MUN2233T1G [ONSEMI]
NPN SILICON BIAS RESISTOR TRANSISTOR; NPN硅偏置电阻晶体管
| 型号： | MUN2233T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 文件： | 总12页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN2211T1 Series
Preferred Devices
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−59 package which is designed for low power surface
mount applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
• Simplifies Circuit Design
• Reduces Board Space
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
BASE
(INPUT)
• Reduces Component Count
• Moisture Sensitivity Level: 1
R
R
1
2
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
PIN 1
EMITTER
(GROUND)
• The SC−59 package can be soldered using wave or reflow. The
modified gull−winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
MARKING DIAGRAM
3
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb−Free Packages are Available
2
1
8x
M
SC−59
CASE 318D
STYLE 1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
V
CBO
CEO
50
Vdc
8x = Specific Device Code*
M = Date Code
I
100
mAdc
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
A
Derate above 25°C
P
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
D
T = 25°C
°C/W
°C/W
°C/W
°C
Thermal Resistance −
Junction-to-Ambient
R
q
540 (Note 1)
370 (Note 2)
JA
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table
on page 2 of this data sheet.
Thermal Resistance −
Junction-to-Lead
R
q
264 (Note 1)
287 (Note 2)
JL
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 11
MUN2211T1/D
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
†
Device
MUN2211T1
Package
Marking
8A
R1 (K)
10
R2 (K)
10
Shipping
SC−59
3000/Tape & Reel
3000/Tape & Reel
MUN2211T1G
SC−59
(Pb−Free)
8A
10
10
MUN2212T1
SC−59
8B
8B
22
22
22
22
3000/Tape & Reel
3000/Tape & Reel
MUN2212T1G
SC−59
(Pb−Free)
MUN2213T1
SC−59
8C
8C
47
47
47
47
3000/Tape & Reel
3000/Tape & Reel
MUN2213T1G
SC−59
(Pb−Free)
MUN2214T1
SC−59
8D
8D
10
10
47
47
3000/Tape & Reel
3000/Tape & Reel
MUN2214T1G
SC−59
(Pb−Free)
MUN2215T1 (Note 3)
MUN2215T1G (Note 3)
SC−59
8E
8E
10
10
∞
∞
3000/Tape & Reel
3000/Tape & Reel
SC−59
(Pb−Free)
MUN2216T1 (Note 3)
MUN2216T1G (Note 3)
SC−59
8F
8F
4.7
4.7
∞
∞
3000/Tape & Reel
3000/Tape & Reel
SC−59
(Pb−Free)
MUN2230T1 (Note 3)
MUN2231T1 (Note 3)
MUN2232T1 (Note 3)
MUN2232T1G (Note 3)
SC−59
SC−59
SC−59
8G
8H
8J
1.0
2.2
4.7
4.7
1.0
2.2
4.7
4.7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
SC−59
(Pb−Free)
8J
MUN2233T1 (Note 3)
MUN2233T1G (Note 3)
SC−59
8K
8K
4.7
4.7
47
47
3000/Tape & Reel
3000/Tape & Reel
SC−59
(Pb−Free)
MUN2234T1 (Note 3)
MUN2236T1
SC−59
SC−59
SC−59
8L
8N
8P
8P
22
100
47
47
100
22
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MUN2237T1
MUN2237T1G
SC−59
(Pb−Free)
47
22
MUN2240T1 (Note 3)
MUN2241T1 (Note 3)
SC−59
SC−59
8T
8U
47
∞
∞
3000/Tape & Reel
3000/Tape & Reel
100
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
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2
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
EBO
EB
C
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 4)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
h
FE
35
60
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
CE
C
80
80
160
160
3.0
8.0
15
15
30
80
200
150
150
140
350
350
80
80
80
160
160
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA)
MUN2230T1/MUN2231T1
C
C
B
B
(I = 10 mA, I = 1 mA)
MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
MUN2240T1
MUN2236T1
MUN2237T1
MUN2241T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.0 V, R = 1.0 kW)
CC
B
L
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
MUN2230T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
MUN2215T1
MUN2216T1
MUN2233T1
MUN2240T1
