NCS2003XV53T2G [ONSEMI]
Low Voltage, Rail-to-Rail Output Operational Amplifier; 低电压，轨至轨输出运算放大器
| 型号： | NCS2003XV53T2G |
| 厂家： | 
ONSEMI |
| 描述： | Low Voltage, Rail-to-Rail Output Operational Amplifier |
| 文件： | 总10页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCS2003, NCV2003
Low Voltage, Rail-to-Rail
Output Operational
Amplifier
The NCS2003/NCV2003 is a low voltage operational amplifier with
rail−to−rail output drive capability. The 1.8 V operation allows high
performance operation in low voltage, low power applications.
Additional features include no output phase reversal with
overdriven inputs, a low input offset voltage of 0.5 mV, ultra low input
bias current of 1 pA, and a unity gain bandwidth of 5 MHz at 1.8 V.
The tiny NCS2003 is the ideal solution for small portable electronic
applications and is available in the space saving SOT23−5 and
SOT−553 packages. The NCV2003 is available in SOT23−5 and is
AEC−Q100 Qualified and PPAP Capable.
http://onsemi.com
5
1
SOT23−5
CASE 483−02
(NCS/NCV2003)
SOT553, 5 LEAD
CASE 463B
(NCS2003)
MARKING DIAGRAMS
Features
• 7 MHz Unity Gain Bandwidth at 5 V
• 5 MHz Unity Gain Bandwidth at 1.8 V
• Rail−to−Rail Output
• No Output Phase Reversal for Over−Driven Input Signals
• Low Offset Voltage − 500 mV typical
• Low Input Bias Current – 1 pA typical
• Space saving SOT23−5 and SOT553−5 Packages
5
1
AN3YWG
A3M
G
AN3 = NCS/NCV2003SN2T1G
A3 = NCS2003XV53T2G
Y
W
M
G
= Year
= Work Week
= Date Code
= Pb−Free Package
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
(Note: Microdot may be in either location)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
Typical Applications
• Cellular Telephones
1
2
3
5
4
V
V
DD
OUT
• Current Shunt Monitors for battery monitoring
• Pulse Oximetry Signal Conditioning
• Blood Pressure Monitor Conditioning and Filtering
• Hard Drive Sensor Buffer
V
SS
+ −
IN−
IN+
SOT23−5
1
2
3
5
4
IN+
V
DD
+
−
V
SS
OUT
IN−
SOT553−5
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
January, 2014 − Rev. 2
NCS2003/D
NCS2003, NCV2003
ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated
Parameter
Symbol
Limit
Unit
Supply Voltage (V − V
)
V
S
7
V
DD
SS
INPUT AND OUTPUT PINS
Input Voltage (Note 1)
Input Current
V
V
SS
− 300 mV to 7.0 V
V
IN
I
IN
10
mA
mA
Output Short Circuit Current (Note 2)
TEMPERATURE
I
100
OSC
Storage Temperature
Junction Temperature
ESD RATINGS
T
−65 to 150
°C
°C
STG
T
J
150
Human Body Model
Machine Model
HBM
MM
2000
200
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Neither input should exceed the range of VSS − 300 mV to 7.0 V
2. Indefinite duration; however, maximum package power dissipation limits must be observed to ensure that the maximum junction temperature
is not exceeded.
THERMAL INFORMATION (Note 3)
Thermal Metric
Symbol
Limit
235
Unit
°C/W
°C/W
Junction to Ambient − SOT23−5
Junction to Ambient − SOT553−5
q
q
JA
JA
250
2
3. As mounted on an 80 x 80 x 1.5 mm FR4 PCB with 650 mm and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC
JESD/EIA 51.1, 51.2, 51.3 test guidelines.
