NCL30105DR2G [ONSEMI]

灵活可调光的降压LED驱动器控制器;
NCL30105DR2G
型号: NCL30105DR2G
厂家: ONSEMI    ONSEMI
描述:

灵活可调光的降压LED驱动器控制器

驱动 控制器 光电二极管 接口集成电路 驱动器
文件: 总24页 (文件大小:718K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCL30105  
Constant Off Time PWM  
Current-Mode Controller for  
LED Applications  
The NCL30105 is a peak current controlled fixed off time controller  
designed for LED driver applications in which the LEDs are operated  
in deep Continuous Conduction Mode (CCM) without requiring slope  
compensation. Featuring an adjustable off time generator, the  
controller can drive a MOSFET up to a 500 kHz switching frequency.  
A dedicated dimming pin enables the use of a pulsewidth  
modulated logic signal to dim the LEDs directly. The softstart pin  
creates a startup sequence that slowly ramps up the peak current and  
enables the adjustment of the peak current setpoint for analog  
dimming control. The device features robust protection features to  
detect switch overcurrent faults and to detect maximum on time  
events.  
http://onsemi.com  
8
1
SOIC8  
D SUFFIX  
CASE 751  
MARKING DIAGRAM  
8
Features  
L0105  
ALYW  
G
Constant Off Time CurrentMode Control Operation  
Adjustable Off Time (0.5 ms to 10 ms)  
Internal Leading Edge Blanking  
1
Source 250 mA / Sink 500 mA Peak Drive Capability  
L0105 = Specific Device Code  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= PbFree Package  
3.2% Current Sense Accuracy at 25°C  
Internal Startup Delay  
3.3 V Logic Level Dimming Input  
This is a PbFree Device  
Safety Features  
Thermal Shutdown  
Maximum On Time Protection  
Overcurrent Protection  
PIN CONNECTIONS  
1
toff  
NC  
DIM  
VCC  
CS  
SSTART  
Typical Application  
GND  
DRV  
LED Backlight Drivers for LCD Panels  
LED Light Bars  
LED Street Lighting  
LED Bulbs  
(Top View)  
ORDERING INFORMATION  
Device  
NCL30105DR2G  
Package  
Shipping  
SOIC8 2500 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 Rev. 2  
NCL30105/D  
NCL30105  
Vin  
LED  
1
C
LED  
LED  
N
D
L
NCL30105  
toff  
NC  
SSTART  
GND  
SoftStart /  
Ipeak Adjustment  
DIM  
VCC  
CS  
DIM  
V
CC  
C
SSTART  
M
DRV  
R
R
sense  
CV  
toff  
CC  
Figure 1. Typical Application Diagram  
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2
NCL30105  
Vcc  
VCC  
UVLO  
ok = 1, else 0  
NC  
Von = V  
CC(on)  
CC(off)  
ref  
Voff = V  
V
toff(open)  
1 = reset  
1 = reset  
t
start(delay)  
V
SSTART(open)  
set current  
high  
I
SSTART  
toff  
SSTART  
= rst  
SET  
toff  
generator  
Q
SET  
V
DIM(open)  
start  
pulse  
S
Q
R
DIM  
DIM  
Q
R
S
Q
Q
R
Q
/ I  
ratio  
GND  
OVRI  
OVRI  
t
on  
>
t
on(MAX)  
V
ILIM  
V
ILIM(fault)  
down  
N
fault  
up  
Vcc  
count to N  
fault  
t
t
LEB  
LEB(fault)  
CS  
DRV  
Figure 2. Internal Circuit Architecture  
Table 1. PIN FUNCTION DESCRIPTION  
Pin  
Number  
Pin Name  
Function  
Pin Description  
1
toff  
Adjusts the Off Time  
Duration  
A resistor to ground sets the off time duration.  
2
3
4
DIM  
VCC  
CS  
Dimming Input  
This pin is used for PWM dimming or to enable/disable the controller.  
An external auxiliary voltage connected to this pin supplies the controller.  
Supplies the Controller  
Current Sense Input  
This pin monitors the peak current. When the peak current reaches the  
internal threshold, the DRV is turned off.  
5
6
7
DRV  
GND  
Driver Output  
The output of the driver is connected to an external MOSFET gate.  
The controller ground.  
SSTART  
Softstart / Peak Current  
A capacitor connected to this pin sets the softstart duration. The voltage  
of this pin adjusts the peak current set point for analog dimming.  
Adjustment  
8
NC  
Nonconnected Pin  
Nonconnected pin  
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3
NCL30105  
Table 2. MAXIMUM RATINGS TABLE (Notes 1 – 4)  
Rating  
Symbol  
Value  
0.3 to 5.5  
10  
Unit  
V
toff Voltage  
V
toff  
toff  
toff Current  
I
mA  
V
DIM Voltage  
V
0.3 to 7  
10  
DIM  
DIM  
DIM Current  
I
mA  
V
SSTART Voltage  
SSTART Current  
CS Voltage  
V
0.3 to 5.5  
10  
SSTART  
SSTART  
I
mA  
V
V
CS  
0.3 to 7  
10  
CS Current  
I
mA  
V
CS  
DRV Voltage  
V
0.3 to V  
500  
DRV  
DRV(sink)  
CC  
DRV Sink Current  
DRV Source Current  
Supply Voltage  
Supply Current  
I
mA  
mA  
V
I
250  
DRV(source)  
V
CC  
0.3 to 22  
20  
I
mA  
mW  
CC  
Power Dissipation (SO8)  
A
P
D
450  
2
(T = 70°C, 2.0 Oz Cu, 55 mm Printed Circuit Copper Clad)  
Thermal Resistance JunctiontoAmbient (SO8)  
R
°C/W  
q
JA  
2
(2.0 Oz Cu, 55 mm Printed Circuit Copper Clad)  
178  
168  
127  
JunctiontoAir, Low conductivity PCB (Note 3)  
JunctiontoAir, High conductivity PCB (Note 4)  
Operating Junction Temperature Range  
Storage Temperature Range  
T
40 to 150  
60 to 150  
300  
°C  
°C  
°C  
J
T
STG  
Lead Temperature (Soldering, 10 s)  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. This device series contains ESD protection and exceeds the following tests:  
Pins 1 8: Human Body Model 2000 V per JEDEC Standard JESD22A114E.  
