NCV7692D10R2G [ONSEMI]

Current Controller for Automotive LED Lamps;
NCV7692D10R2G
型号: NCV7692D10R2G
厂家: ONSEMI    ONSEMI
描述:

Current Controller for Automotive LED Lamps

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NCV7692  
Current Controller for  
Automotive LED Lamps  
The NCV7692 is a device which uses an external NPN bipolar  
device combined with feedback resistor(s) to regulate a current for use  
in driving LEDs. The target application for this device is automotive  
rear combination lamps. A single driver gives the user flexibility to  
add single channels to multichannel systems. A dedicated dimming  
feature is included via the PWM input pin. The individual driver is  
turned off when an open load or short circuit is detected.  
LED brightness levels are easily programmed using an external  
resistor in series with the bipolar transistor. The use of the resistor  
gives the user the flexibility to use the device over a wide range of  
currents. Multiple strings of LEDs can be operated with a single  
NCV7692 device. Set back power limit reduces the drive current  
during overvoltage conditions.  
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8
1
SOIC−8  
CASE 751AZ  
MARKING DIAGRAM  
8
The device is available in a SOIC−8 package.  
NCV7692  
ALYW  
Features  
G
Constant Current Output for LED String Drive  
1
External Bipolar Device for Wide Current Range Flexibility  
With BCP56 Transistor, Can Drive Multiple Strings Concurrently  
(ref. Datasheet Info)  
IC (Pb−Free)  
NCV7692 = Specific Device Code  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
External Programming Current Resistor  
Pulse Width Modulation (PWM) Control  
Negative Temperature Coefficient Current Control Option  
Open LED String Diagnostic  
Short−Circuit LED String Diagnostic  
Multiple LED String Control  
Overvoltage Set Back Power Limitation  
SOIC−8 Package  
AEC−Q100 Qualified and PPAP Capable  
These are Pb−Free Devices  
PINOUT DIAGRAM  
VS  
PWM BASE  
FLTS FB  
NTC GND  
SC  
Applications  
Rear Combination Lamps (RCL)  
Daytime Running Lights (DRL)  
Fog Lights  
Center High Mounted Stop Lamps (CHMSL) Arrays  
Turn Signal and Other Externally Modulated Applications  
General Automotive Linear Current LED Driver  
ORDERING INFORMATION  
Device  
NCV7692D10R2G  
Package  
Shipping  
SOIC−8  
3000 /  
(Pb−Free)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
April, 2018 − Rev. 0  
NCV7692/D  
NCV7692  
VS  
Short Circuit Sense Interface  
Base Drive  
SC  
BASE  
FB  
Feedback Circuit  
GND  
Reference “Short Circuit Detection with 4 or more channels” Figure for circuit details  
Figure 1. Application Diagram  
VBAT  
14 V  
C1  
0.1 μF  
NCV7692  
R2  
10 kΩ  
R3  
10 kΩ  
VS  
PWM BASE  
SC  
BCP56  
PWM  
Control  
Logic  
FLTS  
NTC  
FB  
C2  
0.1 μF  
R1  
1 Ω  
GND  
Figure 2. Microprocessor Controlled Application Diagram  
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2
NCV7692  
Thermal  
Short-Circuit Detection  
Monitoring  
+
-
SC  
Supply  
Monitoring  
2 V  
VDD  
VS  
Ref  
VS  
VDD  
Slew  
Rate  
BASE  
PWM  
1k  
Control  
Current  
Limitation  
Protection  
120k  
-
-
FB  
+
1.15V  
+
-
FLTS  
NTC  
VREF/2 or  
NTC/20  
+
TSD  
Reference  
selection  
Open Load  
Detection  
0.4 V to 2.1 V  
152 mV  
NTC / 10  
GND  
Figure 3. Block Diagram  
PIN FUNCTION DESCRIPTION  
Pin #  
Symbol  
VS  
Description  
1
2
3
4
Automotive Battery input voltage  
Logic input for output on/off control. Pull high for output on.  
PWM  
FLTS  
NTC  
A capacitor to ground sets the time for open circuit, short circuit, and overtemperature detection.  
Optional input for Negative Temperature Coefficient performance.  
Ground this pin if Negative Temperature Coefficient is not used.  
5
6
7
8
GND  
FB  
Ground  
Feedback pin for current regulation  
Base Drive for external transistor (16 mA [min])  
LED Short Circuit Detection Input. Ground pin if not used.  
