MPQ3725 [ONSEMI]
40V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116;
| 型号： | MPQ3725 |
| 厂家： | 
ONSEMI |
| 描述： | 40V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MPQ3725/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
Motorola Preferred Device
14 13 12
11 10
9
6
8
7
NPN
1
2
3
4
5
MAXIMUM RATINGS
14
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Adc
1
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
40
60
CASE 646–06, STYLE 1
TO–116
V
CES
EBO
V
5.0
1.0
Collector Current — Continuous
I
C
Four
Transistors
One
Transistor
Equal Power
Total Device Dissipation
P
D
@ T = 25°C
1.0
8.0
2.5
20
Watts
mW/°C
A
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
J stg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Effective
Unit
One
For Four
Transistor Transistors
Thermal Resistance,
Junction to Ambient
R
125 50
°C/W
JA
(1)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(2)
Collector–Emitter Breakdown Voltage
V
40
60
5.0
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Adc
(BR)CEO
(I = 10 mAdc, I = 0)
C
B
Collector–Emitter Breakdown Voltage
(I = 100 Adc, V = 0)
V
(BR)CES
(BR)EBO
C
BE
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
—
E
C
Collector Cutoff Current
(V = 40 Vdc, I = 0)
I
0.5
CBO
CB
E
1. R
is measured with the device soldered into a typical printed circuit board.
JA
2. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
(2)
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 100 mAdc, V
= 1.0 Vdc)
= 2.0 Vdc)
35
25
75
45
200
—
C
CE
CE
(I = 500 mAdc, V
C
Collector–Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
V
—
0.32
0.45
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
0.8
0.9
1.1
BE(sat)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
250
275
—
MHz
(I = 50 mAdc, V
= 10 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= 10 Vdc, I = 0, f = 1.0 MHz)
C
obo
—
—
5.1
62
10
80
pF
pF
CB
E
Input Capacitance (V
= 0.5 Vdc, I = 0, f = 1.0 MHz)
C
EB
C
ibo
SWITCHING CHARACTERISTICS
Turn–On Time
t
—
—
20
50
35
60
ns
ns
on
(I = 500 mAdc, I = 50 mAdc
C
B1
V
= –3.8 Vdc)
BE(off)
Turn–Off Time
(I = 500 mAdc, I = I = 50 mAdc)
t
off
C
B1 B2
2. Pulse Test: Pulse Width 300 s; Duty Cycle
2.0%.
–3.8 V
+30 V
15
1.0
F
TO
SAMPLING
1.0 k
43
OSCILLOSCOPE
+9.7 V
Z
≥
<
100 k
1.0 ns
in
r
1.0
62
F
t
100
0
PULSE GENERATOR
t , t
≤
≈
1.0 ns
1.0
r
f
PW
s
Z
= 50
in
DUTY CYCLE
≤
2.0%
Figure 1. Switching Times Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.0
10
s
0.5
dc
0.3
0.2
T
= 200
°C
J
0.1
SECOND BREAKDOWN LIMITED
THERMAL LIMITATION @ T = 25
°C
0.05
C
PULSE DUTY CYCLE
≤ 10%
0.03
0.02
APPLICABLE TO RATED BV
CEO
3.0 4.0
6.0
8.0 10
20
30
40
60
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 2. Active–Region Safe Operating Area
TYPICAL DC CHARACTERISTICS
400
200
1.4
T
= 25°C
J
V
= 1.0 V
CE
1.2
1.0
0.8
0.6
0.4
T
= 125
°
C
J
25°
C
100
80
–55°
C
V
V
@ I /I = 10
C B
BE(sat)
60
40
0.2
0
@ I /I = 10
C B
CE(sat)
20
10
20
50
100
200
500
1000
10
20
50
100
200
500
1000
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
1.0
0.8
0.6
0.4
0.2
0
+2.5
+2.0
T
= 25°C
J
*APPLIES FOR I /I
C B
<
h
/2
FE
+1.5
+1.0
+0.5
0
*
FOR V
VC
CE(sat)
1000 mA
800 mA
–0.5
–1.0
–1.5
500 mA
FOR V
VB
BE
I
= 100 mA
2.0
300 mA
50
C
–2.0
–2.5
0.5
1.0
5.0
10
20
100
200
500
10
20 30
50
I , COLLECTOR CURRENT (mA)
C
100
200 300
500
1000
I
, BASE CURRENT (mA)
B
Figure 5. Collector Saturation Region
Figure 6. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL DYNAMIC CHARACTERISTICS
500
100
70
T
= 25°C
J
V
= 10 Vdc
CE
f = 100 MHz
= 25
C
ib
50
300
200
T
°C
J
30
20
C
ob
10
7.0
5.0
100
70
50
3.0
4.0 6.0
10
20
40
60
100
200
400
1000
80
0.1
0.2
0.5
1.0
V , REVERSE VOLTAGE (VOLTS)
R
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
C
Figure 7. Current–Gain — Bandwidth Product
Figure 8. Capacitance
200
100
200
I
T
/I = 10
V
= 10 Vdc
C
J
B
CC
= 25°C
= 25
°C
T
J
t @ I /I = 10
C B
f
100
70
t @ I /I = 20
C B
f
50
t @ V
= 10 Vdc
r
CC
= 30 Vdc
CC
t
@ I /I = 20
C B
s
30
20
t @ V
r
50
t
@ I /I = 10
C B
s
30
20
10
t
@ V
= 0 V
BE(off)
5.0
d
V
= –3.8 Vdc
= 30 Vdc
BE(off)
CC
3.0
2.0
V
10
10
20
30
50
100
200 300
500
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
100
200 300
500
1000
I
, COLLECTOR CURRENT (mA)
C
Figure 9. Turn–On Time
Figure 10. Turn–Off Time
1000
100
V
V
V
= 60
= 30
= 10
CE
CE
CE
10
1.0
0.1
0.01
0
20
40
60
100 120 140 160
C)
180 200
T , JUNCTION TEMPERATURE (
°
J
Figure 11. Collector Cutoff Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
14
1
8
7
B
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
A
F
INCHES
MILLIMETERS
STYLE 1:
PIN 1. COLLECTOR
DIM
A
B
C
D
F
MIN
MAX
0.770
0.260
0.185
0.021
0.070
MIN
18.16
6.10
3.69
0.38
1.02
MAX
19.56
6.60
4.69
0.53
1.78
L
0.715
0.240
0.145
0.015
0.040
2. BASE
3. EMITTER
4. NO CONNECTION
5. EMITTER
6. BASE
C
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO CONNECTION
12. EMITTER
13. BASE
G
H
J
K
L
0.100 BSC
2.54 BSC
J
0.052
0.008
0.115
0.095
0.015
0.135
1.32
0.20
2.92
2.41
0.38
3.43
N
SEATING
PLANE
K
0.300 BSC
7.62 BSC
H
G
D
M
M
N
0
10
0
10
0.015
0.039
0.39
1.01
14. COLLECTOR
CASE 646–06
TO–116
ISSUE M
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MPQ3725/D
◊
相关型号：
MPQ3762
Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Plastic/Epoxy, 14 Pin
MOTOROLA
MPQ3762LEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
CENTRAL
MPQ3799
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116
MOTOROLA
©2020 ICPDF网 联系我们和版权申明