MSB92WT1 [ONSEMI]
PNP Silicon General Purpose High Voltage Transistor; PNP硅通用高压晶体管
| 型号： | MSB92WT1 |
| 厂家： | 
ONSEMI |
| 描述： | PNP Silicon General Purpose High Voltage Transistor |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSB92WT1, MSB92AWT1
Preferred Device
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
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COLLECTOR
3
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
Unit
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
−300
Vdc
(BR)CBO
(BR)CEO
(BR)EBO
BASE
EMITTER
V
V
−300
−5.0
500
Vdc
Vdc
mAdc
V
3
SC−70 (SOT−323)
CASE 419
Collector Current − Continuous
Electrostatic Discharge
I
C
1
STYLE 3
2
ESD
MBMu16,000,
MMu2,000
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Rating
Symbol
Max
150
150
Unit
mW
°C
Power Dissipation (Note 1)
Junction Temperature
P
D
xx M G
G
T
J
Storage Temperature Range
T
stg
−55 to +150
°C
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
xx = Device Code
x= 2D or D2
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MSB92WT1
SC−70/
3000/Tape & Reel
SOT−323
MSB92WT1G
SC−70/
SOT−323
(Pb−Free)
3000/Tape & Reel
MSB92AWT1
SC−70/
SOT−323
3000/Tape & Reel
3000/Tape & Reel
MSB92AWT1G
SC−70/
SOT−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 6
MSB92WT1/D
MSB92WT1, MSB92AWT1
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V
−300
−
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
C
B
Collector-Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
−300
−5.0
−
−
−
Vdc
Vdc
mA
mA
−
C
E
Emitter-Base Breakdown Voltage
(I = −100 mAdc, I = 0)
E
E
Collector-Base Cutoff Current
(V = −200 Vdc, I = 0)
I
−0.25
−0.1
CBO
CB
E
Emitter−Base Cutoff Current
(V = −3.0 Vdc, I = 0)
I
−
EBO
EB
B
DC Current Gain (Note 2)
MSB92WT1: (V = −10 Vdc, I = −1.0 mAdc)
h
FE1
h
FE1
h
FE2
h
FE3
25
120
40
−
200
−
CE
C
MSB92AWT1: (V = −10 Vdc, I = −1.0 mAdc)
CE
C
(V = −10 Vdc, I = −10 mAdc)
CE
C
(V = −10 Vdc, I = −30 mAdc)
25
−
CE
C
Collector-Emitter Saturation Voltage (Note 2)
(I = −20 mAdc, I = −2.0 mAdc)
V
−
−
−0.5
−0.9
Vdc
Vdc
CE(sat)
C
B
Base−Emitter Saturation Voltage
(I = −20 mAdc, I = −2.0 mAdc)
V
BE(sat)
C
B
SMALL SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
50
−
−
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 20 MHz)
C
CE
Collector−Base Capacitance
(V = −20 Vdc, I = 0, f = 1.0 MHz)
C
6.0
cb
CB
E
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
MSB92WT1, MSB92AWT1
120
100
V
= 10 Vdc
CE
T = +125°C
J
80
60
40
25°C
−55°C
20
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
10
C
@ 1MHz
eb
1.0
0.1
C
@ 1MHz
cb
0.1
1.0
10
100
1000
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
CE(sat)
C B
@ 125°C, I /I = 10
CE(sat)
CE(sat)
BE(sat)
C B
V
V
@ −55°C, I /I = 10
C B
@ 25°C, I /I = 10
C B
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
V
BE(on)
@ 125°C, I /I = 10
C B
@ −55°C, I /I = 10
C B
@ 25°C, V = 10 V
CE
@ 125°C, V = 10 V
CE
@ −55°C, V = 10 V
CE
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 3. “ON” Voltages
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3
MSB92WT1, MSB92AWT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
MILLIMETERS
INCHES
3
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.7 REF
0.35
0.18
2.10
1.24
1.30
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
MAX
0.040
0.004
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.65 BSC
0.425 REF
0.026 BSC
0.017 REF
e1
L
H
2.00
2.10
2.40
0.079
0.083
0.095
E
c
STYLE 3:
A2
A
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
local Sales Representative.
MSB92WT1/D
相关型号：
MSB92WT1G
500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
ROCHESTER
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