OPERATING CONDITIONS
Parameter
Symbol
Limit
Unit
V
Operating Supply Voltage
Specified Operating Range
V
S
1.7 to 5.5
NCS2003
NCV2003
T
A
−40 to +85
−40 to +125
°C
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2
NCS2003, NCV2003
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range, T = –40°C to +85°C (NCS2003), T = –40°C to +125°C (NCV2003). Guaranteed by design and/or
A
A
characterization.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
0.5
4.0
mV
5.0
Offset Voltage Drift
DV/DT
2.0
1
mV/°C
pA
Input Bias Current
I
IB
Input Offset Current
I
1
pA
OS
Differential Input Resistance
Differential Input Capacitance
Input Common Mode Range
R
C
>1
1.2
TW
pF
IN
IN
V
ICR
Inferred from CMRR
V
SS
V − 0.6
DD
V
Common Mode Rejection Ratio
CMRR
V
IN
V
IN
= 0 V to V – 0.6 V
70
80
dB
DD
= 0.2 V to V – 0.6 V
65
DD
OUTPUT CHARACTERISTICS
Output Voltage High
V
V
V
V
V
= +0.5 V, R = 10 kW
1.75
1.75
1.7
1.798
1.78
7.0
V
OH
ID
ID
ID
ID
L
= +0.5 V, R = 2 kW
L
1.7
Output Voltage Low
Short Circuit Current
V
= −0.5 V, R = 10 kW
50
50
mV
mA
OL
SC
L
20
100
100
= −0.5 V, R = 2 kW
L
I
V
V
= +0.5 V, V = V , Sourcing
5.0
10
8.0
14
ID
O
SS
= −0.5 V, V = V , Sinking
ID
O
DD
NOISE PERFORMANCE
Voltage Noise Density
e
f = 1 kHz
f = 1 kHz
20
nV/√Hz
pA/√Hz
N
Current Noise Density
i
N
0.1
DYNAMIC PERFORMANCE
Open Loop Voltage Gain
A
VOL
R = 10 kW
80
92
92
dB
dB
L
75
R = 2 kW
L
70
Gain Bandwidth Product
Gain Margin
GBWP
5
12
MHz
dB
A
R = 10 kW, C = 5 pF
L L
M
M
Phase Margin
Slew Rate
y
R = 10 kW, C = 5 pF
53
°
L
L
SR
Positive Slope, R = 2 k, A = +1
6
V/ms
V/ms
%
L
V
Negative Slope, R = 2 k, A = +1
9
L
V
Total Harmonic Distortion +
Noise
THD+N
V
V
= 1 Vpp, R = 2 kW, A = +1, 1 kHz
0.015
0.025
O
L
V
= 1 Vpp, R = 2 kW, A = +1,
%
O
L
V
10 kHz
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
72
80
dB
65
Quiescent Current
I
No Load
230
560
mA
CC
1
mA
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3
NCS2003, NCV2003
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted. Boldface limits apply over the
A
L
CM
OUT
specified temperature range, T = –40°C to +85°C (NCS2003), T = –40°C to +125°C (NCV2003). Guaranteed by design and/or
A
A
characterization.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
0.5
4.0
mV
5.0
Offset Voltage Drift
DV/DT
2.0
1
mV/°C
pA
Input Bias Current
I
IB
Input Offset Current
I
1
pA
OS
Differential Input Resistance
Differential Input Capacitance
Input Common Mode Range
R
C
>1
1.2
TW
pF
IN
IN
V
ICR
Inferred from CMRR
V
SS
V − 0.6
DD
V
Common Mode Rejection Ratio
CMRR
V
IN
V
IN
= 0 V to V – 0.6 V
65
70
dB
DD
= 0.2 V to V – 0.6 V
63
DD
OUTPUT CHARACTERISTICS
Output Voltage High
V
V
V
V
V
= +0.5 V, R = 10 kW
4.95
4.95
4.9
4.99
4.97
8.0
V
OH
ID
ID
ID
ID
L
= +0.5 V, R = 2 kW
L
4.9