Pins 1 8: Machine Model Method 200 V per JEDEC Standard JESD22A115A.  
Pins 1 8: Charged Device Model 2000 V per JEDEC Standard JESD22C101C.  
2. This device contains LatchUp protection and exceeds 100 mA per JEDEC Standard JESD78.  
2
3. As mounted on a 40x40x1.5 mm FR4 substrate with a single layer of 80 mm of 2 oz copper traces and heat spreading area. As specified  
for a JEDEC 51 low conductivity test PCB. Test conditions were under natural convection or zero air flow.  
2
4. As mounted on a 40x40x1.5 mm FR4 substrate with a single layer of 650 mm of 2 oz copper traces and heat spreading area. As specified  
for a JEDEC 51 high conductivity test PCB. Test conditions were under natural convection or zero air flow.  
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4
 
NCL30105  
Table 3. ELECTRICAL CHARACTERISTICS (R = 40.2 kW, V  
= 3 V, C  
= 100 nF, V = 0 V, C  
= 1 nF, V = 12 V,  
toff  
DIM  
SSTART  
CS  
DRV CC  
unless otherwise specified (For typical values, T = 25°C. For min/max values, T = 40°C to 125°C, unless otherwise specified))  
J
J
Characteristic  
STARTUP AND SUPPLY CIRCUITS  
Startup Voltage Threshold  
Minimum Operating Voltage  
Supply Voltage Hysteresis  
Current Consumption in Latch Mode  
Startup Current Consumption  
Device Disabled Current Consumption  
Device Switching Current Consumption  
GATE DRIVE  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
V
Increasing  
Decreasing  
V
V
9
8
1
10  
8.8  
11  
10  
V
V
CC  
CC(on)  
V
CC  
CC(off)  
V
CC(on)  
V  
V
1.2  
1.5  
900  
390  
1.7  
2.49  
V
CC(off)  
CC(HYS)  
CC(latch)  
I
510  
250  
0.71  
1.84  
mA  
mA  
mA  
mA  
V
< V  
V
500 mV  
I
I
I
CC  
CC(on)  
CC1  
CC2  
CC3  
= 0 V  
DIM  
f
= 60 kHz  
SW  
Drive Sink Resistance  
I
= 25 mA  
= 25 mA  
R
R
6.0  
24  
80  
25  
13.2  
44  
W
W
SNK  
SNK  
Drive Source Resistance  
Rise Time  
I
SRC  
SRC  
V
V
= 10% to 90%  
= 90% to 10%  
t
r
140  
60  
ns  
ns  
DRV  
DRV  
Fall Time  
t
f
CURRENT SENSE  
Current Sense Voltage Threshold  
T =40°C to 125°C  
V
ILIM  
0.95  
0.977  
1.01  
1.01  
1.05  
1.042  
V
J
T =25°C  
J
Current Sense Propagation Delay  
V
= 0 V to 1.2 V Step,  
t
60  
150  
ns  
CS  
ILIM  
dV/dt = 10 V/ms  
V
CS  
= V  
to V  
= 10%  
ILIM  
DRV  
Leading Edge Blanking Duration  
CONSTANT OFF TIME GENERATOR (Note 5)  
Off Time (Note 6)  
t
470  
545  
670  
ns  
LEB  
R
= 5 kW  
t
0.87  
2.5  
1.02  
1.13  
60  
ms  
kW  
ms  
toff  
off1  
Recommended Off Time Resistor Range  
Minimum Off Time  
R
t
toff(range)  
R
= 0 W  
t
0.3  
0.37  
11.77  
1
0.5  
14.5  
1.05  
toff  
off(MIN)  
Maximum Off Time  
R
= open  
10  
ms  
toff  
off(MAX)  
t
off  
Pin Regulated Voltage  
V
0.95  
500  
V
toff(REG)  
Maximum Switching Frequency (Note 7)  
SOFTSTART  
R
= 0 W  
f
kHz  
toff  
(MAX)  
SoftStart Charge Current  
V
= 3 V  
I
17  
20  
3
23  
mA  
SSTART  
SSTART  
SoftStart Voltage to Peak Current Set  
Point Ratio  
V
= V  
* I  
I
ratio  
2.85  
3.15  
SSTART  
ILIM  
ratio  
SoftStart Pin Open Voltage  
V
4.5  
5
5.5  
V
SSTART(open)  
SoftStart Internal Discharge Switch  
Resistance  
I
= 5 mA  
R
200  
350  
500  
W
SSTART  
DS(on)SSTART  
DIMMING INPUT  
Dimming Enable Voltage Threshold  
Dimming Disable Voltage Threshold  
DIM Pin Open Voltage  
V
Increasing  
Decreasing  
V
1.8  
0.8  
4
2
1
2.2  
1.2  
5.5  
150  
1
V
V
DIM  
DIM(H)  
V
DIM  
V
DIM(L)  
V
4.5  
90  
V
DIM(open)  
DIM Pin Internal PullUp Resistor  
Dimming WakeUp Time  
V
= 0 V  
R
50  
kW  
ms  
DIM  
DIM  
V
= 0 V to 3 V Step,  
t
0.28  
DIM  
wake  
dV/dt = 10 V/ms  
to V = 90%  
DRV  
V
DIM  
= V  
DIM(H)  