BASE  
SC  
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NCV7692  
MAXIMUM RATINGS  
(Voltages are with respect to GND, unless otherwise specified)  
Rating  
Symbol  
Value  
Unit  
Supply Voltage (VS)  
DC  
V
S
V
−0.3 to 50  
50  
Peak Transient  
High Voltage Pins (PWM, SC)  
Low Voltage Pins (FB, NTC)  
Low Voltage Pin (BASE)  
V
−0.3 to (VS + 0.3)  
−0.3 to 3.6  
V
V
V
HV  
V
LV  
V
BASE  
−0.3 to 3.6 or VS + 0.6,  
whichever is lower  
Fault Input / Output (FLTS)  
V
FLTS  
−0.3 to (VS + 0.3)  
*Internally limited  
charge voltage  
V
Junction Temperature, T  
T
−40 to +150  
260 peak  
°C  
°C  
J
J
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C  
(Note 1)  
T
P
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. For additional information, please see or download the ON Semiconductor Soldering and Mounting Techniques Reference Manual,  
SOLDERRM/D and Application Note AND8003/D.  
ATTRIBUTES  
Characteristic  
Symbol  
Value  
Value  
ESD Capability (Note 2)  
Human Body Model  
HBM  
MM  
4.0  
150  
1.0  
kV  
V
Machine Model  
Charge Device Model  
CDM  
kV  
Moisture Sensitivity  
Storage Temperature  
MSL  
2
T
S
−55 to +150  
°C  
Package Thermal Resistance − SOIC−8 (Note 3)  
Junction–to–Board  
R
129  
179  
100  
°C/W  
°C/W  
°C/W  
Y
JB  
Junction–to–Ambient  
R
q
JA  
Junction–to–Lead, R  
R
JL  
Y
JL  
2. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)  
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)  
Latch up current maximum rating: 150 mA per JEDEC starndard: JESD78.  
3. Values represent typical still air steady−state thermal performance on 1 oz. copper FR4 PCB with 650 mm copper area.  
2
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4
 
NCV7692  
ELECTRICAL CHARACTERISTICS  
(4.5 V < VS < 18 V, C  
= 0.1 mF, R1 = 1 W, Transistor NPN = BCP56, −40°C T 150°C, unless otherwise specified) (Note 4)  
FLTS  
J
Characteristic  
General Parameters  
Conditions  
Min  
Typ  
Max  
Unit  
Supply Current in normal condition  
VS = 14 V, PWM = High, Base Current subtracted  
VS = 14 V, PWM = 0  
3.0  
1.6  
1.8  
4.0  
2.5  
2.8  
mA  
mA  
mA  
Supply Current in fault condition  
VS = 14 V, PWM = High  
V
FLTS  
FLTS Clamp (5.0 V typ.)  
Under Voltage Lockout  
Under Voltage Lockout Hysteresis  
Thermal Shutdown  
VS rising  
3.5  
4.0  
200  
170  
15  
4.5  
V
mV  
°C  
°C  
ms  
(Note 5)  
(Note 5)  
(Note 5)  
150  
190  
Thermal Hysteresis  
Thermal Shutdown Delay  
Base Current Drive  
10  
23  
36  
Output Source Current  
Output Pull−Down Resistance  
Unity Gain Bandwidth  
Amplifier Trans−conductance  
Programming  
BASE = 1 V, FB = 0 V  
16  
0.5  
25  
1
30  
2
mA  
kW  
PWM = 0 V, BASE = 1 V, FB = 0 V  
100  
30  
kHz  
mA/mV  
FB Regulation Voltage  
Under Voltage Lockout < VS < Over Voltage Fold  
Back Threshold 1  
mV  
142  
54  
152  
76  
162  
100  
50  
VS > Over Voltage Fold Back Threshold 1  
VS > Over Voltage Fold Back Threshold 2  
25  
38  
VS Overvoltage Fold Back Threshold 1 (Note 6)  
18.5  
19.5  
700  
20.5  
V
VS Overvoltage Fold Back Threshold 1  
Hysteresis  
mV  
VS Overvoltage Fold Back Threshold 2 (Note 6)  
29.8  
31.4  
700  
33.0  
V
VS Overvoltage Fold Back Threshold 2  
Hysteresis  
mV  
Open Load Timing  
VS Open Load Disable Threshold  
VS rising  
VS falling  
4.85  
4.70  
5.10  
4.95  
5.35  
5.20  
V
V
FLTS Charge Current  
PWM = 5 V, FB = 0 V, VS = 14 V  
1
2
3
mA  
kW  
V
FLTS Pull Down Resistor  
400  
1.00  
600  
1.15  
800  
1.30  
FLTS Threshold  
(Output Deactivation Threshold)  
FLTS Clamp  
VS = 18 V, (Note 7) PWM = 5 V, Charge Current  
activated (Above this clamp voltage Charge current  
rolls off to 0)  
4
5
6
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%  
parametrically tested in production.  
5. Guaranteed by design.  
6. VS can operate up to 45 V in fold back condition.  
7. Device tested at 18 V. Upper limit of 6 V applies across the VS input supply range, but the maximum rating for FLTS (−0.3V to VS to −0.3V)  
must be considered for all system designs especially at the minimum extreme of VS = 4.5 V.  