Output Voltage Low
Short Circuit Current
V
= −0.5 V, R = 10 kW
50
50
mV
mA
OL
SC
L
24
100
100
= −0.5 V, R = 2 kW
L
I
V
V
= +0.5 V, V = V , Sourcing
40
50
76
96
ID
O
SS
= −0.5 V, V = V , Sinking
ID
O
DD
NOISE PERFORMANCE
Voltage Noise Density
e
f = 1 kHz
f = 1 kHz
20
nV/√Hz
pA/√Hz
N
Current Noise Density
i
N
0.2
DYNAMIC PERFORMANCE
Open Loop Voltage Gain
A
VOL
R = 10 kW
86
78
83
78
92
92
dB
dB
L
R = 2 kW
L
Gain Bandwidth Product
GBWP
THD+N
7.0
0.005
0.01
9
MHz
%
Total Harmonic Distortion +
Noise
V
V
= 4Vpp, R = 2 kW, A = +1, 1 kHz
L V
O
= 4Vpp, R = 2 kW, A = +1, 10 kHz
%
O
L
V
Gain Margin
Phase Margin
Slew Rate
A
M
R = 10 kW, C = 5 pF
dB
L
L
y
M
R = 10 kW, C = 5 pF
64
°
L
L
SR
Positive Slope, R = 2 k, A = +1
7
V/ms
V/ms
L
V
Negative Slope, R = 2 k, A = +1
14
L
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
72
80
dB
65
Quiescent Current
I
No Load
300
660
mA
CC
1
mA
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4
NCS2003, NCV2003
TYPICAL CHARACTERISTICS
600
700
600
500
400
300
200
100
0
500
+85°C
400
+125°C
V
S
= 5 V
V
S
= 2.7 V
300
+25°C
−40°C
V
S
= 1.8 V
200
100
No Load
100
No Load
0
0
2
3
4
5
−50
−25
0
25
50
75
125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Figure 1. Quiescent Supply Current vs. Supply
Voltage
Figure 2. Quiescent Supply Current vs.
Temperature
1.8
20
18
16
14
12
10
8
V
= 5 V
S
1.6
1.4
1.2
1
+125°C
0.8
0.6
0.4
0.2
0
+85°C
+25°C
+85°C
−40°C
−40°C
6
+125°C
4
+25°C
2
V
S
= 1.8 V
0
0
1
2
3
4
5
0
5
10
15
20
V
CM
, COMMON MODE VOLTAGE (V)
LOW LEVEL OUTPUT CURRENT (mA)
Figure 3. Input Offset Current vs. VCM
Figure 4. Low Level Output Voltage vs. Output
Current @ VS = 1.8 V
0.5
0.4
0.3
0.2
0.1
0
1.8
1.6
1.4
1.2
1
V
= 5 V
V
S
= 1.8 V
S
−40°C
+25°C
+125°C
+85°C
+85°C
0.8
0.6
0.4
0.2
0
−40°C
+125°C
+25°C
0
5
10
15
20
0
−2
−4
−6
−8
−10
LOW LEVEL OUTPUT CURRENT (mA)
Figure 5. Low Level Output Voltage vs. Output
Current @ VS = 5 V
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 6. High Level Output Voltage vs. Output
Current @ VS = 1.8 V
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5
NCS2003, NCV2003
TYPICAL CHARACTERISTICS
5
4.9
4.8
4.7
4.6
4.5
140
V
= 5 V
S
R = 10 kW
T = 25°C
A
L
120
100
80
60
40
20
0
−40°C
+25°C
+85°C
+125°C
−16
V
V
= 1.8 V
= 5 V
S
S
0
−4
−8
−12
−20
10
100
1k
10k
100k
1M
HIGH LEVEL OUTPUT CURRENT (mA)
FREQUENCY (Hz)
Figure 7. High Level Output Voltage vs. Output
Current @ VS = 5 V
Figure 8. PSRR vs. Frequency
120
100
80
60
40
20
0
360
300
240
180
120
60
Gain − 10 kW
Gain − 2 kW
Phase − 10 kW
R = 10 kW
T = 25°C
A
L
100
80
60
40
20
0
Gain
Phase − 2 kW
Phase
V
= 1.8 V
C = 5 pF
T = 25°C
S
V
V
= 1.8 V
= 5 V
S
L
S
A
−20
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9. CMRR vs. Frequency
Figure 10. Open Loop Gain and Phase vs.