CC
B
L
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
70
32.9
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
130
61.1
61.1
100
kW
47
100
Resistor Ratio
MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
R /R
1
0.8
1.0
1.2
2
MUN2214T1
0.17
0.21
0.25
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
−
−
−
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
0.8
0.055
0.38
1.7
1.0
0.1
0.47
2.1
1.2
0.185
0.56
2.6
MUN2234T1
MUN2237T1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
350
300
250
200
150
100
R
q
JA
= 370°C/W
50
0
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2211T1
1
1000
I /I = 10
C B
V
= 10 V
CE
T ꢀ=ꢀ−25°C
A
T ꢀ=ꢀ75°C
A
25°C
75°C
25°C
−25°C
0.1
100
0.01
0.001
10
0
20
40
60
80
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
T ꢀ=ꢀ−25°C
A
E
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
T ꢀ=ꢀ−25°C
A
V
= 0.2 V
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2212T1
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ−25°C
A
T ꢀ=ꢀ75°C
A
25°C
75°C
25°C
0.1
−25°C
100
0.01
10
0.001
1
10
100
0
20
40
60
80
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T ꢀ=ꢀ−25°C
A
E
T = 25°C
A
0.1
0.01
V
8
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2213T1
10
1
1000
T ꢀ=ꢀ−25°C
A
I /I = 10
C B
V
= 10 V
CE
T ꢀ=ꢀ75°C
A
25°C
75°C
25°C
−25°C
100
0.1
0.01
10
1
10
100
0
20
40
60
80
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2214T1
1
300
T ꢀ=ꢀ−25°C
A
I /I = 10
C B
T ꢀ=ꢀ75°C
A
V
= 10
CE
250
200
150
100
25°C
75°C
25°C
0.1
−25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
75°C
25°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
2.5
T ꢀ=ꢀ−25°C
A
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
T ꢀ=ꢀ−25°C
A
V = 0.2 V
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2236T1
1
1000
V
= 10 V
I /I = 10
CE
C
B
T = −25°C
A
75°C
25°C
25°C
75°C
T = −25°C
A
0.1
100
10
0.01
0
5
10
15
20
25
30
35
40
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
100
5
4.5
4
75°C
f = 1 MHz
= 0 V
T = −25°C
A
l
E
T = 25°C
A
3.5
3
10
1
25°C
2.5
2
1.5
1
V
= 5 V
35
O
0.5
0
0.1
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
40
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
25°C
75°C
V
= 0.2 V
O
T = −25°C
A
10
1
0.1
0
5
10
15
20
25
30
35
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2237T1
1
1000
V
= 10 V
I /I = 10
CE
C
B
75°C
25°C
T = −25°C
A
25°C
75°C
T = −25°C
A
100
0.1
10
1
0.01
0
5
10
15
20
25
30
35
40
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
2
1.8
1.6
1.4
1.2
1
100
10
1
75°C
T = −25°C
A
25°C
0.8
0.6
0.4
0.1
f = 1 MHz
= 0 V
T = 25°C
A
0.01
V
= 5 V
14
l
O
E
0.2
0
0.001
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
16
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
25°C
75°C
10
1
0
5
10
15
20
25
30
35
40
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 33. Open Collector Inverter:
Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
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MUN2211T1 Series
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
A
NOTES:
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ꢁꢂ2. CONTROLLING DIMENSION: MILLIMETER.
L
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
3
S
B
A
B
C
D
G
H
J
2.70
1.30
1.00
0.35
1.70
0.013
0.09
0.20
1.25
2.50
3.10 0.1063 0.1220
1.70 0.0512 0.0669
1.30 0.0394 0.0511
0.50 0.0138 0.0196
2.10 0.0670 0.0826
0.100 0.0005 0.0040
0.18 0.0034 0.0070
0.60 0.0079 0.0236
1.65 0.0493 0.0649
3.00 0.0985 0.1181
2
1
D
G
K
L
S
J
C
STYLE 1:
PIN 1. EMITTER
2. BASE
K
3. COLLECTOR
H
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MUN2211T1/D
相关型号：
MUN2234T3
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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