8. NTC = 400 mV is > NTC detection level and is a higher impedance than when operating within the detection level.  
9. Evaluated at VS = 14V, NTC grounded or 1.6 V, 1 W sense resistor.  
10.Evaluated at VS = 14V, 1.0 V NTC 2.1 V, 1 W sense resistor  
Guaranteed by design at VS = 14V, 0.4 V NTC 1.0 V, 1 W sense resistor.  
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5
NCV7692  
ELECTRICAL CHARACTERISTICS  
(4.5 V < VS < 18 V, C  
= 0.1 mF, R1 = 1 W, Transistor NPN = BCP56, −40°C T 150°C, unless otherwise specified) (Note 4)  
FLTS  
J
Characteristic  
Short Circuit  
Conditions  
Min  
Typ  
Max  
Unit  
Short Circuit Detection Threshold  
Short Circuit Output Current  
PWM  
VS − 1.7  
VS − 2  
8
VS − 2.3  
16  
V
Current out of the SC pin  
mA  
Input High Threshold  
Input Low Threshold  
0.7  
2.2  
V
V
Hysteresis  
0.35  
120  
V
Input Pull−down Resistor  
Temperature Compensation  
NTC Attenuation  
50  
190  
kW  
0.4 V < NTC < 2.1 V  
1/10  
Regulation Offset (referenced to FB)  
NTC = 1.6 mV Typ, 0.4 V < NTC < 2.1 V, VS = 14 V  
−2  
−7  
+2  
+7  
%
mV  
NTC Input Pull−down Resistor  
NTC = 150 mV (low impedance)  
NTC = 400 mV (high impedance) (Note 8)  
15  
22  
1
31  
kW  
MW  
NTC Detection Level  
AC Characteristics  
LED Current rise time  
LED Current fall time  
Propagation Delay  
170  
220  
300  
mV  
10% / 90% criterion, PWM rising (Note 9)  
90% / 10% criterion, PWM falling (Note 9)  
50% criterion (Note 9)  
0.25  
0.25  
1.0  
1.4  
1.0  
1.5  
2.0  
2.2  
ms  
ms  
ms  
PWM rising to Iout  
B/T  
Propagation Delay  
50% criterion (Note 9)  
1.0  
1.8  
ms  
PWM falling to Iout  
B/T  
PWM Propagation Delay Delta  
LED Current rise time  
LED Current fall time  
Propagation Delay  
|(Falling time) − (Rising time)| (Note 9)  
10% / 90% criterion, PWM rising (Note 10)  
90% / 10% criterion, PWM falling (Note 10)  
50% criterion (Note 10)  
0.3  
1.2  
2.0  
1.5  
1.0  
1.8  
3.2  
4.2  
ms  
ms  
ms  
ms  
0.25  
0.25  
PWM rising to Iout  
B/T  
Propagation Delay  
50% criterion (Note 10)  
1.0  
3.4  
ms  
PWM falling to Iout  
B/T  
PWM Propagation Delay Delta  
Delay Time VS to BASE  
|(Falling time) − (Rising time)| (Note 10)  
1.2  
4
3.4  
9
ms  
ms  
VS rising through UVLO to BASE going high  
through 0.5 V  
C
= 50 pF, R  
= 680 W  
BASE  
BASE  
PWM = VS, SC = floating, FB = GND, NTC = GND  
Open Load Blanking Delay  
Short Circuit Blanking Time  
Power−Up Blanking Time  
FLTS capacitor charge time not included  
25  
10  
10  
42  
23  
23  
70  
36  
36  
ms  
ms  
ms  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%  
parametrically tested in production.  
5. Guaranteed by design.  
6. VS can operate up to 45 V in fold back condition.  
7. Device tested at 18 V. Upper limit of 6 V applies across the VS input supply range, but the maximum rating for FLTS (−0.3V to VS to −0.3V)  
must be considered for all system designs especially at the minimum extreme of VS = 4.5 V.  
8. NTC = 400 mV is > NTC detection level and is a higher impedance than when operating within the detection level.  
9. Evaluated at VS = 14V, NTC grounded or 1.6 V, 1 W sense resistor.  
10.Evaluated at VS = 14V, 1.0 V NTC 2.1 V, 1 W sense resistor  
Guaranteed by design at VS = 14V, 0.4 V NTC 1.0 V, 1 W sense resistor.  
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NCV7692  
APPLICATIONS INFORMATION  
Output Drive  
Detailed Operating Description  
The NCV7692 device provides low−side current drive via  
an external bipolar transistor. The low voltage (152 mV)  
current sense threshold allows for maximum dropout  
voltage in the system. Dimming is performed using the  
dedicated PWM pin on the IC. Average output current is  
directly related to the intensity of the LED (or LED string).  
