MUN2130T1G [ONSEMI]
Bias Resistor Transistors; 偏置电阻晶体管
| 型号： | MUN2130T1G |
| 厂家： | 
ONSEMI |
| 描述： | Bias Resistor Transistors |
| 文件： | 总13页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
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PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
BASE
(INPUT)
Features
PIN 1
EMITTER
(GROUND)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
3
• ESD Rating − Human Body Model: Class 1
2
− Machine Model: Class B
1
• The SC−59 Package Can be Soldered Using Wave or Reflow
• The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
• Pb−Free Packages are Available
SC−59
CASE 318D
PLASTIC
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Rating
Collector − Base Voltage
Collector − Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
V
CBO
CEO
50
Vdc
6x M G
G
I
100
mAdc
C
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
6x
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Total Device Dissipation
P
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
D
T = 25°C
A
Derate above 25°C
°C/W
°C/W
°C/W
°C
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Thermal Resistance,
Junction−to−Ambient
R
q
540 (Note 1)
370 (Note 2)
JA
Thermal Resistance,
Junction−to−Lead
R
q
264 (Note 1)
287 (Note 2)
JL
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Junction and Storage Temperature
Range
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
DEVICE MARKING INFORMATION
See device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
2. FR−4 @ 1.0 x 1.0 inch Pad.
©
Semiconductor Components Industries, LLC, 2006
Publication Order Number:
1
September, 2006 − Rev. 17
MUN2111T1/D
MUN2111T1 Series
DEVICE MARKING AND RESISTOR VALUES
†
Device
MUN2111T1
Package
Marking
6A
R1 (K)
R2 (K)
10
Shipping
SC−59
10
10
3000 / Tape & Reel
10,000 / Tape & Reel
MUN2111T1G
SC−59
(Pb−Free)
6A
10
MUN2111T3G
SC−59
(Pb−Free)
6A
10
10
MUN2112T1
SC−59
6B
6B
22
22
22
22
MUN2112T1G
SC−59
(Pb−Free)
MUN2113T1
SC−59
6C
6C
47
47
47
47
MUN2113T1G
SC−59
(Pb−Free)
MUN2114T1
SC−59
6D
6D
10
10
47
47
MUN2114T1G
SC−59
(Pb−Free)
MUN2115T1 (Note 3)
MUN2115T1G (Note 3)
SC−59
6E
6E
10
10
∞
∞
SC−59
(Pb−Free)
MUN2116T1 (Note 3)
MUN2116T1G (Note 3)
SC−59
6F
6F
4.7
4.7
∞
∞
SC−59
(Pb−Free)
MUN2130T1 (Note 3)
MUN2130T1G (Note 3)
SC−59
6G
6G
1.0
1.0
1.0
1.0
SC−59
(Pb−Free)
MUN2131T1 (Note 3)
MUN2131T1G (Note 3)
SC−59
6H
6H
2.2
2.2
2.2
2.2
3000 / Tape & Reel
SC−59
(Pb−Free)
MUN2132T1 (Note 3)
MUN2132T1G (Note 3)
SC−59
6J
6J
4.7
4.7
4.7
4.7
SC−59
(Pb−Free)
MUN2133T1 (Note 3)
MUN2133T1G (Note 3)
SC−59
6K
6K
4.7
4.7
47
47
SC−59
(Pb−Free)
MUN2134T1 (Note 3)
MUN2134T1G (Note 3)
SC−59
6L
6L
22
22
47
47
SC−59
(Pb−Free)
MUN2136T1
SC−59
6N
6N
100
100
100
100
MUN2136T1G
SC−59
(Pb−Free)
MUN2137T1
SC−59
6P
6P
47
47
22
22
MUN2137T1G
SC−59
(Pb−Free)
MUN2140T1 (Note 3)
MUN2140T1G (Note 3)
SC−59
6T
6T
47
47
∞
∞
SC−59
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
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2
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 4)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
250
250
5.0
15
27
140
130
150
140
250
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
120
Collector−Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
Vdc
CE(sat)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2133T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
C
B
(I = 10 mA, I = 5.0 mA)
C
B
(I = 10 mA, I = 1.0 mA)
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
Vdc
OL
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS (Note 4)
Output Voltage (off)
Symbol
Min
Typ
Max
Unit
V
Vdc
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2130T1
MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
CC
B
L
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
kW
Resistor Ratio
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
2.1
1.2
0.25
−
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
0.8
1.2
0.055
0.38
1.7
0.185
0.56
2.6
MUN2134T1
MUN2137T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
+12 V
350
300
250
200
150
Typical Application
for PNP BRTs
R = 370°C/W
q
JA
100
50
0
LOAD
−50
0
50
100
150
T , AMBIENT TEMPERATURE (5°C)
A
Figure 1. Derating Curve
Figure 2. Inexpensive, Unregulated Current Source
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4
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
1000
1
V
= 10 V
I /I = 10
CE
C
B
T = −2°5C
A
25°C
T = 75°C
A
75°C
0.1
100
−25°C
25°C
0.01
10
20
1
10
100
0
40
60
80
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. VCE(sat) vs. IC
Figure 4. DC Current Gain
100
10
1
4
25°C
75°C
f = 1 MHz
= 0 V
T = 25°C
A
l
E
T = −25°C
A
3
2
0.1
1
0
V
= 5 V
8
O
0.01
0.001
