MUN5136DW1T1 概述
Dual Bias Resistor Transistors 双偏置电阻晶体管 小信号双极晶体管
MUN5136DW1T1 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-88 | 包装说明: | CASE 419B-02, SC-70, SC-88, 6 PIN |
针数: | 6 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.35 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.385 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
MUN5136DW1T1 数据手册
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PDF下载MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series,
two BRT devices are housed in the SOT−363 package which is ideal
for low−power surface mount applications where board space is at a
premium.
(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
1
SOT−363
CASE 419B
STYLE 1
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Rating
Symbol
Value
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
−50
−50
CBO
CEO
MARKING DIAGRAM
V
Vdc
6
I
C
−100
mAdc
d
XX
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
1
Symbol
Max
Unit
Total Device Dissipation
P
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
XX= Specific Device Code
D
d
T = 25°C
= Date Code
= (See Page 2)
A
Derate above 25°C
mW/°C
°C/W
Thermal Resistance −
Junction-to-Ambient
R
670 (Note 1.)
490 (Note 2.)
θ
JA
DEVICE MARKING INFORMATION
Characteristic
(Both Junctions Heated)
See specific marking information in the device marking table
on page 2 of this data sheet.
Symbol
Max
Unit
Total Device Dissipation
P
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
D
T = 25°C
Preferred devices are recommended choices for future use
and best overall value.
A
Derate above 25°C
mW/°C
°C/W
°C/W
°C
Thermal Resistance −
Junction-to-Ambient
R
493 (Note 1.)
325 (Note 2.)
θ
JA
JL
Thermal Resistance −
Junction-to-Lead
R
188 (Note 1.)
208 (Note 2.)
θ
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
December, 2003 − Rev. 5
MUN5111DW1T1/D
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Package
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Marking
0A
R1 (K)
10
R2 (K)
10
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
0B
22
22
0C
47
47
0D
10
47
0E
10
∞
0F
4.7
1.0
2.2
4.7
4.7
22
∞
0G
0H
1.0
2.2
4.7
47
0J
0K
0L
47
0M
0N
2.2
100
47
47
100
22
0P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = −50 V, I = 0)
I
I
−
−
−
−
−100
−500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = −50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = −6.0 V, I = 0)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = −10 µA, I = 0)
V
V
−50
−50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3.) (I = −2.0 mA, I = 0)
C
B
(BR)CEO
ON CHARACTERISTICS (Note 3.)
Collector-Emitter Saturation Voltage (I = −10 mA, I = −0.3 mA)
V
CE(sat)
−
−
−0.25
Vdc
C
E
(I = −10 mA, I = −5 mA) MUN5130DW1T1/MUN5131DW1T1
C
B
(I = −10 mA, I = −1 mA) MUN5115DW1T1/MUN5116DW1T1
C
B
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
ON CHARACTERISTICS (Note 4.) (Continued)
DC Current Gain MUN5111DW1T1
Symbol
Min
Typ
Max
Unit
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = −10 V, I = −5.0 mA)
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
100
140
140
250
250
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
27
140
130
140
130
140
80
Output Voltage (on)
(V = −5.0 V, V = −2.5 V, R = 1.0 kΩ)
V
OL
Vdc
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
CC
B
L
(V = −5.0 V, V = −3.5 V, R = 1.0 kΩ)
CC
B
L
(V = −5.0 V, V = −5.5 V, R = 1.0 kΩ)
CC
B
L
(V = −5.0 V, V = −4.0 V, R = 1.0 kΩ)
CC
B
L
Output Voltage (off) (V = −5.0 V, V = −0.5 V, R = 1.0 kΩ)
V
OH
−4.9
−
−
Vdc
CC
B
L
(V = −5.0 V, V = −0.05 V, R = 1.0 kΩ) MUN5130DW1T1
CC
B
L
(V = −5.0 V, V = −0.25 V, R = 1.0 kΩ) MUN5115DW1T1
CC
B
L
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
R
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k Ω
1
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
0.8
1.0
1.2
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
0.055
0.38
0.038
1.7
0.1
0.185
0.56
0.056
2.6
0.47
0.047
2.1
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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3
MUN5111DW1T1 Series
ALL MUN5111DW1T1 SERIES DEVICES
300
250
200
150
100
R
= 490°C/W
50
0
θ
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve − ALL DEVICES
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4
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
−25°C
ꢀ0.1
100
25°C
75°C
ꢀ0.01
10
ꢀ20
0
ꢀ40
1
10
100
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
ꢀ0.1
ꢀ0.01
V
O
= 5 V
0
0
ꢀ0.001
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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5
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢁ=ꢁ−25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
O
= 5 V
ꢀ9
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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6
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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7
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
V
O
= 5 V
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
O
= 0.2 V
25°C
T ꢁ=ꢁ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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8
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
l = 0 V
E
10
8
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
10
V
O
= 0.2 V
T = −25°C
A
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
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9
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
l = 0 V
E
10
8
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
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10
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
100
0.1
−25°C
25°C
75°C
0.01
10
1
25°C
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
100
10
1
75°C
25°C
TBD
T = −25°C
A
0.1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
O
= 0.2 V
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
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11
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
100
0.1
−25°C
75°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
l = 0 V
E
75°C
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
O
= 0.2 V
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
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12
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
75°C
100
0.1
−25°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
10
8
l = 0 V
E
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10
T = −25°C
A
25°C
1
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 46. Input Voltage versus Output Current
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13
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
8
7
6
5
4
3
2
1
100
10
1
75°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
25°C
0.1
T = −25°C
A
0.01
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 51. Input Voltage versus Output Current
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14
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
3.5
3
100
10
1
f = 1 MHz
75°C
l = 0 V
E
T = 25°C
A
2.5
2
25°C
1.5
1
0.1
T = −25°C
A
0.01
0.5
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
100
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 56. Input Voltage versus Output Current
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15
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1
1
1000
V
CE
= 10 V
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
10
8
l = 0 V
E
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 61. Input Voltage versus Output Current
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16
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
100
10
1.2
f = 1 MHz
= 0 V
T = 25°C
A
25°C
75°C
1.0
0.8
0.6
0.4
I
E
T = −25°C
A
1
0.2
0
= 5 V
V
O
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 64. Output Capacitance
Figure 65. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 66. Input Voltage versus Output Current
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17
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
1.2
1.0
0.8
0.6
0.4
I
E
T = −25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 69. Output Capacitance
Figure 70. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 71. Input Voltage versus Output Current
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18
MUN5111DW1T1 Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
INCHES
DIM MIN MAX
MILLIMETERS
6
1
5
4
3
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
K
N
S
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
S
−B−
2
0.65 BSC
−−−
0.10
0.10
0.10
0.25
0.30
D6 PL
M
M
0.2 (0.008)
B
0.20 REF
0.079 0.087
2.00
2.20
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
N
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
J
C
6. COLLECTOR 2
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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19
MUN5111DW1T1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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MUN5111DW1T1/D
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