Figure 4 shows the typical output drive configuration. A  
feedback loop regulates the current through the external  
LED. U1 monitors the voltage across the external sense  
resistor (R1). When the voltage exceeds the 152 mV  
reference, the output of U1 goes from high to low sending  
a signal the buffer (U2) decreasing the base drive to the  
external transistor (BCP56). For loads above 150 mA, a  
PZT651device (replacing the BCP56) is recommended for  
stable operation.  
VBAT  
NCV7692  
U2  
BASE  
BCP56  
FB  
-
+
R1  
1 Ω  
U1  
152 mV  
GND  
Figure 4. Output Drive Configuration  
FLTS Reporting  
FLTS reports three fault conditions (by going high) all of  
which force the output off.  
Latched off conditions can be reinitiated by a toggle of the  
PWM pin or a power down of the supply (VS).  
Open Circuit (latched)  
Thermal Shutdown (thermal hysteresis)  
Short Circuit (latched)  
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NCV7692  
Open Load Detection  
If the open load feature is not used, FLTS should be tied  
to GND. Grounding FLTS disables open load detection.  
Short circuit detection and thermal shutdown functions  
remain active but are not reported externally. The BASE pin  
is actively held low in this case.  
Faulted output strings due to open load conditions  
sometimes require the complete shutdown of illumination  
within an automotive rear lighting system. The NCV7692  
provides that feature option.  
There are two open load detections schemes in the  
NCV7692. These are OR’d conditions.  
VBAT  
1. In normal regulation, the IC monitors the FB  
voltage (typ 152 mV). When this voltage falls by  
50% (to typ 76 mV), an open circuit is detected  
and a current starts to charge FLTS to flag open  
load, once FLTS voltage crosses the output  
deactivation threshold the driver is switched off  
resulting in a latched off−state. When regulating  
via the NTC pin, the open load detection threshold  
is V(NTC)/20.  
2. During open load, the base current increases to try  
and satisfy the regulation loop. Internal circuitry  
monitors the base current. When the Base Current  
Drive reaches the Output Source Current (typ 25  
mA) threshold, an open circuit is flagged and the  
driver is latched off.  
NCV7692  
VS Open  
VS  
Load Disable  
VS  
Monitoring  
Output  
Drive  
U2  
FLTS Clamp  
5 V  
BASE  
FB  
Over-  
current  
detect  
BCP56  
FLTS  
Charge  
Current  
2mA  
Blanking  
Timer  
(42 μs)  
R1  
1 Ω  
FLTS  
U1  
-
GND  
+
C2  
100nF  
600 kΩ  
Two schemes are used should the rise in base  
current create a regulated voltage on the feedback  
pin (FB). If this occurs scheme #1 would not  
detect the open load.  
Output Deactivation  
Threshold 1.15 V  
Open load can be disabled by connecting FLTS to GND.  
When an open load is detected, the output turns off, and  
can be turned back on again by a toggle of the PWM pin or  
a power down of the supply (VS).  
Figure 5. Open Load Detection Circuitry  
Table 1. OPEN LOAD DETECTION  
Open Load  
(VS > Open Load Disable Threshold)  
FLTS  
BASE  
No Open Load  
Normal Operation  
(with FLTS capacitor)  
(held low)  
regulation  
No Open Load  
Grounded  
regulation  
FB 1/2 regulation  
(with FLTS capacitor)  
FLTS starts charging  
Held low via internal pull−down  
resistor after time−out.  
BASE Current > 25 mA [typ]  
(with FLTS capacitor)  
FLTS starts charging  
Held low via internal pull−down  
resistor after time−out.  
FB 1/2 regulation  
Grounded  
Grounded  
regulation  
regulation  
BASE Current > 25 mA [typ]  
Multiple String Open Load Consideration  
In multi−string applications with high−beta transistors,  
the feedback voltage from individual strings is averaged, so  
one defective LED string does not always lead to the open  
load detection.  
One of the ways to improve the open load detection  
capability is more precise external BASE current limitation.  
An example of the circuit with one extra resistor and PNP  
bipolar is shown in Figure 6.  
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NCV7692  
back to the microprocessor regardless of which channel it  
occurs on. Note the NCV7692 device uses a feature which  
allows any channel to charge the FLTS capacitor due to its  
definition at a charge current value much higher than the  
discharge value (2 mA versus 600 kW [typ]). Additional  
NCV7692 Single Current Controller devices device may  
share the same common FLTS capacitors in systems  
requiring multiple ICs.  
BCP56  
~9.3mA  
BCP56  
14mV  
~0.1mA  
45mV  
1R5  
~10mA  
max.  
