MPS2907ARLRM [ONSEMI]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | MPS2907ARLRM |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS2907A
Preferred Device
General Purpose
Transistors
PNP Silicon
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
–60
Unit
Vdc
2
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
BASE
–60
Vdc
1
–5.0
–600
Vdc
EMITTER
Collector Current – Continuous
I
C
mAdc
STYLE 1
Total Device Dissipation
P
D
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Device Dissipation
P
TO–92
CASE 29
STYLES 1, 14
@ T = 25°C
1.5
12
Watts
mW/°C
C
Derate above 25°C
1
2
Operating and Storage Junction
Temperature Range
T , T
J
–55 to
+150
°C
stg
3
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MPS2
907A
YWW
Thermal Resistance,
Junction to Ambient
R
200
°C/W
θJA
Thermal Resistance,
Junction to Case
R
83.3
°C/W
θJC
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
MPS2907A
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Ammo Pack
MPS2907ARLRA
MPS2907ARLRE
MPS2907ARLRM
MPS2907ARLRP
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2001 – Rev. 0
MPS2907A/D
MPS2907A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (Note 1.)
V
V
Vdc
Vdc
(BR)CEO
(I = –10 mAdc, I = 0)
–60
–60
–
–
C
B
Collector–Base Breakdown Voltage
(I = –10 mAdc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = –10 mAdc, I = 0)
V
–5.0
–
–
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = –30 Vdc, V
I
–50
nAdc
µAdc
CEX
CBO
= –0.5 Vdc)
EB(off)
CE
Collector Cutoff Current
I
(V
CB
(V
CB
= –50 Vdc, I = 0)
–
–
–0.01
–10
E
= –50 Vdc, I = 0, T = 150°C)
E
A
Base Current
(V = –30 Vdc, V
I
–
–50
nAdc
–
B
= –0.5 Vdc)
EB(off)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = –0.1 mAdc, V
= –10 Vdc)
= –10 Vdc)
= –10 Vdc)
75
100
100
100
50
–
–
–
300
–
C
C
CE
CE
CE
(I = –1.0 mAdc, V
(I = –10 mAdc, V
C
(I = –150 mAdc, V
= –10 Vdc) (Note 1.)
= –10 Vdc) (Note 1.)
C
CE
CE
(I = –500 mAdc, V
C
Collector–Emitter Saturation Voltage (Note 1.)
(I = –150 mAdc, I = –15 mAdc)
V
Vdc
Vdc
CE(sat)
–
–
–0.4
–1.6
C
B
(I = –500 mAdc, I = –50 mAdc)
C
B
Base–Emitter Saturation Voltage (Note 1.)
(I = –150 mAdc, I = –15 mAdc)
V
BE(sat)
–
–
–1.3
–2.6
C
C
B
B
(I = –500 mAdc, I = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
f
200
–
–
MHz
pF
T
(I = –50 mAdc, V
C
= –20 Vdc, f = 100 MHz)
CE
Output Capacitance
C
8.0
30
obo
(V
CB
= –10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = –2.0 Vdc, I = 0, f = 1.0 MHz)
C
–
pF
ibo
EB
C
SWITCHING CHARACTERISTICS
Turn–On Time
(V
CC
B1
= –30 Vdc, I = –150 mAdc,
= –15 mAdc) (Figures 1 and 5)
t
–
–
–
–
–
–
45
10
ns
ns
ns
ns
ns
ns
C
on
I
Delay Time
t
d
Rise Time
t
r
40
Turn–Off Time
(V
CC
= –6.0 Vdc, I = –150 mAdc,
t
100
80
C
off
I = I = 15 mAdc) (Figure 2)
B1 B2
Storage Time
t
s
Fall Time
t
f
30
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
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2
MPS2907A
INPUT
= 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z = 50 Ω
o
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Z
o
+15 V -6.0 V
-30 V
200
1.0 k
37
1.0 k
1.0 k
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
TO OSCILLOSCOPE
0
0
RISE TIME ≤ 5.0 ns
50
-16 V
-30 V
50
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
TYPICAL CHARACTERISTICS
3.0
2.0
V
CE
V
CE
= -1.0 V
= -10 V
T
= 125°C
J
25°C
1.0
0.7
0.5
-ā55°C
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300 -500
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
-1.0
-0.8
-0.6
-0.4
-0.2
0
I
C
= -1.0 mA
-10 mA
-100 mA
-500 mA
-0.005 -0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2 -0.3 -0.5 -0.7 -1.0
-3.0
-30
-20
-2.0
-5.0 -7.0 -10
-50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
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3
MPS2907A
TYPICAL CHARACTERISTICS
300
200
500
300
V
= -30 V
V
= -30 V
CC
I /I = 10
CC
I /I = 10
C B
200
C B
= I
t
r
100
70
I
T
= 25°C
t
f
B1 B2
= 25°C
J
T
J
100
70
50
30
20
50
t′ = t - 1/8 t
f
s
s
30
20
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300 -500
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300 -500
I , COLLECTOR CURRENT
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
= 10 Vdc, T = 25°C
CE
A
10
8.0
6.0
4.0
2.0
0
10
f = 1.0 kHz
8.0
I
= -1.0 mA, R = 430 Ω
s
C
6.0
4.0
I
= -50 µA
C
-500 µA, R = 560 Ω
-50 µA, R = 2.7 kΩ
-100 µA, R = 1.6 kΩ
s
-100 µA
-500 µA
-1.0 mA
s
s
R = OPTIMUM SOURCE RESISTANCE
s
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
s
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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4
MPS2907A
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
= 10 Vdc, T = 25°C
CE
A
30
20
400
300
C
eb
200
10
100
80
7.0
5.0
V
T
= -20 V
CE
= 25°C
60
J
C
cb
40
30
3.0
2.0
20
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
0
-1.0
-0.8
T
= 25°C
J
V
@ I /I = 10
C B
BE(sat)
R
qVC
for V
CE(sat)
-0.5
CE
@ V = -10 V
V
BE(on)
-0.6
-0.4
-0.2
0
-1.0
-1.5
-2.0
-2.5
R
qVB
for V
BE
V
@ I /I = 10
C B
CE(sat)
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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5
MPS2907A
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 1:
PIN 1. EMITTER
2. BASE
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3. COLLECTOR
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6
MPS2907A
Notes
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7
MPS2907A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MPS2907A/D
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