5. See Figure 17.  
6. The tolerance of toff is guaranteed by design.  
7. The thermal limitation of the device specified by the Maximum Ratings Table must not be exceeded.  
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5
 
NCL30105  
Table 3. ELECTRICAL CHARACTERISTICS (R = 40.2 kW, V  
= 3 V, C  
= 100 nF, V = 0 V, C  
= 1 nF, V = 12 V,  
toff  
DIM  
SSTART  
CS  
DRV CC  
unless otherwise specified (For typical values, T = 25°C. For min/max values, T = 40°C to 125°C, unless otherwise specified))  
J
J
Characteristic  
PROTECTION  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Maximum On Time  
t
29.8  
34  
8
42.1  
ms  
on(MAX)  
Number of Consecutive Maximum On  
Time Events or Overcurrent Events  
N
fault  
Overcurrent Current Sense Voltage  
Threshold  
V
1.5  
10  
1.6  
70  
1.7  
V
ILIM(fault)  
ILIM(fault)  
Overcurrent Propagation Delay  
V
CS  
= 0 V to 2 V Step,  
t
150  
ns  
dV/dt = 10 V/ms  
to V  
DRV  
V
CS  
= V  
= 10%  
ILIM(fault)  
Overcurrent Leading Edge Blanking Dur-  
ation  
t
170  
220  
280  
ns  
LEB(fault)  
Leading Edge Blanking Duration Ratio  
Startup Delay  
t
/t  
t
0.3  
0.4  
130  
155  
40  
0.8  
LEB(fault) LEB  
LEB(ratio)  
V
CC  
= V  
to V  
= 90%  
t
start(delay)  
100  
172  
ms  
°C  
°C  
ms  
CC(on)  
DRV  
Thermal Shutdown  
T = Increasing  
J
T
SHDN  
Thermal Shutdown Hysteresis  
Thermal Shutdown Delay  
5. See Figure 17.  
6. The tolerance of toff is guaranteed by design.  
7. The thermal limitation of the device specified by the Maximum Ratings Table must not be exceeded.  
T = Decreasing  
J
T
SHDN(HYS)  
SHDN(delay)  
T
75  
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6
NCL30105  
TYPICAL CHARACTERISTICS  
11.0  
10.8  
10.6  
10.4  
10.0  
9.8  
9.6  
9.4  
9.2  
9.0  
8.8  
8.6  
8.4  
8.2  
8.0  
10.2  
10.0  
9.8  
9.6  
9.4  
9.2  
9.0  
50 25  
0
25  
50  
75  
100  
125  
150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 3. Startup Voltage Threshold vs.  
Junction Temperature  
Figure 4. Minimum Operating Voltage vs.  
Junction Temperature  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
330  
310  
290  
270  
250  
230  
210  
190  
170  
150  
50 25  
0
25  
50  
75  
100  
125 150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 5. Supply Voltage Hysteresis vs.  
Junction Temperature  
Figure 6. Startup Current Consumption vs.  
Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.0  
50 25  
0
25  
50  
75  
100  
125 150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 7. Device Disabled Current  
Consumption vs. Junction Temperature  
Figure 8. Device Switching Current  
Consumption vs. Junction Temperature  
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7
NCL30105  
TYPICAL CHARACTERISTICS  
1.10  
1.08  
1.06  
1.04  
1.02  
1.00  
0.98  
0.96  
0.94  
0.92  
0.90  
600  
590  
580  
570  
560  
550  
540  
530  
520  
510  
500  
50 25  
0
25  
50  
75  
100  
125  
150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 9. Current Sense Voltage Threshold vs.  
Junction Temperature  
Figure 10. Leading Edge Blanking Duration vs.  
Junction Temperature  
100  
90  
80  
70  
60  
50  
24  
23  
22  
21  
20  
19  
18  
40  
30  
20  
17  
16  
50 25  
0
25  
50  
75  
100  
125 150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 11. Current Sense Propagation Delay  
vs. Junction Temperature  
Figure 12. SoftStart Charge Current vs.  
Junction Temperature  
3.15  
3.10  
3.05  
3.00  
1.15  
1.10  
1.05  
1.00  
0.95  
Rtoff = 5 kW  
2.95  
2.90  
2.85  
0.90  
0.85  
50 25  
0
25  
50  
75  
100  
125 150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 13. SoftStart Voltage to Peak Current  
Figure 14. Off Time vs. Junction Temperature  
Set Point Ratio vs. Junction Temperature  
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8
NCL30105  
TYPICAL CHARACTERISTICS  
14.0  
13.5  
13.0  
12.5  
12.0  
11.5  
11.0  
10.5  
10.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
9.5  
9.0  
50 25  
50 25  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 15. Minimum Off Time vs. Junction  
Temperature  
Figure 16. Maximum Off Time vs. Junction  
Temperature  
13  
12  
11  
10  
9
8
7
6
5
50  
45  
40  
35  
30  
4
3
25  
20  
2
1
0
2.5  
12.5  
22.5  
32.5  
42.5  
52.5  
62.5  
50 25  
0
25  
50  
75  
100  
125 150  
R
, toff PIN RESISTOR (kW)  
T , JUNCTION TEMPERATURE (°C)  
J
toff  
Figure 17. Off Time vs. toff Pin Resistor  
Figure 18. Maximum On Time vs. Junction  
Temperature  
1.80  
1.75  
1.70  
1.65  
1.60  
1.55  
1.50  
1.45  
1.40  
2.5  
2.0  
1.5  
1.0  
V
DIM(H)  
V
DIM(L)  
0.5  
0.0  
50 25  
0
25  
50  
75  
100  
125 150  
50 25  
0
25  
50  
75  
100  
125 150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 19. Overcurrent Current Sense Voltage  
Threshold vs. Junction Temperature  
Figure 20. Dimming Thresholds vs. Junction  
Temperature  
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NCL30105  
TYPICAL CHARACTERISTICS  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.5 3.5  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
10.5  
R
, toff PIN RESISTOR (kW)  
toff  
Figure 21. Zoomed In Off Time vs. toff Pin  
Resistor  
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10  
NCL30105  
Application Information  
Introduction  
pin current source is enabled and the softstart  
NCL30105 implements a currentmode architecture  
operated with a constant off time. The internal current set  
point and the external sense resistor determine the on time  
duration. The off time duration is adjusted with a resistor  
connected from the toff pin to ground. The constant off time  
operation enables deep continuous conduction mode  
operation without requiring slope compensation. The DIM  
pin enables the use of a PWM signal to modulate the  
switching pattern and adjust the average luminosity. The  
SSTART pin creates a softstart that reduces the stress on the  
power components during startup and enables the use of an  
analog dimming signal to set the peak current by adjusting  
the SSTART pin voltage.  