NCV 7692  
30mA  
1R5  
SC  
BASE  
FB  
9.3mA  
47R  
NCV7692  
FLTS Clamp5 V  
29.5mV  
V(FB) < 76 mV −>  
−> FLTS current source active −>  
−> LEDs off  
to microprocessor  
FLTS Charge  
Current  
2mA  
GND  
BC856  
Figure 6. Improved Open Load Detection  
for Multiple Strings  
FLTS  
GND  
U1  
System Voltage and Overvoltage Fold−back  
-
Low voltage system operation is typically limited by head  
room in the LED string. Because of this limitation, detection  
of open loads is inactive below VS = typ 5.1 V (Open Load  
Disable voltage). There is also an upper limitation. The  
current roll off feature of the part resets the loop at a lower  
reference voltage and consequential lower current for VS  
above the Overvoltage Fold−back threshold on VS, (typ  
19.5 V). The open load Detection circuitry is inactive for VS  
above this Overvoltage Fold−back threshold voltage.  
C2  
100nF  
+
600 kΩ  
Output  
Deactivation  
Threshold  
1.15 V  
Figure 7. Open Drain Output Interface to  
Microprocessor  
FLTS  
NCV7692  
Open Load Timing  
The timing for open load detection is programmed using  
the FLTS pin. The NCV7692 device regulates a 152 mV  
reference point (Figure 5 on the feedback pin (FB)). When  
the voltage decreases (half of the FB Regulation Voltage) or  
the base current reaches the internal 25 mA (typ) limit for  
42 ms the timer associated with the FLTS pin starts by  
charging the capacitor with a 2 mA current source. When the  
voltage on FLTS exceeds the output Deactivation Threshold  
(1.15 V (typ)), the BASE pin is pulled low and is held low  
by an internal pulldown resistor.  
GND  
NCV7692  
FLTS Clamp5 V  
to microprocessor  
FLTS Charge  
Current  
2mA  
A 42 ms blanking time during power up ensures there is  
enough time for power−up to eliminate false open−load  
detections. The slow FLTS discharge (600 kW [typ]) load  
(and resultant long time to restart LED drive) eliminates  
flickering effects.  
FLTS  
U1  
-
C1  
100nF  
+
600 kΩ  
Output  
FLTS Interface  
Figure 7 shows an open−drain logic level FET serving as  
a buffer to the microprocessor.  
GND  
Deactivation  
Threshold  
1.15 V  
Note – Only one timing  
capacitor and interface  
Figure 8 shows the proper wired “OR” connection for  
applications which require all channels to latch−off with an  
open load condition. An open load condition will be reported  
transistor are required for  
system operation.  
Figure 8. FLTS Wired OR to Microprocessor  
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NCV7692  
Temperature Compensation  
a positive temperature coefficient. The regulation loop  
voltage on NTC should be sufficiently higher than the  
220 mV reference voltage to avoid interactions. A typical  
regulation voltage of 1.6 V is suggested.  
The overall tolerance specification for the NTC  
functionality is broken down into two components.  
1. Absolute error. A 2% tolerance is attributed to  
the expected value as a result of internal circuitry  
(most predominantly the 1/10 resistor divider).  
2. Reference error. A 7mV offset mismatch in the  
circuitry referenced to FB.  
This provides a part capability of (V(NTC)/10) x 0.98  
−7mV < V(FB) < (V(NTC)/10) x 1.02 + 7mV.  
In addition to the temperature coefficient of the Zener diode  
(D1), a PTC resistor (R2) can be used to enhance the effect  
of the overall negative temperature coefficient. A positive  
temperature coefficient resistor at the top of the resistor  
divider creates a negative temperature coefficient at the  
resistor divider output. Alternatively, a negative temperature  
coefficient resistor for R3 would have the same effect.  
The NCV7692 device typically operates with a zero TC  
output current source. The NTC (Negative Temperature  
Coefficient) pin provides an alternative for an output current  
which degrades with temperature as defined by the  
designer’s external components.  
Zero TC operation is provided when the NTC pin is  
connected to GND. When a negative temperature  
coefficient output current is desired to compensate for  
effects of external LED illumination, the setup shown in  
Figure 9 will provide the function. On the NTC pin, a  
comparator detects when the voltage is higher than typ  
220 mV, and this voltage is used to provide the feedback  
reference voltage for the current feedback regulation loop.  
The zener provides a reference voltage for the negative  
temperature coefficient NTC device through an external  
divider. Be careful of your choice of the zener diode as the  
temperature coefficients of the devices have a wide variation  
with the low voltage zeners having a high negative  
temperature coefficient and the high voltage zeners having  
VS  
VS  
R1  
BASE  
PTC  
+t0  
R2  
-
FB  
+
NTC  
D1  
SZMM3Z4V7T1G  
4.7V (typ)  
0.4 V to 2.1V  
R3  
H
L
152mV  
H
L
+
-
220mV  
Figure 9. Negative Temperature Compensation Operation  
www.onsemi.com  
10  
 
NCV7692  
Short Circuit Detection  
(S1). The comparator connected between VS and SC is  
referenced to a voltage 2.0 V down from VS. A detection  
voltage less than 2.0 V will toggle a signal from the  
comparator to the output drive buffer turning off output  
drive (BASE) to the external bipolar transistor. An initial  
blanking time of 23 ms is used during turn−on of the device  
to ignore false detections. This is beneficial during normal  
operation and when the device is used without a  
microprocessor input (PWM) interface as in Figure 10.  