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage vs. Output Current
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5
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1
1000
10
1
V
= 10 V
I /I = 10
CE
C
B
T = −25°C
A
25°C
T = 75°C
A
75°C
100
25°C
−25°C
0.1
10
0.01
1
10
0
20
40
60
80
10
0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. VCE(sat) vs. IC
Figure 9. DC Current Gain
4
3
2
1
100
25°C
75°C
f = 1 MHz
= 0 V
T = 25°C
A
l
E
10
1
T = −25°C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
0
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 10. Output Capacitance
Figure 11. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
25°C
10
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Voltage vs. Output Current
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MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1
1
1000
I /I = 10
C
B
T = 75°C
A
T = −25°C
A
25°C
25°C
−25°C
75°C
100
0.1
0.01
1
10
0
10
20
30
40
1
10
100
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 14. DC Current Gain
Figure 13. VCE(sat) vs. IC
100
25°C
T = 75°C
A
f = 1 MHz
l
= 0 V
0.8
E
10
1
−25°C
T = 25°C
A
0.6
0.4
0.2
0
0.1
0.01
V
4
= 5 V
5
O
0.001
0
10
20
30
40
50
0
1
2
3
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 15. Output Capacitance
Figure 16. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 17. Input Voltage vs. Output Current
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7
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1
180
1
0.1
T = 75°C
A
I /I = 10
C
B
V
= 10 V
CE
160
140
120
100
80
T = −25°C
A
25°C
−25°C
25°C
75°C
0.01
60
40
20
0
0.00
1
0
20
40
60
80
1
2
4
6
8 10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 19. DC Current Gain
Figure 18. VCE(sat) vs. IC
4.5
4
100
10
1
T = 75°C
f = 1 MHz
= 0 V
T = 25°C
A
A
25°C
l
E
3.5
3
−25°C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Capacitance
Figure 21. Output Current vs. Input Voltage
10
T = −25°C
A
25°C
75°C
1
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 22. Input Voltage vs. Output Current
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MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1
1
1000
I /I = 10
I /I =10
C
B
C
B
100
25°C
75°C
0.1
25°C
75°C
10
1
−25°C
−25°C
0.01
0
5
10
15
20
25
30
35
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. VCE(sat) vs. IC
Figure 24. DC Current Gain
12
10
8
100
10
75°C
−25°C
f = 1 MHz
= 0 A
T = 25°C
A
I
E
1
6
4
T = 25°C
A
0.01
0.01
V = 5 V
O
2
0
0
5
10 15 20 25 30 35 40 45 50 55
REVERSE BIAS VOLTAGE (V)
0
1
2
3
4
5
6
7
8
V
V
in,
INPUT VOLTAGE (V)
R,
Figure 25. Output Capacitance
Figure 26. Output Current vs. Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
= 0.2 V
20
O
0.1
0
5
10
15
25
I
COLLECTOR CURRENT (mA)
C,
Figure 27. Input Voltage vs. Output Current
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MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. VCE(sat) versus IC
Figure 29. DC Current Gain
8
7
6
5
4
3
2
1
100
10
1
75°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
25°C
0.1
T = −25°C
A
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 32. Input Voltage versus Output Current
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MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
= 10 V
I /I = 10
CE
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 33. Maximum Collector Voltage vs.
Collector Current
Figure 34. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
= 0 V
E
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 35. Output Capacitance
Figure 36. Output Current vs. Input Voltage
100
T = −25°C
A
25°C
10
V
= 0.2 V
O
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 37. Input Voltage vs. Output Current
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11
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 38. Maximum Collector Voltage vs.
Collector Current
Figure 39. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
= 0 V
E
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
= 5 V
O
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 40. Output Capacitance
Figure 41. Output Current vs. Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 42. Input Voltage vs. Output Current
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12
MUN2111T1 Series
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
D
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ꢀꢁ2. CONTROLLING DIMENSION: MILLIMETER.
3
MILLIMETERS
INCHES
NOM
E
H
E
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
2
1
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
b
e
H
E
C
STYLE 1:
A
PIN 1. EMITTER
2. BASE
3. COLLECTOR
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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