Frequency @ VS = 1.8 V
80
100
360
Gain − 2 kW
V
= 1.8 V
S
70
60
50
40
30
20
10
0
Gain
Gain − 10 kW
Phase − 2 kW
Phase − 10 kW
R = 10 kW
T = 25°C
A
L
80
60
40
20
0
300
240
180
120
60
Phase
V
= 5 V
C = 5 pF
T = 25°C
S
L
A
−20
0
10
100
1k
10k
100k
1M
10M
100M
0
50
100
150
200
FREQUENCY (Hz)
CAPACITIVE LOAD (pF)
Figure 11. Open Loop Gain and Phase vs.
Frequency @ VS = 5 V
Figure 12. Phase Margin vs. Capacitive Load
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6
NCS2003, NCV2003
TYPICAL CHARACTERISTICS
140
120
100
80
140
Output
Input
V
= 1.8 V
V
= 1.8 V
Output
Input
S
S
R = 2 kW
T = 25°C
A
120 R = 2 kW
L
L
T = 25°C
A
100
80
60
40
20
0
60
40
20
0
−20
−20
−20
−20
0
20
40
60
0
20
40
60
TIME (ms)
TIME (ms)
Figure 13. Inverting Small Signal Transient
Response
Figure 14. Non−Inverting Small Signal
Transient Response
1800
1600
1400
1200
1000
800
1800
1600
1400
1200
1000
800
Output
Input
V
= 1.8 V
Output
Input
S
V
= 1.8 V
S
R = 2 kW
T = 25°C
A
L
R = 2 kW
T = 25°C
A
L
600
600
400
400
200
200
0
0
−200
−200
−20
0
20
40
60
−20
0
20
40
60
TIME (ms)
TIME (ms)
Figure 15. Inverting Large Signal Transient
Response
Figure 16. Non−Inverting Large Signal
Transient Response
6
5
2
V
= 5 V
V
= 1.8 V
Output
Input
S
S
Output
Input
R = 2 kW
T = 25°C
A
1.5 R = 2 kW
L
L
T = 25°C
A
1
0.5
0
4
3
2
−0.5
−1
1
0
−1.5
−2
−1
−20
0
20
40
60
−2E−5
0E+0
2E−5
4E−5
6E−5
TIME (ms)
TIME (ms)
Figure 17. Non−Inverting Large Signal
Figure 18. Output Overload Recovery
Transient Response
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7
NCS2003, NCV2003
TYPICAL CHARACTERISTICS
10
1
140
R = 2 kW
L
V
V
= 1.8 V
S
A = +1
V
= V /2
120
100
80
60
40
20
0
IN
S
T = 25°C
A
V
S
= 1.8 V
0.1
V
= 5 V
S
0.01
0.001
10
100
1k
FREQUENCY (Hz)
10k
100k
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 19. THD+N vs. Frequency
Figure 20. Input Voltage Noise vs. Frequency
10
V
V
= 1.8 V
S
= V /2
IN
S
1
0.1
0.01
0.001
0.0001
0.00001
10
100
1k
FREQUENCY (Hz)
10k
100k
Figure 21. Noise Density vs. Frequency
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NCS2003SN2T1G
AN3
SOT23−5
(Pb−Free)
3000 / Tape and Reel
3000 / Tape and Reel
4000 / Tape and Reel
NCV2003SN2T1G*
(In Development)
AN3
A3
SOT23−5
(Pb−Free)
NCS2003XV53T2G
SOT553−5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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8
NCS2003, NCV2003
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
C
D
0.90
0.25
1.10
0.50
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
10
3.00
0.05
H
SEATING
PLANE
END VIEW
C
_
_
SIDE VIEW
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
NCS2003, NCV2003
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
NOTES:
D
−X−
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
5
4
3
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
E
−Y−
DIM
A
b
c
D
E
e
L
H
MIN
0.50
0.17
0.08
1.55
1.15
NOM
0.55
MAX
MIN
MAX
0.024
0.011
0.007
0.065
0.049
H
E
0.60
0.27
0.18
1.65
1.25
0.020
0.007
0.003
0.061
0.045
1
2
0.22
0.13
1.60
0.063
0.047
b 5 PL
c
1.20
e
M
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.063
0.08 (0.003)
X Y
0.10
1.55
0.30
1.65
0.004
0.061
0.012
0.065
E
RECOMMENDED
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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