Switching off the Base−driver in case of SC, will also  
make the FLTS charge active, indicating the error to the  
microprocessor.  
The short circuit (SC) pin of the device is used as an input  
to detect a fault when the collector of the external bipolar  
transistor is shorted to the battery voltage. The threshold  
voltage detection is referenced 2.0 volts down from the VS  
pin. A voltage of less than 2.0 volts between VS and SC will  
latch the device off. The PWM pin must be toggled or UVLO  
event must occur to reinitiate a turn−on. The detection time  
for this event is swift to protect the external transistor. To  
maintain operation during transient events down to 4.5 V,  
the short circuit detection circuitry is inactive below  
VS = typ 5.1 V. (the same Open Load Disable voltage as  
used to disable Open load detection). Otherwise false short  
circuit events could be falsely triggered due to  
non−conduction of the external LEDs during transients.  
Figure 10 shows a short circuit event modeled as a switch  
When having multiple channels an isolation might be  
needed to provide the appropriate voltage back to the SC pin  
during short circuit. Figure 11 shows how external diodes  
can provide this feature.  
Short Citcuit  
VBAT  
14 V  
SC  
Short Circuit  
Detection  
Threshold  
2V  
R2  
NCV7692  
10 kΩ  
-
Blanking  
Timer  
(23 μs)  
VS  
+
C1  
100 nF  
Output  
Drive  
FLTS Clamp  
5 V  
U2  
to microprocessor  
BASE  
BCP56  
FLTS Charge  
Current  
2mA  
FB  
LATCH  
R1  
1 Ω  
FLTS  
GND  
C2  
100 nF  
600 kΩ  
Short Circuit Detection is disabled below 5.1 V (typ).  
Figure 10. Short Circuit Detection  
www.onsemi.com  
11  
 
NCV7692  
Short Circuit Detection with 4 or more Channels  
Figure 12 shows an implementation which will work  
provided the drop across the loads is < 3.4 V. This limitation  
is due to the SC minimum specification of VS − 1.7 V. This  
setup saves the user 2 diodes.  
Interfacing the short circuit detection for multiple  
channels with one NCV7692 driver system is done easily  
using diodes or a diode resistor combination depending on  
your system requirements.  
Figure 11 shows the implementation using 4 individual  
diodes which will work for all applications.  
VBAT  
14 V  
D2  
D1  
D3  
D4  
Q1  
Q2  
Q3  
Q4  
I
B(Q2)  
IB(Q3)  
IB(Q4)  
IB(Q1)  
BCP56  
BCP56  
BCP56  
BCP56  
R2  
10 kΩ  
R3  
10 kΩ  
R6  
10 kΩ  
R7  
10 kΩ  
R5  
1 Ω  
R8  
1 Ω  
SC  
BASE  
FB  
R1  
1 Ω  
R4  
1 Ω  
GND  
Figure 11. Short Circuit Detection with 4 or more Channels  
VBAT  
14 V  
R6, 680 Ω  
R12, 680 Ω  
R7, 680 Ω  
D3  
R13, 680 Ω  
D1  
D4  
Q1  
Q2  
Q3  
Q4  
I
B(Q2)  
IB(Q3)  
IB(Q4)  
IB(Q1)  
BCP56  
BCP56  
BCP56  
BCP56  
R2  
10 kΩ  
R3  
10 kΩ  
R6  
10 kΩ  
R7  
10 kΩ  
R5  
1 Ω  
R8  
1 Ω  
SC  
R1  
1 Ω  
R4  
1 Ω  
BASE  
FB  
GND  
Figure 12. Saving Two Diodes for Short Circuit Protection  
www.onsemi.com  
12  
 
NCV7692  
Thermal ShutDown  
Stoplight / Tail Light Application  
The thermal shut down circuit checks the internal junction  
temperature of the device. When the internal temperature  
rises above the Thermal shutdown threshold for greater than  
the thermal shutdown filter time (23 ms [typ]) the device is  
switched off. The filter is implemented to achieve a clean  
detection.  
Switching off the Base−driver in case of TSD, will also  
make the FLTS charge active, indicating the error to the  
microprocessor.  
Automotive applications have a need to drive the RCL  
(Rear Combination Light). Combining the NCV7692 with  
the NCV1455B device accomplishes that task. Figure 14  
shows the interface of the two ICs using an additional diode  
(D2). The STOP input signal provides a signal to the  
NCV7692 which will provide a 100% duty cycle output to  
the LED strings whenever STOP is high. When only TAIL  
is high, a modulated duty cycle input is provided to the PWM  
input and also provides power to the NCV7692 and the LED  
string. The NCV1455B can provide up to 200 mA (albeit  
with a 2.5 V drop at 200 mA) of output drive current.  