Constant Off Time Peak CurrentMode Operation:  
The constant off time technique enables the controller  
to operate a converter in deep continuous conduction  
mode without requiring slope compensation. The  
constant off time technique is inherently immune to  
subharmonic oscillations.  
sequence begins.  
SoftStart Operation: A capacitor connected to the  
SSTART pin is charged by an internal current source  
after the t  
timer period has elapsed. The  
start(delay)  
softstart period is completed when the SSTART pin  
voltage reaches V *I . The softstart capacitor is  
discharged during the t  
ILIM ratio  
to ensure the SSTART  
start(delay)  
pin voltage begins charging from zero.  
Peak Adjustment: Analog dimming is achieved by  
forcing the SSTART pin below V  
*I , which  
ILIM ratio  
lowers the peak current set point. Note: even if the  
SSTART pin is forced to 0 V, there is still a minimum  
on time every switching cycle. Under this condition, the  
minimum on time is the current sense leading edge  
blanking time plus the propagation delay to turn off the  
MOSFET and the off time is determined by the toff  
resistor value.  
Leading Edge Blanking: an internal circuit blinds the  
current sense comparator for a few hundred  
Off Time Adjustment: A pulldown resistor  
connected to the toff pin sets the off time duration.  
Maximum On Time Protection: an internal circuit  
monitors the drive signal on time duration. If the drive  
nanoseconds when the output drive goes high. The LEB  
ensures that controller remains insensitive to the  
turnon voltage spikes observed on the CS pin due to  
the freewheel diode recovery time.  
on time duration reaches t  
, the fault up/down  
on(MAX)  
Dimming Input: a dedicated pin is provided to PWM  
counter is incremented by 1. If the drive on time  
duration reaches t during the next clock cycle,  
modulate the LED current to reduce the LED  
on(MAX)  
luminosity. The circuit is driven on and off via a 3.3V  
logic level signal. The DIM pin can also be used as an  
enable/disable pin, since the switching is disabled when  
there is a logic low signal applied to this pin.  
the counter is incremented again. If the drive on time  
duration does not reach t due to the current  
on(MAX)  
comparator being triggered during the next drive on  
time, the counter is decremented by 1. This sequence  
continues until the counter reaches 8. If the counter  
reaches 8, the NCL30105 is immediately latched off.  
Thermal Shutdown: if the junction temperature of the  
controller exceeds an internal threshold, the drive is  
disabled. The drive remains disabled until the junction  
temperature decreases below the internal hysteresis  
threshold. The disabling of the drive protects the  
controller from destruction due to overheating.  
When V is forced below V  
and then above  
CC  
CC(off)  
V , the latch is reset.  
CC(on)  
LED ShortCircuit Protection: If the CS pin voltage  
increases above V , the overcurrent comparator  
ILIM(fault)  
is triggered, which turns off the drive and increments  
the fault up/down counter by 1. If the overcurrent  
comparator is triggered again during the next drive on  
time, the counter is incremented again. If the  
overcurrent comparator is not triggered due to the  
current comparator being triggered during the next  
drive on time, the counter is decremented by 1. This  
sequence continues until the counter reaches 8. If the  
counter reaches 8, the part is immediately latched off.  
Startup Sequence  
When V reaches V  
, the NCL30105 maintains the  
CC  
CC(on)  
drive low and the softstart capacitor (C  
to the SSTART pin) remains pulled to ground by the internal  
pulldown switch until the startup delay (t  
, connected  
SSTART  
)
start(delay)  
elapses. Once the t  
period has elapsed, the drive is  
start(delay)  
enabled and a softstart sequence begins. The internal  
current source begins charging C and the voltage on  
the SSTART pin (V  
SSTART  
) begins increasing. The peak  
divided by I . When  
SSTART  
current set point is equal to V  
When V is forced below V  
and then above  
SSTART  
ratio  
CC  
CC(off)  
V
SSTART  
reaches the voltage that sets the maximum peak  
V , the latch is reset.  
CC(on)  
current (V  
= V  
*I ), the softstart sequence is  
SSTART  
ILIM ratio  
Power On Delay: When V reaches V  
, the  
CC  
CC(on)  
complete and the peak current set point is equal to V  
divided by I . Figure 22 describes a typical startup  
sequence.  
