MPSA05RA [ONSEMI]
NPN Bipolar Small Signal Transistor;
| 型号： | MPSA05RA |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Small Signal Transistor 放大器 晶体管 |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
NPN General-Purpose
Amplifier
MPSA05
1.
2.
3.
Emitter
Base
Collector
1
2
Features
3
• This Device is Designed for General−Purpose Amplifier Applications
at Collector Currents to 300 mA
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−92−3
CASE 135AR
Bent Lead
Tape & Reel
MAXIMUM RATINGS
MARKING DIAGRAM
Symbol
Parameter
Collector−Emitter Voltage
Collector−Base Voltage
Value
60
Unit
V
V
CEO
V
CBO
V
EBO
AMP
SA05
YWW
60
V
Emitter−Base Voltage
4.0
500
V
I
C
Collector Current − Continuous
Junction and Storage Temperature
mA
_C
−55 to +150
T , T
J
STG
A
= Assembly Location
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MPSA05 = Specific Device Code
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Values are at T = 25°C unless otherwise noted.
A
†
Symbol
Parameter
Max.
625
5.0
Unit
mW
Device
Package
Shipping
P
D
Total Device Dissipation
MPSA05RA
TO−92 3L
2000 /
Tape & Reel
mW/_C
_C/W
Derate Above 25_C
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
R
Thermal Resistance,
83.3
200
θ
θ
JC
Junction−to−Case
R
Thermal Resistance,
Junction−to−Ambient
_C/W
JA
ELECTRICAL CHARACTERISTICS
Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Conditions
I = 1 mA, I = 0
C
Min.
60
4
Max.
−
Unit
V
V
Collector−Emitter Breakdown Voltage (Note 1)
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
(BR)CEO
(BR)EBO
B
V
I = 100 μA, I = 0
−
V
E
C
I
I
V
CE
= 60 V, I = 0
−
0.1
0.1
−
μA
μA
CEO
B
Collector Cut−Off Current
V
CB
= 60 V, I = 0
−
CBO
E
h
FE
DC Current Gain
I
C
I
C
I
C
I
C
I
C
= 10 mA, V = 1.0 V
100
100
−
CE
= 100 mA, V = 1.0 V
−
CE
V
CE
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
= 100 mA, I = 10 mA
0.25
1.2
−
V
V
B
V
BE
(on)
= 100 mA, V = 1.0 V
−
CE
f
T
Current Gain − Bandwidth Product
= 10 mA, V = 2 V, f = 100 MHz
100
MHz
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
April, 2022 − Rev. 2
MPSA05−FSC/D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
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DIODES
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