current
I
mA
mA
mA
V
= 5 V I = 1.0 A
50
400
0.1
0.7
0.6
2.0
GON
GS
GS
D
V
V
= 10 V I = 1.0 A
D
Current Limit Gate Input Current
I
GCL
= 5 V, V = 10 V
GS
DS
V
= 10 V, V = 10 V
GS
DS
Thermal Limit Fault Gate Input Current
I
GTL
V
GS
GS
= 5 V, V = 10 V
DS
V
= 10 V, V = 10 V
DS
ESD ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)
J
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
V
4000
400
4. Not subject to production testing.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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3
NCV8401
TYPICAL PERFORMANCE CURVES
100
10,000
T
= 25°C
Jstart
T
= 25°C
Jstart
10
1,000
100
T
Jstart
= 150°C
T
Jstart
= 150°C
1
10
100
10
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
Current vs. Load Inductance
100
10,000
T
Jstart
= 25°C
T
= 25°C
Jstart
10
1,000
100
T
= 150°C
Jstart
T
Jstart
= 150°C
1
1
10
1
100
Time in Clamp (ms)
Time in Clamp (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
45
40
35
30
25
20
15
10
6 V 7 V 8 V 9 V
−40°C
10 V
25°C
30
25
20
15
10
5 V
4 V
100°C
150°C
3 V
5
0
V
GS
= 2.5 V
5
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
(V)
3.0
3.5
4.0
V
DS
(V)
V
GS
Figure 6. On−state Output Characteristics
at 255C
Figure 7. Transfer Characteristics (VDS = 10 V)
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4
NCV8401
TYPICAL PERFORMANCE CURVES
45
80
70
60
50
40
30
20
10
150°C, V = 5 V
GS
I
D
= 3 A
40
35
30
25
20
15
10
150°C
150°C, V = 10 V
GS
100°C
100°C, V = 5 V
GS
100°C, V = 10 V
GS
25°C, V = 5 V
25°C
GS
25°C, V = 10 V
GS
−40°C, V = 5 V
GS
−40°C, V = 10 V
GS
−40°C
3
4
5
6
7
8
9
10
1
3
5
7
9
V
GS
(V)
I (A)
D
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
45
40
35
30
25
20
15
2.00
1.75
1.50
1.25
1.00
−40°C
25°C
V
= 5 V
GS
100°C
0.75
0.50
150°C
V
GS
= 10 V
60
−40 −20
0
20
40
80 100 120 140
5
6
7
8
9
10
T (°C)
V
GS
(V)
Figure 10. Normalized RDS(on) vs. Temperature
(ID = 5 A)
Figure 11. Current Limit vs. Gate−Source
Voltage (VDS = 10 V)
45
40
35
30
25
20
15
100
10
150°C
V
GS
= 10 V
1
0.1
0.01
100°C
25°C
V
= 5 V
GS
0.001
−40°C
0.0001
−40 −20
0
20
40
60
80 100 120 140
10
15
20
25
(V)
30
35
40
T (°C)
J
V
DS
Figure 12. Current Limit vs. Junction
Temperature (VDS = 10 V)
Figure 13. Drain−to−Source Leakage Current
(VGS = 0 V)
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5
NCV8401
TYPICAL PERFORMANCE CURVES
1.2
1.1
1.0
0.9
0.8
1.0
0.9
−40°C
0.8
25°C
0.7
100°C
0.6
150°C
0.5
0.4
0.7
0.6
−40 −20
0
20
40
60
80 100 120 140
1
2
3
4
5
6
7
8
9
10
T (°C)
I (A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature (ID = 1.2 mA, VDS = VGS
Figure 15. Source−Drain Diode Forward
)
Characteristics (VGS = 0 V)
200
150
100
2.0
1.5
1.0
−dV /d
DS t(on)
t
d(off)
dV /d
DS t(off)
t
f
50
0
0.5
0
t
r
t
d(on)
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage (VDD = 25 V, ID = 5 A, RG = 0 W)
(VDD = 25 V, ID = 5 A, RG = 0 W)
125
100
75
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−dV /d
, V = 10 V
DS t(on) GS
t
, V = 10 V
d(off) GS
t
, V = 5 V
d(off) GS
t , V = 10 V
f
GS
t , V = 5 V
f
GS
50
−dV /d
, V = 5 V
DS t(on) GS
t , V = 5 V
r
GS
t
, V = 5 V
t
, V = 10 V
d(on) GS
d(on) GS
25
0
t , V = 10 V
r
GS
dV /d
, V = 5 V
dV /d
DS t(off) GS
, V = 10 V
DS t(off) GS
0.2
0
0
500
1000
(W)
1500
2000
0
500
1000
(W)
1500
2000
R
R
G
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance (VDD = 25 V, ID = 5 A)
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
(VDD = 25 V, ID = 5 A)
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6
NCV8401
TYPICAL PERFORMANCE CURVES
250
225
200
175
150
125
100
75
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
50
25
0
100 200
300
400
500
600
700
800
2
COPPER HEAT SPREADER AREA (mm )
Figure 20. RqJA vs. Copper Area
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
Single Pulse
0.00001
0.001
1E−06
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH (sec)
Figure 21. Transient Thermal Resistance
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7
NCV8401
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
−
DUT
G
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
90%
VIN
td(ON)
tr
td(OFF)
tf
10%
IDS
Figure 23. Resistive Load Switching Waveforms
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8
NCV8401
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
RG
VDD
DUT
G
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 25. Inductive Load Switching Waveforms
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9
NCV8401
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NCV8401/D
相关型号：
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