SSTART  
t
timer begins counting, during which the  
start(delay)  
ratio  
drive is disabled. When t  
elapses, the SSTART  
start(delay)  
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11  
NCL30105  
V
CC  
V
V
CC(on)  
CC(off)  
t
Internal  
timer  
start(delay)  
reset  
reset  
V
DRV  
V
SSTART  
V
SSTART(open)  
V
= V  
* I  
SSTART  
ILIM ratio  
User changes  
the setpoint  
V
CS  
SoftStart  
Sequence  
V
ILIM  
SoftStart  
Sequence  
Constant Peak Variable Peak  
Figure 22. A Typical Startup Sequence  
SoftStart Pin  
source, the current into the SSTART pin must be limited to  
ensure that the maximum current rating is not exceeded. It  
The softstart internal section is shown in Figure 23. The  
softstart sequence is implemented using a current source  
that charges an external capacitor. The relationship between  
the capacitor voltage and the peak current voltage set point  
is recommended to set V  
by connecting a diode as  
SSTART  
shown in Figure 23. Using this configuration, the SSTART  
capacitor value to set a 15 ms softstart duration (t  
)
SSTART  
is I . The maximum peak current set point is  
is calculated using Equation 1:  
ratio  
V /I . For luminosity balancing purposes, it is  
SSTART ratio  
(eq. 1)  
possible to force the voltage on the SSTART pin from an  
external source. When forcing V with an external  
I
SSTART @ tSSTART  
20 m @ 15 m  
CSSTART  
+
+
+ 0.1 mF  
3
Iratio  
SSTART  
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12  
 
NCL30105  
latch reset  
V
SSTART(open)  
Current  
comparator  
I
SSTART  
D2  
1N4148  
peak current  
SSTART  
setpoint control  
/
sensed  
current  
Iratio  
C
SSTART  
V
ILIM  
t
UVLO reset  
start(delay)  
Timer reset  
Figure 23. The Softstart Block Configuration to Set the Peak Current Setpoint  
Constant Off time Generator  
peak current threshold, the inductor value, and the input  
voltage. Unlike traditional peak current mode control, the  
fixed off time technique is not susceptible to subharmonic  
instability as shown in Figure 24:  
The controller operates with a constant off time technique.  
The off time technique is implemented by forcing a constant  
off time with the on time being set by the combination of the  
I (t)  
L
constant  
DI  
L
constant  
off  
on  
Figure 24. The Constant Off Time Technique is Immune to  
SubHarmonic Instabilities without Ramp Compensation  
In Figure 24, the perturbation is corrected in one switching  
cycle, despite a duty ratio greater than 50%. This benefit  
enables the designer to exclude slope compensation when  
operating the inductor in a deep continuous conduction  
mode.  
The constant off time generator follows the principle  
sketched in Figure 25 where an internal timer is started at the  
end of each on time. Once the off time generator has elapsed,  
it begins the next DRV pulse. The off time is programmed  
by connecting a resistor from the toff pin to ground. The off  
time range is from 0.5 ms to 10 ms.  
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13  
 
NCL30105  
on  
Drive  
off  
Internal  
timer  
adjustable  
constant  
Figure 25. A Timer is Started at the End of the On Time Duration  
Protection  
The NCL30105 includes several methods of protection.  
One of the protection features is the maximum on time  
limitation, which protects the system if the CS pin does not  
receive a signal. The on time is internally limited to  
t
. The maximum on time limitation may occur if the  
on(MAX)  
input voltage is too low or if the CS pin is shorted to ground.  
After 8 consecutive maximum on times events, the  
controller is latched as shown in Figure 26.  
Fault  
Controller is  
latched after  
the 8th event  
occurs  
Smaller pulse:  
countdown  
here  
t
on(MAX)  
Count 1  
2
1
2
3
4
5
6
7
8
Figure 26. The Protection Feature Limits the Maximum On Time  
and Disables the Controller During a Fault  
In latched mode, the controller consumes a low current  
and waits for a complete V cycle (V decreases to less  
in the circuit. The LEB circuit “blanks” the noise to ensure  
that the current and overcurrent comparators are not  
inadvertently triggered. If the LEB circuit is omitted, the  
noise causes the DRV to turn off before the required peak  
current is reached as shown in Figure 28. This causes the  
system to operate erratically. When the LEB circuit is  
included, the noise is “blanked” by blinding the current  
CC  
CC  
than V  
and then increased to greater than V ) to  
CC(on)  
CC(off)  
resume operation. The tracking of the fault events is  
implemented with an up/down counter. The counter is  
incremented by 1 when the t  
duration ends the  
on(MAX)  
driving pulse. The counter is decremented by 1 when a  
normal reset occurs via the current comparator. When the  
counter reaches 0, it stores this value and waits for an up  
pulse to change state.  
The NCL30105 includes Leading Edge Blanking (LEB)  
circuits to prevent inadvertent triggering of the current and  
overcurrent comparators. When the DRV pin goes high,  
noise is generated on the CS pin due to the parasitic elements  
comparator for the LEB duration (t ) and the required  
LEB  
peak current is reached as shown in Figure 29. The inclusion  
of the LEB circuits prevents the erratic operation of the  
system.  
Another protection feature is the overcurrent detection.  
The overcurrent detection activates when a shortcircuit  
occurs in the inductor and LED string. To prevent false  
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14  
 
NCL30105  
detection during surge tests, the controller uses the same  
counter as the maximum on time limitation. Due to the two  
< t . When the overcurrent comparator output goes high,  
LEB  
it resets the PWM latch and increments the counter. The  
different LEB circuits (t  
and t  
) configuration, if  
counter can no longer increment or decrement until the next  
switching cycle. If during the time the overcurrent  
LEB  
LEB(fault)  
there is a severe overload, the overcurrent comparator is  
triggered first and the counter is incremented. If the  
overcurrent comparator is not triggered during the next  
clock cycle, the counter is decremented by the current  
comparator. Figure 27 depicts the logical arrangement  
inside the controller. In the presence of a fast rising signal,  
comparator output is high, t  
elapses and causes the  
LEB  
current comparator output to go high, the output of the  
current comparator is ignored due to the AND gate  
connection. Figure 30 illustrates the operation of the CS  
logic during an overcurrent fault. Only one up count or one  
down count is made per switching cycle.  