If your application exceeds the current capability of the  
NCV1455B (200mA) two extra diodes will be required as  
shown in Figure 15. In this case, the current flow through the  
LEDs will come from STOP and/or TAIL eliminating the  
high current from the NCV1455B.  
Applications  
Direct Drive without direct battery connection:  
Some applications may not allow for a direct connection  
of VS to the battery voltage. These applications require a  
connection with a smart−FET. Figure 13 highlights this  
setup.  
MRA4003T3G  
VBAT  
14 V  
C3  
0.1 μF  
PWM  
Control  
NCV7692  
R2  
10 kΩ  
C1  
100 nF  
R3  
10 kΩ  
VS  
PWM BASE  
FLTS  
FB  
NTC GND  
SC  
BCP56  
C2  
0.1 μF  
R1  
1 Ω  
Figure 13. SmartFET Control  
www.onsemi.com  
13  
 
NCV7692  
D1, MRA4003T3G  
D2, MRA4003T3G  
STOP  
(VBAT  
)
C3  
0.1 μF  
D3, SBAV70L  
TAIL  
GND  
D4, SBAV70L  
NCV7692  
R2  
10 kΩ  
C1  
100 nF  
VS  
SC  
BCP56  
PWM BASE  
NCV1455B  
R3  
10 kΩ  
FLTS  
NTC  
FB  
GND  
TRIG  
VCC  
DIS  
C2  
0.1 μF  
R1  
1 Ω  
GND  
OUT THRES  
RESET  
CV  
Figure 14. Stoplight / Taillight Application  
D1, MRA4003T3G  
D2, MRA4003T3G  
STOP  
(VBAT  
)
C3  
0.1 μF  
D3, SBAV70L  
D4, SBAV70L  
TAIL  
GND  
NCV7692  
R2  
10 kΩ  
C1  
100 nF  
VS  
SC  
BCP56  
PWM BASE  
NCV1455B  
R3  
10 kΩ  
FLTS  
NTC  
FB  
GND  
TRIG  
VCC  
DIS  
C2  
0.1 μF  
R1  
1 Ω  
GND  
OUT THRES  
RESET  
CV  
Figure 15. Stoplight / Taillight Application at higher currents  
www.onsemi.com  
14  
NCV7692  
Figure 16: Application Diagram with no microprocessor.  
R1 is used to limit current in the event of an open circuit on  
one of the strings.  
Figure 18: Open Circuit.  
It shows the change in BASE drive which occurs with an  
open circuit in one of the strings. The drive current out of  
BASE changes from (Ib(Q1)+ Ib(Q2)) to (Ib(Q1)+Ic(Q2))  
as regulation will try to maintain in the loop to get 152 mV  
on FB. Figure 19 shows the equivalent circuit when an open  
load occurs.  
A resistor pull−up from PWM to VS illustrates how the  
device can be used as a standalone LED driver without using  
a microprocessor to drive the PWM input.  
Figure17 along with Figure 18 and Figure 19 highlight the  
use of the NCV7692 device with multiple strings connected  
to a common drive BASE pin and using external resistors to  
tie additional strings to a common feedback point (FB). The  
FB pin will maintain regulation with the FB pin at 152 mV.  
VBAT  
VBAT  
C1  
0.1 μF  
R6, 680 Ω  
R7, 680 Ω  
NCV7692  
R2  
10 kΩ  
Q1  
Q2  
IB(Q1)  
IB(Q2)  
R3  
10 kΩ  
BCP56  
BCP56  
VS  
SC  
BCP56  
PWM BASE  
R2  
10 kΩ  
R3  
10 kΩ  
FLTS  
NTC  
FB  
C2  
0.1 μF  
R1  
1 Ω  
GND  
SC  
BASE  
FB  
R1  
1 Ω  
R4  
1 Ω  
Figure 16. Application Diagram with No  
Microprocessor  
(Because of the SC minimum specification  
limitation of VS − 1.7 V, resistors R6 and  
R7 will need to be replaced by diodes if the  
drop across the load is >3.4 V)  
GND  
Figure 17. Driving Multiple Strings  
VBAT  
VBAT  
R6, 680 Ω  
R6, 680 Ω  
R7, 680 Ω  
Q1  
IB(Q1)  
Q1  
Q2  
IB(Q1)  
IB(Q2)  
BCP56  
BCP56  
BCP56  
IC(Q2)  
R2  
10 kΩ  
R3  
10 kΩ  
R2  
10 kΩ  
R3  
10 kΩ  
SC  
BASE  
FB  
R1  
1 Ω  
R4  
1 Ω  
SC  
R1  
1 Ω  
R4  
1 Ω  
BASE  
FB  
GND  
(Because of the SC minimum specification  
limitation of VS − 1.7 V, resistors R6 and  
R7 will need to be replaced by diodes if the  
drop across the load is >3.4 V)  
GND  
Figure 19. Open Circuit Equivalent  
Figure 18. Open Circuit  
www.onsemi.com  
15  
 
NCV7692  
Table 2. FAULT HANDLING TABLE  
Driver  
Condition after  
Parameters  
Within  
Output Fault Clear  
or Operation  
Restitution  
Driver  
Condition  
During Fault  
Fault  
Sense  
Fault  
Specified  
Limits  
Memory  
Condition  
Reporting  
Fault  
Requirement  
42 ms  
Driver is latched  
Off.  