the overcurrent comparator is triggered first since t  
LEB(fault)  
V
ILIM  
Current  
Comparator  
latch  
off  
+
CS  
t
LEB  
Overcurrent  
Comparator  
t
LEB(fault)  
+
down  
up  
Count to N  
N
fault  
fault  
V
ILIM(fault)  
t
>
on  
Q
t
on(MAX)  
PWM reset  
Figure 27. CS Internal Logic  
V
CS  
(t)  
V
CS  
(t)  
Required peak current  
Noise “blanked”  
t
ILIM  
V
ILIM  
V
ILIM  
t
ILIM  
t
t
V
down  
Inadvertant trigger  
ILIM  
V
ILIM  
down  
Comparator  
Output  
Comparator  
Output  
t
t
LEB  
LEB  
t
t
DRV  
t
t
DRV  
DRV turned off  
before required  
peak current is  
reached  
Figure 29. Circuit with Leading Edge Blanking  
Figure 28. Circuit without Leading Edge Blanking  
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15  
 
NCL30105  
V
CS  
(t)  
V
V
ILIM(fault)  
t
ILIM(fault)  
ILIM  
t
ILIM  
t
t
V
ILIM(fault)  
up  
Comparator  
t
LEB(fault)  
V
ILIM  
Ignored  
Comparator  
down  
t
t
LEB  
LEB  
t
t
DRV  
off  
Figure 30. The Overcurrent Comparator Increments the Counter during a Fault  
Minimum Dimming Duty Cycle  
During each DIM cycle if the max on time limit is reached  
a certain number of times, the current comparator must be  
triggered the same number of times to reset the fault counter.  
For each DIM cycle, if the maximum on time limit is reached  
a greater number of times than the number of times the  
current comparator is triggered, the fault counter is not reset  
and is incremented each DIM cycle until the fault count is  
reached (Nfault = 8). This results in a minimum dimming  
duty cycle for a particular LED string voltage and inductor  
combination. The minimum dimming duty cycle is  
described in Figure 31 shown below. The first DRV pulse  
during the dimming duty cycle reaches the maximum on  
time, but the second DRV pulse does not and is turned off by  
the current comparator. If the dimming on time (duty cycle)  
is reduced, the second DRV pulse is turned off by the DIM  
pin voltage, the current comparator is not triggered, and the  
NCL30105 latches after 8 dimming cycles.  
Figure 31. Minimum Dimming Duty Cycle  
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16  
 
NCL30105  
Example Calculation  
toff [ms] * 0.1214  
Rtoff [kW] +  
The design begins with the system requirements. The  
following are the system requirements of an example  
system:  
0.1864  
Where t is entered in ms and R is calculated in kW.  
off  
toff  
2.5 * 0.1214  
Rtoff  
+
+ 12.76 kW  
Input Voltage (Vin) = 80 V  
Number of LEDs = 18  
0.1864  
R
toff  
is selected as 12.7 kW.  
The inductor value is calculated using the off time:  
LED forward Voltage = 3.33 V  
LED string Voltage (V  
) = 60 V  
LED  
V
LED @ toff  
dILED  
(eq. 3)  
L +  
LED average current (I  
) = 350 mA  
LED  
LED ripple current (DI  
) = 150 mA ( 75 mA)  
LED  
60 @ 2.5 m  
150m  
L +  
+ 1 mH  
Operating frequency = 100 kHz  
The switching period is calculated using the target  
operating frequency:  
The LED peak current (I  
) is also the inductor  
LED(peak)  
peak current and is calculated using the average LED current  
and the LED ripple current:  
1
fSW  
TSW  
+
(eq. 1)  
dILED  
(eq. 4)  
I
LED(peak) + ILED  
)
2
1
100k  
TSW  
+
+ 10 ms  
150m  
2
I
LED(peak) + 350m )  
+ 425 mA  
The off time (t ) is calculated using the LED string  
off  
voltage, input voltage, and switching period:  
It is critical that the inductor saturation current is greater  
than the peak current. Sufficient margin is generally set to  
20%. For 20% margin, the inductor should be selected to  
have a saturation current greater than 510 mA. The sense  
VLED  
+ ǒ1 * Ǔ  
toff  
@ TSW  
(eq. 2)  
Vin  
resistor (R  
) value is calculated using the peak current:  
sense  
60  
ǒ
80Ǔ@ 10 ms + 2.5 ms  
t
off + 1 *  
VILIM  
Rsense  
+
(eq. 5)  
ILED(peak)  
To set toff, the following calculation is used based on the  
on the approximation of the linear region of the t vs. R  
transfer function as shown in Figure 17:  
off  
toff  
1
Rsense  
+
+ 2.35 W  
0.425  
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17  
NCL30105  
Typical Application Schematic:  
Figure 32. Typical Application Schematic  
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18  
NCL30105  
Thermal Considerations:  
Layout Tips:  
The designer must ensure that the junction temperature of  
the NCL30105 remains less than the value of the maximum  
operating junction temperature in the Maximum Ratings  
Table for the worstcase operating conditions. The  
maximum junction temperature is calculated using the  
estimated current consumption. The estimated current  
consumption is calculated using the following assumptions:  
1. The switching frequency is at the maximum of  
Careful layout is critical for all switchmode power  
supply design. Successful layout includes special  
consideration for noise sensitive pins of the controller IC.  
For the NCL30105 the following pins should be carefully  
routed:  
1. Vcc: This pin requires a ceramic decoupling  
capacitor (typically 100 nF) and a electrolytic  
capacitor (typically 10 mF) to ensure that IC supply  
is constant and decoupled from high frequency  
noise generated by switching currents.  
500 kHz (f  
).  
SW(MAX)  
2. The Vcc is at the maximum of 22 V (V  
)
CC(MAX)  
3. The gate of the MOSFET is modeled using a 1 nF  
2. toff: This pin requires a resistor connected to  
ground to set the off time. It is not recommended  
to leave this pin open or shorted to ground to set  
the off time. The connection from the toff pin to  
the resistor and from the resistor to ground must be  
made as short as possible and connected directly to  
the NCL30105 GND pin. High noise nodes and  
traces must be routed as far away from this pin as  
possible.  
3. SSTART: A capacitor is connected to this pin to  
set the SoftStart time. The connection from the  
SSTART pin to the capacitor and from the  
capacitor to ground must be made as short as  
possible.  
capacitor (C )  
g
4. The nonswitching bias current is at the maximum  
of 1.56 mA (I  
)
CC2  
Using these assumptions, the current consumption is  
calculated:  
ǒ
Ǔ
ICC(TJMAX) + Cg @ VCC @ fSW(MAX) ) ICC2  
I
CC(TJMAX) + (1 n @ 22 @ 500 k) ) 1.56 m + 12.56 mA  
The power dissipation of the NCL30105 is calculated:  
P
(TJMAX) + ICC(TJMAX) @ VCC(MAX)  
P
(TJMAX) + 12.56 m @ 22 + 276 mW  
4. DIM: A decoupling capacitor may need to be  
connected to this pin if it coupled to high noise  
traces. The connection from the DIM pin to the  
capacitor and from the capacitor to ground must be  
made as short as possible. The addition of the  
capacitor may affect the response of time of the  
DIM signal to the DRV output.  
The junction temperature is calculated using the  
maximum thermal resistance (R  
) with the  
qJA(MAX)  
minimum PCB copper area from the maximum ratings table:  
T
J(rise) + P(TJMAX) @ RqJA(MAX)  
T
J(rise) + 0.276 @ 178 + 40oC  
5. CS: If LEB period is not long enough to ensure  
predictable operation, a small RC filter may need  
to be connected to this pin. The addition of the RC  
filter affects the current set point accuracy.  
6. DRV: The trace that connects the DRV pin to the  
MOSFET must be made as short as possible to  
reduce the parasitic inductance of the trace. The  
DRV pin switches high currents and the parasitic  
inductance can cause higher than expected  
voltages to be applied to the gate of the MOSFET.  
A small resistor is recommended to be connected  
in series with the DRV pin to the gate. The resistor  
reduces the effect of the parasitic inductance. The  
addition of the resistor may affect the switching  
losses of the MOSFET.  
Assuming a maximum ambient temperature of 70°C  
ambient  
(T  
), the maximum junction temperature is calculated:  
T
J(MAX) + TJ(rise) ) Tambient  
J(MAX) + 49 ) 70 + 119oC  
T
Since this is less than the T  
parameter with sufficient  
SHDN  
margin, the design is acceptable.  
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19  
NCL30105  
Recommended Layout:  
Figure 33. Top Layout  
Figure 34. Bottom Layout  
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20  
NCL30105  
The critical components for layout are the following:  
1. R2 (R ): This resistor sets the off time. The  
minimized. The recommended minimum value for  
this capacitor is 100 nF.  
toff  
placement of this resistor is such that the distance  
to the pin and IC ground is minimized. The  
footprints R1 and R3 are optional to increase the  
precision of the resistance value.  
3. C8 (C ): This capacitor sets the softstart  
SSTART  
time. The placement of this capacitor is such that  
the distance to the pin and IC ground is  
2. C5 (C  
): This is the Vcc supply decoupling  
minimized.  
VCC  
capacitor. The placement of this capacitor is such  
that the distance to the pin and IC ground is  
The layout includes options to use a surface mount  
inductor (footprint L2) and MOSFET (footprint M2).  
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21  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC8 NB  
CASE 75107  
ISSUE AK  
8
1
DATE 16 FEB 2011  
SCALE 1:1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
X−  
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 75101 THRU 75106 ARE OBSOLETE. NEW  
STANDARD IS 75107.  
S
M
M
Y
B
0.25 (0.010)  
1
K
Y−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
G
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
1.27 BSC  
0.050 BSC  
Z−  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
0.10 (0.004)  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT*  
8
1
8
1
8
8
XXXXX  
ALYWX  
XXXXXX  
AYWW  
G
XXXXX  
ALYWX  
XXXXXX  
AYWW  
1.52  
0.060  
G
1
1
Discrete  
Discrete  
(PbFree)  
IC  
IC  
(PbFree)  
7.0  
0.275  
4.0  
0.155  
XXXXX = Specific Device Code  
XXXXXX = Specific Device Code  
A
L
= Assembly Location  
= Wafer Lot  
A
= Assembly Location  
= Year  
Y
Y
W
G
= Year  
= Work Week  
= PbFree Package  
WW  
G
= Work Week  
= PbFree Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42564B  
SOIC8 NB  
PAGE 1 OF 2  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
SOIC8 NB  
CASE 75107  
ISSUE AK  
DATE 16 FEB 2011  
STYLE 1:  
STYLE 2:  
STYLE 3:  
STYLE 4:  
PIN 1. EMITTER  
2. COLLECTOR  
3. COLLECTOR  
4. EMITTER  
5. EMITTER  
6. BASE  
PIN 1. COLLECTOR, DIE, #1  
2. COLLECTOR, #1  
3. COLLECTOR, #2  
4. COLLECTOR, #2  
5. BASE, #2  
PIN 1. DRAIN, DIE #1  
2. DRAIN, #1  
3. DRAIN, #2  
4. DRAIN, #2  
5. GATE, #2  
PIN 1. ANODE  
2. ANODE  
3. ANODE  
4. ANODE  
5. ANODE  
6. ANODE  
7. ANODE  
6. EMITTER, #2  
7. BASE, #1  
6. SOURCE, #2  
7. GATE, #1  
7. BASE  
8. EMITTER  
8. EMITTER, #1  
8. SOURCE, #1  
8. COMMON CATHODE  
STYLE 5:  
STYLE 6:  
PIN 1. SOURCE  
2. DRAIN  
STYLE 7:  
STYLE 8:  
PIN 1. COLLECTOR, DIE #1  
2. BASE, #1  
PIN 1. DRAIN  
2. DRAIN  
3. DRAIN  
4. DRAIN  
5. GATE  
PIN 1. INPUT  
2. EXTERNAL BYPASS  
3. THIRD STAGE SOURCE  
4. GROUND  
5. DRAIN  
6. GATE 3  
7. SECOND STAGE Vd  
8. FIRST STAGE Vd  
3. DRAIN  
3. BASE, #2  
4. SOURCE  
5. SOURCE  
6. GATE  
7. GATE  
8. SOURCE  
4. COLLECTOR, #2  
5. COLLECTOR, #2  
6. EMITTER, #2  
7. EMITTER, #1  
8. COLLECTOR, #1  
6. GATE  
7. SOURCE  
8. SOURCE  
STYLE 9:  
STYLE 10:  
PIN 1. GROUND  
2. BIAS 1  
STYLE 11:  
PIN 1. SOURCE 1  
2. GATE 1  
STYLE 12:  
PIN 1. EMITTER, COMMON  
2. COLLECTOR, DIE #1  
3. COLLECTOR, DIE #2  
4. EMITTER, COMMON  
5. EMITTER, COMMON  
6. BASE, DIE #2  
PIN 1. SOURCE  
2. SOURCE  
3. SOURCE  
4. GATE  
3. OUTPUT  
4. GROUND  
5. GROUND  
6. BIAS 2  
7. INPUT  
8. GROUND  
3. SOURCE 2  
4. GATE 2  
5. DRAIN 2  
6. DRAIN 2  
7. DRAIN 1  
8. DRAIN 1  
5. DRAIN  
6. DRAIN  
7. DRAIN  
8. DRAIN  
7. BASE, DIE #1  
8. EMITTER, COMMON  
STYLE 13:  
PIN 1. N.C.  