Open Load  
(FLTS  
active)  
Toggle PWM pin.  
VS power down  
below UVLO.  
Latched  
off.  
Driver is latched  
Off.  
FLTS low to  
high  
w / FB < Vref/2 76 mV  
or I  
> 25 mA  
base  
5.1 V < VS < 19.5 V  
Open Load  
(FLTS =  
GND)  
No  
effect.  
n/a  
No effect.  
No effect.  
n/a  
n/a  
Short  
Circuit to  
Vbat (FLTS  
active)  
23 ms  
SC < VS − 2 V  
VS > 5.1 V  
Toggle PWM pin.  
VS power down  
below UVLO.  
Latched  
off.  
Driver is latched  
Off.  
Driver is latched  
Off.  
FLTS low to  
high  
Short  
23 ms  
SC < VS − 2 V  
VS > 5.1 V  
Toggle PWM pin.  
VS power down  
below UVLO.  
Latched  
off.  
Driver is latched  
Off.  
Driver is latched  
Off.  
FLTS low to  
high  
Circuit to  
Vbat (FLTS  
= GND)  
Under  
Voltage  
Lockout  
Driver  
Off  
VS > 4 V minus  
200mV hysteresis.  
VS < 4 V  
Driver Off  
Driver back on.  
n/a  
n/a  
Threshold 1  
VS > 19.5 V  
Reduced output  
current  
Output  
Current  
Reduced  
Driver back to  
normal  
operation.  
Over  
Voltage  
VS < threshold minus  
700 mV hysteresis.  
Threshold 2  
VS > 31.4 V  
(FB Regulation  
Voltage)  
Thermal  
Shutdown  
(FLTS  
Die temperature  
below shutdown  
hysteresis  
Driver  
Off  
23 ms  
T > 170°C  
FLTS low to  
high  
Driver Off  
Driver Off  
Driver back on.  
Driver back on.  
J
active)  
Thermal  
Shutdown  
(FLTS  
Die temperature  
below shutdown  
hysteresis  
Driver  
Off  
23 ms  
T > 170°C  
FLTS low to  
high  
J
=GND)  
NOTE: All specified voltages, currents, and times refer to typical numbers.  
www.onsemi.com  
16  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC8  
CASE 751AZ  
ISSUE B  
8
1
DATE 18 MAY 2015  
SCALE 1:1  
NOTES 4&5  
0.10 C D  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.  
ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF  
MAXIMUM MATERIAL CONDITION.  
455CHAMFER  
D
h
NOTE 6  
D
A
2X  
H
8
5
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS  
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS  
SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES  
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD  
FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE.  
5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT­  
TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER­  
MOST EXTREMES OF THE PLASTIC BODY AT DATUM H.  
6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H.  
7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD  
BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP.  
0.10 C D  
NOTES 4&5  
E
E1  
L2  
SEATING  
PLANE  
L
C
DETAIL A  
1
4
0.20 C D  
8X b  
8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING  
PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.  
B
M
0.25  
C A-B D  
NOTE 6  
MILLIMETERS  
TOP VIEW  
NOTES 3&7  
DIM MIN  
MAX  
1.75  
0.25  
---  
DETAIL A  
A
A1  
A2  
b
---  
0.10  
1.25  
0.31  
0.10  
A2  
NOcTE 7  
0.10 C  
0.51  
0.25  
c
D
4.90 BSC  
A
E
6.00 BSC  
3.90 BSC  
1.27 BSC  
e
END VIEW  
SEATING  
PLANE  
E1  
e
C
A1  
SIDE VIEW  
NOTE 8  
h
0.25  
0.40  
0.41  
1.27  
L
0.25 BSC  
L2  
RECOMMENDED  
SOLDERING FOOTPRINT*  
GENERIC  
MARKING DIAGRAM*  
8X  
0.76  
8
XXXXX  
ALYWX  
8X  
1.52  
G
1
7.00  
XXXXX = Specific Device Code  
A
L
= Assembly Location  
= Wafer Lot  
Y
W
G
= Year  
= Work Week  
= PbFree Package  
1
1.27  
PITCH  
DIMENSIONS: MILLIMETERS  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present.  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON34918E  
SOIC8  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
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