2. SOURCE  
3. SOURCE  
4. GATE  
STYLE 14:  
PIN 1. NSOURCE  
2. NGATE  
STYLE 15:  
PIN 1. ANODE 1  
2. ANODE 1  
STYLE 16:  
PIN 1. EMITTER, DIE #1  
2. BASE, DIE #1  
3. PSOURCE  
4. PGATE  
5. PDRAIN  
6. PDRAIN  
7. NDRAIN  
8. NDRAIN  
3. ANODE 1  
4. ANODE 1  
5. CATHODE, COMMON  
6. CATHODE, COMMON  
7. CATHODE, COMMON  
8. CATHODE, COMMON  
3. EMITTER, DIE #2  
4. BASE, DIE #2  
5. COLLECTOR, DIE #2  
6. COLLECTOR, DIE #2  
7. COLLECTOR, DIE #1  
8. COLLECTOR, DIE #1  
5. DRAIN  
6. DRAIN  
7. DRAIN  
8. DRAIN  
STYLE 17:  
PIN 1. VCC  
2. V2OUT  
3. V1OUT  
4. TXE  
STYLE 18:  
STYLE 19:  
PIN 1. SOURCE 1  
2. GATE 1  
STYLE 20:  
PIN 1. ANODE  
2. ANODE  
3. SOURCE  
4. GATE  
PIN 1. SOURCE (N)  
2. GATE (N)  
3. SOURCE (P)  
4. GATE (P)  
5. DRAIN  
3. SOURCE 2  
4. GATE 2  
5. DRAIN 2  
6. MIRROR 2  
7. DRAIN 1  
8. MIRROR 1  
5. RXE  
6. VEE  
7. GND  
8. ACC  
5. DRAIN  
6. DRAIN  
7. CATHODE  
8. CATHODE  
6. DRAIN  
7. DRAIN  
8. DRAIN  
STYLE 21:  
STYLE 22:  
STYLE 23:  
STYLE 24:  
PIN 1. CATHODE 1  
2. CATHODE 2  
3. CATHODE 3  
4. CATHODE 4  
5. CATHODE 5  
6. COMMON ANODE  
7. COMMON ANODE  
8. CATHODE 6  
PIN 1. I/O LINE 1  
PIN 1. LINE 1 IN  
PIN 1. BASE  
2. COMMON CATHODE/VCC  
3. COMMON CATHODE/VCC  
4. I/O LINE 3  
5. COMMON ANODE/GND  
6. I/O LINE 4  
7. I/O LINE 5  
8. COMMON ANODE/GND  
2. COMMON ANODE/GND  
3. COMMON ANODE/GND  
4. LINE 2 IN  
2. EMITTER  
3. COLLECTOR/ANODE  
4. COLLECTOR/ANODE  
5. CATHODE  
6. CATHODE  
7. COLLECTOR/ANODE  
8. COLLECTOR/ANODE  
5. LINE 2 OUT  
6. COMMON ANODE/GND  
7. COMMON ANODE/GND  
8. LINE 1 OUT  
STYLE 25:  
PIN 1. VIN  
2. N/C  
STYLE 26:  
PIN 1. GND  
2. dv/dt  
STYLE 27:  
PIN 1. ILIMIT  
2. OVLO  
STYLE 28:  
PIN 1. SW_TO_GND  
2. DASIC_OFF  
3. DASIC_SW_DET  
4. GND  
3. REXT  
4. GND  
5. IOUT  
6. IOUT  
7. IOUT  
8. IOUT  
3. ENABLE  
4. ILIMIT  
5. SOURCE  
6. SOURCE  
7. SOURCE  
8. VCC  
3. UVLO  
4. INPUT+  
5. SOURCE  
6. SOURCE  
7. SOURCE  
8. DRAIN  
5. V_MON  
6. VBULK  
7. VBULK  
8. VIN  
STYLE 30:  
PIN 1. DRAIN 1  
2. DRAIN 1  
STYLE 29:  
PIN 1. BASE, DIE #1  
2. EMITTER, #1  
3. BASE, #2  
3. GATE 2  
4. SOURCE 2  
5. SOURCE 1/DRAIN 2  
6. SOURCE 1/DRAIN 2  
7. SOURCE 1/DRAIN 2  
8. GATE 1  
4. EMITTER, #2  
5. COLLECTOR, #2  
6. COLLECTOR, #2  
7. COLLECTOR, #1  
8. COLLECTOR, #1  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42564B  
SOIC8 NB  
PAGE 2 OF 2  
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